JPS59181067A - 電界効果トランジスタの製造方法 - Google Patents

電界効果トランジスタの製造方法

Info

Publication number
JPS59181067A
JPS59181067A JP58053487A JP5348783A JPS59181067A JP S59181067 A JPS59181067 A JP S59181067A JP 58053487 A JP58053487 A JP 58053487A JP 5348783 A JP5348783 A JP 5348783A JP S59181067 A JPS59181067 A JP S59181067A
Authority
JP
Japan
Prior art keywords
layer
electrode
source
drain
gaas
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP58053487A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6362114B2 (enrdf_load_stackoverflow
Inventor
Mikio Kanamori
金森　幹夫
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
National Institute of Advanced Industrial Science and Technology AIST
Original Assignee
Agency of Industrial Science and Technology
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Agency of Industrial Science and Technology filed Critical Agency of Industrial Science and Technology
Priority to JP58053487A priority Critical patent/JPS59181067A/ja
Publication of JPS59181067A publication Critical patent/JPS59181067A/ja
Publication of JPS6362114B2 publication Critical patent/JPS6362114B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/80—FETs having rectifying junction gate electrodes

Landscapes

  • Drying Of Semiconductors (AREA)
  • Junction Field-Effect Transistors (AREA)
JP58053487A 1983-03-31 1983-03-31 電界効果トランジスタの製造方法 Granted JPS59181067A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58053487A JPS59181067A (ja) 1983-03-31 1983-03-31 電界効果トランジスタの製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58053487A JPS59181067A (ja) 1983-03-31 1983-03-31 電界効果トランジスタの製造方法

Publications (2)

Publication Number Publication Date
JPS59181067A true JPS59181067A (ja) 1984-10-15
JPS6362114B2 JPS6362114B2 (enrdf_load_stackoverflow) 1988-12-01

Family

ID=12944197

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58053487A Granted JPS59181067A (ja) 1983-03-31 1983-03-31 電界効果トランジスタの製造方法

Country Status (1)

Country Link
JP (1) JPS59181067A (enrdf_load_stackoverflow)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02109673U (enrdf_load_stackoverflow) * 1989-02-17 1990-09-03

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5898982A (ja) * 1981-12-07 1983-06-13 インタ−ナショナル　ビジネス　マシ−ンズ　コ−ポレ−ション 砒化ガリウムｍｅｓｆｅｔ素子の製造方法

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5898982A (ja) * 1981-12-07 1983-06-13 インタ−ナショナル　ビジネス　マシ−ンズ　コ−ポレ−ション 砒化ガリウムｍｅｓｆｅｔ素子の製造方法

Also Published As

Publication number Publication date
JPS6362114B2 (enrdf_load_stackoverflow) 1988-12-01

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