JPH02189607A - Voltage regulator - Google Patents
Voltage regulatorInfo
- Publication number
- JPH02189607A JPH02189607A JP1009557A JP955789A JPH02189607A JP H02189607 A JPH02189607 A JP H02189607A JP 1009557 A JP1009557 A JP 1009557A JP 955789 A JP955789 A JP 955789A JP H02189607 A JPH02189607 A JP H02189607A
- Authority
- JP
- Japan
- Prior art keywords
- resistor
- value
- link members
- resistance
- resistors
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract description 11
- 229910052782 aluminium Inorganic materials 0.000 abstract description 11
- 238000000034 method Methods 0.000 abstract description 10
- 239000004411 aluminium Substances 0.000 abstract 1
- 238000010586 diagram Methods 0.000 description 12
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 4
- 229920005591 polysilicon Polymers 0.000 description 4
- 238000005530 etching Methods 0.000 description 3
- 238000013459 approach Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
Classifications
-
- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
- G05F1/00—Automatic systems in which deviations of an electric quantity from one or more predetermined values are detected at the output of the system and fed back to a device within the system to restore the detected quantity to its predetermined value or values, i.e. retroactive systems
- G05F1/10—Regulating voltage or current
- G05F1/46—Regulating voltage or current wherein the variable actually regulated by the final control device is dc
- G05F1/56—Regulating voltage or current wherein the variable actually regulated by the final control device is dc using semiconductor devices in series with the load as final control devices
-
- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
- G05F1/00—Automatic systems in which deviations of an electric quantity from one or more predetermined values are detected at the output of the system and fed back to a device within the system to restore the detected quantity to its predetermined value or values, i.e. retroactive systems
- G05F1/10—Regulating voltage or current
- G05F1/625—Regulating voltage or current wherein it is irrelevant whether the variable actually regulated is ac or dc
- G05F1/63—Regulating voltage or current wherein it is irrelevant whether the variable actually regulated is ac or dc using variable impedances in series with the load as final control devices
- G05F1/648—Regulating voltage or current wherein it is irrelevant whether the variable actually regulated is ac or dc using variable impedances in series with the load as final control devices being plural resistors among which a selection is made
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は、ＣＭＯＳモノリシックＩＣ化された歩留りの
高いボルテージ・レギュレーターに関するものである。DETAILED DESCRIPTION OF THE INVENTION [Industrial Application Field] The present invention relates to a high-yield voltage regulator that is made into a CMOS monolithic IC.
本発明は、ボルテージ・レギュレーターの出力電圧を決
める抵抗にポリシリコン抵抗もしくは、アルミ配線によ
って形成されたリンク部材を付加し、そのリンク部材を
レーザー光線によって、切断することで、歩留りの高い
ボルテージ・レギュレーターを提供するものである。The present invention provides a high-yield voltage regulator by adding a link member made of polysilicon resistor or aluminum wiring to the resistor that determines the output voltage of the voltage regulator, and cutting the link member with a laser beam. This is what we provide.
従来のボルテージ・レギュレーターの回路図を第２図に
示す、基準電圧回路１と抵抗Ｒ１とｈから成る抵抗群２
から取り出された電圧は、誤差増幅器３で比較され出力
トランジスタ４を制御する。The circuit diagram of a conventional voltage regulator is shown in Fig. 2, which includes a reference voltage circuit 1 and a resistor group 2 consisting of resistors R1 and h.
The voltages taken out from the circuit are compared in an error amplifier 3 to control an output transistor 4.
つまり、抵抗群２から取り出された電圧が、基準電圧よ
り小さければ、誤差増幅器３の出力は低くなり、出力ト
ランジスタ４を強くバイアスし、逆に抵抗群２から取り
出された電圧が基準電圧より高ければトランジスタ４を
弱くバイアスして、出力端子５には一定の電圧が得られ
る。In other words, if the voltage extracted from resistor group 2 is lower than the reference voltage, the output of error amplifier 3 becomes low, strongly biasing output transistor 4, and conversely, if the voltage extracted from resistor group 2 is higher than the reference voltage, the output of error amplifier 3 becomes low, strongly biasing output transistor 4. For example, by biasing the transistor 4 weakly, a constant voltage can be obtained at the output terminal 5.
