JP2747314B2 - Laser processing method and apparatus - Google Patents

Description

The present invention relates to a method and an apparatus for selectively removing a part of the surface of a semiconductor device or selectively forming a film on the surface. The present invention relates to a laser processing method and an apparatus suitable for identifying a defective part or a cause partially existing in a prototype semiconductor device or for repairing the defective.

[Conventional technology]

2. Description of the Related Art In order to achieve higher performance and higher speed of semiconductor devices, miniaturization and higher integration of semiconductor devices have been performed. As a result, the development of semiconductor devices has become more difficult, leading to a longer development period. This situation indicates that a circuit manufacturing technique called cut-and-try is also required for LSI design. That is, a defective part on a chip that does not operate sufficiently with the conventional design is specified, the wiring existing in the part is cut, wiring is arbitrarily provided, the defective wiring is repaired, and provisional If a semiconductor device capable of obtaining a complete operation is manufactured, subsequent characteristic evaluation and design change can be performed quickly.

On the other hand, as a conventional technique, as described in pages 27 to 32 of the Semiconductor World, September 1987, for example, the passivation of the surface of an LSI chip by FIB (focused ion beam) is performed. After drilling holes in the interlayer insulating film to expose the wiring, CVD
A method of introducing a gas to form metal wiring by FIB is also introduced.

In addition, as a method for exposing the wiring by performing a hole in the passivation and the interlayer insulating film on the surface of the LSI chip, the photo-etching technology disclosed in JP-A-61-53732 and JP-A-61-177729 can be applied. .

Further, as a technique for forming a metal wiring, for example,
It is possible to apply film formation using light as shown in 60-211078.

[Problems to be solved by the invention]

In the first prior art, although fine drilling, fine wiring cutting, and fine wiring can be performed, accelerated ions directly hit a base material, so that damage due to the hit cannot be avoided. In addition, there remains a problem that the influence of the charge and the ionic species remain. This is a fatal problem in a region directly above or very close to an active region (for example, an emitter region of a bipolar transistor) of a semiconductor device.

There are second and third conventional techniques as techniques for solving the drawbacks of processing and wiring formation using such a focused ion beam. In this method, a workpiece placed in an etching gas atmosphere is etched by light such as a laser. In the fourth prior art, a substrate placed in a reaction gas atmosphere is irradiated with light such as a laser to decompose the reaction gas to form a conductive film. However, these prior arts take into account processing or miniaturization of film formation, and also consider that windows for introducing light into the reaction chamber are processed in the same manner or that films are formed on window surfaces. There has been a problem that no attention has been paid to prevent such a problem, and extremely fine processing and wiring formation cannot be continuously performed under the same conditions in order to cope with a semiconductor device with a higher density.

An object of the present invention is to perform etching processing such as drilling or cutting of wiring on a protective film or an interlayer insulating film of a semiconductor device which is a processing target substrate, and CVD film forming processing for adding an arbitrary wiring, Fine etching processing and CVD film forming processing made possible by placing the objective lens that focuses laser light close to the substrate to be processed and installing it in the processing chamber without affecting the performance of the equipment. The present invention provides a laser processing method and a laser processing apparatus which can be continuously performed under the same conditions.

[Means for solving the problem]

In order to achieve the above object, in the laser processing method of the present invention, a laser beam is irradiated while condensing on a fine spot by a high NA objective lens in a vacuum, while cooling a semiconductor device which is a workpiece. Exposing only the vicinity of a desired position requiring processing to a reaction gas, or adsorbing a processing gas to perform processing by a reaction induced by a laser beam only in a portion of a semiconductor device where a laser is focused and irradiated. Things.

Further, the laser processing apparatus of the present invention includes a laser oscillator, an objective lens for condensing the oscillated laser light on a fine spot, a reaction chamber having a laser transmission window, and a mounted sample (semiconductor device). A stage having a means for cooling the reactor, a vacuum pump for evacuating the reaction chamber to a high vacuum, a cylinder containing the reaction gas, and a nozzle for supplying the reaction gas into the reaction chamber. The objective lens installed in the room irradiates the sample surface while condensing it on a fine spot on the sample surface, and also supplies the reaction gas from the nozzle to the cooled sample surface while exposing only the parts that require processing to the reaction gas, or The reaction gas is adsorbed on the sample surface, and the reaction chamber is constantly evacuated to collect the laser beam without exposing the objective lens and the laser beam transmission window to the reaction gas. Only portions that are Isa in are those processed by the induced response was constructed as done by a laser beam.

