JPH08222565A - Method and device for forming metallic film on electronic circuit board, and method of correcting its wiring - Google Patents

Abstract

PURPOSE: To correct the wire breaking defect of wiring made on an electronic circuit board accurately and safely by means of a simple correction head. CONSTITUTION: CVD material gas is analyzed and a metallic film is made in a wire-broken part so as to modify it by applying a laser beam, in condition that fluid for preventing mixing of air and leakage of CVD material gas is let flow into a groove 64, while supplying mixed gas of carrier gas and CVD material gas through a nozzle 61 into a cup-shaped modification head which is equipped with the said nozzle 61 and an objective 52 inside and has the said groove 64 at the face opposite to the board to be corrected and window for transmitting a laser beam. Hereby, the wire break defect of the wiring of the electronic circuit board can be corrected with simple structure and without needing complicated control and accurately and safely.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention provides a CV to a large-sized electronic circuit board without using a large vacuum chamber capable of accommodating a large-sized electronic circuit board such as a liquid crystal display device and a semiconductor integrated circuit.
D (Chemical Vapor Deposition) method (chemical vapor deposition method)
Method and apparatus for forming a metal film on an electronic circuit board for forming a metal film by means of the method, and particularly a method and apparatus for repairing a wiring on an electronic circuit board for repairing a disconnection defect in which a part of the wiring is missing on the large-sized electronic circuit board Regarding

[0002]

2. Description of the Related Art A large electronic circuit board can be mounted on a large electronic circuit board without using a large vacuum chamber capable of accommodating the large electronic circuit board.
A first conventional technique for forming a metal film by a VD (Chemical Vapor Deposition) method (chemical vapor deposition method) is as follows.
As described in JP-A-3-8428, a reaction mechanism (metal component) is deposited on the surface of a workpiece by laser CVD by partially creating a vacuum atmosphere with a special mechanism without using a vacuum chamber. It is known. That is,
In this first conventional technique, a vacuum body in which a plurality of concentric circle grooves and a central hole through which an energy beam is formed is formed on the surface of a workpiece so as to face each other, and a reaction product is deposited by differential pressure vacuum evacuation. The differential pressure evacuation chamber is formed only around the portion to be treated, and a gas mixture that undergoes a photolytic reaction or a thermal decomposition reaction is supplied to the prescribed groove and is reacted in the energy beam emission path, so that The reaction product is deposited.

A second conventional technique is Japanese Patent Laid-Open No. 6-
As described in JP-A-207276, laser CVD is performed in the atmosphere by supplying a material gas together with a carrier gas.
It is known that a metal film is formed on an object to be film-formed by. That is, in the second conventional technique, a source gas is supplied to a nozzle body having a through hole covered with a window at an upper end opening, and a laser beam is irradiated to locally form a metal film by thermal decomposition. At this time, the nozzle body is covered with a heated hood to prevent the source gas from adhering to prevent dust from adhering to the film-forming target.

[0004]

However, in the above-mentioned first and second conventional techniques, it is possible to easily and partially seal the surface of a large-sized electronic circuit board such as a liquid crystal display device or a semiconductor integrated circuit. By forming an atmosphere of a carrier gas, a CVD material gas and a mixed gas at a pressure almost equal to the atmospheric pressure and projecting a fine laser beam, a fine metal thin film is deposited on a partial surface by a CVD reaction. The issue to be tried was not considered.

An object of the present invention is, in order to solve the above-mentioned problems of the prior art, a partial pressure on a surface of a large-sized electronic circuit board such as a liquid crystal display device or a semiconductor integrated circuit, which can be easily sealed at almost atmospheric pressure. A method for forming a metal film on an electronic circuit board, in which an atmosphere of a carrier gas, a CVD material gas, and a mixed gas is formed at the same pressure as in (3), and a fine metal thin film can be deposited on a partial surface by a CVD reaction. And to provide the device. Another object of the present invention is to provide a carrier gas and a CVD material gas on a surface of a large-sized electronic circuit substrate such as a liquid crystal display device or a semiconductor integrated circuit, at a pressure almost equal to atmospheric pressure that enables easy sealing. A metal of an electronic circuit board, which is formed by forming an atmosphere of a mixed gas and observing the surface of the electronic circuit board at a high resolution so that a fine metal thin film can be deposited on a partial surface by a CVD reaction. A film forming method and an apparatus thereof are provided. Another object of the present invention is to provide a carrier gas and a CVD material gas on a surface of a large-sized electronic circuit substrate such as a liquid crystal display device or a semiconductor integrated circuit, at a pressure almost equal to atmospheric pressure that enables easy sealing. An electronic circuit in which an atmosphere of a mixed gas is formed, a repaired portion is observed at high resolution, and a fine metal thin film is deposited on the observed repaired portion by a CVD reaction to correct the connection between wirings. An object of the present invention is to provide a wiring correction method for a board and an apparatus thereof. Another object of the present invention is to provide a carrier gas and a CVD material gas on a surface of a large-sized electronic circuit substrate such as a liquid crystal display device or a semiconductor integrated circuit, at a pressure almost equal to atmospheric pressure that enables easy sealing. An electronic circuit board capable of forming an atmosphere of a mixed gas, depositing a fine metal thin film on a disconnection defect portion by a CVD reaction to correct a connection between wirings, and to remove a short-circuit defect or a surplus defect. To provide a wiring correction method and apparatus therefor.

[0006]

In order to achieve the above object, the present invention is formed between an open end of a mixed gas chamber (head container) and a surface of an electronic circuit board placed on a stage. In a state where the inside of the mixed gas chamber is sealed from the outside of the mixed gas chamber by the fluid existing in the minute gap,
A mixed gas in which a CVD material gas is mixed with a carrier gas is supplied to the inside of the mixed gas chamber, and a laser beam passes through a transparent portion of the mixed gas chamber to expose the surface of the electronic circuit board existing at the open end of the mixed gas chamber. A method of forming a metal film on an electronic circuit board, comprising: collecting and irradiating the light onto a desired portion to deposit the metal film by a CVD reaction of a CVD material gas contained in the supplied mixed gas.

The present invention also provides a mixed gas chamber (head container).
In a state where the inside of the mixed gas chamber is sealed from the outside of the mixed gas chamber by a fluid present in a minute gap formed between the open end of the electronic circuit board mounted on the stage and the surface of the electronic circuit substrate, C as a carrier gas inside the mixed gas chamber
A mixed gas in which VD material gas is mixed is supplied, the mixed gas leaked to the atmosphere outside the mixed gas chamber is exhausted through the minute gap, and a laser beam is passed through the transparent portion of the mixed gas chamber to generate gas in the mixed gas chamber. An electronic circuit characterized in that a metal film is deposited by a CVD reaction of a CVD material gas contained in the supplied mixed gas by condensing and irradiating the light on a desired portion of the surface of the electronic circuit board existing at the open end. It is a method for forming a metal film on a substrate.

The present invention also provides a mixed gas chamber (head container).
In a state where the inside of the mixed gas chamber is sealed from the outside of the mixed gas chamber by a fluid present in a minute gap formed between the open end of the electronic circuit board mounted on the stage and the surface of the electronic circuit substrate, C as a carrier gas inside the mixed gas chamber
A mixed gas in which a VD material gas is mixed is supplied, and the laser light for CVD is focused on a desired position on the surface of the electronic circuit board existing at the open end of the mixed gas chamber through the transparent portion of the mixed gas chamber. A metal film forming step of irradiating and depositing a metal film by a CVD reaction of a CVD material gas contained in the supplied mixed gas; and a pulsed laser beam for removal through a transmission window installed in the mixed gas chamber. An electronic circuit, comprising: a metal film removing step of condensing and irradiating an excess metal film on a surface of an electronic circuit board existing at an open end of the mixed gas chamber to remove the excess metal film. It is a method for forming a metal film on a substrate. Further, in the invention, in the method for forming a metal film on an electronic circuit board, when the mixed gas is supplied into the mixed gas chamber, the mixed gas is locally supplied to a portion where the metal film is deposited by a nozzle. Characterize. Further, in the invention, in the method for forming a metal film on an electronic circuit board, the gas pressure in the mixed gas chamber is about 80 Torr (about 10664 Pa) or less (about 76 Torr) from atmospheric pressure.
The pressure is reduced to 0 to 680 Torr). Further, in the present invention, in the method for forming a metal film on an electronic circuit board, when depositing a metal film by a CVD reaction, the spot diameter of the laser beam focused and irradiated on the electronic circuit board is 4 μmφ or less (Gaussian distribution) or laser. If the rectangular aperture projection of light is 10 μm × 10 μm or less, the power density is 1 × 10 ⁵
It is characterized in that it is ˜2 × 10 ⁶ W / cm ² .

The present invention also provides a mixed gas chamber (head container).
In a state in which the inside of the mixed gas chamber is sealed from the outside of the mixed gas chamber by a fluid present in a minute gap formed between the open end of the electronic circuit board mounted on the stage and the surface of the electronic circuit substrate, CVD as a carrier gas in the mixed gas chamber
Supplying a mixed gas in which material gases are mixed, and irradiating laser light through the transparent portion of the mixed gas chamber and condensing it at a disconnection point of wiring on the surface of the electronic circuit board existing at the open end of the mixed gas chamber C contained in the supplied mixed gas
A wiring correction method for an electronic circuit board, characterized in that a metal thin film is deposited by a CVD reaction of a VD material gas to connect the wirings. Further, according to the present invention, a seal gas composed of a carrier gas is supplied to a minute gap formed between an open end of a mixed gas chamber (head container) and a surface of an electronic circuit board placed on a stage to flow the seal gas. With the inside of the mixed gas chamber sealed from the outside of the mixed gas chamber by the above, a mixed gas in which a CVD material gas is mixed with a carrier gas is supplied to the inside of the mixed gas chamber, and the mixed gas is passed through the minute gap. The mixed gas leaked to the atmosphere outside the gas chamber is exhausted, and the laser light is focused through the transparent portion of the mixed gas chamber to the disconnection point of the wiring on the surface of the electronic circuit board existing at the open end of the mixed gas chamber. And irradiating, and depositing a metal thin film by the CVD reaction of the CVD material gas contained in the supplied mixed gas to connect the wirings.

