JPS6335709B2 - - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a laminated thin film forming apparatus that forms both a sputtered film and a vapor-deposited film in the same vacuum vessel.

Conventional embodiments are shown in FIGS. 1 to 3.

The example in Figure 1 is an IBM Technical Disclosure.
This device was introduced in Bulletin Vol. 21 No. 7 December 1978 and is capable of performing mask evaporation and mask sputtering in the same vacuum chamber. The vacuum container 1 has a one-chamber structure and is evacuated by a vacuum pump 2. A vapor deposition source 3, a sputter electrode 4, a substrate 5, and a mask 6 are installed in the vacuum container 1, and only the substrate 5 is movable. The substrate 5 is held by a substrate holder 7, and rotated in a horizontal plane by an arm 9 fixed to a main shaft 8 hooking a hanging fitting 10 attached to the substrate holder 7 and rotating upward. The substrate 5 and the mask 6 are aligned by placing a positioning ball 11 integrated with the substrate holder 7 into a positioning hole 13 made in the mask holder 12.

The embodiment shown in FIG. 2 is disclosed in Japanese Unexamined Patent Publication No. 53-124968, and is an apparatus for obtaining a multilayer film consisting of a sputtered film and a vapor-deposited film in the same vacuum chamber. A vapor deposition source 3, a sputter electrode 4, and a substrate 5 are installed in a vacuum container 1 having a one-chamber structure, and the substrate 5 is held by a substrate holder 7 so as to be rotatable in a vertical plane. The sputter electrode 4 can be moved linearly with respect to the substrate 5 so that the distance between its opposing surfaces can be adjusted, and the evaporation source 3 is fixed.

The embodiment shown in FIG. 3 shows an apparatus with an in-line configuration in which a vapor deposition source 3 and a sputter electrode 4 are linearly arranged in the same vacuum container 1. The vapor deposition source 3 and sputter electrode 4 are fixed, and only the substrate 5 is placed. is held by a belt-shaped substrate holder 7 and moves linearly in a horizontal plane.

As described above, in any of the embodiments shown in FIGS. 1 to 3, the evaporation source is fixed at a predetermined position, and the sputter electrode is fixed at a predetermined position or can be moved linearly only in a direction in which the facing distance with the substrate can be adjusted. Since the substrate is moved to a position facing the evaporation source or the sputtering electrode, it has the following disadvantages. First, the evaporation source and sputtering electrode are installed at different positions so that they do not affect each other during thin film formation.
In addition, the evaporation source must be installed at a distance of 300 to 400 mm from the substrate, and since the substrate moving mechanism is installed inside the vacuum container, the vacuum container becomes large, a large-capacity vacuum pump is required, and the equipment It had the disadvantage of increasing size and cost. Second, there is a drawback that the substrate temperature cannot be maintained constant. When forming a thin film by vapor deposition or sputtering, it is necessary to heat the substrate to a predetermined temperature depending on the material of the thin film, but in this case, in order to heat the substrate efficiently and accurately, it is necessary to heat only the substrate It is desirable to heat the substrate and the heater settings as little as possible. However, in the conventional method, the substrate moves, so the setting conditions of the substrate and heater must be changed each time a layer of film is formed, making it impossible to stably heat the substrate and maintain a constant substrate temperature. There were flaws. If the substrate temperature is unstable, it will adversely affect the adhesion strength and film quality of the film. Thirdly, when performing mask vapor deposition or mask sputtering, there is a drawback that the substrate and mask cannot be precisely aligned. For example, when forming the lead wires of a thin film magnetic head by mask evaporation or mask sputtering, the substrate and mask are
The alignment must be approximately 10 μm. When a vapor-deposited film and a sputtered film of the same pattern are to be superimposed on a substrate without misalignment, the mask pattern must be accurately aligned with the pattern of the first layer. However, in the conventional method shown in Figure 1, the substrate is moved each time a layer of film is formed and the substrate is aligned with a mask different from the mask used for the first layer. Large positional deviations occur due to pattern errors, alignment errors between the substrate and mask each time a film is formed, and differences in wraparound amount due to changes in the gap between the substrate and mask. For example, in the case of the method shown in Figure 1, the error between the masks is ±20 μm, the alignment error between the substrate and the mask is ±30 μm each time a film is formed, and the error is ±10 μm due to the difference in wraparound amount due to gap changes between the substrate and the mask. This results in a total positional deviation of approximately ±40 μm (root mean square value of error). Furthermore, when aligning the substrate and mask as in the embodiment shown in FIG. 1, positional deviations occur due to variations in substrate temperature. For example, a square glass substrate with a coefficient of thermal expansion of 9.33×10 ^-6 /℃ and a side of 100 mm and a stainless steel mask with a coefficient of thermal expansion of 17.3×10 ^-6 /℃ are aligned based on the end face.
If the substrate temperature varies by ±10°C, a positional deviation of approximately ±11 μm will occur at the farthest position from the fixed reference end face.

