JPS64757A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS64757A JPS64757A JP62155681A JP15568187A JPS64757A JP S64757 A JPS64757 A JP S64757A JP 62155681 A JP62155681 A JP 62155681A JP 15568187 A JP15568187 A JP 15568187A JP S64757 A JPS64757 A JP S64757A
- Authority
- JP
- Japan
- Prior art keywords
- channel region
- tisi
- thickness
- implanted
- silicide
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Electrodes Of Semiconductors (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Abstract
PURPOSE: To obtain a semiconductor device, which can display the maximum electric characteristics within a design rule and can achieve a high speed, by lining silicide layers having the different thicknesses in the active regions of a P-channel region and an N-channel region.
CONSTITUTION: Ti is formed to a thickness of 600Å on BF2-ion implanted silicon and silicon, in which 5×1016-2 of As ions are implanted. Thereafter annealing is performed at 680∼700°C for 30sec. Then TiSi2 9 is formed to a thickness of about 0.1μm on the BF2-ion implanted layer. TiSi2 8 having a thickness of about 0.06μm and TiSi are formed on the As implanted region. The TiSi is removed with RCA liquid. Therefore, the Ti silicide films having the different thicknesses are formed in a P-channel region and an N-channel region by the same process. Therefore, the silicide layer in the N-channel region is thin. The silicide layer in the P-channel region can be made thick within the allowance of a design rule.
COPYRIGHT: (C)1989,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62155681A JP2658057B2 (en) | 1987-06-23 | 1987-06-23 | Semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62155681A JP2658057B2 (en) | 1987-06-23 | 1987-06-23 | Semiconductor device |
Publications (3)
Publication Number | Publication Date |
---|---|
JPH01757A JPH01757A (en) | 1989-01-05 |
JPS64757A true JPS64757A (en) | 1989-01-05 |
JP2658057B2 JP2658057B2 (en) | 1997-09-30 |
Family
ID=15611242
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP62155681A Expired - Lifetime JP2658057B2 (en) | 1987-06-23 | 1987-06-23 | Semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP2658057B2 (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2002047167A1 (en) * | 2000-12-08 | 2002-06-13 | Hitachi, Ltd. | Semiconductor device |
US6649976B2 (en) | 1994-01-28 | 2003-11-18 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor device having metal silicide film and manufacturing method thereof |
JP2008311673A (en) * | 2000-12-08 | 2008-12-25 | Renesas Technology Corp | Semiconductor device and method of manufacturing the same |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6295822A (en) * | 1985-10-23 | 1987-05-02 | Hitachi Ltd | Manufacture of semiconductor device |
-
1987
- 1987-06-23 JP JP62155681A patent/JP2658057B2/en not_active Expired - Lifetime
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6295822A (en) * | 1985-10-23 | 1987-05-02 | Hitachi Ltd | Manufacture of semiconductor device |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6649976B2 (en) | 1994-01-28 | 2003-11-18 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor device having metal silicide film and manufacturing method thereof |
WO2002047167A1 (en) * | 2000-12-08 | 2002-06-13 | Hitachi, Ltd. | Semiconductor device |
JP2003086708A (en) * | 2000-12-08 | 2003-03-20 | Hitachi Ltd | Semiconductor device and manufacturing method thereof |
US6982465B2 (en) | 2000-12-08 | 2006-01-03 | Renesas Technology Corp. | Semiconductor device with CMOS-field-effect transistors having improved drain current characteristics |
JP2008311673A (en) * | 2000-12-08 | 2008-12-25 | Renesas Technology Corp | Semiconductor device and method of manufacturing the same |
Also Published As
Publication number | Publication date |
---|---|
JP2658057B2 (en) | 1997-09-30 |
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