The present invention also provides a mixed gas chamber (head container).
In a state where the inside of the mixed gas chamber is sealed from the outside of the mixed gas chamber by a fluid present in a minute gap formed between the open end of the electronic circuit board mounted on the stage and the surface of the electronic circuit substrate, C as a carrier gas inside the mixed gas chamber
A mixed gas in which a VD material gas is mixed is supplied, and laser light is condensed through a transparent portion of the mixed gas chamber to a disconnection point of wiring on the surface of the electronic circuit board existing at the open end of the mixed gas chamber. The connecting step of irradiating and depositing a metal thin film by the CVD reaction of the CVD material gas contained in the supplied mixed gas to connect the wirings, and the pulsed laser light for removal through the transparent portion of the mixed gas chamber And a removal step of removing a surplus metal film by condensing and irradiating a wire disconnection portion or a wiring short-circuit portion on the surface of the electronic circuit board existing at the open end of the mixed gas chamber. This is a method for correcting wiring of an electronic circuit board.

The present invention also provides a mixed gas chamber (head container).
In a state where the inside of the mixed gas chamber is sealed from the outside of the mixed gas chamber by a fluid present in a minute gap formed between the open end of the electronic circuit board mounted on the stage and the surface of the electronic circuit substrate, C as a carrier gas inside the mixed gas chamber
A mixed gas in which VD material gas is mixed is supplied, and laser light is collected through an objective lens installed in the mixed gas chamber to a disconnection point of wiring on the surface of the electronic circuit board existing at the open end of the mixed gas chamber. A wiring correction method for an electronic circuit board, characterized in that a metal thin film is deposited by a CVD reaction of a CVD material gas contained in the supplied mixed gas by irradiating with light to connect the wirings. The present invention also provides a mixed gas by supplying and flowing a seal gas made of carrier gas into a minute gap formed between the open end of the mixed gas chamber and the surface of an electronic circuit board placed on a stage. In a state where the inside of the chamber is sealed from the outside of the mixed gas chamber, a mixed gas in which a CVD material gas is mixed with a carrier gas is supplied to the inside of the mixed gas chamber, and the outside of the mixed gas chamber is passed through the minute gap. The mixed gas leaked into the atmosphere is exhausted, and the laser light is focused on the disconnection point of the wiring on the surface of the electronic circuit board existing at the open end of the mixed gas chamber through the objective lens installed in the mixed gas chamber. CV of the CVD material gas contained in the supplied mixed gas after being irradiated with
A wiring correction method for an electronic circuit board, characterized in that a metal thin film is deposited by a D reaction to connect the wirings.

In the wiring correction method for the electronic circuit board according to the present invention, when the mixed gas is supplied into the mixed gas chamber, the mixed gas is locally supplied by a nozzle to a portion where the metal film is deposited. It is characterized by Further, in the invention, in the wiring correction method for the electronic circuit board, the gas pressure in the mixed gas chamber is set to about 80 T less than atmospheric pressure.
orr (about 10664 Pa) or less (about 760-680T
The pressure is reduced to orr). The present invention also provides a CV wiring correction method in the electronic circuit board.
When depositing the metal film by the D reaction, the spot diameter of the laser beam focused and irradiated on the electronic circuit substrate is 4 μmφ or less (Gaussian distribution) or the rectangular aperture projection of the laser beam is 10 μm ×
Power density of 1 × 10 ⁵ to 2 × 10 ⁶ W at 10 μm or less
/ Cm ² It is characterized by. Further, according to the present invention, a fluid existing in a minute gap formed between the open end of the mixed gas chamber and the surface of the TFT substrate mounted on the stage causes the inside of the mixed gas chamber to move to the outside of the mixed gas chamber. In the sealed state, a mixed gas in which a CVD material gas is mixed with a carrier gas is supplied to the inside of the mixed gas chamber, and laser light is present at the open end of the mixed gas chamber through a transmitting portion of the mixed gas chamber. The thin film of metal is deposited by the CVD reaction of the CVD material gas contained in the supplied mixed gas by converging and irradiating at least the disconnection portion of the drain wiring on the surface of the TFT substrate to separate it from the adjacent pixel electrode. Is a method for correcting wiring on a TFT substrate.

Further, the present invention is characterized in that, in the wiring correction method for the TFT substrate, the CVD material gas is a metal carbonyl material gas. Further, according to the present invention, a fluid existing in a minute gap formed between the open end of the mixed gas chamber and the surface of the TFT substrate mounted on the stage causes the inside of the mixed gas chamber to move to the outside of the mixed gas chamber. In the sealed state, a mixed gas in which a carrier gas is mixed with a Mo (CO) ₆ material gas is supplied to the inside of the mixed gas chamber, and a laser beam is passed through a transparent portion of the mixed gas chamber to cause the mixed gas chamber to move. The Mo thin film is deposited by the CVD reaction of the Mo (CO) ₆ material gas contained in the supplied mixed gas by converging and irradiating at least the disconnection portion of the drain wiring on the surface of the TFT substrate existing at the open end. And a drain wiring is connected to the pixel wiring so as to be spaced apart from adjacent pixel electrodes.

In the present invention, an electronic circuit board is placed,
By allowing a fluid to exist in a minute gap formed between a stage movably installed on the base in at least X and Y axis directions and the surface of an electronic circuit board placed on the stage, A mixed gas chamber having an open end that seals against the outside, and the objective lens is installed substantially in the center so that the emission end is directly exposed to the inside, and the inside of the mixed gas chamber connected to the mixed gas chamber. Mixed gas supply means for supplying a mixed gas in which a CVD material gas is mixed with a carrier gas, a first exhaust means connected to the mixed gas chamber for exhausting the gas inside the mixed gas chamber, and the minute gas Second exhaust means for exhausting the mixed gas leaked to the outside of the mixed gas chamber through the gap, and light from the surface of the electronic circuit substrate mounted on the stage through the objective lens to obtain an electronic circuit. An observation optical system for observing the surface of the plate,
A laser light source that emits a laser light, and a laser light emitted from the laser light source is focused and irradiated onto the surface of an electronic circuit board placed on the stage through the objective lens,
An apparatus for forming a metal film on an electronic circuit board, comprising: a laser light irradiation optical system for depositing a metal thin film by a CVD reaction of a CVD material gas contained in the mixed gas supplied into the mixed gas chamber. is there.

Further, according to the present invention, an electronic circuit board is placed,
Internally by causing a carrier gas to flow in a minute gap formed between a stage movably installed on the base in at least the X and Y axis directions and a surface of an electronic circuit board placed on the stage. A mixed gas chamber having an open end that seals against the outside, and the objective lens is installed at approximately the center so that the emitting end is directly exposed to the inside, and the inside of the mixed gas chamber connected to the mixed gas chamber. A mixed gas supply means for supplying a mixed gas in which a CVD material gas is mixed with a carrier gas, a first exhaust means connected to the mixed gas chamber for exhausting the gas inside the mixed gas chamber, and the minute gas Second exhaust means for exhausting the mixed gas that has leaked to the outside of the mixed gas chamber through the gap, and light from the surface of the electronic circuit board mounted on the stage is obtained through the objective lens to generate an electronic signal. An observation optical system for observing the surface of the substrate, a laser light source that emits laser light, and a laser light emitted from the laser light source is focused on the surface of the electronic circuit board mounted on the stage through the objective lens. And a laser light irradiation optical system for irradiating and depositing a metal thin film by a CVD reaction of a CVD material gas contained in the mixed gas supplied into the mixed gas chamber. It is a film forming apparatus.

Further, according to the present invention, an electronic circuit board is placed,
By allowing a fluid to exist in a minute gap formed between a stage movably installed on the base in at least X and Y axis directions and the surface of an electronic circuit board placed on the stage, A mixed gas chamber having an open end that seals against the outside, and the objective lens is installed substantially in the center so that the emission end is directly exposed to the inside, and the inside of the mixed gas chamber connected to the mixed gas chamber. Mixed gas supply means for supplying a mixed gas in which a CVD material gas is mixed with a carrier gas, a first exhaust means connected to the mixed gas chamber for exhausting the gas inside the mixed gas chamber, and the minute gas Second exhaust means for exhausting the mixed gas leaked to the outside of the mixed gas chamber through the gap, and light from the surface of the electronic circuit substrate mounted on the stage through the objective lens to obtain an electronic circuit. An observation optical system for observing the surface of the plate,
A CVD laser light source that emits a CVD laser light, a removal processing laser light source that emits a removal processing pulsed laser light, and a CVD laser light emitted from the CVD laser light source on the stage through the objective lens. Laser light source for removal processing by depositing a metal thin film by the CVD reaction of the CVD material gas contained in the mixed gas supplied into the mixed gas chamber by converging and irradiating the surface of the electronic circuit board placed on And a laser light irradiation optical system for performing the removal processing on the metal thin film by converging and irradiating the surface of the electronic circuit board mounted on the stage with the removal processing pulsed laser light emitted from the objective lens. An apparatus for forming a metal film on an electronic circuit board, comprising:

Further, according to the present invention, an electronic circuit board is placed,
By allowing a fluid to exist in a minute gap formed between a stage movably installed on the base in at least X and Y axis directions and the surface of an electronic circuit board placed on the stage, And a mixed gas chamber having an open end for sealing the transparent part to the outside, the transmission part being installed substantially at the center so that the emission end is directly exposed to the inside, and the inside of the mixed gas chamber connected to the mixed gas chamber. To carrier gas to C
A mixed gas supply means for supplying a mixed gas in which VD material gas is mixed, a first exhaust means connected to the mixed gas chamber for exhausting gas inside the mixed gas chamber, and the mixing through the minute gap. Second exhaust means for exhausting the mixed gas leaked to the outside of the gas chamber, and light from the surface of the electronic circuit board mounted on the stage are obtained through a transparent portion installed in the mixed gas chamber to generate electrons. Observation optical system for observing the surface of the circuit board, and CVD for emitting laser light for CVD
Laser light source, a removal processing laser light source for emitting a removal processing pulsed laser light, and an electronic circuit board on which the CVD laser light emitted from the CVD laser light source is placed on the stage through the transparent portion. Pulse for removal processing emitted from the laser light source for removal processing by depositing a metal thin film by the CVD reaction of the CVD material gas contained in the mixed gas supplied to the inside of the mixed gas chamber by irradiating the surface of A laser light irradiation optical system for condensing and irradiating a surface of an electronic circuit board mounted on the stage with laser light through the transmitting portion to perform a removal process on a metal thin film. It is a metal film forming apparatus for a circuit board.

