CN116967613A - Device and method for removing metal film on surface of waste mask - Google Patents
Device and method for removing metal film on surface of waste mask Download PDFInfo
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- CN116967613A CN116967613A CN202311227434.0A CN202311227434A CN116967613A CN 116967613 A CN116967613 A CN 116967613A CN 202311227434 A CN202311227434 A CN 202311227434A CN 116967613 A CN116967613 A CN 116967613A
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- metal film
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- light
- mask
- transmitting substrate
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- 229910052751 metal Inorganic materials 0.000 title claims abstract description 437
- 239000002184 metal Substances 0.000 title claims abstract description 437
- 239000002699 waste material Substances 0.000 title claims abstract description 82
- 238000000034 method Methods 0.000 title claims abstract description 59
- 239000000758 substrate Substances 0.000 claims abstract description 187
- 239000010408 film Substances 0.000 claims description 376
- 239000010409 thin film Substances 0.000 claims description 50
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 20
- 238000004140 cleaning Methods 0.000 claims description 20
- 238000012545 processing Methods 0.000 claims description 17
- 238000002834 transmittance Methods 0.000 claims description 13
- 238000012546 transfer Methods 0.000 claims description 11
- 230000003287 optical effect Effects 0.000 claims description 9
- 238000010191 image analysis Methods 0.000 claims description 8
- 230000001678 irradiating effect Effects 0.000 claims description 8
- 238000002310 reflectometry Methods 0.000 claims description 6
- 239000007769 metal material Substances 0.000 claims description 3
- 229910052723 transition metal Inorganic materials 0.000 claims description 3
- 150000003624 transition metals Chemical class 0.000 claims description 3
- 230000007613 environmental effect Effects 0.000 abstract description 4
- 230000008569 process Effects 0.000 description 25
- 238000011069 regeneration method Methods 0.000 description 21
- 230000008929 regeneration Effects 0.000 description 20
- 239000007788 liquid Substances 0.000 description 12
- 239000000463 material Substances 0.000 description 12
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 10
- 230000000694 effects Effects 0.000 description 9
- 239000010453 quartz Substances 0.000 description 9
- 239000004065 semiconductor Substances 0.000 description 9
- 238000004519 manufacturing process Methods 0.000 description 8
- 238000005259 measurement Methods 0.000 description 8
- 239000011651 chromium Substances 0.000 description 7
- 239000012634 fragment Substances 0.000 description 7
- 239000011259 mixed solution Substances 0.000 description 7
- 239000000243 solution Substances 0.000 description 7
- 239000000126 substance Substances 0.000 description 7
- 230000005540 biological transmission Effects 0.000 description 6
- 238000000227 grinding Methods 0.000 description 5
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 4
- VLTRZXGMWDSKGL-UHFFFAOYSA-N perchloric acid Chemical compound OCl(=O)(=O)=O VLTRZXGMWDSKGL-UHFFFAOYSA-N 0.000 description 4
- 238000005498 polishing Methods 0.000 description 4
- 238000004064 recycling Methods 0.000 description 4
- 125000006850 spacer group Chemical group 0.000 description 4
- 229910001220 stainless steel Inorganic materials 0.000 description 4
- 239000010935 stainless steel Substances 0.000 description 4
- 230000009286 beneficial effect Effects 0.000 description 3
- 230000001066 destructive effect Effects 0.000 description 3
- 238000011161 development Methods 0.000 description 3
- 230000018109 developmental process Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 238000002474 experimental method Methods 0.000 description 3
- 230000010354 integration Effects 0.000 description 3
- 230000001681 protective effect Effects 0.000 description 3
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 2
- 229910016006 MoSi Inorganic materials 0.000 description 2
- 230000004075 alteration Effects 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000009434 installation Methods 0.000 description 2
- 238000011068 loading method Methods 0.000 description 2
- VSHBTVRLYANFBK-UHFFFAOYSA-N ozone sulfuric acid Chemical compound [O-][O+]=O.OS(O)(=O)=O VSHBTVRLYANFBK-UHFFFAOYSA-N 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N sulfuric acid Substances OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- PRORZGWHZXZQMV-UHFFFAOYSA-N azane;nitric acid Chemical compound N.O[N+]([O-])=O PRORZGWHZXZQMV-UHFFFAOYSA-N 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 229910002092 carbon dioxide Inorganic materials 0.000 description 1
- 239000001569 carbon dioxide Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- YNKVVRHAQCDJQM-UHFFFAOYSA-P diazanium dinitrate Chemical compound [NH4+].[NH4+].[O-][N+]([O-])=O.[O-][N+]([O-])=O YNKVVRHAQCDJQM-UHFFFAOYSA-P 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 238000003912 environmental pollution Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000002440 industrial waste Substances 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 238000010297 mechanical methods and process Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- GALOTNBSUVEISR-UHFFFAOYSA-N molybdenum;silicon Chemical compound [Mo]#[Si] GALOTNBSUVEISR-UHFFFAOYSA-N 0.000 description 1
- 239000013307 optical fiber Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 231100000614 poison Toxicity 0.000 description 1
- 238000007517 polishing process Methods 0.000 description 1
- 238000013139 quantization Methods 0.000 description 1
- 238000011084 recovery Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000001172 regenerating effect Effects 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 238000000859 sublimation Methods 0.000 description 1
- 230000008022 sublimation Effects 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- 239000003440 toxic substance Substances 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/36—Removing material
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/70—Auxiliary operations or equipment
- B23K26/702—Auxiliary equipment
Abstract
The invention provides a device and a method for removing a metal film on the surface of a waste mask, wherein the device comprises the following components: the mask comprises a light-transmitting substrate and a metal film arranged on the light-transmitting substrate, the metal film on the light-transmitting substrate is arranged towards the reflecting plate, a focus of laser emitted by the laser generator is arranged between the light-transmitting substrate and the metal film to transmit energy to the metal film, at least part of the laser passes through the light-transmitting substrate to irradiate the reflecting plate, the reflecting plate reflects the laser to the metal film to retransmit energy to the metal film, and the laser transmitting energy to the metal film through the light-transmitting substrate and the laser retransmitting energy to the metal film through the reflecting plate transmit high laser energy from two sides of the metal film respectively to remove the metal film from the light-transmitting substrate. The invention has the advantages of high metal film removal efficiency, high yield of regenerated products of the transparent substrate, environmental protection and no pollution.
Description
Technical Field
The invention relates to the technical field of integrated circuit manufacturing, in particular to a device and a method for removing a metal film on the surface of a waste mask.
Background
The semiconductor element is manufactured through a series of processes of wafer, oxidation, exposure to package and the like in 8 process sections. Of these 8 processes, the most important is the exposure process, which accounts for 60% of the total semiconductor production time; cost is also about 35% and is therefore of absolute importance in semiconductor manufacturing.
The exposure process is a process of reducing the line width of a projection circuit on a wafer by using an exposure apparatus using a photomask (also called a photomask, a mask, or a reticle) manufactured from an electronic circuit pattern of each layer as a master.
A photomask for exposure technology is used to control the light characteristics of quartz substrate, to sputter Cr film on the substrate or sputter Cr film on MoSi film, then to plate a photosensitive layer, then to expose directly by electron beam or laser, and to form fine circuit on the metal film by development and etching technology.
The higher the integration of semiconductor devices, the smaller the circuit linewidth, and thus the more and more complicated the device manufacturing process. Accordingly, the number of exposure processes is also increasing. Therefore, the number of masks required to fabricate devices is also continuously increasing.
With the rapid development of the ICT industry, the performance improvement cycle of products and the time to market of new products are accelerating. In order to meet the needs of customers, semiconductor device manufacturers and display device manufacturers are increasingly able to manufacture new masks required for the production of new products by customers. With the increase in product replacement cycles and production downtime, many unusable masks are available. Meanwhile, in order to increase the integration of the elements, the wavelength of the light source in the exposure process becomes shorter, and in order to increase the yield, the output power of the light source is also increasing. Therefore, the damage and pollution of the light source can accelerate the replacement period of the photomask.
In general, a mask having a lifetime full or a semiconductor circuit pattern etched with a shutdown product is discarded by a device manufacturer from the viewpoint of confidentiality of an enterprise. However, the metal film formed by the discarded circuit itself is industrial waste causing environmental pollution. Therefore, in recent years, in order to respond to environmental carbon emission reduction policies, energy saving and resource recycling have been advanced, and a scheme for recovering masks has been actively explored. The waste mask regeneration has a chemical treatment method and a physical treatment method. The chemical treatment of chromium film is to impregnate the photomask with ozone sulfuric acid or mixed solution of hydrogen peroxide and concentrated sulfuric acid or mixed solution of perchloric acid and diammonium nitrate to remove metal film. The physical treatment is mainly wet, that is, a method of spraying a processing liquid to perform contact grinding and polishing.
The waste mask is subjected to a recycling process, and it is necessary to completely remove the circuit-forming metal film formed on the mask and process it into a flat surface having extremely high flatness and low roughness so as to be reusable (hereinafter referred to as "recycling"). As a necessary condition for the regeneration, it is required to completely remove the circuit forming metal film, and the surface roughness of the quartz glass substrate after the circuit forming metal film removal is extremely small, and the processing thickness required for the circuit forming metal film removal and the cutoff is extremely small, thereby satisfying the allowable tolerance of the quartz substrate for mask and the like.
