KR960037879A - 실리콘 단결정의 종결정 - Google Patents

실리콘 단결정의 종결정 Download PDF

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Publication number
KR960037879A
KR960037879A KR1019960011936A KR19960011936A KR960037879A KR 960037879 A KR960037879 A KR 960037879A KR 1019960011936 A KR1019960011936 A KR 1019960011936A KR 19960011936 A KR19960011936 A KR 19960011936A KR 960037879 A KR960037879 A KR 960037879A
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South Korea
Prior art keywords
seed crystal
single crystal
tip
silicon single
silicon
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KR1019960011936A
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English (en)
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KR0163839B1 (ko
Inventor
노리히사 마찌다
히사시 후루야
Original Assignee
구미하시 요시유끼
미쯔비시 마테리알 가부시끼가이샤
가와이 겐이찌
미쯔비시 마테리알 실리콘 가부시끼가이샤
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Publication of KR960037879A publication Critical patent/KR960037879A/ko
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Publication of KR0163839B1 publication Critical patent/KR0163839B1/ko

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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/20—Controlling or regulating
    • C30B15/22—Stabilisation or shape controlling of the molten zone near the pulled crystal; Controlling the section of the crystal
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/36—Single-crystal growth by pulling from a melt, e.g. Czochralski method characterised by the seed, e.g. its crystallographic orientation
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
    • Y10T428/24479—Structurally defined web or sheet [e.g., overall dimension, etc.] including variation in thickness
    • Y10T428/2457—Parallel ribs and/or grooves
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
    • Y10T428/24942—Structurally defined web or sheet [e.g., overall dimension, etc.] including components having same physical characteristic in differing degree
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/31—Surface property or characteristic of web, sheet or block

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)

Abstract

본 발명은 종결정을 실리콘 융액에 접촉시킬 때 발생되는 종결정 선단부의 열응력을 완화시킴으로써, 전위 발생을 방지하고 종교(種絞) 공정 시간을 단축시키며 대중량의 단결정을 확실히 지지하는데 관한 것이다. 크조크랄스키(Czochralski)법으로 실리콘 용액으로부터 단결정을 성장시키는데 사용되는 실리콘 단결정의 종결정에 있어서, 종결정 선단부의 열 방사율이 0.5 이상 1.0 미만으로 형성된다. 종결정 선단부는 실리콘 융액에 접촉하는 부분의 일부 또는 전부, 또는 실리콘 융액에 접촉하는 부분 및 이 부분에 근접한 실리콘 융액에 접촉하지 않는 부분이다. 종결정 선단부의 표면에 폭 0.3 내지 1.0㎜인 세구를 1㎠당 16체 이상 형성시키거나, 종결정 선단부의 표면에 샌드블라스트 처리를 가함으로써 선단부의 표면에 미소 요곡을 형성시키거나, 또는 종결정 선단부의 표면에 산화 처리를 가함으로써 선단부의 표면에 SiO2막을 형성시키는 것이 바람직하다.

Description

실리콘 단결정의 종결정
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제1도는 본 발명의 실시예 1에 따른 종결정의 사시도, 제2도는 라인 A-A에 따른 종결정의 선단면도, 제3도는 본 발명의 실시예 2에 따른 종결정의 사시도, 제4도는 라인 B-B에 따른 종결정의 선단면도, 제5도는 본 발명의 실시예 3에 따른 종결정의 사시도.

Claims (9)

