JPS6336143B2 - - Google Patents
Info
- Publication number
- JPS6336143B2 JPS6336143B2 JP54161542A JP16154279A JPS6336143B2 JP S6336143 B2 JPS6336143 B2 JP S6336143B2 JP 54161542 A JP54161542 A JP 54161542A JP 16154279 A JP16154279 A JP 16154279A JP S6336143 B2 JPS6336143 B2 JP S6336143B2
- Authority
- JP
- Japan
- Prior art keywords
- layer
- oxide film
- gate
- cell plate
- conductivity type
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000000034 method Methods 0.000 claims description 16
- 239000004065 semiconductor Substances 0.000 claims description 13
- 239000012535 impurity Substances 0.000 claims description 8
- 238000004519 manufacturing process Methods 0.000 claims description 7
- 239000004020 conductor Substances 0.000 claims description 6
- 239000003990 capacitor Substances 0.000 claims description 5
- 238000003860 storage Methods 0.000 claims description 4
- 230000001590 oxidative effect Effects 0.000 claims description 3
- 238000005530 etching Methods 0.000 claims description 2
- 239000000758 substrate Substances 0.000 description 13
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 10
- 230000003647 oxidation Effects 0.000 description 8
- 238000007254 oxidation reaction Methods 0.000 description 8
- 230000015572 biosynthetic process Effects 0.000 description 6
- 229910004298 SiO 2 Inorganic materials 0.000 description 5
- 229920002120 photoresistant polymer Polymers 0.000 description 5
- 238000000151 deposition Methods 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- 229910007991 Si-N Inorganic materials 0.000 description 1
- 229910006294 Si—N Inorganic materials 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 229920000728 polyester Polymers 0.000 description 1
- 238000005979 thermal decomposition reaction Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
Landscapes
- Semiconductor Memories (AREA)
- Semiconductor Integrated Circuits (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16154279A JPS5685853A (en) | 1979-12-14 | 1979-12-14 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16154279A JPS5685853A (en) | 1979-12-14 | 1979-12-14 | Manufacture of semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5685853A JPS5685853A (en) | 1981-07-13 |
| JPS6336143B2 true JPS6336143B2 (enrdf_load_stackoverflow) | 1988-07-19 |
Family
ID=15737074
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP16154279A Granted JPS5685853A (en) | 1979-12-14 | 1979-12-14 | Manufacture of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5685853A (enrdf_load_stackoverflow) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59121866A (ja) * | 1982-12-28 | 1984-07-14 | Oki Electric Ind Co Ltd | 半導体メモリ素子の製造方法 |
| US4826779A (en) * | 1986-10-24 | 1989-05-02 | Teledyne Industries, Inc. | Integrated capacitor and method of fabricating same |
-
1979
- 1979-12-14 JP JP16154279A patent/JPS5685853A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5685853A (en) | 1981-07-13 |
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