JPS6337186B2 - - Google Patents

Info

Publication number
JPS6337186B2
JPS6337186B2 JP58160388A JP16038883A JPS6337186B2 JP S6337186 B2 JPS6337186 B2 JP S6337186B2 JP 58160388 A JP58160388 A JP 58160388A JP 16038883 A JP16038883 A JP 16038883A JP S6337186 B2 JPS6337186 B2 JP S6337186B2
Authority
JP
Japan
Prior art keywords
chamber
vacuum
substrate
loading
station
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP58160388A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6052574A (ja
Inventor
Hideki Tateishi
Tamotsu Shimizu
Susumu Aiuchi
Katsuhiro Iwashita
Hiroshi Nakamura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP58160388A priority Critical patent/JPS6052574A/ja
Priority to KR1019840005318A priority patent/KR890002837B1/ko
Priority to US06/645,671 priority patent/US4675096A/en
Priority to DE8484110398T priority patent/DE3483637D1/de
Priority to EP84110398A priority patent/EP0136562B1/en
Publication of JPS6052574A publication Critical patent/JPS6052574A/ja
Publication of JPS6337186B2 publication Critical patent/JPS6337186B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • C23C14/564—Means for minimising impurities in the coating chamber such as dust, moisture, residual gases
    • C23C14/566—Means for minimising impurities in the coating chamber such as dust, moisture, residual gases using a load-lock chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • C23C14/568—Transferring the substrates through a series of coating stations

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
  • ing And Chemical Polishing (AREA)
JP58160388A 1983-09-02 1983-09-02 連続スパツタ装置 Granted JPS6052574A (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP58160388A JPS6052574A (ja) 1983-09-02 1983-09-02 連続スパツタ装置
KR1019840005318A KR890002837B1 (ko) 1983-09-02 1984-08-30 연속 스퍼터 장치
US06/645,671 US4675096A (en) 1983-09-02 1984-08-30 Continuous sputtering apparatus
DE8484110398T DE3483637D1 (de) 1983-09-02 1984-08-31 Kontinuierliche zerstaeubungsvorrichtung.
EP84110398A EP0136562B1 (en) 1983-09-02 1984-08-31 Continuous sputtering apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58160388A JPS6052574A (ja) 1983-09-02 1983-09-02 連続スパツタ装置

Publications (2)

Publication Number Publication Date
JPS6052574A JPS6052574A (ja) 1985-03-25
JPS6337186B2 true JPS6337186B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1988-07-25

Family

ID=15713879

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58160388A Granted JPS6052574A (ja) 1983-09-02 1983-09-02 連続スパツタ装置

Country Status (5)

Country Link
US (1) US4675096A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
EP (1) EP0136562B1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
JP (1) JPS6052574A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
KR (1) KR890002837B1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
DE (1) DE3483637D1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