  1. 크조크랄스키(Czochralski)법으로 실리콘 융액으로부터 단결정을 성장시킬 때 사용되는 실리콘 단결정의 종결정에 있어서, 종결정 선단부의 열 방사율이 0.5 이상 1.0 미만인 실리콘 단결정의 종결정.
  2. 제1항에 있어서, 종결정 선단부가 실리콘 융액에 접촉하는 부분의 일부 또는 전부인 실리콘 단결정의 종결정.
  3. 제1항에 있어서, 종결정 선단부가 실리콘 융액에 접촉하는 부분 및 이 부분에 근접한 실리콘 융액에 접촉하지 않는 부분인 실리콘 단결정의 종결정.
  4. 제1항 내지 3항 중 어느 한 항에 있어서, 선단부 표면에 폭 0.3 내지 1.0㎜인 세구가 1㎠당 16체 이상 형성되는 실리콘 단결정의 종결정.
  5. 제1항 내지 3항 중 어느 한 항에 있어서, 선단부 표면에 샌드블라스트 처리를 가함으로써 상기 선단부 표면에 미소 요곡을 형성시키는 실리콘 단결정의 종결정.
  6. 제1항 내지 3항 중 어느 한 항에 있어서, 선단부 표면에 산화 처리를 가함으로써 상기 선단부 표면에 SiO2막을 형성시키는 실리콘 단결정의 종결정.
  7. 제4항에 있어서, 선단부 표면에 샌드블라스트 처리를 가함으로써 상기 선단부 표면에 미소 요곡을 형성시키는 실리콘 단결정의 종결정.
  8. 제4항에 있어서, 선단부 표면에 산화 처리를 가함으로써 상기 선단부 표면에 SiO2막을 형성시키는 실리콘 단결정의 종결정.
  9. 9. 제5항에 있어서, 선단부 표면에 산화 처리를 가함으로써 상기 선단부 표면에 SiO2막을 형성시키는 실리콘 단결정의 종결형.
    ※ 참고사항 : 최초출원 내용에 의하여 공개되는 것임.
KR1019960011936A 1995-04-20 1996-04-19 실리콘 단결정의 종결정 KR0163839B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP7095138A JP3004563B2 (ja) 1995-04-20 1995-04-20 シリコン単結晶の種結晶
JP95-095138 1995-04-20

Publications (2)

Publication Number Publication Date
KR960037879A true KR960037879A (ko) 1996-11-19
KR0163839B1 KR0163839B1 (ko) 1998-11-16

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US (1) US5714267A (ko)
JP (1) JP3004563B2 (ko)
KR (1) KR0163839B1 (ko)
TW (1) TW393525B (ko)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10203898A (ja) * 1997-01-17 1998-08-04 Shin Etsu Handotai Co Ltd シリコン単結晶の製造方法および種結晶
JP2000063197A (ja) 1998-08-07 2000-02-29 Shin Etsu Handotai Co Ltd 種結晶及び単結晶の製造方法
US6869477B2 (en) * 2000-02-22 2005-03-22 Memc Electronic Materials, Inc. Controlled neck growth process for single crystal silicon
US20030047130A1 (en) * 2001-08-29 2003-03-13 Memc Electronic Materials, Inc. Process for eliminating neck dislocations during czochralski crystal growth
US6866713B2 (en) * 2001-10-26 2005-03-15 Memc Electronic Materials, Inc. Seed crystals for pulling single crystal silicon
JP2003192488A (ja) * 2001-12-20 2003-07-09 Wacker Nsce Corp シリコン単結晶製造用種結晶及びシリコン単結晶の製造方法
BRPI0706659A2 (pt) * 2006-01-20 2011-04-05 Bp Corp North America Inc métodos de fabricação de silìcio moldado e de célula solar, células solares, corpos e wafers de silìcio multicristalinos ordenados geometricamente continuos
KR100882578B1 (ko) * 2007-11-29 2009-02-12 한국원자력연구원 쵸크랄스키 결정성장 장치 및 이를 이용한 염폐기물의정제방법
KR101043280B1 (ko) * 2008-09-17 2011-06-22 동의대학교 산학협력단 종자정 처리 방법 및 단결정 성장 방법

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4515755A (en) * 1981-05-11 1985-05-07 Toshiba Ceramics Co., Ltd. Apparatus for producing a silicon single crystal from a silicon melt
US5264189A (en) * 1988-02-23 1993-11-23 Mitsubishi Materials Corporation Apparatus for growing silicon crystals
US5290395A (en) * 1990-07-26 1994-03-01 Sumitomo Electric Industries, Ltd. Method of and apparatus for preparing single crystal
JP3077273B2 (ja) * 1991-07-30 2000-08-14 三菱マテリアル株式会社 単結晶引上装置

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KR0163839B1 (ko) 1998-11-16
US5714267A (en) 1998-02-03
JP3004563B2 (ja) 2000-01-31
JPH08290994A (ja) 1996-11-05
TW393525B (en) 2000-06-11

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