第２図のボルテージ・レギュレーターを、集積回路（以
下、ＩＣと呼ぶ）化した場合、次のような問題点が生じ
る。When the voltage regulator shown in FIG. 2 is implemented as an integrated circuit (hereinafter referred to as an IC), the following problems arise.
出力端子５からの出力電圧をＶｏｕ ｔと呼ぶと、Ｙｏ
ｕ ｔは、式（１＋のように表わされる。If the output voltage from output terminal 5 is called Vout, Yo
u t is expressed as the formula (1+).
Ｖｏｕｔ＝ （Ｒ＋ ＋Ｉｈ）／ＲｔＸνｒｅｆ
−−−−−（１１ここでＲ１は、第２図の抵抗Ｒ，で
あり、Ｒ８は第２図の抵抗Ｒ２であり、Ｖｒｅｆは、基
準電圧回路１の出力電圧（以下、基準電圧と呼ぶ）であ
る。Vout= (R+ +Ih)/RtXνref
--------(11 Here, R1 is the resistor R in FIG. 2, R8 is the resistor R2 in FIG. 2, and Vref is the output voltage of the reference voltage circuit 1 (hereinafter referred to as reference voltage). ).
式（１）から明らかなように、ある所望の出力電圧Ｖｏ
ｕ ｔを得るためには、抵抗Ｒ，，１１，および基準電
圧νｒｅｆを適当な値に設定すれば良い、しかし、ＩＣ
化した場合には、抵抗Ｒ１＋ Ｒｚ及び基準電圧Ｖｒｅ
ｆの絶対値は、プロセスが変動することにより、ねらい
値から大きくずれてしまう、とりわけ第２図に示すボル
テージ・レギュレーターをＩＣ化した場合には、式（１
）中の基準電圧Ｖｒｅｆが太き（変動してしまい、所望
の基準電圧Ｖｒｅｆが得られない、そこで、式（１）中
の抵抗Ｒ８の値を調整することにより、所望の出力電圧
Ｖｏｕ ｔを得ている。As is clear from equation (1), a certain desired output voltage Vo
In order to obtain u t, it is sufficient to set the resistance R,,11 and the reference voltage νref to appropriate values.
, the resistance R1+ Rz and the reference voltage Vre
The absolute value of f deviates greatly from the target value due to process fluctuations. Especially when the voltage regulator shown in Figure 2 is integrated into an IC, the absolute value of
) is large (varies), making it impossible to obtain the desired reference voltage Vref. Therefore, by adjusting the value of resistor R8 in equation (1), the desired output voltage Vout can be obtained. It has gained.
以下、前記抵抗Ｒ２の従来の調整法を説明する。Hereinafter, a conventional method for adjusting the resistor R2 will be explained.
第３図に、従来の抵抗Ｒ１だけを抜き出した回路図を示
す、抵抗Ｒａ、 Ｒｂ、 Ｒｅ、 Ｒｄ＋ Ｒｅ、 Ｒ
ｆは直列に接続され、かつ、それぞれの抵抗に並列にア
ルミ配線が施されている。ＩＣ化プロセスによって基準
電圧回路が形成された後、基準電圧Ｖｒｅｆを測定し、
その値を式＋１１に代入し、所望の出力電圧Ｖｏｕｔが
得られる抵抗比（Ｒ＋＋Ｒｚ） ／Ｒｔの値を求める。Figure 3 shows a circuit diagram in which only the conventional resistor R1 is extracted, and the resistors Ra, Rb, Re, Rd+ Re, R
f are connected in series, and aluminum wiring is provided in parallel to each resistor. After the reference voltage circuit is formed by the IC process, the reference voltage Vref is measured,
Substituting this value into equation +11, the value of the resistance ratio (R++Rz)/Rt that provides the desired output voltage Vout is determined.