Also, in the present invention, in the metal film forming apparatus for the electronic circuit board, the gas pressure in the mixed gas chamber is about 80 Torr (about 10664 Pa) or less (about 7) from atmospheric pressure.
It is characterized by controlling so as to reduce the pressure to 60 to 680 Torr). The present invention is also directed to the NA (Numerica) of the objective lens in the metal film forming apparatus for the electronic circuit board.
l Aperture) is 0.35 or more and the magnification is 35 times or more. Further, in the present invention, in the metal film forming apparatus for an electronic circuit board, when depositing a metal film by a CVD reaction, the spot diameter of the laser light focused and irradiated on the electronic circuit board is 4 μmφ or less (Gaussian distribution) or laser. It is characterized in that a rectangular aperture projection of light is 10 μm × 10 μm or less and a power density is 1 × 10 ⁵ to 2 × 10 ⁶ W / cm ² . Further, in the invention, in the apparatus for forming a metal film on an electronic circuit board, the second evacuation means has an opening / closing section for carrying in and out the electronic circuit board, and a cover for covering at least the stage and the mixed gas chamber, And an exhaust unit connected to the cover for exhausting the mixed gas leaked into the cover. The present invention also provides
In the metal film forming apparatus of the electronic circuit board, the second
The exhaust means has an opening / closing part for loading / unloading the electronic circuit board, covers at least the stage and the mixed gas chamber, and a leak detecting means for detecting a leak of the CVD material gas in the apparatus cover. When a leak is detected by the leak detection means, the supply of the mixed gas is shut off, and an exhaust means for exhausting the inside of the device cover with a higher capacity than usual is provided. The present invention also provides
The apparatus for forming a metal film on an electronic circuit board is provided with an automatic focusing means.

[0019]

[Function] The wiring formed on the electronic circuit board such as the liquid crystal display device and the semiconductor integrated circuit is improved in the performance and the degree of integration.
Miniaturization is progressing. For this reason, in a series of wiring forming processes such as resist coating-exposure-etching-resist stripping, wiring defects, particularly disconnection defects, are rapidly increased due to foreign substances, which lowers the product yield and increases the cost. Is a major factor that brings about. Therefore, a portion (partially) of the disconnection defect portion on the surface of the large-sized electronic circuit board is covered with the mixed gas chamber, and the pressure of the mixed gas chamber is slightly lower than atmospheric pressure (about 80 Torr (about 10664 Pa) or less). Even in the atmosphere described above, the CVD material gas such as Mo (CO) ₆ can be supplied into the mixed gas chamber by the carrier gas such as N ₂ , and the energy density is 1 × 10 ⁵ to 2 × 10 ⁶ W.
It was confirmed by an experiment that a metal thin film (metal wiring) of Mo or the like having a film thickness of about 0.1 to 0.4 μm can be formed by converging and irradiating a laser beam of / cm ² with a spot diameter of 10 μm or less. This simplifies the control of the seal in the minute gap formed between the open end of the mixed gas chamber and the surface of the electronic circuit board.

That is, with the above-described structure, the pressure of the mixed gas chamber is slightly lower than the atmospheric pressure (about 80 Torr (about 10664)).
Pa) or less) so that the mixed gas chamber has M
By supplying a CVD material gas such as o (CO) ₆ by a carrier gas such as N _2, there is almost no pressure difference at the open end of the mixed gas chamber, the control of the seal is simplified, and the mixture of the atmosphere and the CVD material gas is eliminated. And a film thickness of 0.1 to 0.4 μm locally on the surface of the large-sized electronic circuit board at the disconnection defect portion covered with the mixed gas chamber.
A metal thin film (metal wiring) of Mo or the like having a thickness of about m can be formed to correct a disconnection point or the like. In particular, since the entry of air is prevented, the deposited metal thin film of Mo etc. (metal wiring)
It is possible to correct the disconnection point and the like by the characteristics of the metal thin film (metal wiring) such as Mo without being oxidized, that is, without deteriorating the film quality.

By installing the objective lens in the mixed gas chamber, only the mixed gas exists between the emission end of the objective lens and the surface of the electronic circuit board, and the NA (Nume
Rical Aperture) of 0.35 or more and a magnification of 30 times or more can be used,
A resolution of 0.3 μm or less can be obtained, cracks and the like can be observed and positioned, and defects such as disconnection with high accuracy can be corrected.

[0022]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS A method for forming a metal thin film on an electronic circuit board according to the present invention, an apparatus therefor, and a wiring correction method therefor will be specifically described with reference to the drawings. FIG. 1 is a schematic configuration diagram showing an embodiment of a metal thin film forming apparatus for an electronic circuit board according to the present invention. A head container (mixed gas chamber) including a stage 3 for mounting an electronic circuit board 2 formed of a TFT substrate or the like, and an objective lens 52 used for focusing, positioning and observing laser light on the gantry 1. 4 and laser oscillator 6
And an output adjusting mechanism 8 for adjusting the intensity of the laser light 7.
An optical system housing 9, a focus position detector 10, a TV camera 11 for observation, and a monitor 12 are installed,
In the optical system casing 9, mirrors 26, 27, 28 for reflecting the laser light 7, an illumination device 29 and a half mirror 3 are provided.
0 and a laser output detector 31 are installed. The stage 3 has four axes of X-axis, Y-axis, Z-axis, and θ-axis (rotational axis), and is based on alignment operation including the rotation of the electronic circuit board 2 and the inspection of the board itself. The operation of reproducing the disconnection position, the scanning of the laser beam at the time of correction, and the focusing and the like when observing and irradiating the laser beam are performed. The head container (mixed gas chamber) 4 is opened at one end to cover the periphery of the portion to be repaired on the electronic circuit board 2 and keep the periphery of the portion to be repaired on the electronic circuit board 2 in the atmosphere of the CVD material gas. CVD
It acts as a partition so that the material gas does not diffuse to other parts. The output adjusting mechanism 8 is for arbitrarily changing the output of the laser light oscillated (emits) from the laser oscillator 6. If the laser light 7 is linearly polarized light, the transmittance change due to the rotation of the Glen laser prism is changed. If the laser light output is not large, an ND filter or the like in which a metal film is vapor-deposited by continuously changing the film thickness on a glass substrate is adopted. The power supply current of the laser oscillator 6 may be directly controlled.

The optical system case 9 has a function of fixing a mirror or the like for guiding the laser light 7 to a portion to be corrected on the electronic circuit board 2 and also a function of shielding the laser light 7 from leaking to the outside. The focus position detector 10 always keeps the focus state during observation or correction, and further, the gap between the head container (mixed gas chamber) 4 and the surface to be corrected on the electronic circuit board 2 becomes constant. It is a detector for controlling. The focus detector 10 receives the image of the surface of the electronic circuit board 2 by the objective lens 52 with a CCD element or the like, and moves the stage 3 to Z until the position where the obtained image signal has the highest contrast is determined to be the focus. A signal for finely driving in the axial direction is output. Alternatively, a mask having a striped pattern is installed after another illumination device (not shown), only infrared light is selected, and the pattern is projected onto the electronic circuit board 2 by the objective lens 52. The infrared light pattern is received by the CCD element, the position where the stripe pattern has the highest contrast is determined to be the focus, and the stage 3 is finely driven in the Z-axis direction to that position. An exhaust pump 16 is connected to the head container 4 through a pipe 15, and a cylinder 18 and a valve 17 that store a CVD material gas through a valve 17a through a pipe 17 are provided.
An inert gas cylinder 21 containing an inert gas (carrier gas) is connected via b, and a valve 20 is connected by a pipe 20.
An inert gas cylinder 21 containing an inert gas (carrier gas) is connected via 0a. Further, an inert gas cylinder 21 containing an inert gas (carrier gas) is connected to the CVD gas cylinder 18 through a valve 22a by a pipe 22.

Further, the entire device cover 25 (indicated by a broken line)
Covered with. It is clear that the device cover 25 does not necessarily have to cover the laser oscillator 6 and the optical system housings 9 and 84. That is, the device cover 25 is mounted on the pedestal 1, and the stage 3 and the head container are movable so that the stage 3 can move in the X-axis, Y-axis, Z-axis, and θ-axis directions while the electronic circuit board 2 is placed. 4 is formed so as to cover the outside of the head container 4, and even if the CVD material gas leaks from the minute gap between the open end 65 of the head container 4 and the surface of the electronic circuit board 2, it is covered so as not to be released to the atmosphere. It is a thing. Further, the device cover 25 has an opening / closing portion 46 for loading or unloading the electronic circuit board 2 onto or from the stage 3 by, for example, a robot mechanism 45, between the electronic circuit board 2 and the transport means 44 or a loader for storage. Then, a control device 3 for controlling the stage 4, the laser oscillator 6, the valve and the like.
2, a detoxification device 33 for detoxifying the CVD material gas discharged from the exhaust pump 16, a duct 35 connected to the device cover 25, and a blower for forcibly exhausting the inside of the duct 35 and the exhaust pipe 36. 38, a large-capacity abatement device 39 for removing the removed exhaust gas and a gas discharged through the duct 35 again as necessary, and a leak detector 40 for detecting the leak of the CVD material gas. ing. The blower 38 normally operates at a low output, and has a function of operating at a high output in an emergency, for example, when the leakage detector 40 detects the leakage of the CVD material gas. During normal operation, the gas forcedly discharged by the blower 38 is opened to the atmosphere as it is through the pipe 41 shown by the broken line, and when the leak detector 40 detects the leakage of the CVD material gas, in an emergency. Only the large capacity abatement device 39 may be switched.

