JPS6335709B2 - - Google Patents

Info

Publication number
JPS6335709B2
JPS6335709B2 JP57059511A JP5951182A JPS6335709B2 JP S6335709 B2 JPS6335709 B2 JP S6335709B2 JP 57059511 A JP57059511 A JP 57059511A JP 5951182 A JP5951182 A JP 5951182A JP S6335709 B2 JPS6335709 B2 JP S6335709B2
Authority
JP
Japan
Prior art keywords
substrate
vapor deposition
mask
container
source
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP57059511A
Other languages
English (en)
Japanese (ja)
Other versions
JPS58177463A (ja
Inventor
Minoru Tanaka
Hitoshi Kubota
Susumu Aiuchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP5951182A priority Critical patent/JPS58177463A/ja
Publication of JPS58177463A publication Critical patent/JPS58177463A/ja
Publication of JPS6335709B2 publication Critical patent/JPS6335709B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Electrodes Of Semiconductors (AREA)
JP5951182A 1982-04-12 1982-04-12 積層薄膜成膜装置 Granted JPS58177463A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5951182A JPS58177463A (ja) 1982-04-12 1982-04-12 積層薄膜成膜装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5951182A JPS58177463A (ja) 1982-04-12 1982-04-12 積層薄膜成膜装置

Publications (2)

Publication Number Publication Date
JPS58177463A JPS58177463A (ja) 1983-10-18
JPS6335709B2 true JPS6335709B2 (enrdf_load_stackoverflow) 1988-07-15

Family

ID=13115351

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5951182A Granted JPS58177463A (ja) 1982-04-12 1982-04-12 積層薄膜成膜装置

Country Status (1)

Country Link
JP (1) JPS58177463A (enrdf_load_stackoverflow)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6017070A (ja) * 1983-07-11 1985-01-28 Nippon Telegr & Teleph Corp <Ntt> 薄膜形成方法及びその装置
JPS61144029A (ja) * 1984-12-17 1986-07-01 Nippon Telegr & Teleph Corp <Ntt> 燐を含有する酸化シリコン膜の製造方法及び製造装置
JPH07105345B2 (ja) * 1985-08-08 1995-11-13 日電アネルバ株式会社 基体処理装置
JPH06192821A (ja) * 1991-03-26 1994-07-12 Toyo Eng Corp レーザｐｖｄ装置
KR0108395Y1 (en) * 1993-12-01 1997-10-21 Hyundai Electronics Ind Sputtering system for semiconductor device
TW490714B (en) 1999-12-27 2002-06-11 Semiconductor Energy Lab Film formation apparatus and method for forming a film
JP4167833B2 (ja) 2002-01-24 2008-10-22 株式会社ユーテック 成膜装置、酸化物薄膜成膜用基板及びその製造方法
US7309269B2 (en) * 2002-04-15 2007-12-18 Semiconductor Energy Laboratory Co., Ltd. Method of fabricating light-emitting device and apparatus for manufacturing light-emitting device
JP5256466B2 (ja) * 2008-08-28 2013-08-07 株式会社ユーテック 成膜装置及び酸化物薄膜成膜用基板の製造方法
KR102160155B1 (ko) * 2013-03-14 2020-09-28 삼성디스플레이 주식회사 진공증착기
JP6627181B1 (ja) * 2018-07-31 2020-01-08 キヤノントッキ株式会社 蒸発源及び蒸着装置

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5546760U (enrdf_load_stackoverflow) * 1978-09-22 1980-03-27

Also Published As

Publication number Publication date
JPS58177463A (ja) 1983-10-18

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