JPS57187950A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS57187950A
JPS57187950A JP7250181A JP7250181A JPS57187950A JP S57187950 A JPS57187950 A JP S57187950A JP 7250181 A JP7250181 A JP 7250181A JP 7250181 A JP7250181 A JP 7250181A JP S57187950 A JPS57187950 A JP S57187950A
Authority
JP
Japan
Prior art keywords
region
type
insulation
impurity
electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP7250181A
Other languages
Japanese (ja)
Inventor
Sadayuki Hamada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP7250181A priority Critical patent/JPS57187950A/en
Publication of JPS57187950A publication Critical patent/JPS57187950A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/761—PN junctions

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Bipolar Transistors (AREA)
  • Element Separation (AREA)
  • Semiconductor Integrated Circuits (AREA)

Abstract

PURPOSE:To obtain information on various parameters of an insulation region that has not been obtained before, and to detect such deficiency as latch phenomenon of an IC, by forming a layer resistance monitor element of insulation separation region with impurity and insulation separation regions. CONSTITUTION:An N type buried-in impurity region 2 is formed on a P type semiconductor substrate 1. An insulation region 4 is formed on an epitaxial wafer where an epitaxial layer 3 is grown. A P type diffusion region 5 is formed. An N type impurity diffusion region 6 is formed to form an emitter of NPN transistor simultaneously. An aluminum electrode 8 is established after opening a necessary electrode window 7. A monitor element consists of the insulation region 4, N type impurity region and aluminum electrode 8. Another electrode is the P type substrate.
JP7250181A 1981-05-14 1981-05-14 Semiconductor device Pending JPS57187950A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7250181A JPS57187950A (en) 1981-05-14 1981-05-14 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7250181A JPS57187950A (en) 1981-05-14 1981-05-14 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS57187950A true JPS57187950A (en) 1982-11-18

Family

ID=13491142

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7250181A Pending JPS57187950A (en) 1981-05-14 1981-05-14 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS57187950A (en)

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