JPS6490549A - Wiring method for metallic oxide film semiconductor type high breakdown-voltage driver - Google Patents

Wiring method for metallic oxide film semiconductor type high breakdown-voltage driver

Info

Publication number
JPS6490549A
JPS6490549A JP24883387A JP24883387A JPS6490549A JP S6490549 A JPS6490549 A JP S6490549A JP 24883387 A JP24883387 A JP 24883387A JP 24883387 A JP24883387 A JP 24883387A JP S6490549 A JPS6490549 A JP S6490549A
Authority
JP
Japan
Prior art keywords
high breakdown
oxide film
type high
voltage transistor
film semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP24883387A
Other languages
Japanese (ja)
Other versions
JP2712196B2 (en
Inventor
Takeshi Tamura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Epson Corp
Original Assignee
Seiko Epson Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Epson Corp filed Critical Seiko Epson Corp
Priority to JP62248833A priority Critical patent/JP2712196B2/en
Publication of JPS6490549A publication Critical patent/JPS6490549A/en
Application granted granted Critical
Publication of JP2712196B2 publication Critical patent/JP2712196B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Landscapes

  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)

Abstract

PURPOSE:To prevent the lowering of the breakdown-voltage of a high breakdown-voltage transistor by passing one part of a metallic wiring only on a gate for the high breakdown-voltage transistor, holding an oxide film. CONSTITUTION:A high breakdown-voltage transistor having offset gate structure is composed of a polysilicon gate 7, a drain 5, a source 6 and a low concentration ion implanting layer 8. Metallic wirings 10 are passed only on the gate 7, holding an oxide film 2. Consequently, the wirings 10 interrupt an effect on the high breakdown-voltage transistor. Accordingly, the lowering of the breakdown-voltage of the high breakdown-voltage transistor can be obviated.
JP62248833A 1987-10-01 1987-10-01 Semiconductor integrated device Expired - Lifetime JP2712196B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62248833A JP2712196B2 (en) 1987-10-01 1987-10-01 Semiconductor integrated device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62248833A JP2712196B2 (en) 1987-10-01 1987-10-01 Semiconductor integrated device

Publications (2)

Publication Number Publication Date
JPS6490549A true JPS6490549A (en) 1989-04-07
JP2712196B2 JP2712196B2 (en) 1998-02-10

Family

ID=17184101

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62248833A Expired - Lifetime JP2712196B2 (en) 1987-10-01 1987-10-01 Semiconductor integrated device

Country Status (1)

Country Link
JP (1) JP2712196B2 (en)

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5890755A (en) * 1981-11-25 1983-05-30 Nec Corp Semiconductor device
JPS58166773A (en) * 1982-03-09 1983-10-01 ア−ルシ−エ−　コ−ポレ−ション Floating gate memory device
JPS6051325A (en) * 1983-08-31 1985-03-22 Hitachi Ltd Semiconductor integrated circuit device
JPS6195545A (en) * 1984-10-17 1986-05-14 Hitachi Ltd Semiconductor ic device
JPS61251162A (en) * 1985-04-30 1986-11-08 Fujitsu Ltd Structure of semiconductor resistor device
JPS6290948A (en) * 1985-06-20 1987-04-25 Mitsubishi Electric Corp Semiconductor integrated circuit device
JPS63202941A (en) * 1987-02-18 1988-08-22 Nec Corp Wiring path for semiconductor device

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5890755A (en) * 1981-11-25 1983-05-30 Nec Corp Semiconductor device
JPS58166773A (en) * 1982-03-09 1983-10-01 ア−ルシ−エ−　コ−ポレ−ション Floating gate memory device
JPS6051325A (en) * 1983-08-31 1985-03-22 Hitachi Ltd Semiconductor integrated circuit device
JPS6195545A (en) * 1984-10-17 1986-05-14 Hitachi Ltd Semiconductor ic device
JPS61251162A (en) * 1985-04-30 1986-11-08 Fujitsu Ltd Structure of semiconductor resistor device
JPS6290948A (en) * 1985-06-20 1987-04-25 Mitsubishi Electric Corp Semiconductor integrated circuit device
JPS63202941A (en) * 1987-02-18 1988-08-22 Nec Corp Wiring path for semiconductor device

Also Published As

Publication number Publication date
JP2712196B2 (en) 1998-02-10

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Legal Events

Date Code Title Description
EXPY Cancellation because of completion of term