JPS6328039A - Manufacture of semiconductor element - Google Patents

Manufacture of semiconductor element

Info

Publication number
JPS6328039A
JPS6328039A JP17241086A JP17241086A JPS6328039A JP S6328039 A JPS6328039 A JP S6328039A JP 17241086 A JP17241086 A JP 17241086A JP 17241086 A JP17241086 A JP 17241086A JP S6328039 A JPS6328039 A JP S6328039A
Authority
JP
Japan
Prior art keywords
film
insulating film
coated
pattern
resist
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP17241086A
Other languages
Japanese (ja)
Inventor
Kenya Sakurai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fuji Electric Co Ltd
Original Assignee
Fuji Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fuji Electric Co Ltd filed Critical Fuji Electric Co Ltd
Priority to JP17241086A priority Critical patent/JPS6328039A/en
Publication of JPS6328039A publication Critical patent/JPS6328039A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE: To form an arbitrary oblique surface on the edge of an insulating film thereby to improve the step coverage of a metal electrode film thereon by implanting ions to the surface layer of an insulating film before forming a pattern.
CONSTITUTION: After a whole silicon substrate 1 is coated with an insulating film 2, such as an oxide film, a PSG film, ions 3 are implanted to the whole surface. Then, after the film 2 is coated with resist, a pattern of a resist film 4 is formed by photoprocessing. Then, when the film 2 is etched, since the surface layer of the insulating film is damaged by ion implanting, an oblique surface 5 is formed on the edge of the remaining film 2. Thus, the step coverage of the electrode metal film coated on the insulating film can be improved.
COPYRIGHT: (C)1988,JPO&Japio
JP17241086A 1986-07-22 1986-07-22 Manufacture of semiconductor element Pending JPS6328039A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP17241086A JPS6328039A (en) 1986-07-22 1986-07-22 Manufacture of semiconductor element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP17241086A JPS6328039A (en) 1986-07-22 1986-07-22 Manufacture of semiconductor element

Publications (1)

Publication Number Publication Date
JPS6328039A true JPS6328039A (en) 1988-02-05

Family

ID=15941439

Family Applications (1)

Application Number Title Priority Date Filing Date
JP17241086A Pending JPS6328039A (en) 1986-07-22 1986-07-22 Manufacture of semiconductor element

Country Status (1)

Country Link
JP (1) JPS6328039A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01312098A (en) * 1988-06-10 1989-12-15 Sumitomo Metal Ind Ltd Molten salt electroplating apparatus having superior durability

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5787134A (en) * 1980-11-20 1982-05-31 Seiko Epson Corp Local etching method
JPS6055631A (en) * 1983-09-07 1985-03-30 Oki Electric Ind Co Ltd Preparation of semiconductor device
JPS60240131A (en) * 1984-05-14 1985-11-29 Toshiba Corp Manufacture of semiconductor device
JPS6140035A (en) * 1984-07-31 1986-02-26 Ricoh Co Ltd Manufacture of semiconductor device
JPS61114536A (en) * 1984-11-09 1986-06-02 Nec Corp Manufacture of semiconductor device
JPS61116842A (en) * 1984-11-12 1986-06-04 Mitsubishi Electric Corp Manufacture of semiconductor device

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5787134A (en) * 1980-11-20 1982-05-31 Seiko Epson Corp Local etching method
JPS6055631A (en) * 1983-09-07 1985-03-30 Oki Electric Ind Co Ltd Preparation of semiconductor device
JPS60240131A (en) * 1984-05-14 1985-11-29 Toshiba Corp Manufacture of semiconductor device
JPS6140035A (en) * 1984-07-31 1986-02-26 Ricoh Co Ltd Manufacture of semiconductor device
JPS61114536A (en) * 1984-11-09 1986-06-02 Nec Corp Manufacture of semiconductor device
JPS61116842A (en) * 1984-11-12 1986-06-04 Mitsubishi Electric Corp Manufacture of semiconductor device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01312098A (en) * 1988-06-10 1989-12-15 Sumitomo Metal Ind Ltd Molten salt electroplating apparatus having superior durability

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