JPS6432633A - Taper etching method - Google Patents
Taper etching methodInfo
- Publication number
- JPS6432633A JPS6432633A JP62187535A JP18753587A JPS6432633A JP S6432633 A JPS6432633 A JP S6432633A JP 62187535 A JP62187535 A JP 62187535A JP 18753587 A JP18753587 A JP 18753587A JP S6432633 A JPS6432633 A JP S6432633A
- Authority
- JP
- Japan
- Prior art keywords
- etching
- temperature
- substrate
- rate
- patterns
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000005530 etching Methods 0.000 title abstract 9
- 238000000034 method Methods 0.000 title 1
- 239000000758 substrate Substances 0.000 abstract 4
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
- H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
- H01L21/32135—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only
- H01L21/32136—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only using plasmas
- H01L21/32137—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only using plasmas of silicon-containing layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31105—Etching inorganic layers
- H01L21/31111—Etching inorganic layers by chemical means
- H01L21/31116—Etching inorganic layers by chemical means by dry-etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
- H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
- H01L21/32135—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only
- H01L21/32136—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only using plasmas
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Plasma & Fusion (AREA)
- Inorganic Chemistry (AREA)
- Drying Of Semiconductors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62187535A JPS6432633A (en) | 1987-07-29 | 1987-07-29 | Taper etching method |
KR1019880008833A KR910007539B1 (ko) | 1987-07-29 | 1988-07-15 | 드라이에칭방법 |
DE3852230T DE3852230T2 (de) | 1987-07-29 | 1988-07-15 | Trockenätzverfahren. |
EP88111438A EP0301335B1 (en) | 1987-07-29 | 1988-07-15 | Method of dry etching |
US07/223,642 US4986877A (en) | 1987-07-29 | 1988-07-25 | Method of dry etching |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62187535A JPS6432633A (en) | 1987-07-29 | 1987-07-29 | Taper etching method |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS6432633A true JPS6432633A (en) | 1989-02-02 |
Family
ID=16207788
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP62187535A Pending JPS6432633A (en) | 1987-07-29 | 1987-07-29 | Taper etching method |
Country Status (5)
Country | Link |
---|---|
US (1) | US4986877A (ja) |
EP (1) | EP0301335B1 (ja) |
JP (1) | JPS6432633A (ja) |
KR (1) | KR910007539B1 (ja) |
DE (1) | DE3852230T2 (ja) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5318667A (en) * | 1991-04-04 | 1994-06-07 | Hitachi, Ltd. | Method and apparatus for dry etching |
US5352327A (en) * | 1992-07-10 | 1994-10-04 | Harris Corporation | Reduced temperature suppression of volatilization of photoexcited halogen reaction products from surface of silicon wafer |
US6333273B1 (en) | 1991-04-04 | 2001-12-25 | Hitachi, Ltd. | Method and apparatus for dry etching |
Families Citing this family (25)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5316616A (en) * | 1988-02-09 | 1994-05-31 | Fujitsu Limited | Dry etching with hydrogen bromide or bromine |
US5002631A (en) * | 1990-03-09 | 1991-03-26 | At&T Bell Laboratories | Plasma etching apparatus and method |
US5474650A (en) * | 1991-04-04 | 1995-12-12 | Hitachi, Ltd. | Method and apparatus for dry etching |
JP3248222B2 (ja) * | 1991-06-18 | 2002-01-21 | ソニー株式会社 | ドライエッチング方法 |
US5171393A (en) * | 1991-07-29 | 1992-12-15 | Moffat William A | Wafer processing apparatus |
JP3412173B2 (ja) * | 1991-10-21 | 2003-06-03 | セイコーエプソン株式会社 | 半導体装置の製造方法 |
US5269880A (en) * | 1992-04-03 | 1993-12-14 | Northern Telecom Limited | Tapering sidewalls of via holes |
US5302239A (en) * | 1992-05-15 | 1994-04-12 | Micron Technology, Inc. | Method of making atomically sharp tips useful in scanning probe microscopes |
US5753130A (en) | 1992-05-15 | 1998-05-19 | Micron Technology, Inc. | Method for forming a substantially uniform array of sharp tips |
US5302238A (en) * | 1992-05-15 | 1994-04-12 | Micron Technology, Inc. | Plasma dry etch to produce atomically sharp asperities useful as cold cathodes |
KR100293830B1 (ko) * | 1992-06-22 | 2001-09-17 | 리차드 에이치. 로브그렌 | 플라즈마 처리 쳄버내의 잔류물 제거를 위한 플라즈마 정결방법 |
JP2650178B2 (ja) * | 1992-12-05 | 1997-09-03 | ヤマハ株式会社 | ドライエッチング方法及び装置 |
JP3349001B2 (ja) * | 1994-12-29 | 2002-11-20 | ソニー株式会社 | 金属膜の形成方法 |
JPH08274073A (ja) * | 1995-03-31 | 1996-10-18 | Sony Corp | アルミニウム系金属膜のエッチング方法 |
JPH0964366A (ja) * | 1995-08-23 | 1997-03-07 | Toshiba Corp | 薄膜トランジスタ |
US5647953A (en) * | 1995-12-22 | 1997-07-15 | Lam Research Corporation | Plasma cleaning method for removing residues in a plasma process chamber |
US5882535A (en) * | 1997-02-04 | 1999-03-16 | Micron Technology, Inc. | Method for forming a hole in a semiconductor device |
