JPS5772367A - Fusing type semiconductor device - Google Patents

Fusing type semiconductor device

Info

Publication number
JPS5772367A
JPS5772367A JP14835980A JP14835980A JPS5772367A JP S5772367 A JPS5772367 A JP S5772367A JP 14835980 A JP14835980 A JP 14835980A JP 14835980 A JP14835980 A JP 14835980A JP S5772367 A JPS5772367 A JP S5772367A
Authority
JP
Japan
Prior art keywords
fuse
resistance
metallic silicide
fusing type
semiconductor device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP14835980A
Other languages
Japanese (ja)
Other versions
JPS6140142B2 (en
Inventor
Satoshi Shinozaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP14835980A priority Critical patent/JPS5772367A/en
Publication of JPS5772367A publication Critical patent/JPS5772367A/en
Publication of JPS6140142B2 publication Critical patent/JPS6140142B2/ja
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
    • G11C17/14—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM
    • G11C17/16—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM using electrically-fusible links

Landscapes

  • Fuses (AREA)
  • Read Only Memory (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)
  • Semiconductor Memories (AREA)

Abstract

PURPOSE:To prevent the remarkable drop of fuse resistance by partially changing silicon composing fuse into a metallic silicide in a fusing type PROM cell. CONSTITUTION:The pad sections 31 of the fuse are turned into the metallic silicide, contacting property with wiring metal is improved and resistance value at the pad sections 31 is lowered. The resistance value of the fuse does not drop remarkably because the resistance of a fuse section 32 is mainly effective. Accordingly, the small fuse having high reliability can be obtained by changing one part of the fuse into the metallic silicide.
JP14835980A 1980-10-24 1980-10-24 Fusing type semiconductor device Granted JPS5772367A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14835980A JPS5772367A (en) 1980-10-24 1980-10-24 Fusing type semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14835980A JPS5772367A (en) 1980-10-24 1980-10-24 Fusing type semiconductor device

Publications (2)

Publication Number Publication Date
JPS5772367A true JPS5772367A (en) 1982-05-06
JPS6140142B2 JPS6140142B2 (en) 1986-09-08

Family

ID=15450987

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14835980A Granted JPS5772367A (en) 1980-10-24 1980-10-24 Fusing type semiconductor device

Country Status (1)

Country Link
JP (1) JPS5772367A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58202548A (en) * 1982-05-21 1983-11-25 Hitachi Ltd Fuse cutting semiconductor device
JPS59146969U (en) * 1983-03-23 1984-10-01 日本電気株式会社 semiconductor equipment
JPH01122451A (en) * 1987-11-06 1989-05-15 Seiko Instr & Electron Ltd Manufacture of thermal head
US5331195A (en) * 1991-06-21 1994-07-19 Nippon Steel Corporation Fuse construction of a semiconductor device

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58202548A (en) * 1982-05-21 1983-11-25 Hitachi Ltd Fuse cutting semiconductor device
JPS59146969U (en) * 1983-03-23 1984-10-01 日本電気株式会社 semiconductor equipment
JPH0132363Y2 (en) * 1983-03-23 1989-10-03
JPH01122451A (en) * 1987-11-06 1989-05-15 Seiko Instr & Electron Ltd Manufacture of thermal head
US5331195A (en) * 1991-06-21 1994-07-19 Nippon Steel Corporation Fuse construction of a semiconductor device

Also Published As

Publication number Publication date
JPS6140142B2 (en) 1986-09-08

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