JPS6055631A - Preparation of semiconductor device - Google Patents

Preparation of semiconductor device

Info

Publication number
JPS6055631A
JPS6055631A JP16317383A JP16317383A JPS6055631A JP S6055631 A JPS6055631 A JP S6055631A JP 16317383 A JP16317383 A JP 16317383A JP 16317383 A JP16317383 A JP 16317383A JP S6055631 A JPS6055631 A JP S6055631A
Authority
JP
Japan
Prior art keywords
implanted
section
atoms
thin film
patterning
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP16317383A
Other languages
Japanese (ja)
Inventor
Hiroshi Tetsuda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Oki Electric Industry Co Ltd
Original Assignee
Oki Electric Industry Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Oki Electric Industry Co Ltd filed Critical Oki Electric Industry Co Ltd
Priority to JP16317383A priority Critical patent/JPS6055631A/en
Publication of JPS6055631A publication Critical patent/JPS6055631A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306Chemical or electrical treatment, e.g. electrolytic etching

Abstract

PURPOSE:To simplify a process of patterning, eliminating need of a resist, by selectively implanting atoms into a distributing or insulating layer and by patterning it utilizing the difference of etching rates between the implanted section and non-implanted section. CONSTITUTION:For patterning the thin film 202 for an electrode formed on a semiconductor substrate 201, atoms 203 are first implanted into the thin film 202 in a selective manner. The section 204 implanted with the atoms has a larger etching rate than the section 205 without atomic implantation. When the film is etched, the section without atomic implantation 205 also reduces its thickness by etching, while the section 204 implanted with atoms is etched more since it has a larger etching rate. Thus, the thin film 202 for an electrode can be patterned. The atomic species and the accelerating energy for implanting atoms are selected depending on the thickness and type of the thin film to be patterned so that the implanted atomic species do not enter into the semiconductor device.
JP16317383A 1983-09-07 1983-09-07 Preparation of semiconductor device Pending JPS6055631A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP16317383A JPS6055631A (en) 1983-09-07 1983-09-07 Preparation of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16317383A JPS6055631A (en) 1983-09-07 1983-09-07 Preparation of semiconductor device

Publications (1)

Publication Number Publication Date
JPS6055631A true JPS6055631A (en) 1985-03-30

Family

ID=15768625

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16317383A Pending JPS6055631A (en) 1983-09-07 1983-09-07 Preparation of semiconductor device

Country Status (1)

Country Link
JP (1) JPS6055631A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6328039A (en) * 1986-07-22 1988-02-05 Fuji Electric Co Ltd Manufacture of semiconductor element
US4956314A (en) * 1989-05-30 1990-09-11 Motorola, Inc. Differential etching of silicon nitride
KR100854162B1 (en) 2006-07-18 2008-08-26 가부시끼가이샤 도시바 Semiconductor device and method of manufacturing the same

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6328039A (en) * 1986-07-22 1988-02-05 Fuji Electric Co Ltd Manufacture of semiconductor element
US4956314A (en) * 1989-05-30 1990-09-11 Motorola, Inc. Differential etching of silicon nitride
KR100854162B1 (en) 2006-07-18 2008-08-26 가부시끼가이샤 도시바 Semiconductor device and method of manufacturing the same

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