In the existing chemical regeneration method, the concentration of the dissolved solution or mixed solution for removing the metal film formed by the circuit is reduced after the use for a certain time, and the dissolved solution or mixed solution needs to be discarded, so that waste liquid is generated; in addition, the cleaning operation is required to be carried out, and additional cleaning liquid is generated; additional treatment is required to drain the waste liquid; in order to use and store the mixed solution and to treat the waste solution, various problems such as approval and approval are required. If the circuit-forming metal film is to be completely removed by chemical means, it is necessary to carry out the treatment for a long time, and thus it is difficult to prevent pollution.
In recent years, in order to improve the integration of semiconductor elements, a molybdenum-silicon film is often used in a mask. In order to remove the film, a conventional ozone sulfuric acid or a mixed solution of hydrogen peroxide and concentrated sulfuric acid, or a mixed solution of perchloric acid and ceric nitrate ammonia cannot be removed, and thus a hydrofluoric acid solution is used. However, hydrofluoric acid is very dangerous to the human body, and if it is exposed to 3ppm of hydrofluoric acid for more than 15 minutes at a time, or if it is exposed to more than 0.5ppm, the skin will corrode by workers working for 8 hours a day. Even if only gas is inhaled, emergency situations can occur, and the emergency situations are extremely dangerous highly toxic substances. In addition, since hydrofluoric acid has corrosiveness to quartz glass, if the metal film is removed with hydrofluoric acid, etching occurs simultaneously also at the quartz glass face portion where there is no metal film and at the quartz glass back face, so that the thickness of quartz glass becomes thin, so that the possibility that the quartz glass substrate cannot be used as a mask is high.
When the used mask quartz glass substrate or the quartz glass substrate with the once metal film pattern formed in the mask process is subjected to the process of dissolving and removing the cleaning metal film pattern by using the etching solution, and the metal film is formed again, if the substrate is subjected to the photoetching processing to form the pattern, original pattern traces exist, and defects are easy to occur.
For these problems, in order to reuse the mask by a chemical method, it is necessary to dissolve the patterned metal thin film in an auxiliary liquid so as to be in a pure quartz plate state, and then physically polish the surface of the quartz substrate using an abrasive. In addition, a cleaning work for removing the abrasive used in the polishing process is required, so that the abrasive can be reused as a quartz substrate for a photomask.
Compared with the chemical method, the mechanical method can realize the peeling of the circuit forming metal film in a short time. However, the wet type requires a processing liquid. Since the above-mentioned processing liquid has a circuit-forming metal film (e.g., chromium component) mixed therein, the treatment of the waste liquid is problematic as in the above-mentioned chemical method. Meanwhile, if the grinding is performed in the presence of the metal film, the residual film may scratch the quartz plate surface, and thus the residual metal film may need to be perfectly removed through a grinding process before the grinding. Grinding is also required, and thus additional processes and waste solutions are generated. In the polishing step, if the thickness of the quartz plate is reduced by the step of polishing the quartz plate surface, the thickness may be 6.3mm or less required for the mask process, and only a limited number of quartz plates may be subjected to the polishing step.
In view of the above problems of the conventional art, the present applicant has filed an application patent publication No. CN113458609a, which provides a method for processing a photomask blank by directly irradiating a photomask material layer on a photomask blank with laser light to cause sublimation reaction of the photomask material layer, thereby removing the photomask material layer from the photomask blank, and a method for manufacturing the photomask blank. However, the present inventors found that the solution disclosed in the above patent has at least the following technical problems during the development process: the method employs laser irradiation from the front side of a light-transmissive substrate to remove a mask material layer located on the front side of the light-transmissive substrate. In the process of irradiating the mask material layer by laser, although part of the mask material layer can be directly sublimated and removed, some broken fragments of the metal film material layer remain on the transparent substrate, and the fragments cover the non-removed photomask material layer in the adjacent area. In addition, since the metal film material layer is removed by irradiation from the front surface of the light-transmitting substrate by laser, the laser energy needs to be transferred to the interface between the light-transmitting substrate and the metal film material layer to have a good removal effect. However, since it is difficult to transmit energy to the interface because part of the laser light is reflected by the metal film, a higher energy laser light is required to transmit energy to the interface. Therefore, the process of directly removing the metal film material layer from the front surface of the light-transmitting substrate using the laser requires the use of high-energy laser, and thus the light-transmitting substrate is easily damaged, and there is a problem in that the yield of the regenerated light-transmitting substrate is lowered due to the removal of the residual thin film.
Disclosure of Invention
The invention aims to provide a device and a method for removing a metal film on the surface of a waste mask, which can remove the metal film completely (circuit forming metal film) and can remove the metal film in a large amount in a short time without generating waste liquid under the condition that the photomask regeneration conditions such as minimum thickness required for removing the metal film and the surface final treatment are satisfied. According to the device and the method for removing the metal film on the surface of the waste mask, the metal film is removed through laser irradiation, no waste liquid is generated, the metal film on the surface of the waste mask can be removed through laser irradiation at a high speed, the metal film on the surface of the waste mask can be removed efficiently and in an environment-friendly manner, the waste mask can be subjected to efficient and nondestructive regeneration treatment, and the regeneration efficiency and the product yield of the light-transmitting substrate of the waste mask are improved.
In order to achieve the above object, the present invention provides an apparatus for removing a metal film on a surface of a waste mask, comprising: the mask comprises a light-transmitting substrate and a metal film arranged on the light-transmitting substrate, the metal film on the light-transmitting substrate is arranged towards the reflecting plate, the laser generator is configured to emit laser, the focus of the laser is arranged between the light-transmitting substrate and the metal film to transmit energy to the metal film, at least part of the laser passes through the light-transmitting substrate to irradiate on the reflecting plate, the reflecting plate reflects the laser to the metal film to retransmit energy to the metal film, the laser transmitting energy to the metal film through the light-transmitting substrate and the laser retransmitting energy to the metal film through the reflecting plate transmit high laser energy from two sides of the metal film respectively, so that the metal film is removed from the light-transmitting substrate.
The device for removing the metal film on the surface of the waste mask comprises the mask and the reflecting plate which are sequentially arranged from top to bottom, and the laser generator which can focus between the transparent substrate and the metal film of the mask, wherein one side surface of the transparent substrate, on which the metal film is arranged, is the front surface of the transparent substrate, the other opposite side surface is the back surface of the transparent substrate, the metal film on the transparent substrate is arranged towards the reflecting plate, namely the front surface of the transparent substrate is arranged towards the reflecting plate, incident laser is transmitted from the back surface of the transparent substrate to the front surface of the transparent substrate, a focus is formed between the transparent substrate and the metal film, the transparent substrate only absorbs a small part of energy and transmits most of energy to the metal film, and the laser energy is concentrated on the metal film, so that the metal film can be effectively removed, can not damage the transparent substrate, the non-destructive regeneration of the transparent substrate can be realized, and the product yield can be effectively improved. Meanwhile, part of laser passes through the light-transmitting substrate and irradiates onto the reflecting plate, the reflecting plate reflects the part of laser onto the metal film, the laser irradiates onto the surface of the metal film again to transfer energy to the metal film again, and the residual metal film can be effectively removed for the second time, so that the metal film can be removed well, and the metal film removing efficiency is high.
Further, the incident laser light (i.e., the laser light transmitting energy to the metal film through the light transmitting substrate) and the reflected laser light (the laser light re-transmitting energy to the metal film through the reflection plate) reflected by the reflection plate respectively irradiate the metal film from both sides of the metal film, and the reflected laser light can randomly remove the metal film remaining at any position due to slight difference in the optical paths of the incident laser light and the reflected laser light, which is also effective in removing the remaining metal film between the scanning gaps of the incident laser light.
Experiments prove that the transmittance of the regenerated light-transmitting substrate obtained by the device for removing the metal film on the surface of the waste mask to 365nm light can reach more than 90%, and the thickness of the regenerated light-transmitting substrate meets the tolerance range of 6.35+/-0.1 (mm).
In conclusion, the device for removing the metal film on the surface of the waste mask can respectively irradiate the metal film from two sides of the metal film, can well remove the metal film, cannot damage the transparent substrate, has high metal film removal efficiency, can effectively improve the regeneration efficiency and the regeneration product yield of the transparent substrate, and realizes nondestructive and efficient regeneration of the transparent substrate.
In addition, the device for removing the metal film on the surface of the waste mask removes the metal film through laser irradiation, waste liquid is not generated, the laser irradiation is fast in metal film removal speed, and the metal film on the surface of the waste mask can be removed efficiently and environmentally-friendly. Further, the metal film on the light-transmitting substrate is arranged towards the reflecting plate, and metal film fragments generated in the laser removing process cannot remain on the light-transmitting substrate, so that adjacent areas cannot be covered, the problem that the metal film in the adjacent areas cannot be removed well due to insufficient laser irradiation energy caused by covering of the remaining fragments can be effectively solved, and the removal efficiency of the metal film is further improved.
In summary, compared with the prior art, the device for removing the metal film on the surface of the waste mask has the advantages of high metal film removal efficiency, high yield of regenerated products of the transparent substrate, environmental protection and no pollution.
In one embodiment, the light-transmitting substrate comprises quartz glass containing Si, and the transmittance of the light-transmitting substrate is greater than 50%.
