JPS622705B2 - - Google Patents

Info

Publication number
JPS622705B2
JPS622705B2 JP55037702A JP3770280A JPS622705B2 JP S622705 B2 JPS622705 B2 JP S622705B2 JP 55037702 A JP55037702 A JP 55037702A JP 3770280 A JP3770280 A JP 3770280A JP S622705 B2 JPS622705 B2 JP S622705B2
Authority
JP
Japan
Prior art keywords
region
resistance layer
drain
source
electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP55037702A
Other languages
English (en)
Japanese (ja)
Other versions
JPS56133870A (en
Inventor
Tsutomu Ashida
Kyotoshi Nakagawa
Katsumasa Fujii
Yasuo Torimaru
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Priority to JP3770280A priority Critical patent/JPS56133870A/ja
Publication of JPS56133870A publication Critical patent/JPS56133870A/ja
Publication of JPS622705B2 publication Critical patent/JPS622705B2/ja
Priority to US07/277,440 priority patent/US4947232A/en
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/111—Field plates
    • H10D64/115—Resistive field plates, e.g. semi-insulating field plates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/601—Insulated-gate field-effect transistors [IGFET] having lightly-doped drain or source extensions, e.g. LDD IGFETs or DDD IGFETs 
    • H10D30/603—Insulated-gate field-effect transistors [IGFET] having lightly-doped drain or source extensions, e.g. LDD IGFETs or DDD IGFETs  having asymmetry in the channel direction, e.g. lateral high-voltage MISFETs having drain offset region or extended drain IGFETs [EDMOS]

Landscapes

  • Semiconductor Integrated Circuits (AREA)
  • Bipolar Transistors (AREA)
JP3770280A 1980-03-22 1980-03-22 Mos field effect semiconductor device with high breakdown voltage Granted JPS56133870A (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP3770280A JPS56133870A (en) 1980-03-22 1980-03-22 Mos field effect semiconductor device with high breakdown voltage
US07/277,440 US4947232A (en) 1980-03-22 1988-11-28 High voltage MOS transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3770280A JPS56133870A (en) 1980-03-22 1980-03-22 Mos field effect semiconductor device with high breakdown voltage

Publications (2)

Publication Number Publication Date
JPS56133870A JPS56133870A (en) 1981-10-20
JPS622705B2 true JPS622705B2 (cs) 1987-01-21

Family

ID=12504852

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3770280A Granted JPS56133870A (en) 1980-03-22 1980-03-22 Mos field effect semiconductor device with high breakdown voltage

Country Status (1)

Country Link
JP (1) JPS56133870A (cs)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0618251B2 (ja) * 1983-02-23 1994-03-09 株式会社東芝 半導体装置
US5374843A (en) * 1991-05-06 1994-12-20 Silinconix, Inc. Lightly-doped drain MOSFET with improved breakdown characteristics
JPH0788141A (ja) * 1993-06-30 1995-04-04 San Beam:Kk 回転椅子

Also Published As

Publication number Publication date
JPS56133870A (en) 1981-10-20

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