JPS637020B2 - - Google Patents

Info

Publication number
JPS637020B2
JPS637020B2 JP55028333A JP2833380A JPS637020B2 JP S637020 B2 JPS637020 B2 JP S637020B2 JP 55028333 A JP55028333 A JP 55028333A JP 2833380 A JP2833380 A JP 2833380A JP S637020 B2 JPS637020 B2 JP S637020B2
Authority
JP
Japan
Prior art keywords
light
substrate
thin film
irradiating
bond
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP55028333A
Other languages
English (en)
Japanese (ja)
Other versions
JPS56124229A (en
Inventor
Shinichiro Ishihara
Koshiro Mori
Tsuneo Tanaka
Seiichi Nagata
Takashi Hirao
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP2833380A priority Critical patent/JPS56124229A/ja
Publication of JPS56124229A publication Critical patent/JPS56124229A/ja
Publication of JPS637020B2 publication Critical patent/JPS637020B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/517—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using a combination of discharges covered by two or more of groups C23C16/503 - C23C16/515
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/24—Deposition of silicon only
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/48—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Plasma & Fusion (AREA)
  • Physics & Mathematics (AREA)
  • Inorganic Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Photovoltaic Devices (AREA)
  • Drying Of Semiconductors (AREA)
JP2833380A 1980-03-05 1980-03-05 Manufacture of thin film Granted JPS56124229A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2833380A JPS56124229A (en) 1980-03-05 1980-03-05 Manufacture of thin film

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2833380A JPS56124229A (en) 1980-03-05 1980-03-05 Manufacture of thin film

Publications (2)

Publication Number Publication Date
JPS56124229A JPS56124229A (en) 1981-09-29
JPS637020B2 true JPS637020B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1988-02-15

Family

ID=12245675

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2833380A Granted JPS56124229A (en) 1980-03-05 1980-03-05 Manufacture of thin film

Country Status (1)

Country Link
JP (1) JPS56124229A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5823434A (ja) * 1981-08-04 1983-02-12 Kanegafuchi Chem Ind Co Ltd アモルフアスシリコン系半導体
JPS5973045A (ja) * 1982-10-19 1984-04-25 Inoue Japax Res Inc 表面被覆方法
JPS59127833A (ja) * 1983-01-12 1984-07-23 Agency Of Ind Science & Technol 励起気相析出法による薄膜の製造装置
JPS59177919A (ja) * 1983-03-28 1984-10-08 Nippon Telegr & Teleph Corp <Ntt> 薄膜の選択成長法
FR2548218B1 (fr) * 1983-06-29 1987-03-06 Pauleau Yves Procede de depot de couches minces par reaction chimique en phase gazeuse utilisant deux rayonnements differents
JPS6027121A (ja) * 1983-07-22 1985-02-12 Semiconductor Energy Lab Co Ltd 光ｃｖｄ装置
JPS6027122A (ja) * 1983-07-22 1985-02-12 Semiconductor Energy Lab Co Ltd 光プラズマ気相反応法
JPS6027123A (ja) * 1983-07-25 1985-02-12 Semiconductor Energy Lab Co Ltd 光プラズマ気相反応法
JPS6027767A (ja) * 1983-07-27 1985-02-12 Suzuki Motor Co Ltd 気化器の燃料調節装置
JPS60175411A (ja) * 1984-02-22 1985-09-09 Hitachi Ltd 半導体薄膜の製造方法及びその製造装置
US4505949A (en) * 1984-04-25 1985-03-19 Texas Instruments Incorporated Thin film deposition using plasma-generated source gas
JPH05190473A (ja) * 1992-06-03 1993-07-30 Semiconductor Energy Lab Co Ltd 光ｃｖｄ装置
CN102496663A (zh) * 2011-12-29 2012-06-13 普乐新能源（蚌埠）有限公司 降低非晶硅太阳能电池衰减率的方法

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5943815B2 (ja) * 1975-10-07 1984-10-24 富士通株式会社 エピタキシヤル成長法
JPS53103985A (en) * 1977-02-22 1978-09-09 Kokusai Electric Co Ltd Growing film forming method

Also Published As

Publication number Publication date
JPS56124229A (en) 1981-09-29

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