In one embodiment, the transparent substrate having a transmittance of 50% or more includes a thin film having a layered structure and a layer structure formed of a metal material of a transition metal.
In one embodiment, the distance between the reflecting plate and the metal film is 1mm-10mm.
In one embodiment, the laser generator comprises: the laser device comprises a laser, a vibrating mirror and a focusing lens, wherein the vibrating mirror is positioned between the laser device and the focusing lens.
In one embodiment, the focusing lens is an F-theta lens.
In one embodiment, the laser generator further comprises: the beam splitter is used for splitting the laser beam emitted by the laser into at least two beams of laser and transmitting the at least two beams of laser to the vibrating mirror.
In one embodiment, the laser generator further comprises: and the folding reflecting mirror is positioned between the beam splitter and the vibrating mirror.
In one embodiment, the focal points of the at least two lasers are located on the same plane, and the connecting line of the optical axes of the at least two lasers is perpendicular to the scanning direction of the lasers.
In one embodiment, the apparatus for removing the metal film on the surface of the waste mask further comprises: the housing, the laser generator, the mask and the reflecting plate are all arranged in the housing.
In one embodiment, the reflective plate is removably mounted within the housing.
In one embodiment, the apparatus for removing the metal film on the surface of the waste mask further comprises: and a suction member, the suction member being partially located outside the housing, a suction port of the suction member being located inside the housing, and the suction port corresponding to a gap between the mask and the reflection plate.
In one embodiment, the apparatus for removing the metal film on the surface of the waste mask further comprises: the image acquisition device is connected to the side wall of the housing through a telescopic piece, and the telescopic piece is configured to drive the image acquisition device to reciprocate between the side wall of the housing and the upper part of the mask.
In one embodiment, the device for removing the metal film on the surface of the waste mask further comprises a controller, and the controller is respectively connected with the laser generator, the image acquisition device and the telescopic piece.
In one embodiment, the device for removing the metal film on the surface of the waste mask further comprises a sliding assembly, wherein the sliding assembly comprises a guide rail, a sliding block and a power element, the guide rail is arranged on the side wall of the housing along the vertical direction, the sliding block is connected to the guide rail in a sliding manner, the sliding block is connected with the laser generator, and the power element is connected with the sliding block.
In one embodiment, a handle is arranged on the housing, and/or a universal wheel is arranged at the bottom of the housing.
In one embodiment, the reflecting plate is a metal plate having high reflectivity to laser light; or, the reflecting plate is a plane reflecting mirror.
In one embodiment, the metal film comprises: moSi, moSiON, moSiCON, crN, crO, crCO, crCN and Cr.
The invention also provides a method for removing the metal film on the surface of the waste mask, which adopts the device for removing the metal film on the surface of the waste mask, and comprises the following steps:
placing a reflecting plate under the mask;
focusing a laser focus between a light-transmitting substrate and a metal film to transmit energy to the metal film, and transmitting high laser energy to the metal film from both sides of the metal film by transmitting the laser of energy to the metal film through the light-transmitting substrate and transmitting the laser of energy again to the metal film through reflection of the reflection plate, respectively, to remove the metal film.
In one embodiment, the step of focusing the laser focus between the light transmissive substrate and the metal film to transfer energy to the metal film comprises: dividing the laser into at least two laser beams to be irradiated onto the mask.
In one embodiment, the laser has a wavelength of 300nm-10.6 μm and an energy density of 1mJ/cm 2 -3mJ/cm 2 The pulse width of the laser is 10ns-500ns, the moving speed of the laser is 1000mm/s-50000mm/s, the line width of the laser is 0.01mm-0.05mm, and the frequency of the laser is 1000 kHz-10000 kHz.
In one embodiment, before the step of focusing the laser focus between the light-transmitting substrate and the metal thin film to transfer energy to the metal thin film, the method further comprises the steps of:
the step of irradiating the mask with laser light is preceded by the step of:
acquiring an image of the mask;
performing image analysis processing on the acquired image of the mask to acquire coordinates of an area where the metal film is located, and establishing a cleaning removal area;
the step of focusing a laser focus between a light-transmitting substrate and a metal thin film to transfer energy to the metal thin film includes: and irradiating the cleaning and removing area with laser.
The method for removing the metal film on the surface of the waste mask is implemented by applying the device for removing the metal film on the surface of the waste mask, and the metal film can be removed quickly, environmentally-friendly and nondestructively without additional work. The regeneration of the transparent substrate without damage can be realized, the regeneration efficiency of the transparent substrate is high, and the yield of regenerated products is high.
Drawings
FIG. 1 is a schematic diagram of a laser transmission path of an apparatus for removing a metal film on a surface of a waste mask according to an embodiment;
FIG. 2 is an enlarged view of a part of the structure of the portion A in FIG. 1;
FIG. 3 is a schematic view of the focal plane of an F-theta lens;
FIG. 4 is a schematic view of a focusing surface of a conventional focusing lens;
FIG. 5 is a structural side view of an apparatus for removing a metal film from a surface of a waste mask according to an embodiment;
FIG. 6 is a schematic diagram showing an internal structure of an apparatus for removing a metal film on a surface of a waste mask according to an embodiment;
FIG. 7 is a schematic view showing the internal structure of an apparatus for removing a metal film on the surface of a waste mask according to still another embodiment;
FIG. 8 is a flowchart illustrating a method for removing a metal film on a surface of a photomask;
FIG. 9 is a graph of transmittance measurements using a laser to remove a front and back mask;
FIGS. 10a to 10e are thickness measurement graphs of respective mask samples before removal with a laser;
FIGS. 11a to 11e are thickness measurement diagrams of mask samples after removal with a laser;
fig. 12 is a chart of thickness measurements of a mask before and after removal with a laser.
Reference numerals illustrate:
10-laser generator, 20-mask, 30-reflecting plate, 40-housing, 50-mount, 60-suction piece, 70-guide rail, 80-handle, 90-universal wheel, 100-telescopic rod, 110-CCD camera;
11-laser, 12-galvanometer, 13-F-theta lens, 14-beam splitter, 15-folding mirror, 16-common focusing lens, 21-transparent substrate, 22-metal film, 51-base, 52-supporting bump, 53-placement area.
Detailed Description
In the following description, numerous specific details are set forth in order to provide a more thorough understanding of the present invention. It will be apparent, however, to one skilled in the art that the invention may be practiced without one or more of these details. In other instances, well-known features have not been described in detail in order to avoid obscuring the invention. It should be understood that the present invention may be embodied in various forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the invention to those skilled in the art. Like numbers refer to like elements throughout. It will be understood that when a layer is referred to as being formed on another layer, it can be directly formed on the other layer or intervening film layers may be present. Where the terms "upper", "lower", "front", "back", etc. indicate an orientation or positional relationship based on that shown in the drawings, for convenience of description and simplicity of description only, and do not indicate or imply that the devices or elements referred to must have a specific orientation, be constructed and operated in a specific orientation, and thus should not be construed as limiting the invention, where "longitudinal" may be construed as a direction perpendicular to the substrate surface and "transverse" may be construed as a direction parallel to the substrate surface. As used herein, the singular forms "a", "an" and "the" are intended to include the plural forms as well, unless the context clearly indicates otherwise. It will be further understood that the terms "comprises" and/or "comprising," when used in this specification, specify the presence of stated features, steps, operations, elements, and/or components, but do not preclude the presence or addition of one or more other features, steps, operations, elements, components, and/or groups. As used herein, the term "and/or" includes any and all combinations of the associated listed items. The terms "identical," "equivalent," and "identical" include the meaning of being identical and identical, as well as the meaning of being approximately identical or approximately identical, under the allowable process errors. The terms "first," "second," and the like in the description are used for distinguishing between similar elements and not necessarily for describing a particular sequential or chronological order. It is to be understood that the terms so used are interchangeable under appropriate circumstances such that the embodiments of the invention described herein are, for example, capable of operation in other sequences than described or illustrated herein. Similarly, if a method described herein comprises a series of steps, and the order of the steps presented herein is not necessarily the only order in which the steps may be performed, and some of the described steps may be omitted and/or some other steps not described herein may be added to the method. If a component in one drawing is identical to a component in another drawing, the component will be easily recognized in all drawings, but in order to make the description of the drawings clearer, the specification does not refer to all the identical components in each drawing.
The present invention will be more fully described by way of examples below with reference to the accompanying drawings, which, however, are not intended to limit the scope of the invention.
Referring to fig. 1 to 7, an apparatus for removing a metal film on a surface of a waste mask (mask) according to an embodiment includes a laser generator 10, a mask 20, and a reflection plate 30. The laser generator 10, the mask 20 and the reflecting plate 30 are sequentially arranged at intervals from top to bottom, the mask 20 comprises a light-transmitting substrate 21 and a metal film 22 positioned on the light-transmitting substrate 21, the metal film 22 positioned on the light-transmitting substrate 21 is arranged towards the reflecting plate 30, the laser generator 10 is configured such that the focus of the emitted laser is positioned between the light-transmitting substrate 21 and the metal film 22 to transmit energy to the metal film 22, at least part of the laser irradiates the reflecting plate 30 through the light-transmitting substrate 21, the reflecting plate 30 reflects the laser to the metal film 22 to retransmit energy to the metal film 22, and the laser transmitting energy to the metal film 22 through the light-transmitting substrate 21 and the laser retransmitting energy to the metal film 22 through the reflecting plate 30 transmit high laser energy from both sides of the metal film 22 respectively to remove the metal film 22 from the light-transmitting substrate 21.