[Action]

In the present invention, since the high NA objective lens is installed in the processing chamber, laser light can be finely focused, and by using an optical system that projects a rectangular aperture provided in the optical path onto the sample surface, Any size rectangular part can be processed.

In addition, a reaction gas (etching or CVD material gas) is flowed while the sample is cooled, gas molecules are adsorbed on the sample surface, and the laser is irradiated when the gas pressure is such that no reaction occurs on the surface other than the sample surface. No reaction occurs on the surface other than the sample surface, and the surface of the objective lens and the surface of the laser beam introduction window are not etched or the film is formed, and the function is not deteriorated.

In addition, by switching a plurality of gases while switching, or by providing a plurality of nozzles and sequentially processing while flowing an etching gas and a CVD material gas, a window is formed in an insulating film on a semiconductor device surface, a wiring is cut, and a wiring is cut. The connection between them can be performed by one device, and furthermore, since the process utilizes photoreaction, damage to the semiconductor device can be prevented.

Here, the nozzle 15 can be opened and closed by moving the needle 30 at the tip of the nozzle 15 back and forth so that the etching gas can be rapidly turned on and off, for example, as shown in FIG. For driving the needle 30, a magnet or a piezo element can be used.

〔Example〕

Hereinafter, the present invention will be described with reference to the drawings. FIG. 1 shows the overall configuration of a laser processing apparatus according to one embodiment of the present invention. A laser beam 2 oscillated from an Ar laser oscillator 1 is converted into a second harmonic 4 by a second harmonic generator 3, bent by a tiechroic mirror 5 in a direction perpendicular to the sample, and transmitted through a transmission window 6. The light is condensed by an objective lens 8 installed therein and is irradiated on a semiconductor device 10 which is a sample on a stage 9. The inside of the chamber 7 is evacuated by a vacuum pump 11 through an exhaust pipe 11a. The exhaust pipe 11a and the vacuum pump 11 constitute an exhaust unit. On the other hand, the gas to be processed was supplied to the surface of the sample 10 from a gas cylinder 12 by a pipe 13, a gas chamber 14 for maintaining a constant gas pressure, and a nozzle 15 as a spraying unit, and was exhausted by a vacuum pump 11 of an exhaust means. Thereafter, the gas is detoxified by the exhaust gas treatment device 16 and then discharged.
The gas chamber 14 and the nozzle 15 are a spray supply unit. The alignment and observation of the sample 10 are performed by the illumination light source 17, the eyepiece 18, the imaging lens 19, the TV camera 20, and the monitor 21. Here, the mounting table 9 is provided with a heat exchanger 22 for circulating and cooling the refrigerant, and the refrigerator 23 is configured to be able to compress and freeze the refrigeration.

An etching method according to an embodiment of the present invention will be described using the apparatus having the above-described configuration. With the sample 10 placed on the stage 9 as shown in FIG. 1, the inside of the chamber 7 is evacuated by a vacuum pump 11 such as a turbo molecular pump (here, an oil rotary pump for exhausting the secondary side). (Not shown) to maintain a vacuum degree of 1 × 10 ⁻⁶ Torr or less. The sample 10 was cooled by a heat exchanger 22 as cooling means provided in the mounting table 9 using liquid nitrogen as a refrigerant for about −100.
It has been cooled to below ℃. In this state, as shown in FIG. 3, an etching gas, for example, a chlorine gas is sprayed onto the sample 10 from the nozzle 15 as a spraying unit for a predetermined time. At this time, the sample
The etching gas pressure in the vicinity of 10 rises sharply, and falls sharply by closing the nozzle 15 in the spraying part. At this time, since the surface of the sample 10 is cooled to -100 ° C or less,
While the adsorption layer of the etching gas is formed, the surfaces of the objective lens 8 and the window 6 are kept at room temperature, so that even if the adsorption layer is formed, it is immediately removed. When the etching gas pressure becomes equal to or lower than a pressure that is activated by the laser beam 4 and causes etching, the sample 10 is irradiated with the laser beam 4. The etching gas that forms the adsorption layer is activated by the laser light 4 and reacts with the substance on the surface of the sample 10 to generate a vaporized reaction product. As a result, the etching proceeds. Naturally, the laser beam 4 stops before the etching gas is supplied from the nozzle 15 which is the spraying unit. By these series of operations, the etching proceeds only in the portion of the surface of the sample 10 irradiated with the laser beam 4 by an amount corresponding to the thickness of the adsorption layer. That is, by keeping constant the pressure and (concentration) of the etching gas blown out from the nozzle 15, the temperature of the sample 10, and the irradiation time of the laser beam 4, the etching amount in one operation shown in FIG. Can be set easily and accurately. On the other hand, the etching of the objective lens 8 and the laser transmission window 6 does not proceed, and the objective lens 8 and the laser transmission window 6 are not damaged and the transmittance of the laser beam is not reduced. Further, the objective lens 8 is installed in the chamber 7 and has a short working distance and a high NA.
Can be selected, so that fine processing can be performed.

