JPS645068A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS645068A
JPS645068A JP16002887A JP16002887A JPS645068A JP S645068 A JPS645068 A JP S645068A JP 16002887 A JP16002887 A JP 16002887A JP 16002887 A JP16002887 A JP 16002887A JP S645068 A JPS645068 A JP S645068A
Authority
JP
Japan
Prior art keywords
substrate
region
impurity diffused
type
gate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP16002887A
Other languages
English (en)
Other versions
JP2532478B2 (ja
Inventor
Toshiki Yabu
Kazumi Kurimoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=15706396&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=JPS645068(A) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP62160028A priority Critical patent/JP2532478B2/ja
Publication of JPS645068A publication Critical patent/JPS645068A/ja
Application granted granted Critical
Publication of JP2532478B2 publication Critical patent/JP2532478B2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

JP62160028A 1987-06-26 1987-06-26 半導体装置の製造方法 Expired - Lifetime JP2532478B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62160028A JP2532478B2 (ja) 1987-06-26 1987-06-26 半導体装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62160028A JP2532478B2 (ja) 1987-06-26 1987-06-26 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPS645068A true JPS645068A (en) 1989-01-10
JP2532478B2 JP2532478B2 (ja) 1996-09-11

Family

ID=15706396

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62160028A Expired - Lifetime JP2532478B2 (ja) 1987-06-26 1987-06-26 半導体装置の製造方法

Country Status (1)

Country Link
JP (1) JP2532478B2 (ja)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03138951A (ja) * 1989-10-24 1991-06-13 Matsushita Electric Ind Co Ltd Ｍｏｓ形トランジスタの製造方法
US5367013A (en) * 1991-10-09 1994-11-22 Sumitomo Chemical Company, Limited Process for producing reinforced crystalline engineering plastic composition
WO2004114412A1 (ja) * 2003-06-19 2004-12-29 Sharp Kabushiki Kaisha 半導体装置及びその製造方法

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61160975A (ja) * 1985-01-08 1986-07-21 Matsushita Electric Ind Co Ltd Ｍｏｓ型電界効果トランジスタ
JPS61258475A (ja) * 1985-05-11 1986-11-15 Ricoh Co Ltd Ｌｄｄ構造をもつ半導体装置の製造方法
JPS6251216A (ja) * 1985-08-30 1987-03-05 Toshiba Corp 半導体装置の製造方法
JPS6276617A (ja) * 1985-09-30 1987-04-08 Toshiba Corp 半導体装置の製造方法
JPS62113474A (ja) * 1985-11-13 1987-05-25 Toshiba Corp 半導体集積回路の製造方法
JPS63233567A (ja) * 1987-03-23 1988-09-29 Nippon Telegr & Teleph Corp <Ntt> 半導体装置の製造方法

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61160975A (ja) * 1985-01-08 1986-07-21 Matsushita Electric Ind Co Ltd Ｍｏｓ型電界効果トランジスタ
JPS61258475A (ja) * 1985-05-11 1986-11-15 Ricoh Co Ltd Ｌｄｄ構造をもつ半導体装置の製造方法
JPS6251216A (ja) * 1985-08-30 1987-03-05 Toshiba Corp 半導体装置の製造方法
JPS6276617A (ja) * 1985-09-30 1987-04-08 Toshiba Corp 半導体装置の製造方法
JPS62113474A (ja) * 1985-11-13 1987-05-25 Toshiba Corp 半導体集積回路の製造方法
JPS63233567A (ja) * 1987-03-23 1988-09-29 Nippon Telegr & Teleph Corp <Ntt> 半導体装置の製造方法

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03138951A (ja) * 1989-10-24 1991-06-13 Matsushita Electric Ind Co Ltd Ｍｏｓ形トランジスタの製造方法
US5367013A (en) * 1991-10-09 1994-11-22 Sumitomo Chemical Company, Limited Process for producing reinforced crystalline engineering plastic composition
WO2004114412A1 (ja) * 2003-06-19 2004-12-29 Sharp Kabushiki Kaisha 半導体装置及びその製造方法

Also Published As

Publication number Publication date
JP2532478B2 (ja) 1996-09-11

Similar Documents

Publication Publication Date Title
KR960026938A (ko) 피(p)형 금속 산화물 반도체 전계효과 트랜지스터(PMOSFET) 반도체장치와 그의 제조방법 및 상보형 금속 산화물 반도체(CMOS) 장치
JPS5333074A (en) Production of complementary type insulated gate field effect semiconductor device
JPS645068A (en) Manufacture of semiconductor device
JPS6433970A (en) Field effect semiconductor device
JPS57107067A (en) Manufacture of semiconductor device
JPS5583263A (en) Mos semiconductor device
JPH0344075A (ja) 半導体装置の製造方法
JPS5552275A (en) Junction field effect transistor
JPS5783059A (en) Manufacture of mos type semiconductor device
JPS55166958A (en) Manufacture of semiconductor device
JPS54117691A (en) Production of insulating gate-type semiconductor device
JPS6477956A (en) Manufacture of complementary mos transistor
JPS5742167A (en) Production of mos type semiconductor device
JPS57136358A (en) Integrated circuit device and manufacture thereof
JPS6448464A (en) Semiconductor device
JPS5550661A (en) Insulated gate type field effect semiconductor device
JPS5574181A (en) Preparing junction type field effect transistor
JPS645066A (en) Manufacture of field effect transistor
JPH02219237A (ja) Ｍｉｓ型半導体装置
JPS5580361A (en) Production of vertical junction gate type field effect transistor
JPS5612773A (en) Silicon gate mos field-effect transistor
JPS5721855A (en) Manufacture of complementary mos semiconductor device
JPS56104470A (en) Semiconductor device and manufacture thereof
JPS6449269A (en) Manufacture of semiconductor device
JPS55145374A (en) Insulated gate field effect semiconductor device and fabricating method of the same