FIG. 2 is a diagram showing the details of the head container 4 installed at the tip of the optical system casing 9. The head container (mixed gas chamber) 4 has a structure in which a laser light transmission window 51 and an objective lens 52 are fixed to a head body 53. The laser light transmission window 51 and the O-ring 54,
55 is not necessary when the objective lens 52 is attached to the head body 53 while maintaining airtightness. In particular, when the objective lens 52 cannot be kept airtight with respect to the head main body 53 due to a screw portion or the like, the laser light transmission window 51 is kept by the O-rings 54 and 55 and the holding plate 56 so as to keep the airtightness.
A structure with is required. Although the objective lens 52 is attached to the head body 53 from the lower side of the chamber, it may be attached to the head body 53 from the upper side as long as airtightness is maintained. What is particularly important is that NA (Numerical Aperture) is used in order to be able to observe a pattern of 0.3 μm or less (wiring that is a disconnection) on the surface of the electronic circuit board 2 with high resolution.
(ture) is 0.35 or more and the magnification is 35 times or more. When such an objective lens is used, the working distance is about 18 mm or less even if a super-class lens is used, and the gap between the exit end of the objective lens and the surface of the electronic circuit board 2 becomes narrow. Therefore, it becomes difficult to mount the objective lens 52 away from the objective lens 52. That is,
In FIG. 2, for example, it is not only dimensionally difficult to maintain the airtightness of the chamber to which the mixed gas is supplied with the laser light transmission window 51 and to install the objective lens above the laser light transmission window 51. It is necessary to use a special objective lens which is not affected by resolution so as to accurately form a light image from the surface of the electronic circuit board 2 obtained through the laser light transmission window 51, even if it can be installed dimensionally. There is.
In any case, as shown in FIG. 2, by installing the objective lens 52 in the center of the head main body 53, it is possible to use the objective lens 52 having a magnification of about 100 times.

Further, the head body 53 is provided with a supply port 60 connected to the pipe 17 for supplying a carrier gas alone (inert gas alone) and a mixed gas of a carrier gas (inert gas) and a CVD material gas. A nozzle 61 that is connected to the supply port 60 and blows the mixed gas to a correction portion (inside the chamber) on the surface of the electronic circuit board 2 that constitutes the chamber;
Piping 1 for discharging the mixed gas supplied to the inside of the chamber
5, an outlet 62 connected to the pipe 5, a supply port 63 connected to the pipe 20 for supplying a sealing fluid such as an inert gas (carrier gas), and an inert gas (carrier A groove 64 for holding a sealing fluid such as gas) is formed in the open end 65. Although it has been described that the nozzle 61 is used to supply the mixed gas into the chamber of the head body 53, the nozzle 6 is not necessarily required.
It is not necessary to use 1. However, if the nozzle 61 is used, the mixed gas containing the new CVD material gas is always supplied to the correction portion on the surface of the electronic circuit board 2,
In this respect, using the nozzle 61 is superior.

C supplied inside the chamber of the head main body 53
By constantly discharging the mixed gas of the VD material gas and the carrier gas from the discharge port 62, the inside of the head container 4 is maintained at a pressure slightly lower than the atmospheric pressure to about 80 Torr or less. As described above, the pressure difference between the inside and the outside of the chamber of the head body 53 is as small as about 80 Torr or less, and therefore the atmosphere is controlled by the simple control that the seal gas is always flowed into the groove 64. Of the head material 53 or the CVD material gas as a mixed gas.
It can be easily prevented from leaking to the outside. Also, the spot diameter d of the laser beam focused by the objective lens 52
Is d = 2.44 λf / D (λ is the wavelength of the laser beam, about 0.5 μm, f is the focal length of the objective lens, D is the effective diameter of the objective lens, 3 to 4 mm). Is about 2.7 μm when the magnification is 30 times, about 2 μm when the magnification of the objective lens is 40 times, and about 0.8 μm when the magnification of the objective lens is 100 times. Then, by setting the power density of the focused laser light to about 5 × 10 ⁵ to 15 × 10 ⁵ W / cm ² , a mixed gas of a CVD material gas such as Mo (CO) ₆ and a carrier gas such as N ₂ By irradiating the laser beam to the disconnection defect portion in the atmosphere of, the irradiation portion is heated, and the CVD material gas such as Mo (CO) ₆ is decomposed only in that portion to deposit a metal film such as Mo, resulting in disconnection. Defects are fixed.

In the explanation of the apparatus shown in FIG. 1,
Although the description has been given of optically detecting the focal position, the present invention is not limited to this. For example, by supplying a sealing gas to the groove 64 formed in the head main body 53 and controlling the pressure so as to be constant, a minute gap between the open end 65 of the head main body 53 and the surface of the electronic circuit board 2 is obtained. Can be kept constant, and if the focus is always adjusted in that state, the positional relationship in the Z-axis direction between the objective lens 52 and the open end 65 is fixed, so that the electronic circuit board Two
The surface of the can be automatically brought into focus similarly to the case of optically focusing with reference to the objective lens 52. Next, T which is an example of the electronic circuit board 2
A case of repairing the disconnection defect of the drain line formed on the FT substrate will be described. Here, the drain line is a transparent conductive film made of a single layer or a plurality of layers of Al, W, Mo, Cr, Ti or the like formed on the glass substrate in a direction intersecting the gate line of the thin film transistor, or indium oxide or tin oxide. And is generally a two-layer structure wiring of Cr and Al. Width is 10 to 20 microns, film thickness is 0.1
It is about 0.5 micron. The disconnection defect usually occurs due to a foreign substance in the photolithography process, and the length of the disconnection portion is in the range of several to several hundreds of microns. However, the disconnection defect may cause a crack in the wiring.

First, the TFT substrate 2 having a disconnection defect is placed on the stage 3, and the stage 32 is driven by the control device 32 according to the inspection result information from the defect inspection device (not shown) to drive the head container (mixing). Objective lens 5 for gas chamber 4
Position so that the disconnection defect part falls within the field of view of 2. Therefore, the stage 3 is moved to the Z position while being detected by the focus position detector 10.
The surface of the TFT substrate 2 is moved to the focus position (focus position) of the objective lens 52 by about 0.2 to 0.4 .mu.
Match with an accuracy of m. In addition, at the position where there was focus, T
It is adjusted in advance so that the minute gap between the surface of the FT substrate 2 and the open end 65 of the head container 4 has a constant value. It is desirable that this gap be narrow, but the open end 6 of the head container 4 is
5 so as not to damage the surface of the TFT substrate 2,
It is set to several 10 to 100 μm.

Next, the surface of the TFT substrate 2 is the objective lens 52.
Is in focus, and the NA of the objective lens 52 is
Is 0.35 or more (NA is 0.4 when the magnification is 40 times and NA is 0.75 when the magnification is 100 times). Therefore, the objective lens 52 is irradiated by the illumination light emitted from the illumination device 29.
An optical image of the surface of the TFT substrate 2 illuminated through the objective lens 52 is magnified and formed on the TV camera 11 with high resolution. Then, an image of the surface of the TFT substrate 2 which has been enlarged and imaged with high resolution by the TV camera 11 is captured and displayed on the monitor 12. The stage 3 is moved while observing the screen displayed on the monitor 12, and as shown in FIG. 3A, one end (start point) 71 of the disconnection portion existing in a part of the drain wire 70 and the monitor 12 are displayed. Cursor lines 72, 7
The intersections of 3 are made coincident with each other, and the coordinates of the stage at this time are input and stored in the control device 32 to be the starting point of the correction. here,
The position of the intersection of the cursor lines 72 and 73 is adjusted in advance to the irradiation position of the laser light 7 (the center of the focused spot). Next, as shown in FIG. 3B, the stage 3 is moved to position the intersection of the other end (end point) 74 of the disconnection portion and the cursor lines 72 and 73, and the coordinates of the stage at this time are set to the controller 32. Input and memorize in and set the end point of the correction. The start point 71 and the end point 74 may be reversed. When the setting of the start point 71 and the end point 74 is completed, the positioning at the start point is performed again.

Next, the valve 20a provided in the pipe 20 connected to the inert gas cylinder 21 is opened by the control of the control device 32, and the inert gas (carrier gas) such as N _{2 is} supplied through the pipe 20 to the supply port 63. From the groove 64 provided in the open end 65 of the head body 53 to the open end 65.
Flow from a minute gap between the surface of the TFT substrate 2 and the surface of the TFT substrate 2. After that, in order to expel the atmosphere inside the chamber of the head body 53, the valve 17b connected to the inert gas cylinder 21 is opened by the control of the control device 32, and only the inert gas (carrier gas) such as N _{2 is} opened. Nozzle 61 through pipe 17
The pressure inside the chamber of the head main body 53 is equal to or slightly lower than the pressure (atmospheric pressure) outside the head main body 53 while being supplied from the exhaust pipe 16 through the pipe 15 by the exhaust pump 16. Control (so that it is less than about 80 Torr). As a result, it is possible to maintain the sealed state by the carrier gas formed in the minute gap between the open end 65 of the head body 53 and the surface of the TFT substrate 2.