Specifically, one side surface of the transparent substrate 21 on which the metal film 22 is disposed is a front surface of the transparent substrate 21, the other opposite side surface is a back surface of the transparent substrate 21, and the metal film 22 on the transparent substrate 21 is disposed toward the reflective plate 30, that is, the front surface of the transparent substrate 21 is disposed toward the reflective plate 30. Further, the laser light emitted from the laser generator 10 irradiates the metal film 22 from above the light-transmitting substrate 21, and the laser light is transmitted from the back surface of the light-transmitting substrate 21 to the front surface of the light-transmitting substrate 21 to form a focus between the light-transmitting substrate 21 and the metal film 22.
The laser irradiates from above the mask 20 at a preset incident angle, in one embodiment, the preset incident angle is 0 °, and the incident angle of the laser irradiating the transparent substrate 21 is 0 °, that is, the laser irradiates perpendicularly to the transparent substrate 21, after the laser generator 10 is started, the laser transmits from the back of the transparent substrate 21 to the front of the transparent substrate 21, and forms a focus between the transparent substrate 21 and the metal thin film 22, so that the laser energy is concentrated on the metal thin film 22, and the metal thin film 22 can be sublimated and/or broken, so that most of the metal thin film 22 is removed. Meanwhile, at least part of the laser can pass through the transparent substrate 21 and irradiate onto the reflecting plate 30, the reflecting plate 30 reflects the laser transmitted through the transparent substrate 21 to the metal film 22, and the laser re-irradiates the surface of the metal film 22 to re-transmit energy, so that the reflected light has a slightly worse energy intensity than the incident light, but has a relatively larger light intensity, the residual metal film 22 can be effectively removed, and the metal film 22 is efficiently removed.
In another embodiment, the predetermined incident angle is greater than 0 ° and less than or equal to 30 °, the laser light is obliquely irradiated to the mask 20 at a small angle, and the incident angle of the laser light is greater than 0 ° and not less than 30 °. Preferably, the incident angle of the laser is greater than 0 ° and not less than 10 °. Further preferably, the incident angle of the laser is greater than 0 ° and not less than 5 °. Specifically, when the laser beam is incident obliquely at a small angle to irradiate the transparent substrate 21, after the laser generator 10 is started, the laser beam is transmitted from the back of the transparent substrate 21 to the front of the transparent substrate 21, and forms a focus between the transparent substrate 21 and the metal film 22, so that the laser beam energy is concentrated on the metal film 22, and at least part of the metal film 22 can be sublimated and/or broken, and at least part of the metal film 22 is removed. Meanwhile, at least part of the laser can pass through the transparent substrate 21 and obliquely irradiate onto the reflecting plate 30, the reflecting plate 30 reflects the laser to the metal film 22 and focuses on the surface of the metal film 22, according to the difference of the spot size of the laser and the distance between the reflecting plate 30 and the metal film 22, the focus of the laser reflected by the reflecting plate 30 on the surface of the metal film 22 and the focus position of the laser with the focus between the transparent substrate 21 and the metal film 22 can be partially overlapped, when the spot size of the laser is larger and the reflecting plate 30 is closer to the metal film 22, the focus of the laser reflected by the reflecting plate 30 on the surface of the metal film 22 and the focus position of the laser with the focus between the transparent substrate 21 and the metal film 22 are partially overlapped, so that the laser focusing energy is higher, and the removing efficiency of the metal film 22 is higher. When the spot of the laser light is small and the reflection plate 30 is far from the metal film 22, the focal point of the laser light reflected by the reflection plate 30 on the surface of the metal film 22 and the focal point of the laser light whose focal point is located between the light-transmitting substrate 21 and the metal film 22 are staggered, and depending on the direction in which the laser light is incident, the focal point of the laser light reflected by the reflection plate 30 on the metal film 22 may be located in a region of the metal film 22 which has not been scanned by the laser light or may be located in a region of the metal film 22 which has been scanned by the laser light. When the focal point of the laser light reflected by the reflecting plate 30 on the metal film 22 is located in the area not scanned by the laser light, the laser light reflected by the reflecting plate 30 irradiates the metal film 22 first to remove at least part of the metal film 22, and then irradiates the metal film 22 secondarily to remove the residual metal film 22 when the laser light with the focal point located between the light-transmitting substrate 21 and the metal film 22 moves thereto, thereby completely removing the metal film 22. Similarly, when the focal point of the laser light reflected by the reflection plate 30 on the metal film 22 is located in the area that has been scanned by the laser light, the laser light having the focal point located between the light-transmitting substrate 21 and the metal film 22 has previously irradiated the metal film 22 and removed at least a part of the metal film 22, and the laser light reflected by the reflection plate 30 secondarily irradiates the metal film 22 where the remaining metal film 22 is removed to completely remove the metal film 22.
In the device for removing the metal film on the surface of the waste mask in this embodiment, the incident laser is transmitted from the back of the transparent substrate 21 to the front of the transparent substrate 21, and forms a focus between the transparent substrate 21 and the metal film 22, the transparent substrate 21 only absorbs a small amount of energy and transmits most of energy to the metal film 22, and the laser energy is concentrated on the metal film 22, so that the metal film 22 can be effectively removed, the transparent substrate 21 is not damaged, the non-destructive regeneration of the transparent substrate 21 can be realized, and the product yield is effectively improved. Meanwhile, part of the laser passes through the transparent substrate 21 and irradiates onto the reflecting plate 30, the reflecting plate 30 reflects the part of the laser to the metal film 22, the laser re-irradiates the surface of the metal film 22 to transfer energy to the metal film 22 again, and the residual metal film 22 can be effectively removed for the second time, so that the metal film 22 can be removed well, and the removal efficiency of the metal film 22 is high.
Further, the incident laser light (i.e., the laser light transmitting energy to the metal film 22 through the light transmitting substrate 21) and the reflected laser light reflected by the reflecting plate 30 (the laser light re-transmitting energy to the metal film 22 through the reflecting plate 30) between the light transmitting substrate 21 and the metal film 22 respectively irradiate the metal film 22 from both sides of the metal film 22, and the reflected light can randomly remove the metal film 22 remaining at any position due to a slight difference in the optical paths of the incident laser light and the reflected laser light, which is also effective in removing the remaining metal film 22 between the scanning gaps of the incident laser light.
Experiments prove that the transmittance of the regenerated light-transmitting substrate obtained by the device for removing the metal film on the surface of the waste mask to 365nm light can reach more than 90%, and the thickness of the regenerated light-transmitting substrate meets the tolerance range of 6.35+/-0.1 (mm).
In summary, the device for removing the metal film on the surface of the waste mask can respectively irradiate the metal film 22 from two sides of the metal film 22, can obtain the effect of efficiently removing the metal film from two sides of the metal film, can well remove the metal film 22, does not damage the transparent substrate 21, has high removal efficiency of the metal film 22, and can effectively improve the regeneration efficiency and the regeneration product yield of the transparent substrate 21.
In addition, the device for removing the metal film on the surface of the waste mask removes the metal film 22 by laser irradiation, no waste liquid is generated, the laser irradiation is fast in removing the metal film 22, and the metal film 22 on the surface of the waste mask can be removed efficiently and environmentally-friendly. Further, the metal film 22 on the transparent substrate 21 is disposed towards the reflective plate 30, that is, the metal film 22 is disposed downward, so that fragments of the metal film 22 generated in the laser removing process do not remain on the transparent substrate 21, and thus, the adjacent area is not covered, so that the problem that the metal film 22 in the adjacent area cannot be removed well due to insufficient laser irradiation energy caused by covering of the remaining fragments can be effectively solved, and the removal efficiency of the metal film 22 is further improved.
In summary, compared with the prior art, the device for removing the metal film on the surface of the waste mask has the advantages of high removal efficiency of the metal film 22, high yield of regenerated products of the transparent substrate 21, environmental protection and no pollution.
In one embodiment, the light-transmitting substrate 21 comprises quartz glass containing Si, and the transmittance of the light-transmitting substrate 21 is greater than 50% and the dimensions comprise all light-transmitting substrates used in semiconductor and LCD processes. The device for removing the metal film on the surface of the waste mask can be used for regenerating all light-transmitting substrates of semiconductor and LCD processes.
In one embodiment, the transparent substrate 21 having a transmittance of 50% or more includes a thin film having a layered structure and a layered structure formed of a metal material of a transition metal. Specifically, the metal film 22 may include, but is not limited to, one or more of MoSi, moSiON, moSiCON, crN, crO, crCO, crCN and Cr. The above-described apparatus for removing the metal film on the surface of the waste mask can well remove the metal film 22 on the light-transmitting substrate 21.
In one embodiment, the reflection plate 30 is a metal plate. Preferably, the metal plate is made of a metal having a high reflectivity to laser light. Further preferably, stainless steel plates are used for the metal plates. The stainless steel plate has high reflectivity, convenient processing and low cost, can meet the use requirement and is beneficial to saving the cost. Further, the stainless steel plate can absorb part of the laser energy to raise the surface temperature, so that the metal film 22 can be heated, thereby facilitating the rapid and effective removal of the metal film 22 and further improving the removal efficiency of the metal film 22. Of course, in other embodiments, the reflective plate 30 may also be a planar mirror, which has a high reflectivity, and can also effectively ensure the removal efficiency of the metal film 22. Specifically, in practical application, a suitable reflection plate 30 may be selected according to practical needs, and the embodiment is not limited specifically.