この抵抗比の値から、抵抗Ｒ１の値を換算し、切断すべ
きアルミ配線の箇所を決める０例えば、ｆｉｔ 抗Ｒｌ
ｔ：ｖ値が、Ｒｅ＋Ｒｆの値が必要だとすると、エツ
チング処理により抵抗ＲｅとＲｆに並列に接続されたア
ルミ配線部分を切断する。これにより、抵抗Ｒ１の値は
抵抗Ｒｅ＋Ｒｆの値となる。From this resistance ratio value, convert the value of resistor R1 and decide the location of the aluminum wiring to be cut.0For example, fit resistance Rl
If the t:v value requires a value of Re+Rf, the aluminum wiring portion connected in parallel to the resistors Re and Rf is cut by etching. As a result, the value of the resistor R1 becomes the value of the resistor Re+Rf.
しかし、上記のようなアルミ配線のエツチングによる調
整方法をとると、ＩＣウェハ上の全てのチップの抵抗Ｒ
８の値が、抵抗Ｒｅ ＋ ＲｆＯ値になってしまう、こ
れは歩留りを悪（するという問題を引き起こす、この理
由は前記プロセスの変動がＩＣウェハ内でも発生するた
めである０例えば、ウェハ内の左側と右側のチップでは
、前記基準電圧Ｖｒｅｆの値が異なってしまうため、左
側のチップから決めた抵抗値Ｒ８の値が、右側のチップ
では適用できないためである。However, if the adjustment method using aluminum wiring etching as described above is used, the resistance R of all chips on the IC wafer will be reduced.
The value of 8 becomes the resistance Re + RfO value, which causes a problem of poor yield, because the process variation occurs even within the IC wafer. This is because the value of the reference voltage Vref differs between the chips on the left and the right, so the value of the resistance value R8 determined from the chip on the left cannot be applied to the chip on the right.
本発明は、従来の技術の課題を解決することを目的とし
、とりわけ、歩留りの高いボルテージ・レギュレーター
を提供できた。The present invention aims to solve the problems of the conventional technology, and is particularly able to provide a high-yield voltage regulator.
具体的には、従来のアルミ配線のエツチングによる調整
法の換わりに、抵抗りに付加されたポリシリコン抵抗も
しくはアルミ配線によって形成されたリンク部材をレー
ザー光線（例えば、アトパンテスト社の７８０００ Ｇ
レーザリペア装置）によって、所望の箇所だけ切断する
ことにより、抵抗Ｒ９の値を調整し、所望の出力電圧Ｖ
ｏｕ ｔを得るものである。Specifically, instead of the conventional adjustment method by etching aluminum wiring, a link member formed by a polysilicon resistor added to a resistor or aluminum wiring is irradiated with a laser beam (for example, 78000 G from Atopan Test Co., Ltd.).
By cutting only the desired portion using a laser repair device), the value of the resistor R9 is adjusted, and the desired output voltage V is adjusted.
out.
以下、図面に従って本発明の一実施例を詳細に説明する
。第１図は、第３図の抵抗Ｒ３を改良したもので、ポリ
シリコン抵抗または、アルミ配線によって形成されたリ
ンク部材６〜１１を付加した回路図である。抵抗Ｒａ−
Ｒｆは第３図と同様である。Hereinafter, one embodiment of the present invention will be described in detail with reference to the drawings. FIG. 1 is a circuit diagram showing an improved version of the resistor R3 shown in FIG. 3, in which link members 6 to 11 formed of polysilicon resistors or aluminum wiring are added. Resistance Ra-
Rf is the same as in FIG.
