JPS5492172A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS5492172A
JPS5492172A JP15931377A JP15931377A JPS5492172A JP S5492172 A JPS5492172 A JP S5492172A JP 15931377 A JP15931377 A JP 15931377A JP 15931377 A JP15931377 A JP 15931377A JP S5492172 A JPS5492172 A JP S5492172A
Authority
JP
Japan
Prior art keywords
channel
channel part
electrical
physical properties
ion injection
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP15931377A
Other languages
Japanese (ja)
Inventor
Junichi Hoshi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Epson Corp
Suwa Seikosha KK
Original Assignee
Seiko Epson Corp
Suwa Seikosha KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Epson Corp, Suwa Seikosha KK filed Critical Seiko Epson Corp
Priority to JP15931377A priority Critical patent/JPS5492172A/en
Publication of JPS5492172A publication Critical patent/JPS5492172A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE: To improve the electrical and physical properties of a semiconductor element by forming a uniform diffusion layer through ion injection.
CONSTITUTION: Independently of substrate 6, P-channel part 5 is formed and the impurity density of N-channel part 7 can be decided regardless of that of the P- channel part. Then, since both the channel parts are in the layer formed through ion injection, they are uniform in terms of electrical and physical properties, so that a short channel can be formed which has a little dispersion in desirable characteristic.
COPYRIGHT: (C)1979,JPO&Japio
JP15931377A 1977-12-29 1977-12-29 Semiconductor device Pending JPS5492172A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15931377A JPS5492172A (en) 1977-12-29 1977-12-29 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15931377A JPS5492172A (en) 1977-12-29 1977-12-29 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS5492172A true JPS5492172A (en) 1979-07-21

Family

ID=15691061

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15931377A Pending JPS5492172A (en) 1977-12-29 1977-12-29 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS5492172A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6066459A (en) * 1983-09-21 1985-04-16 Seiko Epson Corp Semiconductor device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6066459A (en) * 1983-09-21 1985-04-16 Seiko Epson Corp Semiconductor device
JPH065710B2 (en) * 1983-09-21 1994-01-19 セイコーエプソン株式会社 Semiconductor device

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