JPS6362114B2 - - Google Patents

Info

Publication number
JPS6362114B2
JPS6362114B2 JP58053487A JP5348783A JPS6362114B2 JP S6362114 B2 JPS6362114 B2 JP S6362114B2 JP 58053487 A JP58053487 A JP 58053487A JP 5348783 A JP5348783 A JP 5348783A JP S6362114 B2 JPS6362114 B2 JP S6362114B2
Authority
JP
Japan
Prior art keywords
gaas
active layer
layer
gate electrode
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP58053487A
Other languages
English (en)
Japanese (ja)
Other versions
JPS59181067A (ja
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP58053487A priority Critical patent/JPS59181067A/ja
Publication of JPS59181067A publication Critical patent/JPS59181067A/ja
Publication of JPS6362114B2 publication Critical patent/JPS6362114B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/80—FETs having rectifying junction gate electrodes

Landscapes

  • Junction Field-Effect Transistors (AREA)
  • Drying Of Semiconductors (AREA)
JP58053487A 1983-03-31 1983-03-31 電界効果トランジスタの製造方法 Granted JPS59181067A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58053487A JPS59181067A (ja) 1983-03-31 1983-03-31 電界効果トランジスタの製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58053487A JPS59181067A (ja) 1983-03-31 1983-03-31 電界効果トランジスタの製造方法

Publications (2)

Publication Number Publication Date
JPS59181067A JPS59181067A (ja) 1984-10-15
JPS6362114B2 true JPS6362114B2 (enrdf_load_stackoverflow) 1988-12-01

Family

ID=12944197

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58053487A Granted JPS59181067A (ja) 1983-03-31 1983-03-31 電界効果トランジスタの製造方法

Country Status (1)

Country Link
JP (1) JPS59181067A (enrdf_load_stackoverflow)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02109673U (enrdf_load_stackoverflow) * 1989-02-17 1990-09-03

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4404732A (en) * 1981-12-07 1983-09-20 Ibm Corporation Self-aligned extended epitaxy mesfet fabrication process

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02109673U (enrdf_load_stackoverflow) * 1989-02-17 1990-09-03

Also Published As

Publication number Publication date
JPS59181067A (ja) 1984-10-15

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