さらに各抵抗Ｒａ＝Ｒｆのそれぞれの接続点と抵抗Ｒａ
の一端がレーザー光線によって切断できるリンク部材６
〜１１で接続されている。Furthermore, each connection point of each resistor Ra=Rf and the resistor Ra
A link member 6 whose one end can be cut by a laser beam
~11 are connected.
以下、調整法について説明する。形成された基準電圧回
路ｌの基準電圧Ｖｒｅｆを測定し、式（１１から所望の
出力電圧Ｖｏｕｔが得られる抵抗比（ＲＩ＋ｌ！２）／
Ｒ，を求め、その抵抗比から抵抗ｉｔ、の値を計算する
までは従来と同様である０例えば、抵抗Ｒ２の値として
、前記の例のように抵抗Ｒｅ ＋ Ｒｆが必要になった
とすると、レーザー光線によってリンク部材１ｏ、 ｉ
ｉを切断する。ここで、各リンク部材６〜１１の抵抗値
は抵抗Ｒａ＝Ｒｆの抵抗値より小さい値にしておけば、
抵抗Ｒ１の値はほとんど抵抗Ｒｅ ＋ Ｆｌｆの値にな
る。実際には抵抗Ｒａ−Ｒｆの値は、数十にΩ〜数ＭΩ
の値であり、一方、リンク部材６〜１１の抵抗値は数十
Ωのオーダーである。上記説明ではリンク部材としてポ
リシリコン抵抗を用いた場合を想定したが、リンク部材
にアルミを用いれば、抵抗Ｒ９の値はより抵抗Ｒｅ ＋
Ｒｆの値に近づくことは明らかである。The adjustment method will be explained below. The reference voltage Vref of the formed reference voltage circuit l is measured, and the resistance ratio (RI+l!2)/ which provides the desired output voltage Vout from equation (11) is calculated.
The process of finding R, and calculating the value of resistance it from its resistance ratio is the same as before. Link members 1o, i by laser beam
Cut i. Here, if the resistance value of each link member 6 to 11 is set to a value smaller than the resistance value of resistance Ra=Rf,
The value of the resistor R1 is almost the value of the resistor Re + Flf. In reality, the value of resistance Ra-Rf ranges from several tens of Ω to several MΩ.
On the other hand, the resistance values of the link members 6 to 11 are on the order of several tens of ohms. In the above explanation, it is assumed that a polysilicon resistor is used as the link member, but if aluminum is used as the link member, the value of the resistance R9 will be higher than the resistance Re +
It is clear that it approaches the value of Rf.
以上の調整法をＩＣウェハの各チップ毎に実行すれば、
ウェハ内で基準電圧Ｖｒｅｆが変動しても、それに合っ
たＲ１の値をレーザー光線によるリンク部材の切断で得
ることができる。If the above adjustment method is executed for each chip of the IC wafer,
Even if the reference voltage Vref varies within the wafer, an appropriate value of R1 can be obtained by cutting the link member with a laser beam.
本発明の他の実施例を第４図に示す、抵抗Ｒａ〜Ｒｆと
並列に、リンク部材１５〜２０が接続されている。Another embodiment of the present invention is shown in FIG. 4, in which link members 15 to 20 are connected in parallel to resistors Ra to Rf.
調整法については、前述の実施例と同様に所望の抵抗値
を持つ抵抗と並列に接続されているリンク部材をレーザ
ー光線によって切断する。As for the adjustment method, a link member connected in parallel with a resistor having a desired resistance value is cut with a laser beam, as in the previous embodiment.
なお、第２図では正の出力電圧を持つボルテージ・レギ
ュレーターについて示しているが、第５図のような負の
出力電圧を持つボルテージ・レギュレーターの抵抗Ｒ１
に、第１図、第４図に示すような抵抗を用いることで、
同等の効果があることは明らかである。Although Fig. 2 shows a voltage regulator with a positive output voltage, the resistor R1 of a voltage regulator with a negative output voltage as shown in Fig. 5
By using resistors as shown in Figures 1 and 4,
It is clear that they are equally effective.