Next, a processing method according to another embodiment of the present invention will be described with reference to FIG. In this embodiment, a CVD gas is used as a processing gas, and is sprayed from the nozzle 15 onto the sample 10 for a predetermined time as shown in FIG. As the CVD gas, for example, a vapor with an alkyl metal or a carbonyl metal is selected. At this time, the CVD gas pressure in the vicinity of the sample 10 rises sharply, and falls sharply by closing the nozzle 15. At this time, since the sample surface is cooled to -100 ° C. or lower, the adsorption layer of the CVD gas is formed, but the surfaces of the objective lens 8 and the window 6 are kept at room temperature.
The adsorbent layer is removed as soon as it is formed. The laser beam 4 is irradiated onto the sample 10 when the CVD gas pressure becomes equal to or lower than the pressure at which the laser beam 4 decomposes and deposits metal. The laser beam 4 decomposes the CVD gas forming the adsorption layer, and deposits a metal on the sample 10. When the reaction is completed, the laser beam 4 is stopped. By this one operation, the film thickness to be formed is determined by the thickness of the adsorption layer, and the CV blown out from the nozzle 15
By keeping the D gas pressure (concentration), the temperature of the sample 10 and the irradiation time of the laser beam 4 constant, the film thickness formed in one operation can be made constant, and the metal film thickness can be easily set. And can be performed accurately. Further, by moving the position where the laser beam 4 is irradiated, an arbitrary wiring can be formed. On the other hand, no metal is deposited on the surfaces of the objective lens 8 and the window 6, so that the laser transmittance does not decrease. The objective lens 8 is provided in the chamber 7
It is possible to select one having a short working distance and a large NA, so that fine wiring can be formed.

Next, a processing apparatus according to another embodiment will be described with reference to FIG. Laser light oscillated from Ar laser oscillator 41
42 is converted into a second harmonic 44 by a second harmonic generator 43, passes through a mirror 45 and a dichroic mirror 46, is shaped into an arbitrary rectangle by a rectangular slit 47,
The sample is projected and irradiated as a projection image of the rectangular slit 47 on the sample 10 by the objective lens 51 installed in the chamber 7 via the window 49 and the window 50. The inside of the chamber 7 is evacuated by a vacuum pump 11 through an exhaust pipe 11a. On the other hand, the processing gas flows from the gas cylinder 12 to the pipe 13
4.Supplied to the surface of sample 10 by nozzle 15, vacuum pump 11
After being evacuated, the gas is rendered harmless by the exhaust gas treatment device 16 and then discharged. In addition, alignment and observation of the sample 10 are performed by the illumination light source 17, the eyepiece 18, or the imaging lens 19, the TV camera 20,
This is performed by the monitor 21. Further, a light source 51 for positioning the rectangular slit 47 is provided. Further, a heat exchanger 22 for circulating and cooling the refrigerant is provided on the mounting table 9,
The refrigerator 23 compresses and freezes the refrigerant. An etching method using this apparatus will be described. The chamber 7 by the vacuum pump 11 in a state of mounting the sample 10 on the workpiece stage 9 shown in FIG. 4, for example, 1 × 10 ^-6
The degree of vacuum is kept below Torr. The sample 10 is cooled to about −100 ° C. or less by using a liquid nitrogen as a refrigerant by a heat exchanger 22 provided in the stage 9. In this state, an etching gas, for example, a chlorine gas is blown onto the sample 10 from the nozzle 15 for a predetermined time. At this time, the etching gas pressure near the sample 10 rises sharply, and falls sharply by closing the nozzle 15. At this time, since the surface of the sample 10 is cooled to −100 ° C. or less, an adsorption layer for the etching gas is formed, but the surface of the objective lens 8 and the window 6 is kept at room temperature, so that the adsorption layer is formed. However, it is immediately removed.

