JPS6489338A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS6489338A JPS6489338A JP12164488A JP12164488A JPS6489338A JP S6489338 A JPS6489338 A JP S6489338A JP 12164488 A JP12164488 A JP 12164488A JP 12164488 A JP12164488 A JP 12164488A JP S6489338 A JPS6489338 A JP S6489338A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor device
- conduction elements
- fet
- constituting
- blown out
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/525—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body with adaptable interconnections
- H01L23/5256—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body with adaptable interconnections comprising fuses, i.e. connections having their state changed from conductive to non-conductive
- H01L23/5258—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body with adaptable interconnections comprising fuses, i.e. connections having their state changed from conductive to non-conductive the change of state resulting from the use of an external beam, e.g. laser beam or ion beam
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Design And Manufacture Of Integrated Circuits (AREA)
- Logic Circuits (AREA)
- Read Only Memory (AREA)
- Semiconductor Memories (AREA)
Abstract
PURPOSE: To optimize the operational parameters of a device by constituting a semiconductor device of first and second transistors and first through fourth conduction elements for connecting them and making desired conduction elements of laser programmable fuses which can be blown out. CONSTITUTION: When the size of an MESFET 40A constituting a semiconductor device increases, an external current increases to raise the operating speed. Consequently, a desired operating rate is set for a predetermined power level by selecting the size of the FET 40A appropriately. Alternatively, the characteristics are corrected by connecting a larger number of secondary elements if the threshold voltage of the FET 40A is high at the time of first inspection and thereby the operating speed of the circuit is reduced. Because of this, at least two of first to fourth conduction elements are formed of laser programmable fuses 80 which are blown out by irradiating laser so that characteristics satisfying a purpose are exhibited.
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US5209887A | 1987-05-19 | 1987-05-19 |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS6489338A true JPS6489338A (en) | 1989-04-03 |
Family
ID=21975461
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP12164488A Pending JPS6489338A (en) | 1987-05-19 | 1988-05-18 | Semiconductor device |
Country Status (3)
Country | Link |
---|---|
JP (1) | JPS6489338A (en) |
DE (1) | DE3817114A1 (en) |
GB (1) | GB2206730A (en) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH02189607A (en) * | 1989-01-18 | 1990-07-25 | Seiko Instr Inc | Voltage regulator |
DE69411368T2 (en) * | 1994-05-30 | 1998-10-22 | St Microelectronics Srl | Circuit for selecting design options in an integrated circuit |
US6100747A (en) * | 1994-05-30 | 2000-08-08 | Stmicroelectronics, S.R.L. | Device for selecting design options in an integrated circuit |
DE69712302T2 (en) | 1996-12-31 | 2002-10-24 | Stmicroelectronics, Inc. | Structure and component for selecting design options in an integrated circuit |
ITMI20110844A1 (en) * | 2011-05-13 | 2012-11-14 | St Microelectronics Srl | ELECTRONIC TRIMMING CIRCUIT |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CA997868A (en) * | 1972-12-20 | 1976-09-28 | David J. Fullagar | Digital adjustment of linear circuits |
US4306246A (en) * | 1976-09-29 | 1981-12-15 | Motorola, Inc. | Method for trimming active semiconductor devices |
US4238839A (en) * | 1979-04-19 | 1980-12-09 | National Semiconductor Corporation | Laser programmable read only memory |
US4412241A (en) * | 1980-11-21 | 1983-10-25 | National Semiconductor Corporation | Multiple trim structure |
JPS5846174B2 (en) * | 1981-03-03 | 1983-10-14 | 株式会社東芝 | semiconductor integrated circuit |
-
1988
- 1988-05-18 JP JP12164488A patent/JPS6489338A/en active Pending
- 1988-05-18 GB GB8811703A patent/GB2206730A/en not_active Withdrawn
- 1988-05-19 DE DE19883817114 patent/DE3817114A1/en not_active Withdrawn
Also Published As
Publication number | Publication date |
---|---|
GB8811703D0 (en) | 1988-06-22 |
GB2206730A (en) | 1989-01-11 |
DE3817114A1 (en) | 1988-12-15 |
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