JPS6364051B2 - - Google Patents
Info
- Publication number
- JPS6364051B2 JPS6364051B2 JP58042254A JP4225483A JPS6364051B2 JP S6364051 B2 JPS6364051 B2 JP S6364051B2 JP 58042254 A JP58042254 A JP 58042254A JP 4225483 A JP4225483 A JP 4225483A JP S6364051 B2 JPS6364051 B2 JP S6364051B2
- Authority
- JP
- Japan
- Prior art keywords
- gap
- wafer
- focus mechanism
- differential pressure
- semiconductor wafer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 claims description 10
- 230000003287 optical effect Effects 0.000 claims description 5
- 238000004519 manufacturing process Methods 0.000 claims description 4
- 238000010586 diagram Methods 0.000 description 6
- 238000001514 detection method Methods 0.000 description 4
- 238000012935 Averaging Methods 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 238000007664 blowing Methods 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 1
- 229910052753 mercury Inorganic materials 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
- G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
- G03F9/7003—Alignment type or strategy, e.g. leveling, global alignment
- G03F9/7023—Aligning or positioning in direction perpendicular to substrate surface
- G03F9/7026—Focusing
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
- G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
- G03F9/7049—Technique, e.g. interferometric
- G03F9/7053—Non-optical, e.g. mechanical, capacitive, using an electron beam, acoustic or thermal waves
- G03F9/7057—Gas flow, e.g. for focusing, leveling or gap setting
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Variable Magnification In Projection-Type Copying Machines (AREA)
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP58042254A JPS59169134A (ja) | 1983-03-16 | 1983-03-16 | 縮小投影露光装置 |
PCT/JP1984/000107 WO1987002178A1 (en) | 1983-03-16 | 1984-03-16 | Optical exposure apparatus |
US06/671,218 US4615614A (en) | 1983-03-16 | 1984-03-16 | Optical exposure apparatus |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP58042254A JPS59169134A (ja) | 1983-03-16 | 1983-03-16 | 縮小投影露光装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS59169134A JPS59169134A (ja) | 1984-09-25 |
JPS6364051B2 true JPS6364051B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 1988-12-09 |
Family
ID=12630884
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP58042254A Granted JPS59169134A (ja) | 1983-03-16 | 1983-03-16 | 縮小投影露光装置 |
Country Status (3)
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4714331A (en) * | 1985-03-25 | 1987-12-22 | Canon Kabushiki Kaisha | Method and apparatus for automatic focusing |
US5114223A (en) * | 1985-07-15 | 1992-05-19 | Canon Kabushiki Kaisha | Exposure method and apparatus |
JPH0760251B2 (ja) * | 1986-08-14 | 1995-06-28 | キヤノン株式会社 | 自動焦点合せ方法 |
JPS63220521A (ja) * | 1987-03-10 | 1988-09-13 | Canon Inc | 焦点合せ装置 |
US5087927A (en) * | 1990-01-31 | 1992-02-11 | Ateo Corporation | On-axis air gage focus system |
US5224374A (en) * | 1991-05-31 | 1993-07-06 | Texas Instruments Incorporated | Wafer proximity sensor |
US5163312A (en) * | 1991-05-31 | 1992-11-17 | Texas Instruments Incorporated | Wafer proximity sensor |
KR100727847B1 (ko) | 2005-09-07 | 2007-06-14 | 세메스 주식회사 | 기판 가장자리 노광 장치 |
KR100727848B1 (ko) | 2005-09-27 | 2007-06-14 | 세메스 주식회사 | 기판 가장자리 노광 장치 |
EP4614231A1 (en) * | 2024-03-05 | 2025-09-10 | Mycronic AB | Objective lens arrangement |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2330030A1 (fr) * | 1975-10-31 | 1977-05-27 | Thomson Csf | Nouvel appareil photorepeteur de masques de haute precision |
JPS52143775A (en) * | 1976-05-26 | 1977-11-30 | Hitachi Ltd | Reduction projecting and printing method and reduction projecting and printing apparatus used in this method |
FR2371716A1 (fr) * | 1976-11-19 | 1978-06-16 | Thomson Csf | Appareil photorepeteur de masques |
-
1983
- 1983-03-16 JP JP58042254A patent/JPS59169134A/ja active Granted
-
1984
- 1984-03-16 WO PCT/JP1984/000107 patent/WO1987002178A1/ja unknown
- 1984-03-16 US US06/671,218 patent/US4615614A/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
WO1987002178A1 (en) | 1987-04-09 |
US4615614A (en) | 1986-10-07 |
JPS59169134A (ja) | 1984-09-25 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN101344727B (zh) | 一种调焦调平探测装置及方法 | |
JPH043008A (ja) | 投影露光方法およびその装置 | |
JPH0419545B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | ||
JPS6364051B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | ||
JP4269393B2 (ja) | アライメントマーク及びアライメント方法 | |
JP3446287B2 (ja) | 縮小投影露光装置と光軸ずれ補正方法 | |
JPS5983165A (ja) | 照明光源装置 | |
JP3036081B2 (ja) | 電子線描画装置及び方法、及びその試料面高さ測定装置 | |
JPH08162397A (ja) | 投影露光装置及びそれを用いた半導体デバイスの製造方法 | |
JPS587823A (ja) | アライメント方法およびその装置 | |
JP3823477B2 (ja) | 画像計測装置 | |
JPH0511257B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | ||
JP3318440B2 (ja) | ステージ原点位置決定方法及び装置並びにステージ位置検出器原点決定方法及び装置 | |
JPH0722101B2 (ja) | 投影型露光装置用遮風装置 | |
JP2005322748A (ja) | 重ね合わせ誤差測定方法、重ね合わせ誤差測定装置、及び半導体デバイスの製造方法 | |
JP2525237B2 (ja) | 相対位置検出装置 | |
JPS6381818A (ja) | 投影光学装置 | |
KR0161439B1 (ko) | 노광장치의 렌즈 왜곡 측정장치 | |
JP2977307B2 (ja) | 試料面高さ測定方法 | |
JPS5913324A (ja) | 縮小投影露光装置 | |
JPH01292206A (ja) | 物体の表面状態測定装置及び表面の高さ測定装置 | |
JPH039210A (ja) | 測距装置 | |
JPH10289866A (ja) | シンクロトロン放射光強度測定器および該強度測定器を備えたx線露光装置 | |
JPH09186065A (ja) | 露光装置 | |
JPH10270304A (ja) | 露光パターンの評価方法、露光パターンの評価用マーク及び露光パターンの評価装置 |