JPS639748B2 - - Google Patents

Info

Publication number
JPS639748B2
JPS639748B2 JP56096908A JP9690881A JPS639748B2 JP S639748 B2 JPS639748 B2 JP S639748B2 JP 56096908 A JP56096908 A JP 56096908A JP 9690881 A JP9690881 A JP 9690881A JP S639748 B2 JPS639748 B2 JP S639748B2
Authority
JP
Japan
Prior art keywords
film
insulating film
conductor
insulating
polycrystalline silicon
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP56096908A
Other languages
English (en)
Japanese (ja)
Other versions
JPS57211251A (en
Inventor
Yoshitaka Sasaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Shibaura Electric Co Ltd filed Critical Tokyo Shibaura Electric Co Ltd
Priority to JP56096908A priority Critical patent/JPS57211251A/ja
Priority to US06/389,939 priority patent/US4625391A/en
Priority to DE8282105505T priority patent/DE3277345D1/de
Priority to EP82105505A priority patent/EP0070402B1/en
Publication of JPS57211251A publication Critical patent/JPS57211251A/ja
Publication of JPS639748B2 publication Critical patent/JPS639748B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H10W20/0698—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/0212—Manufacture or treatment of FETs having insulated gates [IGFET] using self-aligned silicidation
    • H10D64/0112—
    • H10P14/414—
    • H10P32/302—
    • H10W20/065—

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Local Oxidation Of Silicon (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
JP56096908A 1981-06-23 1981-06-23 Manufacture of semiconductor integrated circuit Granted JPS57211251A (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP56096908A JPS57211251A (en) 1981-06-23 1981-06-23 Manufacture of semiconductor integrated circuit
US06/389,939 US4625391A (en) 1981-06-23 1982-06-18 Semiconductor device and method for manufacturing the same
DE8282105505T DE3277345D1 (en) 1981-06-23 1982-06-23 Method of forming electrically conductive patterns on a semiconductor device, and a semiconductor device manufactured by the method
EP82105505A EP0070402B1 (en) 1981-06-23 1982-06-23 Method of forming electrically conductive patterns on a semiconductor device, and a semiconductor device manufactured by the method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56096908A JPS57211251A (en) 1981-06-23 1981-06-23 Manufacture of semiconductor integrated circuit

Publications (2)

Publication Number Publication Date
JPS57211251A JPS57211251A (en) 1982-12-25
JPS639748B2 true JPS639748B2 (index.php) 1988-03-01

Family

ID=14177454

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56096908A Granted JPS57211251A (en) 1981-06-23 1981-06-23 Manufacture of semiconductor integrated circuit

Country Status (1)

Country Link
JP (1) JPS57211251A (index.php)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61274359A (ja) * 1985-04-01 1986-12-04 フエアチヤイルド　セミコンダクタ　コ−ポレ−シヨン 小型コンタクト無しｒａｍセル
JPH0799745B2 (ja) * 1985-09-30 1995-10-25 日本電気株式会社 半導体装置の製造方法

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54127688A (en) * 1978-03-28 1979-10-03 Cho Lsi Gijutsu Kenkyu Kumiai Method of fabricating semiconductor
JPS54154966A (en) * 1978-05-29 1979-12-06 Nippon Telegr & Teleph Corp <Ntt> Semiconductor electron device

Also Published As

Publication number Publication date
JPS57211251A (en) 1982-12-25

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