Then, under the control of the controller 32,
The valve 22a and the valve 17a are opened, and a carrier gas such as N ₂ is supplied through a pipe 22 to a cylinder 18 in which crystal particles such as Mo (CO) ₆ are stored. ) ₆ etc. CVD
The material gas is forcibly carried by the carrier gas, that is, becomes a mixed gas in which the CVD material gas is mixed with the carrier gas, and is supplied from the cylinder 18 through the pipe 17.
While spraying on the defective portion from the nozzle 61, the head main body 53
The inside of the chamber (mixed gas chamber) is replaced with the atmosphere of the mixed gas. During this time, the pressure inside the chamber of the head body 53 is maintained so that the pressure outside the head body 53 (atmospheric pressure) is equal to or slightly lower than the pressure. The difference from atmospheric pressure is a few
It should be about 80 mmHg. This is the head container 4
In addition to the effect of the seal gas that seals the minute gap formed between the open end 65 of the substrate and the surface of the TFT substrate 2,
This is to completely prevent the CVD material gas contained in the mixed gas from leaking to the outside of the head body 53.

The seal gas and the carrier gas may be different gases or the same gas may be used. Both He,
In addition to an inert gas such as Ar, Xe, Kr, and Ne, N ₂ or the like (in the present invention, contained in the inert gas) can be selected and used. Further, as the carrier gas, a reducing gas such as H ₂ can be used alone or a mixed gas to which the reducing gas is added can be used as required. Here, a case will be described in which the seal gas and the carrier gas are the same gas and N ₂ (nitrogen) is selected so that there is no effect even if the seal gas enters the head main body 53. Further, various substances can be used as the CVD material gas. For example, Al (CH ₃ ) ₃ (alkyl metal such as trimethylaluminum) (this material is not a very good material), Mo (CO) ₆ (molybdenum hexacarbonyl), W (CO) ₆ (tungsten hexacarbonyl), etc. The material gas used for ordinary CVD or laser CVD such as metal carbonyl, copper hexafluoroacetylacetonate, and dimethylgold hexafluoroacetylacetonate can be used. Although some materials have low vapor pressure and require heating, it is necessary to use below the saturated vapor pressure at room temperature in order to prevent crystals from adhering to the inside of the piping and correction head. A substance having a high saturated vapor pressure at room temperature is desirable. In addition, it is desirable that it does not ignite in the air, has low toxicity, and has high stability. In that sense, dimethyl gold hexafluoroacetylacetonate or metal carbonyl, especially Mo.
(CO) ₆ (molybdenum hexacarbonyl) is suitable.
In this embodiment, the case where Mo (CO) ₆ (molybdenum hexacarbonyl) is selected as the CVD material gas will be described. By the way, generally, the saturated vapor pressure of the CVD material gas is
Less than atmospheric pressure. In the case of Mo (CO) ₆ (molybdenum hexacarbonyl), its saturated vapor pressure is about 100 mTo.
rr (0.1 Torr). In this case, the CVD material gas of Mo (CO) ₆ cannot be supplied alone unless the internal pressure of the chamber of the head main body 53 is 0.1 Torr or less. Therefore, in the case of the present invention, the pressure on the supply side is increased and Mo (CO) ₆ sublimated by a carrier gas such as N _{2 is used.}
Of the CVD material gas of
The CVD material gas of O) ₆ can be supplied to the inside of the chamber of the head main body 53 having the atmospheric pressure or a pressure close to the atmospheric pressure. That is, by using the carrier gas, the CVD material gas can be supplied to the inside of the chamber of the head body 53 under the atmospheric pressure or an atmosphere close to the atmospheric pressure for the first time.

Next, after the atmosphere inside the head main body 53 is replaced with the mixed gas of the CVD material gas and the carrier gas and the steady state is reached, the laser beam 7 is emitted from the laser oscillator 6 under the control of the controller 32. In this embodiment, a continuous wave Ar laser is used as the laser.
The fundamental wave of an AG laser or its harmonics, or these lasers pulsed can be used. The laser output is adjusted by retracting the mirror 28 for the output of the laser light 7 and measuring the laser light with the detector 31 while controlling the control device 3
2 by adjusting the output adjuster 8. Alternatively, the output of the laser light 7 transmitted through the mirror 28 may be detected. During the adjustment, the control device 32 closes a shutter (not shown) provided in front of the head container 4,
The control is performed so that the laser light 7 is not applied to the TFT substrate 2.

After adjusting the output, a shutter (not shown) is opened, and the laser beam 7 is applied to the starting point 71 of the disconnection portion which was positioned previously. After confirming the start of the deposition of the metal film, the stage 3 is moved from the starting point 71 to the ending point 74 at a predetermined speed, and when the movement of the stage 3 ends at the ending point 74, the irradiation of the laser light 7 is stopped. By these operations, as shown in FIG. 4, the CVD material gas is decomposed only in the portion irradiated with the laser beam to deposit the metal film 75 (Mo film in this embodiment), and the disconnection defect is corrected. Note that the metal film may not be deposited even when irradiated with laser light. This is because the disconnection part transmits light, while the drain line itself is Al.
Therefore, the reflectance is high and the thermal conductivity is too good so that the temperature does not rise until the material gas is decomposed. In such a case, first, the laser output is increased to irradiate for a short time (for example, 0.5 m to ¹ sec with an output of 200 mW (power density of about 6 × 10 ⁶ W / cm ² ) using pulsed laser light). Then, a spot-shaped deposited film is formed, and the deposited film is used as a starting point (nucleus), and laser light may be irradiated under normal conditions. Since the Mo film adopted here has a lower reflectance and a lower heat conduction than Al, it is possible to continuously form a metal film of Mo relatively easily.

Usually, Mo (CO) _{6 is} used as a CVD material gas.
When used alone (without carrier gas), Mo
(CO) ₆ gas pressure 0.1 Torr, laser output 20 mW,
Film thickness 1.5 μm on glass substrate at scanning speed 15 μm / s
Mo wiring of the same can be formed, but M of the same gas pressure
When diluting o (CO) ₆ with N ₂ at atmospheric pressure, laser output 1
0 to 60 mW (power density of about 3 x 10 ⁵ to 2 x 10 ⁶ W /
cm ² ), and a scanning speed of 2 to 5 μm / s, it was confirmed by an experiment that a Mo wiring having a film thickness of 0.1 to 0.4 μm can be formed.
00Ω / mm is obtained. When an ordinary objective lens for an optical microscope having a magnification of 40 times is used as the objective lens 52, a focused spot diameter of the laser beam of about 2 μm is obtained, and a deposited wiring width at this time is 5 to 10 μm. Considering an ordinary wire break length of several 10 μm, this wire can be connected with a resistance of 100 to 200 Ω including the connection resistance, and the drain wire break of the TFT substrate to be corrected in this embodiment is dimensionally and electrically. It is fully applicable to modifications.

When there are other disconnection defects on the same TFT substrate, the above procedure is repeated. When all the corrections are completed, the control device 32 controls the mixed gas of the CVD material gas and the carrier gas, which is being supplied into the chamber of the head body 53, to be only the carrier gas. After the CVD material gas is sufficiently discharged from the inside of the chamber of the head body 53, the carrier gas is supplied to the inside of the chamber of the head body 53 and the seal gas is supplied to the groove 64 of the open end 65 of the head body 53. Stop and lower Stage 3 to T
If necessary, the FT substrate 2 is retracted from the head container 4, the opening / closing portion 46 is opened, and the TFT substrate 2 is taken out from the stage 3 by the robot mechanism 45, for example, and the correction is completed. At the time of correction, the mixed gas of the CVD material gas and the carrier gas is always discharged from the exhaust port 62 through the pipe 15 by the exhaust pump 16, but the exhaust gas is rendered harmless by the abatement device 33. The treated gas is a blower 38, a pipe 4
Alternatively, the blower 38 may forcibly re-emit it to the atmosphere as it is through the large capacity abatement device 39.
It may be released into the atmosphere via At this time, the blower 38 is operating normally (low output operation). On the other hand, a duct 35 is connected to the device cover 25, and a blower 38
The inside of the cover 25 is exhausted by. This covers 2
The inside of 5 is always kept slightly depressurized from the atmosphere.

Further, a sensor (not shown) of the leak detector 40 is provided around the correction head 4, the CVD material gas cylinder 18
It is installed around, inside the duct 35, around the working position of the worker, etc., and is constantly monitored. Here, the CVD detector gas itself may be detected as the leak detector 40, or a component generated by decomposition due to heating or the like may be detected. In the case of Mo (CO) ₆ used in this example, the sampled gas is decomposed by heating at 250 to 350 ° C., and the generated CO (carbon monoxide) is detected, whereby M
o (CO) ₆ can be detected. Note that, in general,
Since the CO gas detector is interfered with by an organic solvent such as alcohol, caution is required when using it. By any chance
The CVD material gas leaks from the gap between the correction head 4 and the TFT substrate 2 due to the malfunction of the pressure control of the material gas or the seal gas, the failure of the exhaust pump, or the CVD due to the damage of the piping or the like.
When the material gas leaks and a CVD material gas having a concentration higher than the allowable concentration is detected, the CVD material gas cylinder 18
Blower 38, which automatically closes the original valve (not shown)
Is switched to a high-power operation and the path is switched so that the exhaust gas passes through the large-capacity abatement device 39, so that the atmosphere inside the cover 25 is rapidly exhausted and leaked.
The safety of the worker is ensured by taking measures such as preventing the material gas from diffusing out of the cover 25 and notifying the worker by an alarm or the like. In the above description, the case where the seal gas is used to prevent the entry of the atmosphere and the leakage of the material gas has been described, but if the cleaning process can be performed after the correction, the liquid is used instead of the seal gas. It is possible. As the liquid, magnetic fluid, pure water, etc. can be used in addition to various oils, and strict control of the pressure inside and outside the correction head is not required. However, when liquid is used, the automatic focusing mechanism realized by making the applied pressure of the seal gas constant cannot be used.