In one embodiment, the distance between the reflective plate 30 and the metal film 22 is 1mm-10mm. Preferably, the distance between the reflection plate 30 and the metal film 22 is 3mm to 8mm. Specifically, in order to avoid secondary pollution of the reflection plate 30 and the light-transmitting substrate 21, the reflection plate 30 is preferably disposed adjacent to the metal film 22 on the light-transmitting substrate 21, and the reflection plate 30 does not contact the metal film 22. It is verified by experiments that the distance between the reflection plate 30 and the metal film 22 is preferably 1mm to 10mm. When the interval between the reflection plate 30 and the metal film 22 is less than 1mm, residues may adhere to the reflection plate 30 and the light-transmitting substrate 21 during the removal of the metal film 22, thereby causing secondary pollution of the reflection plate 30 and the light-transmitting substrate 21. However, if the distance between the reflection plate 30 and the metal thin film 22 is greater than 10mm, the efficiency of the reflection plate 30 to transfer energy may be lowered, the removal efficiency of the metal thin film 22 may be lowered, and the removal efficiency of the metal thin film 22 may be affected as a whole.
In one embodiment, the laser generator 10 includes: the laser 11, the galvanometer 12 and the focusing lens, the galvanometer 12 is located between the laser 11 and the focusing lens. The laser 11 is used for emitting laser, the galvanometer 12 is used for controlling laser beam deflection to realize that the laser scans the mask 20 in the X, Y plane, the focusing lens is positioned above the transparent substrate 21 and is used for focusing the focus of the laser between the transparent substrate 21 and the metal film 22, the laser emitted by the laser 11 is transmitted to the focusing lens through the galvanometer 12 and then forms the focus between the transparent substrate 21 and the metal film 22 after being focused through the focusing lens.
Specifically, galvanometer scanning galvanometer (Galvanometer Scanners) is used as galvanometer 12, which has high resolution, high repeatability, and stable drift value, and can make laser rapidly and stably move over the surface of mask 20, with high laser scanning efficiency, which helps to improve the removal efficiency of metal film 22. Further, the wavelength of the laser is 300nm-10.6 μm, and the Energy Density (Energy Density) of the laser is 1mJ/cm 2 -3mJ/cm 2 The Pulse Width (Pulse Width) of the laser is 10ns-500ns, the moving Speed (Scan Speed) of the laser is 1000mm/s-50000mm/s, the Line Width (Line Width) of the laser is 0.01mm-0.05mm, and the Frequency (Frequency) of the laser is 1000kHz-10000 kHz. In one embodiment, the laser light preferably has a wavelength of 365nm to 1064nm.
In one embodiment, the laser generator 10 further includes a Beam Splitter (Beam Splitter) 14, where the Beam Splitter 14 is configured to split the laser Beam emitted by the laser 11 into at least two laser beams and transmit the at least two laser beams to the galvanometer 12. Specifically, the beam splitter 14 is located between the laser 11 and the galvanometer 12, and the beam splitter 14 is preferably connected to the laser 11 through an optical fiber.
In the present embodiment, the laser light emitted from one laser 11 is divided into at least two parts by providing the beam splitter 14 to provide at least two laser light beams, and the mask 20 is scanned simultaneously with the at least two laser light beams. Specifically, at least two laser beams are irradiated perpendicularly to the mask 20, the focal points of the at least two laser beams are located on the same plane and are located between the light-transmitting substrate 21 and the metal thin film 22, and preferably the line connecting the optical axes of the at least two laser beams is perpendicular to the scanning direction of the laser beams. In this embodiment, at least two laser beams are adopted to scan the mask 20 simultaneously, so that the metal film 22 can be continuously removed by at least two laser beams, the efficiency of removing the metal film 22 is improved, and the connecting line of the optical axes of the at least two laser beams is perpendicular to the scanning direction of the laser beams, so that the scanning interval of the laser beams in the direction perpendicular to the scanning direction can be effectively reduced, the laser scanning interval is small, the scanning is more uniform, and the removal efficiency of the metal film 22 is further improved.
In one embodiment, the focusing lens is an F-theta lens 13, preferably a Telecommic F-theta lens. The F-theta lens 13 focuses the laser light on the interface between the transparent substrate 21 and the metal film 22, and the F-theta lens 13 can ensure that the laser always vertically irradiates the metal film 22 when the laser scans the metal film 22 through the vibrating mirror 12, so that the laser can scan the mask 20 in the X, Y plane by controlling the deflection of the laser beam through the vibrating mirror 12, and the size of a device for removing the metal film on the surface of the waste mask can be reduced.
Generally, as shown in fig. 4, the normal focusing lens 16 can only image on a circular Plane, and light from various positions is focused by the normal focusing lens 16 due to aberration, and the farther from the optical axis, the more the Focal Plane (Focal Plane) of the lens is curved in the lens direction, and when the laser deflection scanning is controlled by the galvanometer 12, the farther from the optical axis, the more the Focal position deviates, so that the efficiency of removing the metal thin film 22 by focusing the laser between the light-transmitting substrate 21 and the metal thin film 22 is greatly reduced. In this case, the laser can scan the mask 20 in the X, Y plane only by moving the mask 20, which requires that the device for removing the metal film on the surface of the waste mask has enough space for the mask 20 to move, which causes the device to have huge volume, affects the cost, occupies large space, and is inconvenient to use. In addition, when the laser beam exceeds one, the common focusing lens 16 cannot focus the focuses of the plurality of laser beams between the light-transmitting substrate 21 and the metal thin film 22 at the same time, and it is difficult for the beam having the focus not focused between the light-transmitting substrate 21 and the metal thin film 22 to generate a large energy effect, so that the effect of removing the metal thin film 22 is not good. Therefore, it is difficult to achieve simultaneous scanning of the mask 20 by at least two laser beams to continuously remove the metal thin film 22 using the general focusing lens 16.
In this embodiment, the focusing lens uses the F-theta lens 13, and the F-theta lens 13 can realize planar imaging, and focus on the same plane even if the light is far from the optical axis. As shown in fig. 3, the Focal Plane (Focal Plane) of the F-theta lens 13 is a Plane, the Focal points of the light from different positions are located in the same Plane after passing through the F-theta lens 13, and the laser is always perpendicularly irradiated to the metal thin film 22 after being focused by the F-theta lens 13, so that the Focal position can be easily positioned by always focusing between the light-transmitting substrate 21 and the metal thin film 22, and the laser can scan the entire mask 20 in the X, Y Plane by controlling the deflection of the laser beam by the galvanometer 12, thereby facilitating the processing. In addition, the vibrating mirror 12 is small in size and does not need a movement space, the size of a device for removing the metal film on the surface of the waste mask can be effectively reduced, the device for removing the metal film on the surface of the waste mask is compact in structure and small in size, cost is saved, and the device is convenient to use. Further, when more than one laser beam is focused by the F-theta lens 13, the different laser beams are focused on the same plane, so that each laser beam can be accurately focused between the transparent substrate 21 and the metal film 22, the mask 20 can be scanned simultaneously by at least two laser beams to continuously remove the metal film 22, and as the number of laser beams increases, a better processing effect can be obtained.
Further, in one embodiment, the laser generator 10 further includes a Folding Mirror (Folding Mirror) 15, the Folding Mirror 15 being located between the beam splitter 14 and the galvanometer 12. Specifically, the transmission directions of at least two laser beams separated by the beam splitter 14 are different, and the folding mirror 15 is used for changing the transmission direction of each laser beam, and converting the at least two laser beams into parallel beams transmitted along the same direction and then transmitting the parallel beams to the galvanometer 12, so that it can be ensured that the at least two laser beams can be stably transmitted to the galvanometer 12. The folding mirror 15 can change the transmission direction of the laser beam by folding reflection transmission mode, has compact structure and is beneficial to reducing the volume of the device for removing the metal film on the surface of the waste mask.
Specifically, as shown in fig. 1, in the present embodiment, two laser beams are formed by dividing the laser light into two parts by providing a beam splitter 14. The laser emitted by the laser 11 forms two laser beams through the beam splitter 14, the two laser beams are converted into parallel beams through the folding mirror 15 and then transmitted to the vibrating mirror 12, the two laser beams are respectively transmitted to the focusing lens through the vibrating mirror 12, after being focused by the focusing lens, the two laser beams are respectively and vertically irradiated on the surface of the mask 20, and two adjacent focuses are respectively formed between the transparent substrate 21 and the metal film 22, so that the two laser beams can scan the whole surface of the mask 20. During the removal of the metal film 22, the galvanometer 12 causes two laser beams to rapidly move across the surface of the mask 20, and the two laser beams respectively move and irradiate the entire mask 20 in a scanning manner, thereby continuously removing the metal film 22.
