JPH0434824B2 - - Google Patents

Info

Publication number
JPH0434824B2
JPH0434824B2 JP58157785A JP15778583A JPH0434824B2 JP H0434824 B2 JPH0434824 B2 JP H0434824B2 JP 58157785 A JP58157785 A JP 58157785A JP 15778583 A JP15778583 A JP 15778583A JP H0434824 B2 JPH0434824 B2 JP H0434824B2
Authority
JP
Japan
Prior art keywords
source
film
layer
thin film
germanium
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP58157785A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6050966A (ja
Inventor
Hiroshi Ishimura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Shibaura Electric Co Ltd filed Critical Tokyo Shibaura Electric Co Ltd
Priority to JP58157785A priority Critical patent/JPS6050966A/ja
Publication of JPS6050966A publication Critical patent/JPS6050966A/ja
Publication of JPH0434824B2 publication Critical patent/JPH0434824B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/80—FETs having rectifying junction gate electrodes
    • H10D30/87—FETs having Schottky gate electrodes, e.g. metal-semiconductor FETs [MESFET]

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Junction Field-Effect Transistors (AREA)
JP58157785A 1983-08-31 1983-08-31 電界効果トランジスタの製造方法 Granted JPS6050966A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58157785A JPS6050966A (ja) 1983-08-31 1983-08-31 電界効果トランジスタの製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58157785A JPS6050966A (ja) 1983-08-31 1983-08-31 電界効果トランジスタの製造方法

Publications (2)

Publication Number Publication Date
JPS6050966A JPS6050966A (ja) 1985-03-22
JPH0434824B2 true JPH0434824B2 (enrdf_load_stackoverflow) 1992-06-09

Family

ID=15657239

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58157785A Granted JPS6050966A (ja) 1983-08-31 1983-08-31 電界効果トランジスタの製造方法

Country Status (1)

Country Link
JP (1) JPS6050966A (enrdf_load_stackoverflow)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH079913B2 (ja) * 1985-07-01 1995-02-01 日本電信電話株式会社 電界効果トランジスタの製造方法
JPH0750781B2 (ja) * 1987-03-18 1995-05-31 富士通株式会社 化合物半導体集積回路装置

Also Published As

Publication number Publication date
JPS6050966A (ja) 1985-03-22

Similar Documents

Publication Publication Date Title
US4712291A (en) Process of fabricating TiW/Si self-aligned gate for GaAs MESFETs
JPH0434824B2 (enrdf_load_stackoverflow)
JPS61248570A (ja) Ｍｅｓｆｅｔ装置およびその製造方法
JPH0436459B2 (enrdf_load_stackoverflow)
JPS6160591B2 (enrdf_load_stackoverflow)
JPS62150888A (ja) 電界効果トランジスタの製造方法
JPS59193070A (ja) シヨツトキゲ−ト電界効果トランジスタの製造方法
JPS6050967A (ja) 電界効果トランジスタの製造方法
JPS6272175A (ja) 半導体装置の製造方法
JPS635571A (ja) 化合物半導体装置
JPS6362114B2 (enrdf_load_stackoverflow)
JPH01189960A (ja) 化合物半導体装置の製造方法
JPS6276780A (ja) 半導体装置の製造方法
JPS6038883A (ja) ショットキゲ−ト型ｆｅｔの製造方法
JPS5893290A (ja) シヨツトキバリア電界効果トランジスタの製造方法
JPS6396965A (ja) 半導体装置およびその製造方法
JPH04352333A (ja) 半導体装置の製造方法
JPH04122032A (ja) 電界効果トランジスタ
JPS6260268A (ja) 電界効果トランジスタの製造方法
JPH03283627A (ja) 電界効果型半導体装置の製造方法
JPS59113671A (ja) 電界効果トランジスタの製造方法
JPS6272176A (ja) 半導体装置の製造方法
JPH043102B2 (enrdf_load_stackoverflow)
JPH0332217B2 (enrdf_load_stackoverflow)
JPH01214161A (ja) 化合物半導体装置の製造方法