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US4806225A (en) * 1982-05-28 1989-02-21 Advanced Plasma Systems, Inc. Desmearing and plated-through-hole apparatus
JPH0613751B2 (ja) * 1986-03-07 1994-02-23 株式会社日立製作所 連続スパッタ装置
JPS62234539A (ja) * 1986-04-04 1987-10-14 Hitachi Ltd 真空処理装置
EP0246453A3 (en) * 1986-04-18 1989-09-06 General Signal Corporation Novel multiple-processing and contamination-free plasma etching system
US6103055A (en) * 1986-04-18 2000-08-15 Applied Materials, Inc. System for processing substrates
US5102495A (en) * 1986-04-18 1992-04-07 General Signal Corporation Method providing multiple-processing of substrates
US5308431A (en) * 1986-04-18 1994-05-03 General Signal Corporation System providing multiple processing of substrates
JPS63192865A (ja) * 1987-02-05 1988-08-10 Tokio Nakada 多層／多元薄膜形成スパッタリング装置およびその運転方法
DE3735284A1 (de) * 1987-10-17 1989-04-27 Leybold Ag Vorrichtung nach dem karussell-prinzip zum beschichten von substraten
US5618388A (en) * 1988-02-08 1997-04-08 Optical Coating Laboratory, Inc. Geometries and configurations for magnetron sputtering apparatus
US4851095A (en) * 1988-02-08 1989-07-25 Optical Coating Laboratory, Inc. Magnetron sputtering apparatus and process
US5798027A (en) * 1988-02-08 1998-08-25 Optical Coating Laboratory, Inc. Process for depositing optical thin films on both planar and non-planar substrates
US5225057A (en) * 1988-02-08 1993-07-06 Optical Coating Laboratory, Inc. Process for depositing optical films on both planar and non-planar substrates
US4911810A (en) * 1988-06-21 1990-03-27 Brown University Modular sputtering apparatus
JPH02107757A (ja) * 1988-10-15 1990-04-19 Koji Hashimoto アモルファス超格子合金の作製法
US5019233A (en) * 1988-10-31 1991-05-28 Eaton Corporation Sputtering system
US6989228B2 (en) 1989-02-27 2006-01-24 Hitachi, Ltd Method and apparatus for processing samples
US6375741B2 (en) * 1991-03-06 2002-04-23 Timothy J. Reardon Semiconductor processing spray coating apparatus
JP2644912B2 (ja) 1990-08-29 1997-08-25 株式会社日立製作所 真空処理装置及びその運転方法
US5205051A (en) * 1990-08-28 1993-04-27 Materials Research Corporation Method of preventing condensation of air borne moisture onto objects in a vessel during pumping thereof
US5237756A (en) * 1990-08-28 1993-08-24 Materials Research Corporation Method and apparatus for reducing particulate contamination
USRE39824E1 (en) 1990-08-29 2007-09-11 Hitachi, Ltd. Vacuum processing apparatus and operating method with wafers, substrates and/or semiconductors
USRE39756E1 (en) 1990-08-29 2007-08-07 Hitachi, Ltd. Vacuum processing operating method with wafers, substrates and/or semiconductors
JP2525284B2 (ja) * 1990-10-22 1996-08-14 ティーディーケイ株式会社 クリ―ン搬送方法及び装置
DE4110490C2 (de) * 1991-03-30 2002-02-28 Unaxis Deutschland Holding Kathodenzerstäubungsanlage
US5154730A (en) * 1991-05-17 1992-10-13 Materials Research Corporation Semiconductor wafer processing module having an inclined rotating wafer handling turret and a method of using the module
DE4117969C2 (de) * 1991-05-31 2000-11-09 Balzers Ag Liechtenstein Vakuumkammer
WO1994000868A1 (en) 1992-06-26 1994-01-06 Materials Research Corporation Transport system for wafer processing line
US5248371A (en) * 1992-08-13 1993-09-28 General Signal Corporation Hollow-anode glow discharge apparatus
US5482607A (en) * 1992-09-21 1996-01-09 Nissin Electric Co., Ltd. Film forming apparatus
CH691377A5 (de) * 1992-10-06 2001-07-13 Unaxis Balzers Ag Kammeranordnung für den Transport von Werkstücken und deren Verwendung.
EP0591706B1 (de) * 1992-10-06 2002-04-24 Unaxis Balzers Aktiengesellschaft Kammer für den Transport von Werkstücken
DE4235674C2 (de) * 1992-10-22 2000-12-28 Balzers Ag Liechtenstein Kammer für den Transport von Werkstücken in Vakuumatmosphäre, Kammerkombination und Verfahren zum Transportieren eines Werkstückes
DE4235677C2 (de) * 1992-10-22 1996-10-31 Balzers Hochvakuum Vakuumkammer, Vakuumbehandlungsanlage mit einer solchen Kammer sowie Transportverfahren
US5295777A (en) * 1992-12-23 1994-03-22 Materials Research Corporation Wafer transport module with rotatable and horizontally extendable wafer holder