Specifically, as shown in fig. 1, in this embodiment, the dimensions of the folding mirror 15 are the same as those of the mirrors used in the galvanometer 12, the dimensions of each mirror are a, the distance between two parallel laser beams is b, the diameter of the focusing lens is Φ, and in order to ensure that both laser beams can be stably transmitted to the surface of the mask 20, the dimensions of the mirrors a, the distance b between two parallel laser beams, and the diameter Φ of the focusing lens satisfy the following relationship:. Further, the distance b between the parallel two laser beams is set according to the distance between the focuses of the two laser beams between the transparent substrate 21 and the metal film 22, the dimension a of the mirror and the dimension of the diameter phi of the focusing lensThe parameters are further set in a matching manner according to the distance b between the two parallel laser beams, and specific numerical values of the parameters can be set according to the above dimensional relationships according to actual needs in practical application, and the embodiment is not limited in detail.
In the present embodiment, two laser beams are provided by the beam splitter 14. In practical applications, the number of the specific split beams may be set as required. In other embodiments, two lasers 11 may be directly configured to provide two laser beams, or more lasers 11 may be provided to provide more laser beams, which may be selected according to specific needs in practical applications, and the embodiment is not limited specifically.
Further, the wavelengths of the at least two laser beams may be the same or different. For example, in the case of scanning irradiation with two laser beams, the two laser beams may be IR lasers having a wavelength of 1000nm or more in view of economy; in order to obtain a better cleaning effect, the two laser beams may be UV lasers with a wavelength below 400nm, and the laser beams with a wavelength in the UV region have obvious quantization effect and insignificant thermal effect, and the metal film 22 is removed by photons without damaging the transparent substrate 21, so that the efficiency of removing the metal film 22 is the best, but the economical efficiency is poor. Alternatively, other wavelengths of laser light may be selected, such as carbon dioxide laser light having a wavelength of 10.6 μm, etc., depending on the particular application requirements. Further, in order to achieve both economy and removal efficiency of the metal thin film 22, a combination of UV wavelength laser and IR wavelength laser may be used, wherein one laser uses UV wavelength laser and the other laser uses IR wavelength laser, and when the metal thin film 22 is removed, the UV laser damages the bonding between the metal thin film 22 and the transparent substrate by photons and removes the metal thin film 22, and the remaining metal thin film 22 can be cleaned by heat of the IR laser. When the wavelengths of the two laser beams are the same, the two lasers 11 may be used to provide the laser beams having the same wavelength, or one laser 11 may be used to split the laser beam into two parts by the beam splitter 14 to form two laser beams having the same wavelength. When the wavelengths of the two laser beams are different, two laser beams having different wavelengths are provided using the two lasers 11.
Furthermore, the at least two laser beams may both perpendicularly irradiate the transparent substrate 21, one of the at least two laser beams may perpendicularly irradiate the transparent substrate 21, the other laser beam may obliquely irradiate the transparent substrate 21 at a small angle, and the at least two laser beams may obliquely irradiate the transparent substrate 21 at a small angle, so that in practical application, the incident angles of the at least two laser beams may be set according to actual needs. Further preferably, when at least one of the plurality of laser beams is obliquely incident at a small angle to irradiate the transparent substrate 21, the incident angle of the laser beam which is obliquely incident at a small angle to irradiate the transparent substrate 21 is such that the focal point of the reflected light of the beam reflected by the reflecting plate 30 on the metal film 22 is at least partially coincident with the focal points of the other laser beams, so that the laser converging energy is higher and the removal efficiency of the metal film 22 is higher. Specifically, the focal point of the other laser beam may be a focal point where the other laser beam is focused between the light-transmitting substrate 21 and the metal film 22, or a focal point where the other laser beam is focused on the metal film 22 after being reflected by the reflecting plate 21, which is not particularly limited in this embodiment.
As shown in fig. 5, in one embodiment, the apparatus for removing the metal film on the surface of the waste mask further includes a housing 40, and the laser generator 10, the mask 20, and the reflection plate 30 are all disposed within the housing 40. In this embodiment, the cover 40 can provide protection for the laser generator 10, the mask 20 and the reflective plate 30, and can avoid safety accidents during laser scanning, which is helpful for improving safety. Further, the cover 40 has a protective door that can be opened and closed.
In one embodiment, the reflective plate 30 is removably mounted within the housing 40. Specifically, the detachable mounting mode of the reflecting plate 30 can be used for conveniently adjusting the mounting position of the reflecting plate 30, so that the distance between the reflecting plate 30 and the metal film 22 can be conveniently adjusted, and the use is convenient. In addition, the detachable installation of the reflecting plate 30 can also facilitate the cleaning maintenance or replacement of the reflecting plate 30.
Further, the apparatus for removing the metal film on the surface of the waste mask further includes a mounting seat 50, and the mounting seat 50 is provided in the housing 40 for mounting the reflection plate 30 and the mask 20. As shown in fig. 1 and 2, the mounting base 50 includes a base 51, a supporting protrusion 52 and a spacer (not shown in the drawings), the supporting protrusion 52 is formed by protruding at least partially upward from the peripheral edge of the base 51, the supporting protrusion 52 is used for providing mounting support for the mask 20, a placement area 53 is formed on the base 51 in the area inside the supporting protrusion 52 for placing the reflective plate 30, the reflective plate 30 and the mask 20 are placed at intervals by the supporting protrusion 52, the spacer is used for being placed between the base 51 and the reflective plate 30 to adjust the interval between the reflective plate 30 and the metal film 22, the spacer has various specifications, and a proper spacer is selected according to the interval between the reflective plate 30 and the metal film 22 in actual use, and the operation is convenient. Preferably, the height of the supporting projection 52 is not less than 10mm.
In one embodiment, the apparatus for removing the metal film on the surface of the waste mask further comprises: and a suction member 60, a portion of the suction member 60 being located outside the housing 40, and a suction port of the suction member 60 being located inside the housing 40, the suction port corresponding to a gap between the mask 20 and the reflection plate 30. Specifically, the suction member 60 is used for timely sucking out the gasified matters generated during the removal of the metal film 22, and simultaneously sucking out the fragments of the metal film 22 generated during the removal of the metal film 22, so as to avoid secondary pollution of the reflecting plate 30 and the transparent substrate 21. Further, in order to improve the suction efficiency, an air supply port is further provided on the casing 40, and preferably, the air supply port is disposed opposite to the suction port.
In one embodiment, the apparatus for removing the metal film on the surface of the waste mask further includes a sliding assembly including a guide rail 70, a slider (not shown) and a power element (not shown), wherein the guide rail 70 is disposed on the sidewall of the housing 40 in the vertical direction, the slider is slidably coupled to the guide rail, and the laser generator 10 is coupled to the slider, and the power element is coupled to the slider. In this embodiment, the driving force provided by the power element drives the slider to move up and down on the guide rail 70 along the vertical direction, and the slider slides on the guide rail 70 to drive the laser generator 10 to move up and down along the vertical direction, so that the focusing operation of the laser generator 10 is facilitated.
In one embodiment, the housing 40 is provided with a handle 80 and/or the housing 40 has a universal wheel 90 mounted to the bottom thereof. In this embodiment, the handle 80 and/or the universal wheel 90 are/is provided on the housing 40 to facilitate movement of the device for removing the metal film on the surface of the waste mask, and to facilitate use.
In one embodiment, the apparatus for removing the metal film on the surface of the waste mask further comprises: and an image pickup device connected to the sidewall of the housing 40 by a telescopic member configured to be capable of driving the image pickup device to reciprocate between the sidewall of the housing 40 and the space above the mask 20. Specifically, the telescopic member may include a telescopic rod 100 and a driving member (not shown in the drawings), and the driving member may be any one of a stepping motor, an air cylinder, or a hydraulic cylinder, and the image capturing device preferably employs a CCD camera 110. The CCD camera 110 is mounted at one end of the telescopic rod 100, and the driving member is mounted on the housing 40 and connected to the other end of the telescopic rod 100, and the driving member provides power to drive the telescopic rod 100 to stretch and retract so that the telescopic rod 100 drives the CCD camera 110 to reciprocate between the side wall of the housing 40 and the space above the mask 20. Before the laser 11 is started to perform laser scanning, and/or after the laser 11 is turned off after the metal film removing operation is completed, the driving member drives the telescopic rod 100 to extend, the telescopic rod 100 is switched from the contracted state to the extended state, and the telescopic rod 100 drives the CCD camera 110 to move above the mask 20 (as shown in FIG. 6), so that the CCD camera 110 acquires an image of the mask 20. After the CCD camera 110 collects the image of the mask 20, the driving member drives the telescopic rod 100 to retract, the telescopic rod 100 resets to the contracted state, and the telescopic rod 100 drives the CCD camera 110 to move to a position close to the side wall of the housing 40 (as shown in fig. 7), so that the CCD camera 110 leaves above the mask 20, and the CCD camera 110 is prevented from shielding laser to affect the laser scanning of the mask 20.
Further, in other embodiments, on the premise of meeting the requirement of the movement stroke, the telescopic member may also directly adopt any one of a stepper motor, an air cylinder or a hydraulic cylinder, and the embodiment is not particularly limited.
In one embodiment, the apparatus for removing the metal film on the surface of the waste mask further includes a controller (not shown) connected to the laser generator 10, the image pickup device, and the telescopic member, respectively. Specifically, the controller is respectively connected with the image acquisition device, the telescopic member, and the laser 11 and the galvanometer 12 in the laser generator 10, and the controller is used for respectively controlling the switching of the laser 11, the image acquisition device and the telescopic member, and the scanning speed and the scanning area of the galvanometer 12. In addition, the controller is further configured to receive the image acquired by the image acquisition device, and analyze the received image to acquire an area from which the metal film 22 is to be removed, so as to control the laser generator 10 to perform laser scanning irradiation only on the area from which the metal film 22 is to be removed. The laser generator 10 only scans and irradiates the region where the metal film 22 is to be removed, which helps to save scanning time and further improves the removal efficiency of the metal film 22.
