JPS571233A - Power aging device for semiconductor device - Google Patents

Power aging device for semiconductor device

Info

Publication number
JPS571233A
JPS571233A JP7518380A JP7518380A JPS571233A JP S571233 A JPS571233 A JP S571233A JP 7518380 A JP7518380 A JP 7518380A JP 7518380 A JP7518380 A JP 7518380A JP S571233 A JPS571233 A JP S571233A
Authority
JP
Japan
Prior art keywords
circuit
oscillation
power
trq
power source
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP7518380A
Other languages
Japanese (ja)
Inventor
Naoshi Kogure
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP7518380A priority Critical patent/JPS571233A/en
Publication of JPS571233A publication Critical patent/JPS571233A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering

Abstract

PURPOSE:To prevent the deterioration of characteristics due to the power aging of an extra-high frequency transistor by a method wherein a switching circuit to control power supply and a circuit section with which the switching will be opened by the oscillation output of the semiconductor device, are provided in the device. CONSTITUTION:In the device with which power aging is performed on the transistor (TR)Q having a high breaking frequency (>=7GHz) using base grounding, for example, a switching circuit 3 is connected to the power source VCB which supplies power to the TRQ. When the TRQ starts oscillation by wafting capacity C, this oscillation output is detected by a squelch circuit 2 through the intermidiary of a high-pass filter and the circuit 3 is opened, and the oscillation is stopped by breaking current from the power source VCB. The circuit 3 is closed by a circuit 2 after the oscillation has been discontinued and the power source VCB is turned on again. Through these procedures, as the oscillation can be prevented, the deterioration of characteristics such as decrease in the hFE of the TRQ and the like can be prevented.
JP7518380A 1980-06-04 1980-06-04 Power aging device for semiconductor device Pending JPS571233A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7518380A JPS571233A (en) 1980-06-04 1980-06-04 Power aging device for semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7518380A JPS571233A (en) 1980-06-04 1980-06-04 Power aging device for semiconductor device

Publications (1)

Publication Number Publication Date
JPS571233A true JPS571233A (en) 1982-01-06

Family

ID=13568827

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7518380A Pending JPS571233A (en) 1980-06-04 1980-06-04 Power aging device for semiconductor device

Country Status (1)

Country Link
JP (1) JPS571233A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4874711A (en) * 1987-05-26 1989-10-17 Georgia Tech Research Corporation Method for altering characteristics of active semiconductor devices

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4874711A (en) * 1987-05-26 1989-10-17 Georgia Tech Research Corporation Method for altering characteristics of active semiconductor devices

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