JPS6387771A - 電界効果トランジスタ - Google Patents

電界効果トランジスタ

Info

Publication number
JPS6387771A
JPS6387771A JP62178224A JP17822487A JPS6387771A JP S6387771 A JPS6387771 A JP S6387771A JP 62178224 A JP62178224 A JP 62178224A JP 17822487 A JP17822487 A JP 17822487A JP S6387771 A JPS6387771 A JP S6387771A
Authority
JP
Japan
Prior art keywords
type
regions
region
island region
gate electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP62178224A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0365026B2 (enExample
Inventor
Kiyoshi Sakai
潔 酒井
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP62178224A priority Critical patent/JPS6387771A/ja
Publication of JPS6387771A publication Critical patent/JPS6387771A/ja
Publication of JPH0365026B2 publication Critical patent/JPH0365026B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs

Landscapes

  • Junction Field-Effect Transistors (AREA)
JP62178224A 1987-07-17 1987-07-17 電界効果トランジスタ Granted JPS6387771A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62178224A JPS6387771A (ja) 1987-07-17 1987-07-17 電界効果トランジスタ

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62178224A JPS6387771A (ja) 1987-07-17 1987-07-17 電界効果トランジスタ

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP5023277A Division JPS53135284A (en) 1977-04-30 1977-04-30 Production of field effect transistor

Publications (2)

Publication Number Publication Date
JPS6387771A true JPS6387771A (ja) 1988-04-19
JPH0365026B2 JPH0365026B2 (enExample) 1991-10-09

Family

ID=16044759

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62178224A Granted JPS6387771A (ja) 1987-07-17 1987-07-17 電界効果トランジスタ

Country Status (1)

Country Link
JP (1) JPS6387771A (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003318397A (ja) * 2002-04-24 2003-11-07 Nissan Motor Co Ltd 電界効果トランジスタとその製造方法
EP1873838A4 (en) * 2005-04-22 2009-06-03 Rohm Co Ltd SEMICONDUCTOR COMPONENT AND MANUFACTURING METHOD THEREFOR

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5185381A (enExample) * 1975-01-24 1976-07-26 Hitachi Ltd
JPS5374385A (en) * 1976-12-15 1978-07-01 Hitachi Ltd Manufacture of field effect semiconductor device

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5185381A (enExample) * 1975-01-24 1976-07-26 Hitachi Ltd
JPS5374385A (en) * 1976-12-15 1978-07-01 Hitachi Ltd Manufacture of field effect semiconductor device

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003318397A (ja) * 2002-04-24 2003-11-07 Nissan Motor Co Ltd 電界効果トランジスタとその製造方法
EP1873838A4 (en) * 2005-04-22 2009-06-03 Rohm Co Ltd SEMICONDUCTOR COMPONENT AND MANUFACTURING METHOD THEREFOR
US7888712B2 (en) 2005-04-22 2011-02-15 Rohm Co., Ltd. Semiconductor device and method for manufacturing same

Also Published As

Publication number Publication date
JPH0365026B2 (enExample) 1991-10-09

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