In another aspect, the present invention also provides a method for removing a metal film on a surface of a waste mask, using the apparatus for removing a metal film on a surface of a waste mask, the method comprising the steps of:
s12: a reflection plate 30 is disposed under the mask 20.
Specifically, a proper cushion block is selected according to the interval requirement between the reflecting plate 30 and the metal film 22, and the reflecting plate 30 is placed on the cushion block after the proper cushion block is placed in the installation area, so that the placing operation of the reflecting plate 30 is completed.
S14: the laser focus is focused between the light-transmitting substrate 21 and the metal thin film 22 to transmit energy to the metal thin film 22, and high laser energy is transmitted from both sides of the metal thin film 22 by transmitting the laser energy to the metal thin film 22 through the light-transmitting substrate 21 and re-transmitting the laser energy to the metal thin film 22 by reflecting the laser energy to the metal thin film 22 through the reflection plate 30, respectively, to remove the metal thin film 22.
Specifically, after the reflecting plate 30 is placed, the focusing operation is performed on the laser 11, so that the laser emitted by the laser 11 is focused between the transparent substrate 21 and the metal film 22, after the laser focusing operation is completed, the metal film 22 is scanned by laser irradiation, the laser transmitting energy to the metal film 22 through the transparent substrate 21 and the laser re-transmitting energy to the metal film 22 through the reflecting plate 30 respectively transmit high laser energy to the metal film 22 from two sides of the metal film 22, and the metal film 22 is removed through the photon bombardment of the laser and/or the heat of the laser. Further, the method for removing the metal film on the surface of the waste mask in this embodiment is implemented by applying the apparatus for removing the metal film on the surface of the waste mask, and the principle of removing the metal film 22 is the same as that of the foregoing embodiment, and will not be described herein.
The method for removing the metal film on the surface of the waste mask is implemented by applying the device for removing the metal film on the surface of the waste mask, so that the metal film 22 can be removed efficiently and nondestructively, the nondestructively regeneration of the transparent substrate 21 is realized, the regeneration efficiency of the transparent substrate 21 is high, and the yield of regenerated products is high.
In one embodiment, step S12 is preceded by the further step of:
s10: mask 20 is mounted face down with metal film 22.
Specifically, the face of the mask 20 having the metal film 22 is placed on the support protrusions 52 downward, and mounting support is provided to the mask 20 by the support protrusions 52.
In one embodiment, in step S14, the step of focusing the laser focus between the light-transmitting substrate 21 and the metal thin film 22 to transfer energy to the metal thin film 22 includes: the laser is divided into at least two laser beams to be irradiated onto the mask 20.
Specifically, the laser emitted by the laser 11 is split into at least two laser beams by the beam splitter 14, the mask 20 is scanned simultaneously by the at least two laser beams, the metal film 22 can be continuously removed by the at least two laser beams, the efficiency of removing the metal film 22 is improved, and the connecting line of the focuses of the at least two laser beams is perpendicular to the scanning direction of the laser beams, so that the scanning interval of the laser beams in the direction perpendicular to the scanning direction can be effectively reduced, the scanning interval of the laser beams is small, the scanning is more uniform, and the removal efficiency of the metal film 22 is further improved.
In one embodiment, the reflection plate 30 is a metal plate. Preferably, the metal plate is made of a metal having a high reflectivity to laser light. Further preferably, stainless steel plates are used for the metal plates. Alternatively, the reflection plate 30 may be a plane mirror. Specifically, the reflection plate 30 andthe distance between the metal films 22 is 1mm to 10mm. Further, in one embodiment, the laser has a wavelength of 300nm-10.6 μm and an Energy Density (Energy Density) of 1mJ/cm 2 - 3mJ/cm 2 The Pulse Width (Pulse Width) of the laser is 10ns-500ns, the moving Speed (Scan Speed) of the laser is 1000mm/s-50000mm/s, the Line Width (Line Width) of the laser is 0.01mm-0.05mm, and the Frequency (Frequency) of the laser is 1000H-10000H.
In one embodiment, in step S14, before the step of focusing the laser focus between the light-transmitting substrate 21 and the metal thin film 22 to transfer energy to the metal thin film 22, the steps of:
an image of the mask 20 is acquired.
The acquired image of the mask 20 is subjected to image analysis processing to acquire coordinates of the region where the metal film 22 is located, and a cleaning removal region is established.
The step of focusing the laser focus between the light-transmitting substrate 21 and the metal thin film 22 to transmit energy to the metal thin film 22 includes: and (5) irradiating the cleaning and removing area with laser.
Specifically, before the mask 20 is irradiated with laser, the controller controls the expansion member to extend, the expansion member drives the image acquisition device to move above the mask 20, after the expansion member moves in place, the image acquisition device acquires an image of the mask 20 and sends the acquired image to the controller, and then the controller controls the expansion member to shrink, and the expansion member drives the image acquisition device to reset. Meanwhile, the controller analyzes and processes the received image, acquires coordinates of the area where the metal film 22 is located, establishes a cleaning and removing area, and then controls the laser generator 10 to perform irradiation scanning on the cleaning and removing area to remove the metal film 22.
In this embodiment, before the mask 20 is irradiated with laser, the image of the mask 20 is collected first, and the cleaning and removing area is established through image analysis processing, so that the laser generator 10 is controlled to irradiate only the cleaning and removing area, so as to irradiate only the area where the metal film 22 needs to be removed, thereby effectively saving the scanning irradiation time and being beneficial to further improving the removal efficiency of the metal film 22.
Further, after the metal film 22 is removed by laser irradiation on the mask 20, it is also possible to determine whether laser scanning is required again by performing image acquisition analysis on the mask 20 from which the metal film 22 has been removed. After the CCD camera collects the image of the mask 20 from which the metal film 22 is removed, the controller performs image analysis processing on the collected image, acquires coordinates of an area where the residual metal film 22 is located if the residual metal film 22 exists, establishes a cleaning removal area, and controls the laser generator 10 to irradiate only the cleaning removal area to remove the residual metal film 22, and if there is no residual metal film 22, no processing is performed, and the metal film 22 removal operation is completed, and the transparent substrate 21 may be taken out to perform the metal film removal operation on the next mask 20. Whether the metal film 22 remains can be checked through image analysis processing, and the mask 20 with the metal film 22 remaining is scanned again until the metal film 22 is completely removed, so that the image analysis processing has high checking efficiency and high precision, and the metal film 22 can be effectively ensured to be removed cleanly. In addition, the image contrast cleaning and removing area is used for only irradiating the area where the residual metal film 22 needs to be removed, so that the scanning irradiation time can be effectively saved, and the removal efficiency of the metal film 22 can be further improved.
Specifically, as shown in fig. 8, the detailed implementation procedure of the method for removing the metal film on the surface of the waste mask in this embodiment is as follows: first, a sample is loaded, the mask 20 is placed with the face having the metal film 22 down on the supporting protrusions 52, the reflecting plate 30 is placed under the mask 20 after the mask 20 is placed, the sample loading operation is completed, and the protective door is closed after the sample loading operation is completed. And then inputting data, inputting data of a scanning area and inputting a laser focal length, wherein the scanning area can be input through manual input, or can be automatically input according to a cleaning and removing area obtained through image analysis, and the laser focal length is preferably input manually. After data input is completed, focusing is performed before scanning, the position of the laser generator 10 on the guide rail 70 is adjusted according to the focal length of the laser, the focal length is corrected in real time in the focusing process, the laser generator 10 is controlled to stop moving after reaching the focusing position, the laser generator 10 is fixed at the focusing position, and focusing operation is completed. Then, laser conditions are set, and laser energy density, laser frequency and pulse width of laser are set according to scanning requirements. After the laser condition setting is completed, the scanning data are further configured, and the laser scanning speed and the laser linewidth are specifically set. Further, after finishing each data input operation, the laser 11 is started, the mask 20 is started to be scanned by laser to remove the metal film 22, and after finishing one scanning of the scanning area, the laser 11 is automatically turned off, and the device is automatically suspended. Finally, after the device is suspended, the protective door is opened to take out the transparent substrate 21 to finish the metal film 22 removing operation. Further, continuing to load new samples may perform a metal film 22 removal operation on the next mask 20. Of course, for the light-transmitting substrate 21 having the metal film 22 remaining, the light-transmitting substrate 21 may be reloaded for scanning again until the metal film 22 is completely removed.
In this embodiment, five samples of the mask 20 are selected, the above method for removing the metal film on the surface of the waste mask is adopted to perform laser metal film removal operation on the five samples, and the transmittance and thickness of the five samples before laser metal film removal and after laser metal film removal are measured, compared and analyzed respectively. Wherein, sample 1 and sample 2 are BIM waste masks, sample 3, sample 4 and sample 5 are PSM waste masks, and the metal film 22 of sample 1 comprises CrN/CrO; the metal film 22 of sample 2 comprises CrN/CrCN/Cr; the metal film 22 of sample 3 comprises CrO/MoSiON; the metal film 22 of sample 4 comprises CrN/CrCO/MoSiCON; the metal film 22 of sample 5 comprises CrN/Mosi.