Fourthly, there is a drawback that the quality of the vacuum deteriorates. In the conventional method, the substrates are held in a plurality of substrate holders and moved by a substrate transfer mechanism installed in a vacuum container. Further, since the substrate is moved to a position corresponding to the evaporation source and the sputter electrode, a substrate heater (not shown) is required at each position. In this way, by bringing many mechanisms and parts into the vacuum container, the vacuum becomes contaminated due to dust generation due to abrasion from the sliding parts and degassing from the parts surfaces, and the film quality deteriorates due to the incorporation of unnecessary gas molecules. There was a problem in that the yield was reduced due to contamination of the thin film formed on the substrate.

The purpose of the present invention is to solve the above-mentioned drawbacks of the prior art, and to provide a laminated thin film that enables high-quality evaporated films and sputtered films to be laminated and deposited in the same vacuum container by aligning them with high precision without breaking the vacuum. The purpose of the present invention is to provide a film forming apparatus.

In order to achieve the above object, the present invention comprises a container having a predetermined atmosphere, a substrate on which a vapor deposited film and a sputtered film are laminated, and a heater for heating the substrate. a substrate holder provided on the top of the container, a mask placed close to the bottom of the substrate; an evaporation source connected to a evaporation power supply provided on the outside; a evaporation shutter provided above the evaporation source so as to be openable and closable;
A bearing provided at a lower position of the container horizontally eccentric from the film forming position, a rotating shaft rotatably supported by the bearing, and an inner side of the rotating shaft of the container being bent to form the mask and the vapor deposition source. a sputtering device, which is integrated with a rotating shaft so as to be located between the container and the sputtering device, and is configured to place a target facing the mask and connect to a sputtering power source provided on the outside of the container via the rotating shaft. A sputtering source having a driving source provided outside the container is provided to rotate the electrode and the rotating shaft, and a substrate holder having a heater can be fixed, thereby reducing misalignment of the laminated pattern. A laminated thin film characterized in that a spatter source is supported by a bearing so that it can rotate, reducing the amount of dust generated and outgassing that enters a vacuum container, and making it possible to form a high quality laminated film. It is a film forming device.

Embodiments of the present invention will be described below with reference to FIGS. 4, 5, and 6.
This will be explained in detail with reference to the drawings. In FIGS. 4 to 6, the same parts as in FIGS. 1 to 3 are given the same reference numerals. The embodiment of the present invention is an apparatus for performing mask vapor deposition and mask sputtering, and is used to continuously stack vapor deposited films and sputtered films of the same pattern on a substrate 5 without breaking the vacuum. FIG. 4 shows an embodiment of the present invention, in which a one-chamber vacuum vessel 1 includes, in order from the bottom, a vapor deposition source 3, a vapor deposition shutter 14, a sputter electrode 4, a sputter shutter 15, a mask 6,
A substrate 5 and a heater 16 are installed, and a vacuum pump 2 performs evacuation. The sputter electrode 4, the vapor deposition shutter 14, and the sputter shutter 15 are rotatably movable via gear trains 20, 21, and 22 by drive motors 17, 18, and 19 provided in the atmosphere, and the heater 16 is movable linearly. be. The vapor deposition source 3, mask 6, and substrate 5 are fixed, and the substrate 5 is held by a substrate holder 7. Vapor deposition is controlled by a vapor deposition power source 23, and sputtering is controlled by a high frequency sputter power source 25 via a matching box 24 in the case of high frequency sputtering, and directly by a direct current sputtering power source 25' in the case of DC sputtering. In the case of this embodiment, the structure is such that the sputter electrode 4 is installed between the evaporation source 3 and the substrate 5.
The spacing between the substrate 5 and the evaporation source 3 is generally 300 to 400 mm, while the spacing between the substrate 5 and the sputter electrode 4 is about 50 to 100 mm, so there is no particular problem in terms of construction. When depositing films and sputtering films of the same pattern are alternately laminated on the substrate 5, the sputtering electrode 4 and the sputtering shutter 15 are first rotated and retracted to a position where they do not interfere with the vapor deposition. The substrate 5 is the heater 1
6, the vapor deposition material is evaporated from the vapor deposition source 3, and the vapor deposition shutter 14 is rotated to form a vapor deposition film on the substrate 5 through the patterned holes of the mask 6. When the formation of the vapor deposition film is completed, the vapor deposition shutter 14 is rotated over the vapor deposition source 3 to stop the evaporation of the vapor deposition material from the vapor deposition source 3, and the sputter electrode 4 and the sputter shutter 15 are moved to a position facing the substrate 5. , rotate and move. The substrate 5 is heated to a predetermined temperature for sputtering by the heater 16,
When a sputtering-enabled pressure is reached by introducing argon gas (not shown), sputtering is started, and the sputtering shutter 15 is rotated to form a sputtered film on the already formed vapor deposited film through the pattern hole of the mask 6. When the formation of the sputtering film is completed, the sputtering shutter 15 is rotated and moved above the sputtering electrode 4 to stop the sputtering. Once the substrate 5 and mask 6 are aligned and set, they are not reset until the formation of all the laminated films is completed.