The light from the reference light source 50 is previously formed into a rectangle by the rectangular slit 47, and the projected image is projected onto the sample 10 and the position to be processed and the size are adjusted while observing with the eyepiece 18 or the monitor 21. . Thereafter, by irradiating the laser light 44, the laser light 44 is projected and irradiated at the same position and size as the projected image of the rectangular slit 47 by the reference light,
Only at the position where the laser light is irradiated, the etching gas forming the adsorption layer is activated, reacts with the substance on the surface of the sample 10, and generates a volatile reaction product, whereby the etching proceeds. The laser beam 44 is stopped before the etching by the adsorption layer is completed and before the introduction of the next etching gas is started. As described in the previous embodiment, a certain amount of etching proceeds by these series of operations, and the setting of the etching amount is easy and accurate. In addition, since a high NA objective lens can be selected, the processing of fine dimensions can be performed in the same manner. Further, since only the central portion of the laser row 44 is used, a substantially constant power density can be obtained in the irradiation area, and there is also an effect that the etch rate inside the irradiation area becomes uniform. In this embodiment, the etching has been described. However, it is the same as the previous embodiment that a metal film pattern can be formed by using an alkyl metal, metal carbonyl vapor or the like instead of an etching gas.

Here, in the apparatus shown in FIGS. 1 and 4, an etching gas or a CVD gas is used as a processing gas.
Although the case where one of the gases is used has been described, the reaction range is further expanded by providing a plurality of gas cylinders, pipes, and gas chambers and using a plurality of types of gases simultaneously or alternately. As one of application examples, a processing method using three kinds of gases will be described with reference to FIG. FIG. 5A shows a cross section of the semiconductor device. That is, the _first layer Al wiring on the Si substrate 60 via the SiO ₂ film 61
62, interlayer insulating film (SiO ₂ ) 63, second layer Al wiring 64, protective film (SiO ₂ )
₂ ) Consists of 65. This semiconductor device is mounted on the device shown in FIG. 1 or FIG. 4, and first, a fluorine-based etching gas, for example, CF ₄ or BF ₄ is blown out from the nozzle 15 to form an adsorption layer on the cooled semiconductor device. Then, a portion requiring wiring connection is irradiated with ultraviolet laser light 70, and the etching proceeds with the etching gas adsorbed. By repeating this operation, windows 66 and 67 and a hole 68 for cutting the wiring are formed as shown in FIG. 5 (b). Next, a chlorine-based etching gas, for example COL _4, Cl ₄ switched to such, SiO ₂ film 63,6
In the same manner as the holes 66, 67 and 68 are formed in 5, only the portions that need to be cut are irradiated with ultraviolet laser light 70, and a portion 69 of the Al wiring is cut as shown in FIG. 5 (c). Next, as shown in FIG. 5D, the gas is switched to a CVD gas such as metal carbonyl or alkyl metal vapor, and the windows 66 and 67 are sequentially irradiated with an ultraviolet laser 70 to bury the metal. Thereafter, the laser beam 70 is repeatedly irradiated and sequentially moved between the window portion 66 and the window portion 67 for the fifth time.
As shown in FIG. 7E, the jumper line 71 can be formed, and the correction is completed.

