JPS6450428A - Oxide thin film having high permittivity and formation thereof - Google Patents

Oxide thin film having high permittivity and formation thereof

Info

Publication number
JPS6450428A
JPS6450428A JP20697387A JP20697387A JPS6450428A JP S6450428 A JPS6450428 A JP S6450428A JP 20697387 A JP20697387 A JP 20697387A JP 20697387 A JP20697387 A JP 20697387A JP S6450428 A JPS6450428 A JP S6450428A
Authority
JP
Japan
Prior art keywords
thin film
oxide thin
silicon
decrease
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP20697387A
Other languages
English (en)
Other versions
JP2770856B2 (ja
Inventor
Yasuo Tarui
Masahiro Matsui
Tetsushi Oka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
TOKYO NOUKOU UNIV
Japan Radio Co Ltd
Asahi Chemical Industry Co Ltd
Original Assignee
TOKYO NOUKOU UNIV
Japan Radio Co Ltd
Asahi Chemical Industry Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by TOKYO NOUKOU UNIV, Japan Radio Co Ltd, Asahi Chemical Industry Co Ltd filed Critical TOKYO NOUKOU UNIV
Priority to JP62206973A priority Critical patent/JP2770856B2/ja
Publication of JPS6450428A publication Critical patent/JPS6450428A/ja
Application granted granted Critical
Publication of JP2770856B2 publication Critical patent/JP2770856B2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Landscapes

  • Inorganic Compounds Of Heavy Metals (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Formation Of Insulating Films (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
JP62206973A 1987-08-20 1987-08-20 高誘電率酸化物薄膜の形成方法 Expired - Lifetime JP2770856B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62206973A JP2770856B2 (ja) 1987-08-20 1987-08-20 高誘電率酸化物薄膜の形成方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62206973A JP2770856B2 (ja) 1987-08-20 1987-08-20 高誘電率酸化物薄膜の形成方法

Publications (2)

Publication Number Publication Date
JPS6450428A true JPS6450428A (en) 1989-02-27
JP2770856B2 JP2770856B2 (ja) 1998-07-02

Family

ID=16532068

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62206973A Expired - Lifetime JP2770856B2 (ja) 1987-08-20 1987-08-20 高誘電率酸化物薄膜の形成方法

Country Status (1)

Country Link
JP (1) JP2770856B2 (ja)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02196427A (ja) * 1989-01-25 1990-08-03 Nec Corp 金属酸化膜の気相成長方法
JP2003124460A (ja) * 2001-10-15 2003-04-25 Atsushi Ogura ゲート酸化膜、素子、ゲート酸化膜形成方法、ゲート酸化膜形成材料
JP2004304053A (ja) * 2003-03-31 2004-10-28 Fujitsu Ltd 半導体装置およびその製造方法
JP2006135084A (ja) * 2004-11-05 2006-05-25 Fujitsu Ltd 半導体装置およびその製造方法
JPWO2004107451A1 (ja) * 2003-05-29 2006-07-20 日本電気株式会社 Ｍｉｓ型電界効果トランジスタを備える半導体装置及びその製造方法並びに金属酸化膜の形成方法
JP2007287856A (ja) * 2006-04-14 2007-11-01 Toshiba Corp 半導体装置の製造方法
JP2008252118A (ja) * 1998-03-12 2008-10-16 Lucent Technol Inc ドープされた金属酸化物誘電体材料を有する電子部品及びドープされた金属酸化物誘電体材料を有する電子部品の作製プロセス
DE102013222052A1 (de) 2012-12-20 2014-06-26 Mitsubishi Electric Corporation Halbleitervorrichtung und Verfahren zum Herstellen derselben

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5861634A (ja) * 1981-10-09 1983-04-12 Fujitsu Ltd 半導体装置用誘電体層の製造方法
JPS58220457A (ja) * 1982-06-11 1983-12-22 インタ−ナショナル　ビジネス　マシ−ンズ　コ−ポレ−ション 誘電体材料の形成方法
JPS59195536A (ja) * 1983-04-19 1984-11-06 Res Dev Corp Of Japan バナジウム−ケイ素系非晶質化合物材料及びその製造法
JPS60225434A (ja) * 1984-04-23 1985-11-09 Nec Corp 高誘電率多元複合酸化膜の形成法
JPS6235562A (ja) * 1985-08-08 1987-02-16 Nec Corp 半導体装置
JPS62166529A (ja) * 1986-01-20 1987-07-23 Nec Corp 薄膜の形成方法