Next, another embodiment of the method and apparatus for forming a metal film on an electronic circuit board according to the present invention will be specifically described. FIG. 5 is a block diagram showing another embodiment of the metal film forming apparatus for an electronic circuit board according to the present invention.
A head container in which a stage 3 for mounting an electronic circuit board 2 on a gantry 1, a laser beam transmission window, an objective lens used for focusing, positioning and observing the laser beam, and a mixed gas chamber 4a formed therein are formed. 4, a CVD laser oscillator 6, an output adjusting mechanism 8 for adjusting the intensity of the laser light 7, a removal processing pulse laser oscillator 81, and a pulse laser light 8
A second output adjusting mechanism 83, an optical system housing 84, a focus position detector 10, a TV camera 11 for observation, and a monitor 12 are installed, and a laser is provided in the optical system housing 84. Mirrors 26, 27, 28 for reflecting the light 7, a mirror 85 for reflecting the laser light 82, and a laser light 82
And variable slits 86, 8 for shaping 7 and 7 into a rectangle
9, illumination device 29, half mirror 30, and laser C
A VD laser output detector 31 and a removal processing laser light detector 88 are installed. Note that the configurations given the same reference numerals as those shown in FIGS. 1 and 2 are the same.

Here, the rectangular slits 86, 89 are placed at positions where an image of the surface of the TFT substrate 2 at the focus position is formed by the objective lens 52 fixed in the head container 4. At this time, the size of the rectangle set by the rectangular slits 86 and 89 is the magnification M of the objective lens 52 used.
Is projected on the TFT substrate 2 in the size of the reciprocal of (that is, 1 / M). However, by irradiating the laser beam 7, the laser beam can be focused and radiated in a rectangular shape having a size of 1 / M set by the rectangular slit 89, and the laser output can be appropriately set in the CVD material gas atmosphere. By irradiating with the rectangular slit 89, a metal film can be deposited and formed in a rectangular shape having a size of 1 / M of the size set by the rectangular slit 89. Further, by irradiating the laser light 82, it is possible to focus and irradiate the laser light in a rectangular shape of 1 / M of the size set by the rectangular slit 86, and appropriately set the laser output in the CVD material gas atmosphere. By irradiating, the removal processing can be performed in a rectangular shape of 1 / M of the dimension set by the rectangular slit 86. The stage 3, the correction head 4, the output adjusting mechanisms 8 and 83, the optical system case 9, and the focus position detector 10 are as described in FIG. 1, and the description thereof is omitted here.
However, the output of the laser light may be adjusted by controlling the excitation current or the excitation voltage with the respective laser oscillator power supplies (not shown) without using the output adjustment mechanisms 8 and 83. In the head container 4 in which the mixed gas chamber 4a is formed,
An exhaust pump 16 is connected to the pipe 15, a cylinder 18 storing the CVD material gas is connected to the pipe 17, and an inert gas cylinder 21 is connected to the pipe 20. Also, the CVD gas cylinder 18
A cylinder 21 in which an inert gas is stored is connected by a pipe 22 to the above-mentioned desired portion and is covered with a device cover 25 (indicated by a broken line). Furthermore, the controller 4, which controls the stage 4, the laser oscillator 6, the valve, etc., the duct 35 connected to the device cover 25, and the leak detector 4.
0 is set. Here, the pipe 15 and the duct 35
1 is the same as that in FIG. 1, and is omitted in FIG.

CVD is applied to the head container 4 shown in detail in FIG.
By supplying the mixed gas of the material gas and the carrier gas and irradiating the laser beam 7 oscillated from the laser oscillator 6 to the disconnection defect portion, the CVD material gas can be decomposed and corrected by the deposited metal film. Further, the pulsed laser light 82 (power density 10 ⁶ to 10 ⁹⁾ oscillated from the pulsed laser oscillator 81 in a state where the CVD material gas is not supplied.
In W / cm ^2, as a pulse width 5~20ns (200n
You may be in s position. )), It is possible to remove excess defects and short-circuit defects, or to correct the shape of the disconnection defect portion.

The repairing method will be described below with reference to the case of repairing the disconnection defect and the surplus defect of the drain line formed on the TFT substrate 2 according to the drawings. Here, the drain line is a transparent conductive film made of a single layer or a plurality of layers of Al, W, Mo, Cr, Ti or the like formed on a glass substrate in a direction intersecting with the gate line of the thin film transistor, or indium oxide or tin oxide. , But generally 2 of Cr and Al
It is a layered wiring. The width is 10 to 20 μm, and the film thickness is 0.
It is about 1 to 0.5 μm. The disconnection defect and the surplus defect are usually caused by a foreign substance in the photolithography process and the etching process, and the size of the defect is in the range of several to several hundreds μm. First, the TFT substrate 2 having a disconnection defect or a surplus defect is placed on the stage 3, and the controller 32 drives the stage 3 according to the inspection result information from a defect inspection device (not shown) to drive the correction head 4 to move. The objective lens 52 is positioned so that a defective portion is included in the visual field. Therefore, the stage 3 is raised while being detected by the focus position detector 10, and T
The surface of the FT substrate 2 and the focus position (focus position) of the objective lens 52 are matched. The entire optical system may be lowered to focus. It should be noted that the fine gap between the surface of the TFT substrate 2 and the open end 65 of the head container 4 is adjusted in advance to a constant value at the focused position. It is desirable that this minute gap is narrow, but the open end 65 of the head container 4 is
Is set to about several tens to 100 μm so that there is no risk of damaging the surface of the TFT substrate 2.

First, the repair of disconnection defects will be described.
Move the stage 3 while observing on the monitor 12,
As shown in FIG. 6A, one end (start point) of the disconnection portion existing in a part of the drain line 70 is set to the cursor line 9 on the monitor 12.
The center coordinates (coordinates of the stage) at that time are surrounded by 1, 92, 93, and 94, and are input and stored in the control device 32 to be the starting point of the correction. It is desirable that the distance between the cursor lines set at this time is slightly narrower than that of the drain line. Here, the cursor lines 91, 92, 93, and 94 are adjusted so as to coincide with the projection position of the knife edge objective lens 52 forming the rectangular slit 89. That is, the cursor line 9
By moving the positions 1, 92, 93, 94, the knife edges forming the rectangular slit 89 are moved in synchronization with each other, and as a result, the cursor lines 91, 92, 93, 94 are moved.
The laser light 7 can be applied only to the portion surrounded by. Next, as shown in FIG.
To move the other end (end point) of the broken line to the cursor line 91,
Enclosed by 92, 93, and 94, and the center coordinates thereof are the control device 32.
Input and memorize it in and set it as the end point of the correction. The starting point and the ending point may be reversed. After setting the start point and end point, reposition the start point.

Next, the seal gas is supplied from the supply port 63. After that, while supplying only the carrier gas from the nozzle 61 in order to expel the atmosphere in the correction head main body 53,
The mixed gas chamber 4 of the head body 53 is exhausted from the exhaust port 62.
The pressure inside a is controlled to be equal to or slightly lower than the pressure outside the head body 53 (slightly lower than atmospheric pressure). After that, carrier gas and CVD
The mixed gas of the material gas is supplied from the cylinder 18 through the pipe 17, and the interior of the chamber 4a of the head body 53 is replaced with the mixed gas atmosphere while spraying the defective portion from the nozzle 61.
Also during this time, the pressure inside the chamber 4a of the head main body 53 is kept equal to or slightly lower than the pressure outside the head main body 53. The difference from the pressure on the outside of the head body 53 may be about several to 80 mmHg. This is because in addition to the effect of the sealing gas that seals the gap between the open end 65 of the head container 4 and the surface of the TFT substrate 2, the CVD material gas is completely prevented from leaking.

The seal gas and carrier gas are as described in the previous embodiment, and N ₂ (nitrogen) was selected here. The CVD material gas is also as described in the previous embodiment, and here, Mo (CO) is used.
₆ (molybdenum hexacarbonyl) was selected. The atmosphere in the head main body 53 is replaced with a mixed gas of a CVD material gas and a carrier gas, and after reaching a steady state, the laser beam 7 is irradiated. In this embodiment, a continuous wave Ar laser is used as the laser. The output of the laser light 7 retracts the mirror 28, and while measuring the laser light with the detector 31, the output adjuster 8
By adjusting. Alternatively, the output of the laser light 7 transmitted through the mirror 28 may be detected. During the adjustment, a shutter (not shown) in front of the head container 4 is closed so that the TFT substrate 2 is not irradiated with the laser light 7.

After the output is adjusted, a shutter (not shown) is opened, and the laser beam 7 is applied to the set position of the starting point of the disconnection portion which was positioned previously. After confirming the start of deposition of the metal film, the stage 3 is moved from the starting point to the ending point at a predetermined speed, and the irradiation of the laser beam 7 is stopped when the movement of the stage 3 is completed at the ending point. By these operations, as shown in FIG. 6C, the CVD material gas is decomposed only in the portion irradiated with the laser beam to deposit the metal film 95 (Mo film in this embodiment), and the disconnection defect is corrected. It The laser irradiation condition is that the set dimension is 8 μm square (dimension reduced and projected on the surface of the TFT substrate 2), and the laser output is 80.
〜150mW (Power density about 1 × 10 ⁵ 〜2.5 × 10 ⁵
W / cm ² ) and a scanning speed of 2 to 5 μm / s are selected. Under these conditions, M with a film thickness of 0.2 to 0.6 μm
o Wiring (width: 8 to 10 μm) can be formed, and wiring resistance of 200 to 1000 Ω / mm can be obtained. This wiring is
Considering a normal wire break length of several 10 μm, it is possible to connect with a resistance of 100 to 200 Ω including the connection resistance, and it can be sufficiently applied to repair the drain wire break of the TFT substrate which is the target of repair in this embodiment. The metal film may not be deposited even when the laser beam 7 is irradiated. This is because the substrate is glass and the laser beam 7 is transmitted therethrough, and since the drain line itself is a metal film having good thermal conductivity such as Al, it cannot be heated to the decomposition temperature of the CVD material gas. In such a case, it can be solved by irradiating the pulsed laser beam 82 and processing a part of the starting point of the disconnection portion of the drain wire. This is a rectangular projection pulsed laser light (the size of the rectangular aperture is about 2
with a laser output of 200 to 500 mW (power density of about 5 × 10 ^{6 to} 1.2 × 10 ⁷ W / cm ² ) and 10
By processing with pulse irradiation of about 0 ns), scattered particles such as Al of the drain line itself are generated and adhere to the periphery of the processed portion, and these adhered materials serve as nuclei for absorption of the laser beam 7 during CVD film formation. Is. Further, as described above, with the mixed gas containing Mo (CO) ₆ being supplied into the chamber 4a of the head main body, the output is 200 m using, for example, pulsed laser light.
With a W (power density of about 6 × 10 ⁶ W / cm ² ), the spot diameter is reduced to 2 μm or less and irradiation is performed for 0.5 to 1 sec to form a spot-shaped Mo precipitate film. The deposited film may be used as a nucleus for absorbing the laser beam 7 during the CVD film formation.