Here, the current process will be described with reference to FIG. FIG. 6 is a top view of a region including the cross section shown in FIG. 5, and is not shown because the interlayer insulating film 63 and the protective film 65 are transparent. FIG. 6A shows a state before correction. Recent
With the miniaturization of LSI, the pitch of Al wiring 62, 64 became smaller,
A wiring width of 0.8 μm and a space of 0.8 μm (so-called 0.8 μm process) have been adopted, and development of a 0.5 μm process has begun. In the case of the 0.5 μm process, the size of the connection holes 66 and 67 and the cut portion 69 needs to be 1 μm or less (this is not the case when there is no other wiring around). That is, in the apparatus shown in FIG. 1, the spot diameter is 1 μm or less, and in the apparatus shown in FIG.
It is necessary to collect light below. For this purpose, an objective lens having a small focal length (or working distance) and a large numerical aperture (NA) is placed inside the chamber 7 just above the sample 10. It is possible to employ an objective lens having a working distance of 0.5 mm or less, and since the numerical aperture NA is 0.6 to 0.9, it is easy to obtain a spot diameter of about 1 μm. Accordingly, when the connection holes 66 and 67 are formed, the adjacent wiring is not exposed, and unnecessary short circuit does not occur. Further, the cutting section 69 does not cut adjacent wiring. Similarly, the jumper wire 71 can be miniaturized, and correction with a high wiring density can be performed.

As described above, the surface of the objective lens and the window are not etched or a metal film is formed, and a constant laser beam transmittance is always maintained, so that fine etching and film formation can be performed by one apparatus.

Moreover, since all of the above processes are performed by a light reaction using a laser as a light source, it is possible to evaluate the characteristics of the semiconductor device and specify or repair a defective portion without damaging the semiconductor device.

Next, another embodiment will be described with reference to FIG.
1 or 4, an adsorbing layer 76 of tri-iso-butyl-aluminum vapor is formed on a substrate 75, and a portion where a film is to be formed is irradiated with ultraviolet ray 77 to form an aluminum pattern 78. To form Next, a tri-methyl-gallium adsorption layer 79 is formed, and a portion where a film is to be formed is irradiated with ultraviolet laser light 77 to form a laminated pattern 80 of aluminum and gallium. Further, an arsine gas adsorption layer 81 is formed, and a portion where a film is to be formed is irradiated with ultraviolet laser light 77 to form a laminated pattern 82 of aluminum, gallium, and arsenic. By this procedure, a laminated thin film pattern 82 having a thickness of one to several atomic layers can be directly formed. Further, by applying a heat treatment to the laminated pattern 82 on the substrate 75, a Ga-Al-As thin film pattern 83 can be formed. The thickness of the thin film pattern 83 can be easily and accurately controlled by repeating FIGS. 7 (a) to 7 (f).

Also, as shown in FIG. 8, the three kinds of mixed adsorption layers 86 can be formed on the substrate 85 by changing the mixing ratio of triisobutylaluminum, trimethylgallium, and arsine in a gas chamber in advance. By partially irradiating the ultraviolet laser 87 there, an ultra-thin Ga-Al-As thin film pattern 89 can be directly formed. This film thickness can be easily and accurately controlled by repeating the adsorption-laser irradiation.

In the apparatus of the present invention described above, liquid nitrogen is used as a means for cooling the sample 10, but the same effect can be obtained by installing a cooling unit by another liquefied gas or the Peltu effect. it is obvious.

Although the description has been given of the second harmonic of the Ar laser as the laser source, an ultraviolet light source such as an excimer laser, a YAG laser or the third and fourth harmonics of a glass laser can be used.

Further, in this embodiment, the processing gas is discharged from the nozzle in a pulsed manner, and the laser light is irradiated after the gas pressure in the objective lens or the laser light transmission window is sufficiently reduced. By adjusting the volume and the pumping speed of the vacuum pump, etching or
If the gas pressure can be maintained at such a level that the etching or CVD reaction does not proceed in the objective lens or window while the CVD reaction proceeds, the laser beam can be irradiated while constantly discharging a fixed amount of gas from the nozzle. . Even in this case, the objective lens and the window for transmitting laser light installed in the chamber are not damaged by etching, and the laser light transmittance does not change due to film formation, and a fine pattern can always be formed under constant conditions.

In FIG. 4, a complicated pattern can be formed at once by installing a photomask instead of the rectangular slit 47.