（発明の効果）
以上述べたように本発明によれば、抵抗に付加されたリ
ンク部材を基準電圧Ｖｒｅｆから算出された箇所だけ、
レーザー光線によって切断することによって、所望の出
力電圧νｏｕＬを得ることができる。(Effects of the Invention) As described above, according to the present invention, the link members added to the resistor are connected only at the locations calculated from the reference voltage Vref.
By cutting with a laser beam, the desired output voltage νouL can be obtained.
これを１チツプ毎に行うことによって、歩留りの高いボ
ルテージ・レギュレーターを提供できるという効果があ
る。By performing this for each chip, it is possible to provide a voltage regulator with a high yield.
第１図は本発明のボルテージ・レギュレーターの抵抗部
の回路図、第２図は従来のボルテージ・レギュレーター
の回路図、第３図は第２図の抵抗部の詳細図、第４図は
本発明のボルテージ・レギュレーターの抵抗部の他の回
路図、第５図は従来の負の出力電圧を持つボルテージ・
レギュレーターの回路図である。
１・・・・基準電圧回路
２・・・・抵抗群
３・・・・誤差増幅器
６〜１１・・リンク部材
４・・・・出力トランジスタ
５・・・・出力端子
以上
出願人 セイコー電子工業株式会社
代理人 弁理士 林 敬 之 助
抵４えＲ１バー入力仁りｌの回路図
第１図
促東の抵抗Ｒ＋戸口路図
第３図
抵抗Ｒ１の１での実た例の回路図
第４図
従来の正の出〃電圧Ｅ将つポル子−ブ・ＬＡ“ユし−７
−カ回路口第２図
負の出Ｖ電圧と、１今ηホ゛ルテー・ヅル■ユＬ−９−
ハ回ｙｂ図第５図Fig. 1 is a circuit diagram of the resistor section of the voltage regulator of the present invention, Fig. 2 is a circuit diagram of a conventional voltage regulator, Fig. 3 is a detailed diagram of the resistor section of Fig. 2, and Fig. 4 is a circuit diagram of the resistor section of the present invention. Another circuit diagram of the resistor section of the voltage regulator, Figure 5, shows a conventional voltage regulator with a negative output voltage.
It is a circuit diagram of a regulator. 1... Reference voltage circuit 2... Resistor group 3... Error amplifiers 6 to 11... Link member 4... Output transistor 5... Output terminal and above Applicant: Seiko Electronics Co., Ltd. Company agent Patent attorney Keiyuki Hayashi Circuit diagram of auxiliary resistor 4e R1 bar input input Figure 1 Resistor R + doorway diagram of promotion east Figure 3 Circuit diagram of an example of resistor R1 at 1 Figure 4 Conventional positive output voltage E
-Circuit port Figure 2 Negative output V voltage and current
Figure 5
Claims (1)
タとからなるＣＭＯＳモノリシックＩＣ化されたボルテ
ージ・レギュレーターにおいて、前記抵抗にレーザー光
線によって切断できる複数のリンク部材を付加し、前記
リンク部材をレーザー光線によって全部もしくは、その
一部を切断することを特徴としたボルテージ・レギュレ
ーター。In a CMOS monolithic IC voltage regulator consisting of a reference voltage circuit, a resistor, an error amplifier, and an output transistor, a plurality of link members that can be cut by a laser beam are added to the resistor, and all or all of the link members are cut by the laser beam. , a voltage regulator characterized by cutting off a part of it.