US6582617B1 (en) * | 1997-02-28 | 2003-06-24 | Candescent Technologies Corporation | Plasma etching using polycarbonate mask and low-pressure high density plasma |
US5849641A (en) * | 1997-03-19 | 1998-12-15 | Lam Research Corporation | Methods and apparatus for etching a conductive layer to improve yield |
US6833280B1 (en) * | 1998-03-13 | 2004-12-21 | Micron Technology, Inc. | Process for fabricating films of uniform properties on semiconductor devices |
US6077789A (en) * | 1998-07-14 | 2000-06-20 | United Microelectronics Corp. | Method for forming a passivation layer with planarization |
US6770564B1 (en) * | 1998-07-29 | 2004-08-03 | Denso Corporation | Method of etching metallic thin film on thin film resistor |
US6403423B1 (en) | 2000-11-15 | 2002-06-11 | International Business Machines Corporation | Modified gate processing for optimized definition of array and logic devices on same chip |
JP5499920B2 (ja) * | 2010-06-09 | 2014-05-21 | 住友電気工業株式会社 | 半導体光デバイスの製造方法 |
CN105355550B (zh) * | 2015-12-02 | 2018-05-01 | 中国科学院微电子研究所 | Iii族氮化物低损伤刻蚀方法 |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5690525A (en) * | 1979-11-28 | 1981-07-22 | Fujitsu Ltd | Manufacture of semiconductor device |
JPS577936A (en) * | 1980-06-18 | 1982-01-16 | Fujitsu Ltd | Manufacture of semiconductor device |
JPS6066823A (ja) * | 1983-09-22 | 1985-04-17 | Semiconductor Energy Lab Co Ltd | 半導体エッチング方法 |
JPH0614518B2 (ja) * | 1984-01-27 | 1994-02-23 | 株式会社日立製作所 | 表面反応の制御方法 |
JPS60169140A (ja) * | 1984-02-13 | 1985-09-02 | Hitachi Ltd | ドライエツチング方法 |
US4639288A (en) * | 1984-11-05 | 1987-01-27 | Advanced Micro Devices, Inc. | Process for formation of trench in integrated circuit structure using isotropic and anisotropic etching |
US4726879A (en) * | 1986-09-08 | 1988-02-23 | International Business Machines Corporation | RIE process for etching silicon isolation trenches and polycides with vertical surfaces |
DE3752140T2 (de) * | 1986-09-05 | 1998-03-05 | Hitachi Ltd | Trockenes Ätzverfahren |
JPS63238288A (ja) * | 1987-03-27 | 1988-10-04 | Fujitsu Ltd | ドライエツチング方法 |
-
1987
- 1987-07-29 JP JP62187535A patent/JPS6432633A/ja active Pending
-
1988
- 1988-07-15 DE DE3852230T patent/DE3852230T2/de not_active Expired - Fee Related
- 1988-07-15 KR KR1019880008833A patent/KR910007539B1/ko not_active IP Right Cessation
- 1988-07-15 EP EP88111438A patent/EP0301335B1/en not_active Expired - Lifetime
- 1988-07-25 US US07/223,642 patent/US4986877A/en not_active Expired - Fee Related
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5318667A (en) * | 1991-04-04 | 1994-06-07 | Hitachi, Ltd. | Method and apparatus for dry etching |
US5354418A (en) * | 1991-04-04 | 1994-10-11 | Hitachi, Ltd. | Method for dry etching |
US6333273B1 (en) | 1991-04-04 | 2001-12-25 | Hitachi, Ltd. | Method and apparatus for dry etching |
US7071114B2 (en) | 1991-04-04 | 2006-07-04 | Hitachi, Ltd. | Method and apparatus for dry etching |
US5352327A (en) * | 1992-07-10 | 1994-10-04 | Harris Corporation | Reduced temperature suppression of volatilization of photoexcited halogen reaction products from surface of silicon wafer |
Also Published As
Publication number | Publication date |
---|---|
EP0301335A3 (en) | 1989-05-24 |
DE3852230T2 (de) | 1995-04-06 |
US4986877A (en) | 1991-01-22 |
EP0301335A2 (en) | 1989-02-01 |
KR910007539B1 (ko) | 1991-09-27 |
DE3852230D1 (de) | 1995-01-12 |
KR890003004A (ko) | 1989-04-12 |
EP0301335B1 (en) | 1994-11-30 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JPS6432633A (en) | Taper etching method | |
IE791448L (en) | Dry etching process using plasma. | |
EP0252439A3 (en) | Method and apparatus for surface treating of substrates | |
EP0358350A3 (en) | Forming a Prescribed Pattern on a Semiconductor Device Layer | |
JPS5434751A (en) | Washing method for silicon wafer | |
JPS5740940A (en) | Semiconductor device | |
KR960037879A (ko) | 실리콘 단결정의 종결정 | |
JPS5533060A (en) | Composite dry etching process | |
JPS5717496A (en) | Liquid phase growing method for single crystal of compound semiconductor | |
JPS57100733A (en) | Etching method for semiconductor substrate | |
JPS5787134A (en) | Local etching method | |
JPS5427156A (en) | Automatic operation controlling method for bucket crane | |
JPS5719400A (en) | Manufacture of catalyst substrate | |
JPS6442133A (en) | Taper etching of insulating film | |
JPS6475072A (en) | Rotary treatment equipment | |
JPS522273A (en) | Method of treating semiconductor substrate | |
JPS57187940A (en) | Surface treatment of compound semiconductor | |
JPS6428826A (en) | Semiconductor substrate etching device | |
JPS5643728A (en) | Formation of polyimide pattern | |
JPS5299065A (en) | Production of semiconductor device | |
JPS57118654A (en) | Circuit substrate | |
Dexter et al. | Method and Apparatus for Thermochemical Treatment | |
Su | Control of Effective Case Depth for Carburized Parts | |
JPS544245A (en) | Washing equipment | |
GB1536763A (en) | Manufacture of semiconductor body |