JPS5643728A - Formation of polyimide pattern - Google Patents

Formation of polyimide pattern

Info

Publication number
JPS5643728A
JPS5643728A JP11979179A JP11979179A JPS5643728A JP S5643728 A JPS5643728 A JP S5643728A JP 11979179 A JP11979179 A JP 11979179A JP 11979179 A JP11979179 A JP 11979179A JP S5643728 A JPS5643728 A JP S5643728A
Authority
JP
Japan
Prior art keywords
pattern
polyamide
polyimide
exposed
etching
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP11979179A
Other languages
Japanese (ja)
Inventor
Masanao Itoga
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP11979179A priority Critical patent/JPS5643728A/en
Publication of JPS5643728A publication Critical patent/JPS5643728A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31127—Etching organic layers
    • H01L21/31133—Etching organic layers by chemical means
    • H01L21/31138—Etching organic layers by chemical means by dry-etching

Landscapes

  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • General Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Drying Of Semiconductors (AREA)
  • Formation Of Insulating Films (AREA)

Abstract

PURPOSE:To obtain a highly precise polyimide pattern by a method wherein a negative-type resist is applied on a substrate to be treated, it is exposed and developed into a desired pattern, on which polyimide or polyamide is applied and then a plasma etching is performed. CONSTITUTION:A negative-type resist such as toriaryl isocyanate or the like, for example, is applied on a substrate to be treated, a preparatory heat treatment is performed, the desired pattern is exposed to an electron bean, it is developed and then a region to be exposed 2E is left. On this region 2E, polyamide or polyamide imide 3 is applied, and after performing a heat treatment, a polyimide pattern which is a reversed pattern of a resist pattern 2E is formed by etching the polyamide 3 with a plasma-etching performed using CF4 gas or the like. Hence, a highly precise pattern without undercuts can be obtained by reduced work processes.
JP11979179A 1979-09-18 1979-09-18 Formation of polyimide pattern Pending JPS5643728A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11979179A JPS5643728A (en) 1979-09-18 1979-09-18 Formation of polyimide pattern

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11979179A JPS5643728A (en) 1979-09-18 1979-09-18 Formation of polyimide pattern

Publications (1)

Publication Number Publication Date
JPS5643728A true JPS5643728A (en) 1981-04-22

Family

ID=14770305

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11979179A Pending JPS5643728A (en) 1979-09-18 1979-09-18 Formation of polyimide pattern

Country Status (1)

Country Link
JP (1) JPS5643728A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0964440A2 (en) * 1998-06-11 1999-12-15 Canon Kabushiki Kaisha Etching method for processing substrate, dry etching method for polyetheramide resin layer, production method of ink-jet printing head, ink-jet head and ink-jet printing apparatus
EP1309000A2 (en) * 2001-10-30 2003-05-07 Trw Inc. Via formation in polymers

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0964440A2 (en) * 1998-06-11 1999-12-15 Canon Kabushiki Kaisha Etching method for processing substrate, dry etching method for polyetheramide resin layer, production method of ink-jet printing head, ink-jet head and ink-jet printing apparatus
EP0964440A3 (en) * 1998-06-11 2000-05-24 Canon Kabushiki Kaisha Etching method for processing substrate, dry etching method for polyetheramide resin layer, production method of ink-jet printing head, ink-jet head and ink-jet printing apparatus
US6379571B1 (en) * 1998-06-11 2002-04-30 Canon Kabushiki Kaisha Etching method for processing substrate, dry etching method for polyetheramide resin layer, production method of ink-jet printing head, ink-jet head and ink-jet printing apparatus
EP1309000A2 (en) * 2001-10-30 2003-05-07 Trw Inc. Via formation in polymers
EP1309000A3 (en) * 2001-10-30 2004-05-12 Northrop Grumman Corporation Via formation in polymers

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