JPS6336556A - 相補型ｍｏｓ半導体装置の保護回路 - Google Patents

相補型ｍｏｓ半導体装置の保護回路

Info

Publication number
JPS6336556A
JPS6336556A JP61179126A JP17912686A JPS6336556A JP S6336556 A JPS6336556 A JP S6336556A JP 61179126 A JP61179126 A JP 61179126A JP 17912686 A JP17912686 A JP 17912686A JP S6336556 A JPS6336556 A JP S6336556A
Authority
JP
Japan
Prior art keywords
region
type
conductivity type
semiconductor device
terminal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP61179126A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0252426B2 (enrdf_load_stackoverflow
Inventor
Shinji Taguchi
田口　信治
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP61179126A priority Critical patent/JPS6336556A/ja
Publication of JPS6336556A publication Critical patent/JPS6336556A/ja
Publication of JPH0252426B2 publication Critical patent/JPH0252426B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
    • H10D89/601—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
JP61179126A 1986-07-30 1986-07-30 相補型ｍｏｓ半導体装置の保護回路 Granted JPS6336556A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP61179126A JPS6336556A (ja) 1986-07-30 1986-07-30 相補型ｍｏｓ半導体装置の保護回路

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP61179126A JPS6336556A (ja) 1986-07-30 1986-07-30 相補型ｍｏｓ半導体装置の保護回路

Publications (2)

Publication Number Publication Date
JPS6336556A true JPS6336556A (ja) 1988-02-17
JPH0252426B2 JPH0252426B2 (enrdf_load_stackoverflow) 1990-11-13

Family

ID=16060446

Family Applications (1)

Application Number Title Priority Date Filing Date
JP61179126A Granted JPS6336556A (ja) 1986-07-30 1986-07-30 相補型ｍｏｓ半導体装置の保護回路

Country Status (1)

Country Link
JP (1) JPS6336556A (enrdf_load_stackoverflow)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003209185A (ja) 2002-01-11 2003-07-25 Seiko Epson Corp 半導体装置

Also Published As

Publication number Publication date
JPH0252426B2 (enrdf_load_stackoverflow) 1990-11-13

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