JPS5685853A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPS5685853A JPS5685853A JP16154279A JP16154279A JPS5685853A JP S5685853 A JPS5685853 A JP S5685853A JP 16154279 A JP16154279 A JP 16154279A JP 16154279 A JP16154279 A JP 16154279A JP S5685853 A JPS5685853 A JP S5685853A
- Authority
- JP
- Japan
- Prior art keywords
- film
- layer
- gate
- covered
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title abstract 3
- 238000004519 manufacturing process Methods 0.000 title abstract 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 12
- 229910052681 coesite Inorganic materials 0.000 abstract 6
- 229910052906 cristobalite Inorganic materials 0.000 abstract 6
- 239000010410 layer Substances 0.000 abstract 6
- 239000000377 silicon dioxide Substances 0.000 abstract 6
- 235000012239 silicon dioxide Nutrition 0.000 abstract 6
- 229910052682 stishovite Inorganic materials 0.000 abstract 6
- 229910052905 tridymite Inorganic materials 0.000 abstract 6
- 239000012535 impurity Substances 0.000 abstract 4
- 239000000758 substrate Substances 0.000 abstract 4
- 150000002500 ions Chemical class 0.000 abstract 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract 1
- 230000000717 retained effect Effects 0.000 abstract 1
- 239000002344 surface layer Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
Landscapes
- Semiconductor Memories (AREA)
- Semiconductor Integrated Circuits (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16154279A JPS5685853A (en) | 1979-12-14 | 1979-12-14 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16154279A JPS5685853A (en) | 1979-12-14 | 1979-12-14 | Manufacture of semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5685853A true JPS5685853A (en) | 1981-07-13 |
| JPS6336143B2 JPS6336143B2 (enrdf_load_stackoverflow) | 1988-07-19 |
Family
ID=15737074
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP16154279A Granted JPS5685853A (en) | 1979-12-14 | 1979-12-14 | Manufacture of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5685853A (enrdf_load_stackoverflow) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59121866A (ja) * | 1982-12-28 | 1984-07-14 | Oki Electric Ind Co Ltd | 半導体メモリ素子の製造方法 |
| US4826779A (en) * | 1986-10-24 | 1989-05-02 | Teledyne Industries, Inc. | Integrated capacitor and method of fabricating same |
-
1979
- 1979-12-14 JP JP16154279A patent/JPS5685853A/ja active Granted
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59121866A (ja) * | 1982-12-28 | 1984-07-14 | Oki Electric Ind Co Ltd | 半導体メモリ素子の製造方法 |
| US4826779A (en) * | 1986-10-24 | 1989-05-02 | Teledyne Industries, Inc. | Integrated capacitor and method of fabricating same |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6336143B2 (enrdf_load_stackoverflow) | 1988-07-19 |
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