Thereafter, the procedure until taking out the TFT substrate 2 is as described in the previous embodiment. Especially TFT
In the case of the substrate 2, since the pixel electrode 100 exists in the vicinity of the drain line 70 as shown in FIG. 7, when repairing the disconnection of the drain line, a metal thin film such as Mo deposited by CVD is used for the pixel electrode. It is necessary to form so as to be separated from 100. If, for some reason, the deposited film 96 spreads when repairing the disconnection defect and comes into contact with the pixel electrodes 100 formed on both sides of the drain line 70 as shown in FIG. 7, deposition is performed by the method described below. Membrane 96
Needs to be separated from the pixel electrode 100. That is, in this case, the cursor lines 101, 102, 103 corresponding to the knife edges forming the rectangular slit 86,
The portion to be removed is surrounded by 104, and then the pulse laser beam 82 is oscillated by the pulse laser oscillator 81. At this time, the inside of the correction head 4 may be an air atmosphere or a carry gas atmosphere. As a result, the pulsed laser light 82 is applied to the area surrounded by the cursor lines 101, 102, 103, 104 on the monitor 12, and as shown in FIG.
The Mo film that was in contact with the pixel electrode 100 is removed. Although a part of the pixel electrode 100 is also removed depending on the laser output, if the short-circuit portion with the drain line 70 is eliminated, the function as a pixel can be sufficiently exerted and the correction is completed. When it contacts both the pixel electrodes 100 and 100 ', it may be corrected in two steps. It is obvious that not only the shape correction of the portion where the disconnection defect is corrected but also the excess defect or the short circuit defect of the drain line 70 itself can be corrected by the same procedure, and the description thereof will be omitted here.

As described in the description of the first embodiment, it is possible to realize automatic focusing by using the principle of the air micrometer using the seal gas, or to use a liquid instead of the seal gas. . As described above in detail, according to the correction device of the present embodiment,
It is possible to correct not only the disconnection defect but also the surplus defect, the short-circuit defect, and the shape defect of the surplus defect generated at the time of repairing the disconnection defect. Further, here, only the defect repair of the drain line has been described, but the gate line, the power source line and the like can be repaired in exactly the same manner. CV
The case where the D material gas leaks is also as described in the previous embodiment, and the description is omitted here. The head container 4 has been described with the structure shown in FIG. 2, but various shapes can be adopted. For example, as shown in FIG. 8, by adding the sleeve 110 to the head main body 53, the facing area of the electronic circuit board 2 can be increased, which is very effective in preventing the entry of air and the leakage of material gas. . Furthermore, since the flow of the mixed gas of the material gas and the carrier gas supplied from the nozzle 61 is not disturbed,
There is also an effect that a film can be formed uniformly and with good reproducibility.
In addition, a plurality of nozzles are installed so as to face each other, a mixed gas of a carrier gas and a CVD material gas is blown out from the plurality of nozzles, and a vortex is formed in the laser irradiation portion to stabilize the CVD material gas. Can be supplied. Besides, even if the nozzle is arranged parallel to the optical axis and the mixed gas of the carrier gas and the material gas is supplied perpendicularly to the surface of the TFT substrate 2, the same effect as that described in the embodiment can be obtained.

[0049]

According to the present invention, a C having a pressure substantially equal to the atmospheric pressure is applied to a large electronic circuit board such as a TFT substrate.
A VD material gas atmosphere is partially formed, and a metal thin film is deposited by laser CVD in this partially formed CVD material gas atmosphere, so that a large-sized electronic circuit board can be very efficiently, accurately and safely. It is possible to correct a disconnection defect or the like of the wiring formed above, and it is possible to improve the yield of products. Further, according to the present invention, it is possible to simplify the structure of the mixed gas chamber and the control of the seal that can be applied to a large-sized electronic circuit board, simplify the laser CVD apparatus, and achieve a significant cost reduction. Play.

[Brief description of drawings]

FIG. 1 is an overall configuration diagram showing an embodiment of a metal thin film forming apparatus for an electronic circuit board according to the present invention.

FIG. 2 is an enlarged sectional view showing a portion of the head container shown in FIG.

FIG. 3 is a diagram for explaining a method of correcting a disconnection defect of a drain line in a TFT substrate according to the present invention.

FIG. 4 is a diagram showing a result of correcting a disconnection defect of a drain line in a TFT substrate according to the present invention.

FIG. 5 is a configuration diagram showing an embodiment of a metal thin film forming apparatus for an electronic circuit board according to the present invention.

FIG. 6 is a diagram for explaining another method of correcting the disconnection defect of the drain line in the TFT substrate according to the present invention.

FIG. 7 is a diagram showing a method of further correcting the shape of the portion of the TFT substrate according to the present invention in which the disconnection defect of the drain line is corrected.

FIG. 8 is a cross-sectional view showing an enlarged portion of a head container different from FIG.

[Explanation of symbols]

2 ... Electronic circuit board (TFT substrate), 3 ... Stage 4 ... Head container, 4a ... Mixed gas chamber, 6 ... Laser oscillator 7 ... Laser light, 9 ... Optical system housing, 16 ... Vacuum pump 18 ... CVD material gas cylinder, 21 ... Carrier gas cylinder, 25 ... Device cover 33 ... Harmful device, 35 ... Duct, 38 ... Blower, 40 ...
Leak detector 52 ... Objective lens, 61 ... Nozzle, 64 ... Groove, 65 ... Open end, 81 ... Pulse laser oscillator

Claims (18)