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5861634A (ja) * 1981-10-09 1983-04-12 Fujitsu Ltd 半導体装置用誘電体層の製造方法
JPS58220457A (ja) * 1982-06-11 1983-12-22 インタ−ナショナル　ビジネス　マシ−ンズ　コ−ポレ−ション 誘電体材料の形成方法
JPS59195536A (ja) * 1983-04-19 1984-11-06 Res Dev Corp Of Japan バナジウム−ケイ素系非晶質化合物材料及びその製造法
JPS60225434A (ja) * 1984-04-23 1985-11-09 Nec Corp 高誘電率多元複合酸化膜の形成法
JPS6235562A (ja) * 1985-08-08 1987-02-16 Nec Corp 半導体装置
JPS62166529A (ja) * 1986-01-20 1987-07-23 Nec Corp 薄膜の形成方法

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02196427A (ja) * 1989-01-25 1990-08-03 Nec Corp 金属酸化膜の気相成長方法
JP2008252118A (ja) * 1998-03-12 2008-10-16 Lucent Technol Inc ドープされた金属酸化物誘電体材料を有する電子部品及びドープされた金属酸化物誘電体材料を有する電子部品の作製プロセス
JP2013093589A (ja) * 1998-03-12 2013-05-16 Alcatel-Lucent Usa Inc 誘電体材料を含む個別要素又は半導体デバイスを含む集積回路デバイス
JP2003124460A (ja) * 2001-10-15 2003-04-25 Atsushi Ogura ゲート酸化膜、素子、ゲート酸化膜形成方法、ゲート酸化膜形成材料
JP2004304053A (ja) * 2003-03-31 2004-10-28 Fujitsu Ltd 半導体装置およびその製造方法
JPWO2004107451A1 (ja) * 2003-05-29 2006-07-20 日本電気株式会社 Ｍｉｓ型電界効果トランジスタを備える半導体装置及びその製造方法並びに金属酸化膜の形成方法
JP4742867B2 (ja) * 2003-05-29 2011-08-10 日本電気株式会社 Ｍｉｓ型電界効果トランジスタを備える半導体装置
JP2006135084A (ja) * 2004-11-05 2006-05-25 Fujitsu Ltd 半導体装置およびその製造方法
JP2007287856A (ja) * 2006-04-14 2007-11-01 Toshiba Corp 半導体装置の製造方法
US8609487B2 (en) 2006-04-14 2013-12-17 Kabushiki Kaisha Toshiba Method of manufacturing semiconductor device
DE102013222052A1 (de) 2012-12-20 2014-06-26 Mitsubishi Electric Corporation Halbleitervorrichtung und Verfahren zum Herstellen derselben

Also Published As

Publication number Publication date
JP2770856B2 (ja) 1998-07-02

Similar Documents

Publication Publication Date Title
JPS5742164A (en) Semiconductor device
JPS6450428A (en) Oxide thin film having high permittivity and formation thereof
JPS5687340A (en) Semiconductor device and manufacture thereof
JPS57153469A (en) Insulated gate type field effect transistor
DE3587005D1 (de) Verfahren zur herstellung von sinterkontaktwerkstoffen.
JPS5627935A (en) Semiconductor device
GB1528644A (en) Stabilization of hexamethylcyclotrisiloxane
JPS5678174A (en) Variable capacity diode
KR950021210A (ko) 반도체 소자의 산화막 형성방법
JPS6477167A (en) Hetero-bipolar transistor
Solob'eva et al. Electrical Properties of Epitaxial Layers of Gallium Arsenide Doped With Isovalent Antimony or Indium
JPS5726171A (en) Dry etching method for molybdenum
JPS54131881A (en) Junction-type field effect transistor
JPS6473780A (en) Manufacture of superconducting device
JPS5754309A (ja) Sankabutsujiseihakumaku
JPS64757A (en) Semiconductor device
Ballandovich et al. Effect of Annealing on the Diffusion Length of Minority Charge Carriers in n-Type SiC(6 H)
JPS568879A (en) Insulating gate field effect transistor
JPS6439067A (en) Thin film transistor
JPS558015A (en) Mos type semiconductor device manufacturing method
JPS57126170A (en) Semiconductor constant voltage device
JPS55113376A (en) Manufacturing method of semiconductor device
JPS559454A (en) Short channel mis type electric field effective transistor
JPS57111059A (en) Memory cell and manufacture thereof
JPS527000A (en) Dielectric porcelain manufacture method

Legal Events

Date Code Title Description
R350 Written notification of registration of transfer

Free format text: JAPANESE INTERMEDIATE CODE: R350

S111 Request for change of ownership or part of ownership

Free format text: JAPANESE INTERMEDIATE CODE: R313115

R350 Written notification of registration of transfer

Free format text: JAPANESE INTERMEDIATE CODE: R350

EXPY Cancellation because of completion of term
FPAY Renewal fee payment (prs date is renewal date of database)

Free format text: PAYMENT UNTIL: 20080417

Year of fee payment: 10