JPS634700B2 - - Google Patents
Info
- Publication number
- JPS634700B2 JPS634700B2 JP55189024A JP18902480A JPS634700B2 JP S634700 B2 JPS634700 B2 JP S634700B2 JP 55189024 A JP55189024 A JP 55189024A JP 18902480 A JP18902480 A JP 18902480A JP S634700 B2 JPS634700 B2 JP S634700B2
- Authority
- JP
- Japan
- Prior art keywords
- layer
- patterned
- pattern
- substrate
- oxidizing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H10D64/01328—
-
- H10P14/60—
Landscapes
- Formation Of Insulating Films (AREA)
- Drying Of Semiconductors (AREA)
Priority Applications (7)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP55189024A JPS57111032A (en) | 1980-12-26 | 1980-12-26 | Forming method for pattern |
| NLAANVRAGE8105661,A NL188432C (nl) | 1980-12-26 | 1981-12-16 | Werkwijze voor het vervaardigen van een mosfet. |
| US06/331,612 US4460413A (en) | 1980-12-26 | 1981-12-17 | Method of patterning device regions by oxidizing patterned aluminum layer |
| FR8123625A FR2497403B1 (fr) | 1980-12-26 | 1981-12-17 | Procede de formation de reseaux extremement fins en particulier pour la fabrication de transistors |
| GB8138219A GB2092373B (en) | 1980-12-26 | 1981-12-18 | A method of forming patterns |
| DE19813151915 DE3151915A1 (de) | 1980-12-26 | 1981-12-23 | Verfahren zum bilden von mustern oder schablonen |
| CA000393192A CA1186600A (en) | 1980-12-26 | 1981-12-24 | Method of forming patterns |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP55189024A JPS57111032A (en) | 1980-12-26 | 1980-12-26 | Forming method for pattern |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS57111032A JPS57111032A (en) | 1982-07-10 |
| JPS634700B2 true JPS634700B2 (cg-RX-API-DMAC10.html) | 1988-01-30 |
Family
ID=16234019
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP55189024A Granted JPS57111032A (en) | 1980-12-26 | 1980-12-26 | Forming method for pattern |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS57111032A (cg-RX-API-DMAC10.html) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5957450A (ja) * | 1982-09-27 | 1984-04-03 | Nec Corp | 半導体装置の素子分離方法 |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5212546A (en) * | 1975-07-21 | 1977-01-31 | Tektronix Inc | Parallel phase amplifier |
| JPS55163863A (en) * | 1979-06-07 | 1980-12-20 | Matsushita Electric Ind Co Ltd | Formation of wiring pattern |
-
1980
- 1980-12-26 JP JP55189024A patent/JPS57111032A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS57111032A (en) | 1982-07-10 |
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