US5738767A (en) * 1994-01-11 1998-04-14 Intevac, Inc. Substrate handling and processing system for flat panel displays
JP2676678B2 (ja) * 1994-11-28 1997-11-17 株式会社日立製作所 連続スパッタ処理方法
NL1000138C2 (nl) * 1995-04-13 1996-10-15 Od & Me Bv Inrichtingen voor het bewerken van een substraat alsmede werkwijze geschikt voor toepassing bij dergelijke inrichtingen.
US5709785A (en) * 1995-06-08 1998-01-20 First Light Technology Inc. Metallizing machine
CH691376A5 (de) * 1995-10-17 2001-07-13 Unaxis Balzers Ag Vakuumanlage zur Oberflächenbearbeitung von Werkstücken.
US6481956B1 (en) 1995-10-27 2002-11-19 Brooks Automation Inc. Method of transferring substrates with two different substrate holding end effectors
US6299404B1 (en) 1995-10-27 2001-10-09 Brooks Automation Inc. Substrate transport apparatus with double substrate holders
US6062798A (en) 1996-06-13 2000-05-16 Brooks Automation, Inc. Multi-level substrate processing apparatus
DE19642852A1 (de) * 1996-10-17 1998-04-23 Leybold Systems Gmbh Vakuumbehandlungsanlage zum Aufbringen dünner Schichten auf dreidimensionale, schalenförmige oder prismatische Substrate
DE19645104B4 (de) * 1996-10-31 2007-12-20 Pfeiffer Vacuum Gmbh Verfahren zur Durchführung eines Prozesses in einem mit Unterdruck beaufschlagten Prozessraum
JP2001506701A (ja) * 1996-12-23 2001-05-22 ユナキス・バルツェルス・アクチェンゲゼルシャフト 真空処理装置
JP4653263B2 (ja) * 1996-12-23 2011-03-16 オー・ツェー・エリコン・バルザース・アクチェンゲゼルシャフト 真空処理装置
US6905578B1 (en) * 1998-04-27 2005-06-14 Cvc Products, Inc. Apparatus and method for multi-target physical-vapor deposition of a multi-layer material structure
DE19826949A1 (de) * 1998-06-17 1999-12-23 Georg Kunkel Vorrichtung zum Transport von plattenartigen Substraten, beispielsweise von Glasplatten für Flachbildschirme
JP2001209981A (ja) * 1999-02-09 2001-08-03 Ricoh Co Ltd 光ディスク基板成膜装置、光ディスク基板成膜方法、基板ホルダーの製造方法、基板ホルダー、光ディスクおよび相変化記録型光ディスク
US6927160B1 (en) 1999-06-09 2005-08-09 National Semiconductor Corporation Fabrication of copper-containing region such as electrical interconnect
US7381638B1 (en) 1999-06-09 2008-06-03 National Semiconductor Corporation Fabrication technique using sputter etch and vacuum transfer
US6669824B2 (en) 2000-07-10 2003-12-30 Unaxis Usa, Inc. Dual-scan thin film processing system
US6495010B2 (en) 2000-07-10 2002-12-17 Unaxis Usa, Inc. Differentially-pumped material processing system
US6652656B2 (en) * 2001-07-24 2003-11-25 Tokyo Electron Limited Semiconductor wafer holding assembly
US6835414B2 (en) * 2001-07-27 2004-12-28 Unaxis Balzers Aktiengesellschaft Method for producing coated substrates
US6843883B2 (en) * 2001-08-31 2005-01-18 Tdk Corporation Vacuum processing apparatus and method for producing an object to be processed
EP1617456B1 (de) * 2004-05-28 2006-10-18 Applied Films GmbH & Co. KG Antriebsmechanismus für eine Vakuum-Behandlungsanlage
EP2006411A1 (en) * 2007-06-19 2008-12-24 Applied Materials, Inc. Evaporation apparatus having a rotatable evaporation unit receptacle
US8785235B2 (en) * 2012-02-10 2014-07-22 Tsmc Solar Ltd. Apparatus and method for producing solar cells
US9029737B2 (en) * 2013-01-04 2015-05-12 Tsmc Solar Ltd. Method and system for forming absorber layer on metal coated glass for photovoltaic devices
TW201922604A (zh) * 2017-11-15 2019-06-16 瑞士商艾維太克股份有限公司 真空處理設備及真空處理基板的方法
WO2020035219A1 (de) * 2018-08-17 2020-02-20 Vat Holding Ag Anordnung mit zumindest zwei kammern und zumindest einem transferventil
CN117626214B (zh) * 2024-01-25 2024-10-25 沈阳松陵三航机械制造有限公司 用于铝合金表面的镀膜装置

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US3981791A (en) * 1975-03-10 1976-09-21 Signetics Corporation Vacuum sputtering apparatus
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JPS59179786A (ja) * 1983-03-30 1984-10-12 Hitachi Ltd 連続スパツタ装置

Also Published As

Publication number Publication date
EP0136562A3 (en) 1987-10-28
DE3483637D1 (de) 1991-01-03
KR890002837B1 (ko) 1989-08-04
EP0136562A2 (en) 1985-04-10
KR850002686A (ko) 1985-05-15
EP0136562B1 (en) 1990-11-22
US4675096A (en) 1987-06-23
JPS6052574A (ja) 1985-03-25

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