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1009557A JPH02189607A (en) | 1989-01-18 | 1989-01-18 | Voltage regulator |
| KR1019900000431A KR0148689B1 (en) | 1989-01-18 | 1990-01-15 | A voltage regulator |
| GB9000917A GB2230625B (en) | 1989-01-18 | 1990-01-16 | A voltage regulator |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1009557A JPH02189607A (en) | 1989-01-18 | 1989-01-18 | Voltage regulator |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH02189607A true JPH02189607A (en) | 1990-07-25 |
Family
ID=11723585
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1009557A Pending JPH02189607A (en) | 1989-01-18 | 1989-01-18 | Voltage regulator |
Country Status (3)
| Country | Link |
|---|---|
| JP (1) | JPH02189607A (en) |
| KR (1) | KR0148689B1 (en) |
| GB (1) | GB2230625B (en) |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4476478A (en) * | 1980-04-24 | 1984-10-09 | Tokyo Shibaura Denki Kabushiki Kaisha | Semiconductor read only memory and method of making the same |
| DE3030620A1 (en) * | 1980-08-13 | 1982-03-11 | Siemens AG, 1000 Berlin und 8000 München | ARRANGEMENT FOR CHANGING THE ELECTRICAL CIRCUIT CONFIGURATION OF INTEGRATED SEMICONDUCTOR CIRCUITS |
| DE3341345A1 (en) * | 1983-11-15 | 1985-05-23 | SGS-ATES Deutschland Halbleiter-Bauelemente GmbH, 8018 Grafing | VOLTAGE REGULATOR |
| DE3341344C2 (en) * | 1983-11-15 | 1986-10-09 | SGS-ATES Deutschland Halbleiter-Bauelemente GmbH, 8018 Grafing | Line voltage regulator |
| JPS6489338A (en) * | 1987-05-19 | 1989-04-03 | Gazelle Microcircuits Inc | Semiconductor device |
-
1989
- 1989-01-18 JP JP1009557A patent/JPH02189607A/en active Pending
-
1990
- 1990-01-15 KR KR1019900000431A patent/KR0148689B1/en not_active IP Right Cessation
- 1990-01-16 GB GB9000917A patent/GB2230625B/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| GB2230625B (en) | 1993-05-12 |
| KR900012148A (en) | 1990-08-03 |
| GB9000917D0 (en) | 1990-03-14 |
| GB2230625A (en) | 1990-10-24 |
| KR0148689B1 (en) | 1998-12-01 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US7138868B2 (en) | Method and circuit for trimming a current source in a package | |
| US5220207A (en) | Load current monitor for MOS driver | |
| US8242770B2 (en) | Voltage sensing device | |
| JP2000092820A (en) | Drive controller, modulf, and composite module | |
| JPH079442B2 (en) | Current detection circuit | |
| US8508200B2 (en) | Power supply circuit using amplifiers and current voltage converter for improving ripple removal rate and differential balance | |
| EP0419819B1 (en) | Current mirror | |
| US6894477B1 (en) | Electrical current monitor | |
| JPH0365806A (en) | Operational amplifier having null offset which is adjustable by digital processing | |
| JPH02189607A (en) | Voltage regulator | |
| US7081775B2 (en) | Bias technique for operating point control in multistage circuits | |
| US5617056A (en) | Base current compensation circuit | |
| JP3019624B2 (en) | Current detector | |
| JP3175493B2 (en) | Current detection circuit | |
| JPH02181663A (en) | Current sensing circuit | |
| US6680651B2 (en) | Current mirror and differential amplifier for providing large current ratio and high output impedence | |
| JPH10283044A (en) | Constant current power unit | |
| JPH09312531A (en) | Differential amplifier | |
| JP2002374131A (en) | Automatic correction circuit of operational amplifier offset voltage | |
| US5973540A (en) | Ladder tracking buffer amplifier | |
| JP2005116634A (en) | Semiconductor device including plurality of reference voltage generating circuits and method for manufacturing same | |
| US6407637B1 (en) | Differential current mirror and method | |
| JPH03180915A (en) | Reference voltage generating circuit | |
| JP3123822B2 (en) | Current amplification factor compensation circuit | |
| JPH09236617A (en) | Adjustment method for acceleration sensor |