JPS641935B2 - - Google Patents
Info
- Publication number
- JPS641935B2 JPS641935B2 JP57220947A JP22094782A JPS641935B2 JP S641935 B2 JPS641935 B2 JP S641935B2 JP 57220947 A JP57220947 A JP 57220947A JP 22094782 A JP22094782 A JP 22094782A JP S641935 B2 JPS641935 B2 JP S641935B2
- Authority
- JP
- Japan
- Prior art keywords
- film
- polycrystalline silicon
- glass layer
- deposited
- silicon dioxide
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Landscapes
- Local Oxidation Of Silicon (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57220947A JPS59110136A (ja) | 1982-12-15 | 1982-12-15 | 半導体装置の製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57220947A JPS59110136A (ja) | 1982-12-15 | 1982-12-15 | 半導体装置の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS59110136A JPS59110136A (ja) | 1984-06-26 |
| JPS641935B2 true JPS641935B2 (OSRAM) | 1989-01-13 |
Family
ID=16759040
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP57220947A Granted JPS59110136A (ja) | 1982-12-15 | 1982-12-15 | 半導体装置の製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS59110136A (OSRAM) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61251054A (ja) * | 1985-04-27 | 1986-11-08 | Pioneer Electronic Corp | 半導体装置の製造方法 |
| JPS63217645A (ja) * | 1987-03-06 | 1988-09-09 | Nec Corp | 多層金属配線を有する半導体装置 |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS54111772A (en) * | 1978-02-22 | 1979-09-01 | Fujitsu Ltd | Manufacture for semiconductor device |
| JPS54156469A (en) * | 1978-05-30 | 1979-12-10 | Nec Corp | Manufacture for integrated circuit device |
| US4319260A (en) * | 1979-09-05 | 1982-03-09 | Texas Instruments Incorporated | Multilevel interconnect system for high density silicon gate field effect transistors |
-
1982
- 1982-12-15 JP JP57220947A patent/JPS59110136A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS59110136A (ja) | 1984-06-26 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US4525733A (en) | Patterning method for reducing hillock density in thin metal films and a structure produced thereby | |
| JPS58201362A (ja) | 半導体装置の製造方法 | |
| JPH02288359A (ja) | シリコン基板中に1つの導電タイプのウェルを形成する方法 | |
| JPS641935B2 (OSRAM) | ||
| JPH0473296B2 (OSRAM) | ||
| JPH0831931A (ja) | 半導体装置およびその製造方法 | |
| JPS5922342A (ja) | 半導体装置の製造方法 | |
| JP2685373B2 (ja) | 不揮発性半導体記憶装置の製造方法 | |
| JPH02298074A (ja) | Mos型トランジスタの製造方法 | |
| JPS62235739A (ja) | 半導体装置の製造方法 | |
| JPS61239671A (ja) | 半導体記憶装置の製造方法 | |
| JPS6123363A (ja) | 半導体装置およびその製造方法 | |
| JPH0316150A (ja) | 半導体素子の製造方法 | |
| JPS60176272A (ja) | 半導体記憶装置の製造方法 | |
| JPS59111367A (ja) | 半導体装置の製造方法 | |
| JPS6154661A (ja) | 半導体装置の製造方法 | |
| JPS605074B2 (ja) | 半導体装置の製造方法 | |
| JPH0225075A (ja) | 半導体装置の製造方法 | |
| JPH0274031A (ja) | 半導体装置の製造方法 | |
| JPS607181A (ja) | 半導体装置の製造方法 | |
| JPH04348519A (ja) | 半導体装置の製造方法 | |
| JPH0254659B2 (OSRAM) | ||
| JPS5922348A (ja) | 半導体装置の製造方法 | |
| JPH0319224A (ja) | 半導体装置の製造方法 | |
| JPH07161816A (ja) | 半導体装置 |