As shown in fig. 9, before the metal thin film was removed by laser, the transmittance of the light of 365nm wavelength was 19.9975%, 20.6230%, 17.1790%, 19.8969% and 19.5698% for sample 1, sample 2, sample 3, sample 4 and sample 5, respectively. After the metal films are removed by laser, the transmittance of each sample 1, sample 2, sample 3, sample 4 and sample 5 to 365nm wavelength light is 90.7190%, 91.0381%, 90.2714%, 90.8542% and 90.5570%, respectively, after the metal films are removed by laser, the transmittance of the light-transmitting substrate of each sample is more than 90%, and the recycling requirement can be met.
Further, in this embodiment, thickness measurement is also performed on five samples, specifically, four measurement points are selected for each sample, and thickness measurement is performed on each measurement point before and after the metal film is removed by laser. As shown in fig. 10a to 10e, before the laser removal of the metal thin film, the average thickness values of sample 1 (shown in fig. 10 a), sample 2 (shown in fig. 10 b), sample 3 (shown in fig. 10 c), sample 4 (shown in fig. 10 d) and sample 5 (shown in fig. 10 e) were 6.395mm, 6.389mm, 6.365mm, 6.397mm and 6.402mm, respectively; as shown in fig. 11a to 11e, after the laser-removing of the metal thin film was performed on each sample, the average thickness values of sample 1 (as shown in fig. 11 a), sample 2 (as shown in fig. 11 b), sample 3 (as shown in fig. 11 c), sample 4 (as shown in fig. 11 d) and sample 5 (as shown in fig. 11 e) were 6.395mm, 6.388mm, 6.362mm, 6.396mm and 6.402mm, respectively, the thicknesses of the light-transmitting substrates of sample 1 and sample 5 were not changed before and after the laser-removing of the metal thin film, and the average thickness change rates of the light-transmitting substrates of the other three samples were also less than 0.05%. After the metal film is removed by laser, the thickness of the transparent substrate of each sample meets the tolerance range of 6.35+/-0.1 (mm), so that the non-destructive regeneration of the transparent substrate is realized, and the regeneration use requirement of the transparent substrate is met.
As described above, the apparatus and method for removing a metal film on a surface of a waste mask can remove a metal film rapidly, environmentally friendly and nondestructively. The regeneration of the transparent substrate without damage can be realized, the regeneration efficiency of the transparent substrate is high, and the yield of regenerated products is high.
It should be understood that in the above embodiments, the wavelength, energy density, scanning speed, pulse width, and the like of the laser may be reasonably selected according to the light transmission capability of the light-transmitting substrate and the material characteristics of the metal film to be removed, so that the recovery of the waste mask can achieve the best effect.
The foregoing description is only illustrative of the preferred embodiments of the present invention and is not intended to limit the scope of the present invention in any way, and any alterations and modifications made by those skilled in the art in light of the above disclosure shall fall within the scope of the present invention.
Claims (22)
1. An apparatus for removing a metal film from a surface of a waste mask, comprising: the mask comprises a light-transmitting substrate and a metal film arranged on the light-transmitting substrate, the metal film on the light-transmitting substrate is arranged towards the reflecting plate, the laser generator is configured to emit laser, the focus of the laser is arranged between the light-transmitting substrate and the metal film to transmit energy to the metal film, at least part of the laser irradiates onto the reflecting plate through the light-transmitting substrate, the reflecting plate reflects the laser to the metal film to retransmit energy to the metal film, the laser transmitting energy to the metal film through the light-transmitting substrate and the laser retransmitting energy to the metal film through the reflecting plate transmit high laser energy from two sides of the metal film respectively, so that the metal film is removed from the light-transmitting substrate.
2. The apparatus for removing a metal film on a surface of a photomask blank according to claim 1, wherein the light-transmitting substrate comprises quartz glass containing Si, and the transmittance of the light-transmitting substrate is more than 50%.
3. The apparatus for removing a metal film from a surface of a photomask as claimed in claim 1, wherein the transparent substrate having a transmittance of 50% or more comprises a film having a layered or multilayered structure composed of a metal material of a transition metal.
4. The apparatus for removing a metal film on a surface of a waste mask according to claim 1, wherein a distance between the reflecting plate and the metal film is 1mm to 10mm.
5. The apparatus for removing a metal film from a surface of a photomask as set forth in claim 1, wherein said laser generator comprises: the laser device comprises a laser, a vibrating mirror and a focusing lens, wherein the vibrating mirror is positioned between the laser device and the focusing lens.
6. The apparatus for removing metal film from a surface of a photomask as recited in claim 5, wherein said focusing lens is an F-theta lens.
7. The apparatus for removing metal film from a surface of a photomask as recited in claim 5, wherein said laser generator further comprises: the beam splitter is used for splitting the laser beam emitted by the laser into at least two beams of laser and transmitting the at least two beams of laser to the vibrating mirror.
8. The apparatus for removing metal film from a surface of a photomask as recited in claim 7, wherein said laser generator further comprises: and the folding reflecting mirror is positioned between the beam splitter and the vibrating mirror.
9. The apparatus for removing metal films from surfaces of waste masks according to any one of claims 7 to 8, wherein the focal points of at least two laser beams are located on the same plane, and the line connecting the optical axes of at least two laser beams is perpendicular to the scanning direction of the laser beams.
10. The apparatus for removing a metal film on a surface of a waste mask according to any one of claims 1 to 8, further comprising: the housing, the laser generator, the mask and the reflecting plate are all arranged in the housing.
11. The apparatus for removing metal film from a surface of a photomask blank as recited in claim 10, wherein said reflecting plate is detachably mounted in said housing.
12. The apparatus for removing a metal film from a surface of a photomask as recited in claim 10, wherein the apparatus for removing a metal film from a surface of a photomask further comprises: and a suction member, the suction member being partially located outside the housing, a suction port of the suction member being located inside the housing, and the suction port corresponding to a gap between the mask and the reflection plate.
13. The apparatus for removing a metal film from a surface of a photomask as recited in claim 10, wherein the apparatus for removing a metal film from a surface of a photomask further comprises: the image acquisition device is connected to the side wall of the housing through a telescopic piece, and the telescopic piece is configured to drive the image acquisition device to reciprocate between the side wall of the housing and the upper part of the mask.
14. The apparatus for removing metal film from a reticle surface of claim 13, further comprising a controller connected to the laser generator, the image capturing device and the telescoping member, respectively.
15. The apparatus for removing metal film from a reticle surface of claim 10, further comprising a slide assembly comprising a rail, a slider and a power element, the rail being disposed on a sidewall of the housing in a vertical direction, the slider being slidably coupled to the rail and the slider being coupled to the laser generator, the power element being coupled to the slider.
16. The apparatus for removing a metal film on a surface of a photomask blank according to claim 10, wherein a handle is provided on the cover and/or a universal wheel is mounted on the bottom of the cover.
17. The apparatus for removing a metal film on a surface of a photomask as recited in claim 10, wherein,
the reflecting plate is a metal plate with high reflectivity to laser;
or alternatively, the first and second heat exchangers may be,
the reflecting plate is a plane reflecting mirror.
18. The apparatus for removing a metal film on a surface of a waste mask according to any one of claims 1 to 8, wherein the metal film comprises: moSi, moSiON, moSiCON, crN, crO, crCO, crCN and Cr.
19. A method for removing a metal film on a surface of a waste mask using the apparatus for removing a metal film on a surface of a waste mask according to any one of claims 1 to 18, comprising the steps of:
placing a reflecting plate under the mask;
focusing a laser focus between a light-transmitting substrate and a metal film to transmit energy to the metal film, and transmitting high laser energy from both sides of the metal film by transmitting the laser of energy to the metal film through the light-transmitting substrate and transmitting the laser of energy again to the metal film through reflection of the reflection plate, respectively, to remove the metal film.
20. The method of claim 19, wherein focusing the laser focus between the light transmissive substrate and the metal film to transfer energy to the metal film comprises: dividing the laser into at least two laser beams to be irradiated onto the mask.
21. The method for removing a metal film on a surface of a photomask as claimed in claim 19, wherein the wavelength of the laser is 300nm to 10.6 μm, and the energy density of the laser is 1mJ/cm 2 -3mJ/cm 2 The pulse width of the laser is 10ns-500ns, the moving speed of the laser is 1000mm/s-50000mm/s, the line width of the laser is 0.01mm-0.05mm, and the frequency of the laser is 1000kHz-10000kHz.
22. The method for removing metal film on surface of waste mask as claimed in claim 19, wherein,
before the step of focusing the laser focus between the light-transmitting substrate and the metal thin film to transfer energy to the metal thin film, the method further comprises the steps of:
acquiring an image of the mask;
performing image analysis processing on the acquired image of the mask to acquire coordinates of an area where the metal film is located, and establishing a cleaning removal area;
The step of focusing a laser focus between a light-transmitting substrate and a metal thin film to transfer energy to the metal thin film includes: and irradiating the cleaning and removing area with laser.
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| CN202311227434.0A CN116967613A (en) | 2023-09-21 | 2023-09-21 | Device and method for removing metal film on surface of waste mask |
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| CN202311227434.0A CN116967613A (en) | 2023-09-21 | 2023-09-21 | Device and method for removing metal film on surface of waste mask |
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