KR100727848B1 - 기판 가장자리 노광 장치 - Google Patents
기판 가장자리 노광 장치 Download PDFInfo
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- KR100727848B1 KR100727848B1 KR1020050089806A KR20050089806A KR100727848B1 KR 100727848 B1 KR100727848 B1 KR 100727848B1 KR 1020050089806 A KR1020050089806 A KR 1020050089806A KR 20050089806 A KR20050089806 A KR 20050089806A KR 100727848 B1 KR100727848 B1 KR 100727848B1
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2022—Multi-step exposure, e.g. hybrid; backside exposure; blanket exposure, e.g. for image reversal; edge exposure, e.g. for edge bead removal; corrective exposure
- G03F7/2026—Multi-step exposure, e.g. hybrid; backside exposure; blanket exposure, e.g. for image reversal; edge exposure, e.g. for edge bead removal; corrective exposure for the removal of unwanted material, e.g. image or background correction
- G03F7/2028—Multi-step exposure, e.g. hybrid; backside exposure; blanket exposure, e.g. for image reversal; edge exposure, e.g. for edge bead removal; corrective exposure for the removal of unwanted material, e.g. image or background correction of an edge bead on wafers
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2002—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
- G03F7/2004—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image characterised by the use of a particular light source, e.g. fluorescent lamps or deep UV light
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70008—Production of exposure light, i.e. light sources
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70275—Multiple projection paths, e.g. array of projection systems, microlens projection systems or tandem projection systems
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70908—Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
- G03F7/70933—Purge, e.g. exchanging fluid or gas to remove pollutants
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- Epidemiology (AREA)
- Public Health (AREA)
- Life Sciences & Earth Sciences (AREA)
- Atmospheric Sciences (AREA)
- Engineering & Computer Science (AREA)
- Environmental & Geological Engineering (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Abstract
Description
Claims (8)
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- 기판 가장자리의 포토레지스트를 노광하는 장치에 있어서:광원과;상기 광원으로부터 빛을 받아 기판의 가장자리로 빛을 조사하는 렌즈부를 포함하되;상기 렌즈부는다수의 광학부재들이 배치되고, 상기 광학부재들 사이에 형성되는 공간들과, 상기 공간들을 연결하는 통로들을 갖는 원통형의 하우징과;기판 가장자리를 노광하는 과정에서 발생되는 이물질들이 기판의 가장자리와 인접한 상기 하우징 안으로 유입되는 것을 방지하기 위한 퍼지부를 포함하며,상기 퍼지부는상기 하우징의 공간들 중 적어도 하나의 공간으로 퍼지용 기체를 공급하는 공급부;상기 하우징의 공간들을 경유한 퍼지용 기체가 상기 하우징의 끝단부에서 기판의 중심방향에서 가장자리 방향으로 분사되도록 상기 하우징에 형성되는 제1샤워홀들; 및상기 하우징의 공간들을 경유한 퍼지용 기체가 상기 하우징의 최하단에 위치된 광학부재 아래에서 분사되도록 상기 하우징에 형성되는 제2샤워홀들을 더 포함하는 것을 특징으로 하는 기판 가장자리 노광 장치.
- 삭제
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Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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KR1020050089806A KR100727848B1 (ko) | 2005-09-27 | 2005-09-27 | 기판 가장자리 노광 장치 |
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KR1020050089806A KR100727848B1 (ko) | 2005-09-27 | 2005-09-27 | 기판 가장자리 노광 장치 |
Publications (2)
Publication Number | Publication Date |
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KR20070035213A KR20070035213A (ko) | 2007-03-30 |
KR100727848B1 true KR100727848B1 (ko) | 2007-06-14 |
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KR1020050089806A KR100727848B1 (ko) | 2005-09-27 | 2005-09-27 | 기판 가장자리 노광 장치 |
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Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4615614A (en) | 1983-03-16 | 1986-10-07 | Hitachi, Ltd. | Optical exposure apparatus |
JP2001319843A (ja) | 2000-05-10 | 2001-11-16 | Nec Yamaguchi Ltd | ウェハー周辺露光装置および露光方法 |
KR100333235B1 (ko) * | 1993-09-02 | 2002-11-18 | 가부시키가이샤 니콘 | 광학조사장치 |
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2005
- 2005-09-27 KR KR1020050089806A patent/KR100727848B1/ko active IP Right Grant
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4615614A (en) | 1983-03-16 | 1986-10-07 | Hitachi, Ltd. | Optical exposure apparatus |
KR100333235B1 (ko) * | 1993-09-02 | 2002-11-18 | 가부시키가이샤 니콘 | 광학조사장치 |
JP2001319843A (ja) | 2000-05-10 | 2001-11-16 | Nec Yamaguchi Ltd | ウェハー周辺露光装置および露光方法 |
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KR20070035213A (ko) | 2007-03-30 |
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