JPS5563841A - Manufacture of semiconductor integrated circuit - Google Patents
Manufacture of semiconductor integrated circuitInfo
- Publication number
- JPS5563841A JPS5563841A JP13751378A JP13751378A JPS5563841A JP S5563841 A JPS5563841 A JP S5563841A JP 13751378 A JP13751378 A JP 13751378A JP 13751378 A JP13751378 A JP 13751378A JP S5563841 A JPS5563841 A JP S5563841A
- Authority
- JP
- Japan
- Prior art keywords
- film
- oxide film
- single crystal
- layer
- porous
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Element Separation (AREA)
Abstract
PURPOSE: To fabricate a highly reliable IC at low cost by selectively providing anodic oxidation and epitaxial growth on a p-type single crystal Si subatrate and performing element-to-element separation.
CONSTITUTION: An element mounting region 4 is selectively designated through the etching for a p-type single crystal Si 1. An n+-layer 5 is formed on the exposed surface by diffusing Sb and the resulting surface is covered with an oxide film 6. The oxide film 6 after an acid-resistant insulation film 3 and the oxide film 2 have been removed is used to selectively anordize the substrate 1, and then a porous Si- layer is formed on the surface region encompassing the exposed region 4 and a porous Si oxide film 8 is formed by thermal oxidation. After removal of the oxide layer 6, an epitaxial film with desired resistivity and thickness is grown. After simultaneously forming a single crystal Si film 10 and a poly crystal Si film 9, only the film 9 is removed, and then an element D is formed on a single crystal Si film 10 by means of conventional planer method. Like these, with the porous Si oxide film 8 utilized as separation layer, highly reliable ICs can be manufactured at cheaper production cost without resort to diffusion treatment extending over a long period at high temperatures.
COPYRIGHT: (C)1980,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP13751378A JPS5563841A (en) | 1978-11-08 | 1978-11-08 | Manufacture of semiconductor integrated circuit |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP13751378A JPS5563841A (en) | 1978-11-08 | 1978-11-08 | Manufacture of semiconductor integrated circuit |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5563841A true JPS5563841A (en) | 1980-05-14 |
Family
ID=15200417
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP13751378A Pending JPS5563841A (en) | 1978-11-08 | 1978-11-08 | Manufacture of semiconductor integrated circuit |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5563841A (en) |
-
1978
- 1978-11-08 JP JP13751378A patent/JPS5563841A/en active Pending
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