JPS5490032A - Plasma etching method - Google Patents

Plasma etching method

Info

Publication number
JPS5490032A
JPS5490032A JP15835877A JP15835877A JPS5490032A JP S5490032 A JPS5490032 A JP S5490032A JP 15835877 A JP15835877 A JP 15835877A JP 15835877 A JP15835877 A JP 15835877A JP S5490032 A JPS5490032 A JP S5490032A
Authority
JP
Japan
Prior art keywords
etching
injected
base plate
halogen ion
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP15835877A
Other languages
Japanese (ja)
Inventor
Tatsuya Enomoto
Shigeji Kinoshita
Katsuhiro Tsukamoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP15835877A priority Critical patent/JPS5490032A/en
Publication of JPS5490032A publication Critical patent/JPS5490032A/en
Pending legal-status Critical Current

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Abstract

PURPOSE: To perform etching with faster speed without unevenness by the procedure in which a halogen ion or a halide ion is injected in advance into the layer to be removed by etching of semiconductor, metal, or insulating material and then it is subjected to a plasma etching treatment.
CONSTITUTION: The main face 3a of the Si base plate 3, for example, is provided with the photo resist 9 selectively, and then a halogen ion, e.g., F+, etc., is injected into a depth corresponding to the etching depth of the base plate 3 to form the halogen ion-injected layer 10. The Si-base plate 3 with the injected layer 10 is put in a plasma-etching apparatus and then subjected to a gas plasma etching treatment by CF4 gas, using the photo resist 9 as a mask to form a plural number of the grooves 11. Thus, the unevenness of the depths between the plural grooves 11 can be greatly reduced compared to the conventional methods and also the etching speed can be hastened.
COPYRIGHT: (C)1979,JPO&Japio
JP15835877A 1977-12-28 1977-12-28 Plasma etching method Pending JPS5490032A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15835877A JPS5490032A (en) 1977-12-28 1977-12-28 Plasma etching method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15835877A JPS5490032A (en) 1977-12-28 1977-12-28 Plasma etching method

Publications (1)

Publication Number Publication Date
JPS5490032A true JPS5490032A (en) 1979-07-17

Family

ID=15669915

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15835877A Pending JPS5490032A (en) 1977-12-28 1977-12-28 Plasma etching method

Country Status (1)

Country Link
JP (1) JPS5490032A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56133835A (en) * 1980-03-24 1981-10-20 Nec Home Electronics Ltd Manufacture of semiconductor device
JPS5789225A (en) * 1980-08-25 1982-06-03 Gen Electric Method of rapidly isolating and diffusing
JPS584923A (en) * 1981-06-30 1983-01-12 Fujitsu Ltd Forming method of selective stacked-layer using ion beam radiation
JPS6265320A (en) * 1985-09-14 1987-03-24 Agency Of Ind Science & Technol Manufacture of semiconductor crystal
US6957683B2 (en) 1997-11-04 2005-10-25 Toti Andrew J Spring drive system and window cover

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56133835A (en) * 1980-03-24 1981-10-20 Nec Home Electronics Ltd Manufacture of semiconductor device
JPS5789225A (en) * 1980-08-25 1982-06-03 Gen Electric Method of rapidly isolating and diffusing
JPH0210576B2 (en) * 1980-08-25 1990-03-08 Gen Electric
JPS584923A (en) * 1981-06-30 1983-01-12 Fujitsu Ltd Forming method of selective stacked-layer using ion beam radiation
JPH0412024B2 (en) * 1981-06-30 1992-03-03 Fujitsu Ltd
JPS6265320A (en) * 1985-09-14 1987-03-24 Agency Of Ind Science & Technol Manufacture of semiconductor crystal
JPH051973B2 (en) * 1985-09-14 1993-01-11 Kogyo Gijutsuin
US6957683B2 (en) 1997-11-04 2005-10-25 Toti Andrew J Spring drive system and window cover
US8887788B2 (en) 1997-11-04 2014-11-18 Russell L. Hinckley, SR. Methods for operating window covers

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