JPS6364909B2 - - Google Patents
Info
- Publication number
- JPS6364909B2 JPS6364909B2 JP55180381A JP18038180A JPS6364909B2 JP S6364909 B2 JPS6364909 B2 JP S6364909B2 JP 55180381 A JP55180381 A JP 55180381A JP 18038180 A JP18038180 A JP 18038180A JP S6364909 B2 JPS6364909 B2 JP S6364909B2
- Authority
- JP
- Japan
- Prior art keywords
- region
- substrate
- impurity concentration
- gate electrode
- under
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
- H10D62/351—Substrate regions of field-effect devices
- H10D62/357—Substrate regions of field-effect devices of FETs
- H10D62/364—Substrate regions of field-effect devices of FETs of IGFETs
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP55180381A JPS57104258A (en) | 1980-12-22 | 1980-12-22 | Metal oxide semiconductor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP55180381A JPS57104258A (en) | 1980-12-22 | 1980-12-22 | Metal oxide semiconductor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS57104258A JPS57104258A (en) | 1982-06-29 |
| JPS6364909B2 true JPS6364909B2 (cs) | 1988-12-14 |
Family
ID=16082234
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP55180381A Granted JPS57104258A (en) | 1980-12-22 | 1980-12-22 | Metal oxide semiconductor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS57104258A (cs) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01162372A (ja) * | 1987-12-18 | 1989-06-26 | Matsushita Electron Corp | Ｍｉｓ型トランジスタ |
| JP2650456B2 (ja) * | 1989-07-04 | 1997-09-03 | 富士電機株式会社 | Ｍｏｓ半導体装置 |
-
1980
- 1980-12-22 JP JP55180381A patent/JPS57104258A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS57104258A (en) | 1982-06-29 |
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