〔The invention's effect〕

According to the present invention, a reactive gas is exposed or adsorbed to a portion requiring processing while cooling a substrate to be processed, and then a reaction by a laser beam is induced. Therefore, an objective lens is installed in a processing chamber. Also, it is possible to always perform etching and CVD film formation processing under constant conditions without damaging the objective lens or the laser light introduction window or reducing the transmittance, and as a result, it is installed in the processing chamber. The effect that the laser beam is always focused on a fine spot by the objective lens thus formed and a fine pattern can be formed is exhibited. Further, according to the present invention, even if an objective lens is installed in the processing chamber in close proximity to the substrate to be processed, etching and CVD film forming processes can be always performed under constant conditions. By using an NA objective lens, it is possible to obtain a spot projected image of about 1 μm or less, and as a result, it is possible to form a fine pattern.

[Brief description of the drawings]

FIG. 1 is a configuration diagram of a laser processing apparatus according to one embodiment of the present invention,
FIG. 2 is an enlarged view of the tip of the nozzle, FIG. 3 is a view showing the relationship between the nozzle and the ON / OFF of the laser beam and the gas pressure, FIG. FIG. 5 and FIG. 6 are explanatory diagrams when the laser processing method of the present invention is applied to wiring correction of a semiconductor device, and FIG. 7 and FIG. 8 are each a description when a multi-element alloy film is formed. FIG. 1 ... laser oscillator, 6 ... window, 7 ... chamber, 8 ... objective lens, 9 ... stage, 15 ... nozzle
47: rectangular slit, 65: protective film, 71: jumper wire, 82: laminated film, 83: alloy film.

 ──────────────────────────────────────────────────続 き Continuing on the front page (72) Inventor Takashi Uemura 292 Yoshida-cho, Totsuka-ku, Yokohama-shi, Kanagawa Prefecture Inside Hitachi, Ltd.Production Technology Laboratory Co., Ltd. (72) Inventor Sadao Ohara 292 Yoshida-cho, Totsuka-ku, Yokohama-shi, Kanagawa Stock (56) References JP-A-60-41229 (JP, A) JP-A-64-9622 (JP, A) JP-A-62-243315 (JP, A) JP-A 55- 149643 (JP, A) JP-A-61-187238 (JP, A)

Claims (7)

