JPS6476756A - Semiconductor integrated circuit device and manufacture thereof - Google Patents

Semiconductor integrated circuit device and manufacture thereof

Info

Publication number
JPS6476756A
JPS6476756A JP23231087A JP23231087A JPS6476756A JP S6476756 A JPS6476756 A JP S6476756A JP 23231087 A JP23231087 A JP 23231087A JP 23231087 A JP23231087 A JP 23231087A JP S6476756 A JPS6476756 A JP S6476756A
Authority
JP
Japan
Prior art keywords
recessed part
region
forming
semiconductor region
contact
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP23231087A
Other languages
English (en)
Other versions
JPH073870B2 (ja
Inventor
Satoshi Shida
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP62232310A priority Critical patent/JPH073870B2/ja
Publication of JPS6476756A publication Critical patent/JPS6476756A/ja
Publication of JPH073870B2 publication Critical patent/JPH073870B2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Bipolar Transistors (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
JP62232310A 1987-09-18 1987-09-18 半導体集積回路装置の製造方法 Expired - Lifetime JPH073870B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62232310A JPH073870B2 (ja) 1987-09-18 1987-09-18 半導体集積回路装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62232310A JPH073870B2 (ja) 1987-09-18 1987-09-18 半導体集積回路装置の製造方法

Publications (2)

Publication Number Publication Date
JPS6476756A true JPS6476756A (en) 1989-03-22
JPH073870B2 JPH073870B2 (ja) 1995-01-18

Family

ID=16937199

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62232310A Expired - Lifetime JPH073870B2 (ja) 1987-09-18 1987-09-18 半導体集積回路装置の製造方法

Country Status (1)

Country Link
JP (1) JPH073870B2 (ja)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0595087A (ja) * 1991-10-01 1993-04-16 Nec Corp 半導体装置の製造方法
US6265747B1 (en) 1997-06-27 2001-07-24 Nec Corporation Semiconductor device having OHMIC connection that utilizes peak impurity concentration region
JP2017085184A (ja) * 2017-02-14 2017-05-18 キヤノン株式会社 ショットキーバリアダイオード及びそれを用いた装置
CN115411099A (zh) * 2022-09-28 2022-11-29 桑德斯微电子器件（南京）有限公司 一种纯铂金势垒肖特基二极管的制备方法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS562671A (en) * 1979-06-22 1981-01-12 Nissan Motor Co Ltd Manufacture of semiconductor diaphragm
JPS58216453A (ja) * 1982-06-09 1983-12-16 Fujitsu Ltd 半導体装置
JPS6010754A (ja) * 1983-06-30 1985-01-19 Toshiba Corp 半導体装置及びその製造方法
JPS61139063A (ja) * 1984-12-11 1986-06-26 Fujitsu Ltd 半導体装置およびその製造方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS562671A (en) * 1979-06-22 1981-01-12 Nissan Motor Co Ltd Manufacture of semiconductor diaphragm
JPS58216453A (ja) * 1982-06-09 1983-12-16 Fujitsu Ltd 半導体装置
JPS6010754A (ja) * 1983-06-30 1985-01-19 Toshiba Corp 半導体装置及びその製造方法
JPS61139063A (ja) * 1984-12-11 1986-06-26 Fujitsu Ltd 半導体装置およびその製造方法

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0595087A (ja) * 1991-10-01 1993-04-16 Nec Corp 半導体装置の製造方法
US6265747B1 (en) 1997-06-27 2001-07-24 Nec Corporation Semiconductor device having OHMIC connection that utilizes peak impurity concentration region
US6667202B2 (en) 1997-06-27 2003-12-23 Nec Electronics Corporation Semiconductor device and method for making the same
JP2017085184A (ja) * 2017-02-14 2017-05-18 キヤノン株式会社 ショットキーバリアダイオード及びそれを用いた装置
CN115411099A (zh) * 2022-09-28 2022-11-29 桑德斯微电子器件（南京）有限公司 一种纯铂金势垒肖特基二极管的制备方法

Also Published As

Publication number Publication date
JPH073870B2 (ja) 1995-01-18

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