JPS5787134A - Local etching method - Google Patents

Local etching method

Info

Publication number
JPS5787134A
JPS5787134A JP16356580A JP16356580A JPS5787134A JP S5787134 A JPS5787134 A JP S5787134A JP 16356580 A JP16356580 A JP 16356580A JP 16356580 A JP16356580 A JP 16356580A JP S5787134 A JPS5787134 A JP S5787134A
Authority
JP
Japan
Prior art keywords
ion
injection
etched
stages
break
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP16356580A
Other languages
Japanese (ja)
Inventor
Matsuo Ichikawa
Seiichi Iwamatsu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Epson Corp
Suwa Seikosha KK
Original Assignee
Seiko Epson Corp
Suwa Seikosha KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Epson Corp, Suwa Seikosha KK filed Critical Seiko Epson Corp
Priority to JP16356580A priority Critical patent/JPS5787134A/en
Publication of JPS5787134A publication Critical patent/JPS5787134A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
  • Weting (AREA)

Abstract

PURPOSE:To prevent a break at stages of a pattern by controlling bevel angle at the region to be etched adjusting the amount and the depth of ion injection on the surface of SiO2 film. CONSTITUTION:When forming a injection layer 5 by injecting P ion in an SiO2 film on an Si substrate, the etching of the layer 5 progresses at higher speed. If the SiO2 is etched with a resist mask 3, the etching liquid impregnates into the interface of the mask and a bevel angle of 45 deg. may be formed which prevents a break at stages of a pattern. B and Ar ion or the like, besides P, may be used. The angle of the bevel can be adjusted by the depth and the amount of the injection.
JP16356580A 1980-11-20 1980-11-20 Local etching method Pending JPS5787134A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP16356580A JPS5787134A (en) 1980-11-20 1980-11-20 Local etching method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16356580A JPS5787134A (en) 1980-11-20 1980-11-20 Local etching method

Publications (1)

Publication Number Publication Date
JPS5787134A true JPS5787134A (en) 1982-05-31

Family

ID=15776314

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16356580A Pending JPS5787134A (en) 1980-11-20 1980-11-20 Local etching method

Country Status (1)

Country Link
JP (1) JPS5787134A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61116842A (en) * 1984-11-12 1986-06-04 Mitsubishi Electric Corp Manufacture of semiconductor device
JPS6328039A (en) * 1986-07-22 1988-02-05 Fuji Electric Co Ltd Manufacture of semiconductor element
JP2011243657A (en) * 2010-05-14 2011-12-01 Mitsumi Electric Co Ltd Semiconductor device manufacturing method

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61116842A (en) * 1984-11-12 1986-06-04 Mitsubishi Electric Corp Manufacture of semiconductor device
JPS6328039A (en) * 1986-07-22 1988-02-05 Fuji Electric Co Ltd Manufacture of semiconductor element
JP2011243657A (en) * 2010-05-14 2011-12-01 Mitsumi Electric Co Ltd Semiconductor device manufacturing method

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