(57) [Claims] In a state where a processing chamber is evacuated and a substrate to be processed installed in the processing chamber is further cooled, a reactive gas is supplied from a nozzle for a desired time to a desired level of the cooled substrate to be processed. The surface of the substrate to be processed is sprayed and stopped to form a reactive gas adsorption layer on a desired surface of the substrate to be processed. After the supply of the reactive gas is stopped, the reactivity existing around the substrate to be processed is reduced. When the gas is exhausted and the pressure in the processing chamber becomes equal to or lower than a pressure at which no reaction is induced, the laser light emitted from the laser light source is installed in the processing chamber through an introduction window installed in a wall constituting the processing chamber. The objective lens condenses and irradiates the adsorbed layer adsorbed on the desired surface portion of the substrate to give reaction energy, induces a reaction on the substrate to be processed, and reaches a desired portion of the substrate to be processed. Processing for Laser processing method according to claim Rukoto. 2. A laser processing method according to claim 1, wherein said reactive gas is used as an etching gas to perform etching on a desired portion of said substrate to be processed. 3. The laser processing method according to claim 1, wherein a CVD gas is used as the reactive gas, and a CVD process is performed on a desired portion of the substrate to be processed. 4. The process chamber is evacuated to a vacuum, and while the substrate to be processed placed in the process chamber is cooled, an etching gas is supplied from a nozzle to a desired surface of the cooled substrate for a desired time. An etching gas adsorption layer is formed on a desired surface portion of the substrate to be processed by spraying and supplying to the portion to be stopped, and after the supply of the etching gas is stopped, the etching gas existing around the substrate to be processed is exhausted. When the pressure in the processing chamber becomes equal to or lower than a pressure at which no reaction is induced, the laser light emitted from the laser light source is passed through an introduction window installed in a wall constituting the processing chamber by an objective lens installed in the processing chamber. The light is condensed and irradiated to the adsorption layer adsorbed on the desired surface portion of the substrate to give reaction energy, to induce a reaction on the substrate to be processed, and An etching process for etching the place, and evacuating the processing chamber, and further cooling the substrate to be processed installed in the processing chamber, the CVD gas was cooled from the nozzle for a desired time. By spraying and supplying to a desired surface portion of the substrate to be processed and stopping, an adsorption layer of a CVD gas is formed on the desired surface portion of the substrate to be processed.
CV existing around the target substrate after supply of VD gas is stopped
When the gas is exhausted and the pressure in the processing chamber becomes equal to or lower than a pressure at which no reaction is induced, the laser light emitted from the laser light source is installed in the processing chamber through an introduction window installed in a wall constituting the processing chamber. The objective lens is condensed and irradiated to the adsorbed layer adsorbed on the desired surface portion of the substrate to give a reaction energy to induce a reaction on the substrate to be processed to a desired portion of the substrate. A CVD process for performing a CVD process on the substrate, and performing the etching process and the CVD process on the process substrate in the process chamber. 5. The process chamber is evacuated to a vacuum, and a substrate to be processed placed in the process chamber is further cooled, and a first CVD gas is supplied from a nozzle for a desired time to the cooled substrate to be processed. A first CVD gas adsorption layer is formed on the desired surface portion of the processing target substrate by spraying and supplying it to the desired surface portion and then stopped. After the supply of the first CVD gas is stopped, the first processing target substrate is stopped. When the surrounding first CVD gas is exhausted and the pressure in the processing chamber becomes equal to or lower than a pressure at which no reaction is induced, a laser beam emitted from a laser light source is introduced into a wall provided in the processing chamber. The light is condensed by an objective lens installed in the processing chamber through the window and irradiated to an adsorption layer adsorbed on a desired surface portion of the substrate to give reaction energy to induce a reaction on the substrate to be processed. To the desired location on the substrate First to the first CVD process Te 1
In the state where the processing chamber is evacuated and the processing target substrate installed in the processing chamber is further cooled, a second CVD gas is supplied from the nozzle to the cooled processing target substrate for a desired time. Forming a second CVD gas adsorption layer on the desired surface portion of the substrate by spraying and stopping the surface of the substrate to be processed, and stopping the supply of the second CVD gas. The laser light emitted from the laser light source was installed on a wall constituting the processing chamber when the pressure in the processing chamber became equal to or lower than a pressure at which no reaction was induced when the second CVD gas present around the processing chamber was exhausted. Through the introduction window, light is condensed by the objective lens installed in the processing chamber, and is irradiated to the adsorption layer adsorbed on the desired surface portion of the substrate to give reaction energy to induce a reaction on the substrate to be processed. Desired location on the substrate to be processed And a second CVD process step of performing a second CVD process on the substrate, and laminating thin films of different materials by the first and second CVD processes on the substrate to be processed in the processing chamber. Characteristic laser processing method. 6. A substrate to be processed having a laser light source for emitting laser light and an introduction window for introducing a laser emitted from the laser light source on a wall, wherein the laser light introduced through the introduction window is installed inside. A processing chamber in which an objective lens for focusing light on the surface is installed, vacuum exhaust means connected to the processing chamber to evacuate the processing chamber, cooling means for cooling the substrate to be processed, A reactive gas adsorption layer is formed on a desired surface portion of the substrate to be processed by spraying and supplying a gas to a desired surface portion of the substrate to be processed cooled by the cooling means for a desired period of time. After stopping by spraying and supplying a reactive gas by the nozzle supply unit and the nozzle supply unit, the reactive gas present around the substrate to be processed is exhausted by the vacuum evacuation unit, and the pressure in the processing chamber reacts. But A pressure detecting means for detecting when the pressure becomes equal to or lower than a pressure at which the reaction does not occur, and a laser beam emitted from the laser light source when the pressure in the processing chamber becomes equal to or lower than a pressure at which no reaction is induced by the pressure detecting means. Through the objective lens, irradiates the adsorbed layer adsorbed on the desired surface portion of the substrate to be irradiated, and gives reaction energy to induce a reaction on the substrate to be processed, thereby causing a desired portion of the substrate to be processed. And a processing control means for performing processing on the laser processing apparatus. 7. A laser processing apparatus according to claim 6, wherein said nozzle supply means has a mechanism for switching between spraying supply of a reactive gas and stopping the supply at a tip portion.