JPS648471B2 - - Google Patents
Info
- Publication number
- JPS648471B2 JPS648471B2 JP54019769A JP1976979A JPS648471B2 JP S648471 B2 JPS648471 B2 JP S648471B2 JP 54019769 A JP54019769 A JP 54019769A JP 1976979 A JP1976979 A JP 1976979A JP S648471 B2 JPS648471 B2 JP S648471B2
- Authority
- JP
- Japan
- Prior art keywords
- polysilicon
- oxide film
- doped
- phosphorus
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 53
- 229920005591 polysilicon Polymers 0.000 claims description 53
- 239000004065 semiconductor Substances 0.000 claims description 26
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 24
- 229910052698 phosphorus Inorganic materials 0.000 claims description 24
- 239000011574 phosphorus Substances 0.000 claims description 24
- 239000000758 substrate Substances 0.000 claims description 17
- 238000000034 method Methods 0.000 claims description 16
- 230000003647 oxidation Effects 0.000 claims description 15
- 238000007254 oxidation reaction Methods 0.000 claims description 15
- 238000004519 manufacturing process Methods 0.000 claims description 14
- 239000012535 impurity Substances 0.000 claims description 12
- 239000010410 layer Substances 0.000 description 38
- 229910044991 metal oxide Inorganic materials 0.000 description 8
- 150000004706 metal oxides Chemical class 0.000 description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
- 229910052710 silicon Inorganic materials 0.000 description 6
- 239000010703 silicon Substances 0.000 description 6
- 239000011229 interlayer Substances 0.000 description 5
- 238000009792 diffusion process Methods 0.000 description 4
- 239000013078 crystal Substances 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 2
- 229910052787 antimony Inorganic materials 0.000 description 2
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 2
- 229910052785 arsenic Inorganic materials 0.000 description 2
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 238000007429 general method Methods 0.000 description 1
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 239000007858 starting material Substances 0.000 description 1
Landscapes
- Semiconductor Memories (AREA)
- Semiconductor Integrated Circuits (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1976979A JPS55113324A (en) | 1979-02-23 | 1979-02-23 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1976979A JPS55113324A (en) | 1979-02-23 | 1979-02-23 | Manufacture of semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS55113324A JPS55113324A (en) | 1980-09-01 |
| JPS648471B2 true JPS648471B2 (enrdf_load_stackoverflow) | 1989-02-14 |
Family
ID=12008532
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1976979A Granted JPS55113324A (en) | 1979-02-23 | 1979-02-23 | Manufacture of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS55113324A (enrdf_load_stackoverflow) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58100451A (ja) * | 1981-12-10 | 1983-06-15 | Oki Electric Ind Co Ltd | 半導体装置の製造方法 |
| JPS61198664A (ja) * | 1985-02-27 | 1986-09-03 | Sharp Corp | 半導体装置の製造方法 |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4915373A (enrdf_load_stackoverflow) * | 1972-05-18 | 1974-02-09 |
-
1979
- 1979-02-23 JP JP1976979A patent/JPS55113324A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS55113324A (en) | 1980-09-01 |
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