JPS6469029A - Semiconductor integrated circuit - Google Patents

Semiconductor integrated circuit

Info

Publication number
JPS6469029A
JPS6469029A JP22761487A JP22761487A JPS6469029A JP S6469029 A JPS6469029 A JP S6469029A JP 22761487 A JP22761487 A JP 22761487A JP 22761487 A JP22761487 A JP 22761487A JP S6469029 A JPS6469029 A JP S6469029A
Authority
JP
Japan
Prior art keywords
polycrystalline silicon
silicon layer
section
layer
crossing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP22761487A
Other languages
Japanese (ja)
Inventor
Junji Kamioka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP22761487A priority Critical patent/JPS6469029A/en
Publication of JPS6469029A publication Critical patent/JPS6469029A/en
Pending legal-status Critical Current

Links

Landscapes

  • Design And Manufacture Of Integrated Circuits (AREA)
  • Semiconductor Memories (AREA)
  • Laser Beam Processing (AREA)
  • Techniques For Improving Reliability Of Storages (AREA)
  • Read Only Memory (AREA)

Abstract

PURPOSE:To prevent the generation of a short circuit by forming a polycrystalline silicon layer, crossing the stepped section of an insulating film. CONSTITUTION:A polycrystalline silicon layer 10 shapes a fuse section in specified width and length, crossing a stepped section formed by a polycrystalline silicon layer 9 and an inter-layer insulating film 3, and a pair of electrodes consisting of Al films 5-1, 5-2 are ohmic-connected at both ends of the layer 10. When a section between the Al films 5-1, 5-2 is opened, the polycrystalline silicon layer 10 is fusion-cut by laser beams in a section passing on the polycrystalline silicon layer 9. Accordingly, silicon melted at the time of cutting by laser beams is not scattered uniformly, and probability in which a short circuit is generated due to the residue of melted silicon is lowered by the effect of the stepped section.
JP22761487A 1987-09-10 1987-09-10 Semiconductor integrated circuit Pending JPS6469029A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP22761487A JPS6469029A (en) 1987-09-10 1987-09-10 Semiconductor integrated circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP22761487A JPS6469029A (en) 1987-09-10 1987-09-10 Semiconductor integrated circuit

Publications (1)

Publication Number Publication Date
JPS6469029A true JPS6469029A (en) 1989-03-15

Family

ID=16863694

Family Applications (1)

Application Number Title Priority Date Filing Date
JP22761487A Pending JPS6469029A (en) 1987-09-10 1987-09-10 Semiconductor integrated circuit

Country Status (1)

Country Link
JP (1) JPS6469029A (en)

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52149482A (en) * 1976-06-04 1977-12-12 Bosch Gmbh Robert Device for isolating conductive path on ic
JPS59163859A (en) * 1983-03-09 1984-09-14 Fujitsu Ltd Manufacture of semiconductor device
JPS6084837A (en) * 1983-10-17 1985-05-14 Hitachi Ltd Semiconductor integrated circuit device
JPS60136333A (en) * 1983-12-26 1985-07-19 Oki Electric Ind Co Ltd Laser fuse device
JPS63246844A (en) * 1987-04-02 1988-10-13 Matsushita Electronics Corp Semiconductor fuse

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52149482A (en) * 1976-06-04 1977-12-12 Bosch Gmbh Robert Device for isolating conductive path on ic
JPS59163859A (en) * 1983-03-09 1984-09-14 Fujitsu Ltd Manufacture of semiconductor device
JPS6084837A (en) * 1983-10-17 1985-05-14 Hitachi Ltd Semiconductor integrated circuit device
JPS60136333A (en) * 1983-12-26 1985-07-19 Oki Electric Ind Co Ltd Laser fuse device
JPS63246844A (en) * 1987-04-02 1988-10-13 Matsushita Electronics Corp Semiconductor fuse

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