JPS6414971A - Heterojunction field-effect transistor - Google Patents

Heterojunction field-effect transistor

Info

Publication number
JPS6414971A
JPS6414971A JP17171487A JP17171487A JPS6414971A JP S6414971 A JPS6414971 A JP S6414971A JP 17171487 A JP17171487 A JP 17171487A JP 17171487 A JP17171487 A JP 17171487A JP S6414971 A JPS6414971 A JP S6414971A
Authority
JP
Japan
Prior art keywords
layer
quantum well
heterojunction
undoped
thin film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP17171487A
Other languages
English (en)
Inventor
Yoshikazu Takano
Yoshinobu Sugiyama
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
National Institute of Advanced Industrial Science and Technology AIST
Original Assignee
Agency of Industrial Science and Technology
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agency of Industrial Science and Technology filed Critical Agency of Industrial Science and Technology
Priority to JP17171487A priority Critical patent/JPS6414971A/ja
Publication of JPS6414971A publication Critical patent/JPS6414971A/ja
Pending legal-status Critical Current

Links

Landscapes

  • Junction Field-Effect Transistors (AREA)
JP17171487A 1987-07-09 1987-07-09 Heterojunction field-effect transistor Pending JPS6414971A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP17171487A JPS6414971A (en) 1987-07-09 1987-07-09 Heterojunction field-effect transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP17171487A JPS6414971A (en) 1987-07-09 1987-07-09 Heterojunction field-effect transistor

Publications (1)

Publication Number Publication Date
JPS6414971A true JPS6414971A (en) 1989-01-19

Family

ID=15928315

Family Applications (1)

Application Number Title Priority Date Filing Date
JP17171487A Pending JPS6414971A (en) 1987-07-09 1987-07-09 Heterojunction field-effect transistor

Country Status (1)

Country Link
JP (1) JPS6414971A (ja)

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61144070A (ja) * 1984-12-18 1986-07-01 Fujitsu Ltd 半導体装置
JPS61158183A (ja) * 1984-12-29 1986-07-17 Fujitsu Ltd 電界効果型半導体装置

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61144070A (ja) * 1984-12-18 1986-07-01 Fujitsu Ltd 半導体装置
JPS61158183A (ja) * 1984-12-29 1986-07-17 Fujitsu Ltd 電界効果型半導体装置

Similar Documents

Publication Publication Date Title
GB1404996A (en) Transistor
US5965931A (en) Bipolar transistor having base region with coupled delta layers
KR860006843A (ko) 전계효과 반도체장치
JPS5688388A (en) Semiconductor laser device
JPS6414971A (en) Heterojunction field-effect transistor
JP3415608B2 (ja) ヘテロバイポーラトランジスタ
JPH01231371A (ja) バイポーラトランジスタ
JP2621854B2 (ja) 高移動度トランジスタ
JPS5676588A (en) Manufacture of semiconductor laser
JPS6457787A (en) Semiconductor laser device
JPS55125690A (en) Semiconductor laser
JPH04291934A (ja) 応力補償型シュード・モルフィック高電子移動度トランジスタ
JPS5339889A (en) Semiconductor device and its production
JPS5826539Y2 (ja) 半導体レ−ザ
JPS56111275A (en) Luminous semiconductor device
JPS56105625A (en) Manufacture of compound semiconductor thin film single crystal of high ratio resistance and low transition density
JPS5670676A (en) Luminous diode
JPS6421990A (en) Manufacture of semiconductor light-emitting device
JPS55117282A (en) 3[5 group compound semiconductor mosfet
JP2629652B2 (ja) 電界効果トランジスタ
JPS57139986A (en) Manufacure of semiconductor laser
JPS5723280A (en) Field effect type light detector
JPS56111276A (en) Luminous semiconductor device
JP2926895B2 (ja) 半導体装置の製造方法
JPS56162880A (en) Gaas semiconductor element