[Claims] 1. The inside of the mixed gas chamber is filled with the fluid existing in a minute gap formed between the open end of the mixed gas chamber and the surface of the electronic circuit board mounted on the stage. In a state of being sealed from the outside, a mixed gas in which a CVD material gas is mixed with a carrier gas is supplied to the inside of the mixed gas chamber, and laser light is passed through a transparent portion of the mixed gas chamber to an open end of the mixed gas chamber. A metal of an electronic circuit board, characterized in that a metal film is deposited by a CVD reaction of a CVD material gas contained in the supplied mixed gas by condensing and irradiating a desired portion on a surface of an existing electronic circuit board. Film forming method. 2. The inside of the mixed gas chamber is moved inside the mixed gas chamber by a fluid existing in a minute gap formed between an open end of the mixed gas chamber and a surface of an electronic circuit board mounted on the stage. In a state of being sealed from the outside, a mixed gas in which a CVD material gas is mixed with a carrier gas is supplied to the inside of the mixed gas chamber, the atmosphere outside the mixed gas chamber is exhausted, and laser light is emitted from the mixed gas chamber. Through the transparent portion of the mixed gas chamber to a desired position on the surface of the electronic circuit board existing at the open end of the mixed gas chamber to irradiate the metal film by the CVD reaction of the CVD material gas contained in the supplied mixed gas. A method for forming a metal film on an electronic circuit board, which comprises depositing. 3. The inside of the mixed gas chamber is moved inside the mixed gas chamber by a fluid existing in a minute gap formed between the open end of the mixed gas chamber and the surface of an electronic circuit board mounted on the stage. In a state of being sealed from the outside, a mixed gas in which a CVD material gas is mixed with a carrier gas is supplied to the inside of the mixed gas chamber, and a laser beam for CVD is opened through the transparent portion of the mixed gas chamber to open the mixed gas chamber. A metal film forming step of condensing and irradiating a desired position on the surface of the electronic circuit board existing at the end, and depositing a metal film by a CVD reaction of the CVD material gas contained in the supplied mixed gas; A pulsed laser beam for removal is condensed through a transmission window installed in the mixed gas chamber onto the excess metal film on the surface of the electronic circuit board existing at the open end of the mixed gas chamber to irradiate the excess metal. Remove the membrane Electronics metal film forming method of a substrate characterized by having a metal film removing step. 4. When the mixed gas is supplied into the mixed gas chamber, the mixed gas is locally supplied by a nozzle to a portion where the metal film is deposited.
Alternatively, the method for forming a metal film of an electronic circuit board according to 2 or 3. 5. The inside of the mixed gas chamber is filled with the fluid existing in a minute gap formed between the open end of the mixed gas chamber and the surface of the electronic circuit board mounted on the stage. In a state of being sealed from the outside, a mixed gas in which a CVD material gas is mixed with a carrier gas is supplied into the mixed gas chamber, and laser light is present at an open end of the mixed gas chamber through a transmitting portion of the mixed gas chamber. Characterized in that the wiring is connected by condensing and irradiating on a disconnection portion of the wiring on the surface of the electronic circuit board to deposit a metal thin film by a CVD reaction of the CVD material gas contained in the supplied mixed gas. Wiring correction method for electronic circuit board. 6. The mixed gas is supplied by flowing a seal gas made of a carrier gas into a minute gap formed between an open end of the mixed gas chamber and a surface of an electronic circuit board placed on a stage. In a state where the inside of the chamber is sealed from the outside of the mixed gas chamber, a mixed gas in which a CVD material gas is mixed with a carrier gas is supplied to the inside of the mixed gas chamber,
The atmosphere outside the mixed gas chamber is evacuated, and laser light is focused through the transparent portion of the mixed gas chamber and irradiated onto the disconnection point of the wiring on the surface of the electronic circuit board existing at the open end of the mixed gas chamber. C contained in the supplied mixed gas
A wiring correction method for an electronic circuit board, characterized in that a metal thin film is deposited by a CVD reaction of a VD material gas to connect the wirings. 7. The inside of the mixed gas chamber is moved inside the mixed gas chamber by a fluid existing in a minute gap formed between the open end of the mixed gas chamber and the surface of the electronic circuit board mounted on the stage. In a state of being sealed from the outside, a mixed gas in which a CVD material gas is mixed with a carrier gas is supplied to the inside of the mixed gas chamber, and laser light is passed through a transparent portion of the mixed gas chamber to an open end of the mixed gas chamber. A connecting step of connecting the wirings by condensing and irradiating the wire breakage points on the surface of the existing electronic circuit board to deposit a metal thin film by the CVD reaction of the CVD material gas contained in the supplied mixed gas And condensing the pulse laser light for removal through the transparent portion of the mixed gas chamber to the disconnection point or the short circuit point of the wiring on the surface of the electronic circuit board existing at the open end of the mixed gas chamber. Irradiation Wiring correction method of an electronic circuit board; and a removing step of removing the excess metal film Te. 8. The inside of the mixed gas chamber is moved inside the mixed gas chamber by a fluid existing in a minute gap formed between the open end of the mixed gas chamber and the surface of the electronic circuit board placed on the stage. In a state of being sealed from the outside, a mixed gas in which a CVD material gas is mixed with a carrier gas is supplied to the inside of the mixed gas chamber, and laser light is passed through an objective lens installed in the mixed gas chamber. The wiring is connected by condensing and irradiating the disconnection point of the wiring on the surface of the electronic circuit board existing at the open end and depositing a metal thin film by the CVD reaction of the CVD material gas contained in the supplied mixed gas. A method for correcting wiring of an electronic circuit board, comprising: 9. The mixed gas is supplied by supplying and flowing a seal gas made of a carrier gas into a minute gap formed between the open end of the mixed gas chamber and the surface of an electronic circuit board mounted on the stage. In a state where the inside of the chamber is sealed from the outside of the mixed gas chamber, a mixed gas in which a CVD material gas is mixed with a carrier gas is supplied to the inside of the mixed gas chamber,
The atmosphere outside the mixed gas chamber is evacuated, and the laser light is condensed through the objective lens installed in the mixed gas chamber to the disconnection point of the wiring on the surface of the electronic circuit board existing at the open end of the mixed gas chamber. And irradiating, and depositing a metal thin film by the CVD reaction of the CVD material gas contained in the supplied mixed gas to connect the wirings. 10. The mixed gas is supplied locally into the mixed gas chamber by a nozzle to a portion where the metal film is deposited, according to claim 5, 6 or 7 or 8. The wiring correction method for an electronic circuit board according to 8 or 9. 11. The inside of the mixed gas chamber is moved to the outside of the mixed gas chamber by a fluid existing in a minute gap formed between the open end of the mixed gas chamber and the surface of the TFT substrate mounted on the stage. In the sealed state, a mixed gas in which a CVD material gas is mixed with a carrier gas is supplied into the mixed gas chamber, and laser light is present at the open end of the mixed gas chamber through a transparent portion of the mixed gas chamber. The metal thin film is deposited by the CVD reaction of the CVD material gas contained in the supplied mixed gas by condensing and irradiating it on at least the disconnection portion of the drain wiring on the surface of the TFT substrate to separate it from the adjacent pixel electrode A wiring correction method for a TFT substrate, characterized in that the drain wirings are connected to each other. 12. The TF according to claim 11, wherein the CVD material gas is a metal carbonyl material gas.
Wiring correction method for T-board. 13. A stage, on which an electronic circuit board is placed, which is installed on a base so as to be movable in at least the X and Y axis directions, and a surface of the electronic circuit board placed on the stage. A mixed gas chamber having an open end that seals the inside from the outside by allowing a fluid to exist in the minute gap formed in, and the objective lens is installed in the approximate center so that the exit end is directly exposed to the inside, A mixed gas supply means connected to the mixed gas chamber, for supplying a mixed gas in which a CVD material gas is mixed with a carrier gas into the mixed gas chamber, and an inside of the mixed gas chamber connected to the mixed gas chamber First exhausting means for exhausting the gas, second exhausting means for exhausting the atmosphere outside the mixed gas chamber, and light from the surface of the electronic circuit board mounted on the stage for the objective lens. Get through An observation optical system for observing the surface of the electronic circuit board, a laser light source for emitting a laser beam, and a laser beam emitted from the laser light source on the surface of the electronic circuit board placed on the stage through the objective lens. An electronic circuit board comprising: a laser beam irradiation optical system for condensing and irradiating, and depositing a metal thin film by a CVD reaction of a CVD material gas contained in the mixed gas supplied into the mixed gas chamber. Metal film forming apparatus. 14. A stage, on which an electronic circuit board is placed, which is installed on a base so as to be movable in at least the X and Y axis directions, and a surface of the electronic circuit board placed on the stage. A mixed gas chamber having an open end that seals the inside from the outside by allowing a carrier gas to flow in the minute gap formed in, and the objective lens is installed at approximately the center so that the emission end is directly exposed to the inside, A mixed gas supply unit connected to the mixed gas chamber, for supplying a mixed gas in which a CVD material gas is mixed with a carrier gas into the mixed gas chamber, and an inside of the mixed gas chamber connected to the mixed gas chamber First exhausting means for exhausting the gas, second exhausting means for exhausting the atmosphere outside the mixed gas chamber, and light from the surface of the electronic circuit board mounted on the stage for the objective lens. Through And an observation optical system for observing the surface of the electronic circuit board, a laser light source for emitting laser light, and a surface of the electronic circuit board mounted on the stage through the objective lens for the laser light emitted from the laser light source. And a laser light irradiation optical system for precipitating a metal thin film by a CVD reaction of a CVD material gas contained in the mixed gas supplied to the inside of the mixed gas chamber. Substrate metal film forming apparatus. 15. A stage, on which an electronic circuit board is placed, which is installed on a base so as to be movable in at least the X and Y axis directions, and a surface of the electronic circuit board placed on the stage. A mixed gas chamber having an open end that seals the inside from the outside by allowing a fluid to exist in the minute gap formed in, and the objective lens is installed in the substantial center so that the exit end is directly exposed to the inside, A mixed gas supply unit connected to the mixed gas chamber, for supplying a mixed gas in which a CVD material gas is mixed with a carrier gas into the mixed gas chamber, and an inside of the mixed gas chamber connected to the mixed gas chamber First exhausting means for exhausting the gas, second exhausting means for exhausting the atmosphere outside the mixed gas chamber, and light from the surface of the electronic circuit board mounted on the stage for the objective lens. Get through An observation optical system for observing the surface of the electronic circuit board, a CVD laser light source for emitting CVD laser light, a removal processing laser light source for emitting removal processing pulsed laser light, and an emission from the CVD laser light source. The laser light for CVD is focused and irradiated on the surface of the electronic circuit board placed on the stage through the objective lens, and the CVD reaction of the CVD material gas contained in the mixed gas supplied into the mixed gas chamber. A metal thin film is deposited by the laser light source for removal processing, and the pulsed laser light for removal processing emitted from the laser light source for removal processing is focused and irradiated on the surface of the electronic circuit board placed on the stage through the objective lens to form a metal thin film. A metal film forming apparatus for an electronic circuit board, characterized in that it is provided with a laser beam irradiation optical system for performing removal processing. 16. An electronic circuit board is placed between a stage movably installed on a base so as to be movable in at least X and Y axis directions, and a surface of the electronic circuit board placed on the stage. A mixed gas chamber having an open end that seals the inside from the outside by allowing a fluid to exist in the minute gap formed in, and the transmission part is installed approximately at the center so that the emission end is directly exposed to the inside; A mixed gas supply unit connected to the mixed gas chamber, for supplying a mixed gas in which a CVD material gas is mixed with a carrier gas into the mixed gas chamber, and an inside of the mixed gas chamber connected to the mixed gas chamber First exhaust means for exhausting the gas, second exhaust means for exhausting the atmosphere outside the mixed gas chamber, and light from the surface of the electronic circuit substrate mounted on the stage for the mixed gas. Installed in the room An observation optical system for observing the surface of the electronic circuit board obtained through an excess portion, a laser light source for CVD that emits a laser light for CVD, a laser light source for removal processing that emits a pulse laser light for removal processing, and the CVD light source. The CVD laser light emitted from the laser light source is condensed and radiated to the surface of the electronic circuit board placed on the stage through the transmitting portion, and the CVD contained in the mixed gas supplied into the mixed gas chamber is performed. A metal thin film is deposited by the CVD reaction of the material gas, and the pulse laser beam for removal processing emitted from the laser light source for removal processing is focused and irradiated onto the surface of the electronic circuit board mounted on the stage through the transparent portion. And a laser beam irradiation optical system for performing a removal process on the metal thin film. 17. The second evacuation means has an opening / closing part for carrying in / out the electronic circuit board, covers at least the stage and the mixed gas chamber, and is connected to the cover to remove gas in the cover. The metal film forming apparatus for an electronic circuit board according to claim 13, 14 or 15 or 16, further comprising an exhausting means for exhausting. 18. The second exhaust means has an opening / closing part for carrying in / out the electronic circuit board, and a device cover for covering at least the stage and the mixed gas chamber, and a device cover connected to the device cover. Exhaust means for exhausting gas, leak detecting means for detecting leak of the CVD material gas in the apparatus cover, and shutting off the supply of the mixed gas by the mixed gas supplying means when the leak is detected by the leak detecting means. 17. A metal film formation on an electronic circuit board according to claim 13, 14 or 15 or 16, further comprising: control means for controlling the exhaust means to exhaust the inside of the apparatus cover with a higher capacity than usual. apparatus.