FIG. 5 shows another embodiment according to the present invention, in which both the evaporation source 3 and the sputter electrode 4 are movable. During sputtering, the sputter electrode 4 moves to a position facing the substrate, and the evaporation source 3 This figure shows the situation where the vehicle is evacuated to a position where it will not cause any problems. This embodiment is an effective method when the vapor deposition source 3 and the sputter electrode 4 interfere with each other at a position facing the substrate 5. In this embodiment, when deposited films and sputtered films of the same pattern are alternately stacked on the substrate 5,
First, the sputter electrode 4 is rotated and retracted to a position that does not interfere with vapor deposition, and the vapor deposition source 3 is moved to a position facing the substrate 5 using an actuator 47 such as an air cylinder. When the substrate 5 is heated to a predetermined temperature by the heater 16, the vapor deposition material is evaporated from the vapor deposition source 3, and the shutter 15 (used for both vapor deposition and sputtering) is rotated to form a vapor deposited film on the substrate 5 through the pattern hole of the mask 6. When the formation of the vapor deposition film is completed, the shutter 15 is rotated and moved onto the vapor deposition source 3,
Evaporation of the vapor deposition material from the vapor deposition source 3 is stopped, and the vapor deposition source 3 is retracted from the position facing the substrate to a position that does not interfere with sputtering. Next, the sputtering electrode 4 is rotated to a position facing the substrate 5, the substrate 5 is heated to a predetermined temperature for sputtering by the heater 16, and the sputtering is stopped when the pressure that allows sputtering is reached by introducing argon gas (not shown). Start, shutter 1
5 is rotated to form a sputtered film on the already formed vapor deposited film through the patterned holes of the mask 6. When the formation of the spatter film is completed, the shutter 15 is
is rotated to above the sputter electrode 4 and the sputter is stopped.

FIG. 6 shows in detail a rotatably movable sputter electrode 4 in which the center of the cathode and target and the center of the rotation axis are eccentric, according to the present invention. Reference numeral 26 denotes an introduction block made of a conductor for feeding cooling water to the magnetron type spatter cathode 27, and is fixed via an insulator (not shown). 28,
Reference numeral 29 is a water pipe made of a conductor that sends cooling water from the introduction block 26 to the cathode 27, 28 is a water pipe, and 29 is a drain pipe. These are rotatably engaged with the introduction block 26 and are O-rings 30, 3.
It is sealed by 1. 32 is electrically insulated from a commonly seen magnetron type cathode electrode with a magnet inside by an insulating member 33, and serves as an anode on the target 34 surface, with a gap to the extent that no discharge occurs in other parts. It is a shield tube that has the role of preventing discharge by maintaining the 35 is a seal block made of an insulating material such as Teflon, which electrically insulates between the drain pipe 29 and the shield pipe 32, and further includes an O-ring 3.
6 and 37 for vacuum sealing. The shield tube 32 is rotatably attached to a part of the wall of the vacuum vessel 1 by a bearing 40 in a flange 39 which is vacuum-sealed with an O-ring 38. Its outer periphery is vacuum sealed.

The water pipes 28, 29 and the shield pipe 32 are bent in the middle in order to make the centers of the cathode 27 and target 34 eccentric to the center of the rotating shaft.

A gear 42 is fixed to the lower end of the shield tube 32, and a gear 42 is attached to the rotating shaft of a motor 44.
3, the shield tube 32 rotates as the motor 44 rotates, and the sputter electrode 4 consisting of the magnetron type sputter cathode 27, target 34, etc.
is rotated from a position facing the substrate 5 to a retracted position shown by a dashed line in the figure where vapor deposition is not hindered. The sputter current from the sputter power supply 25 is transmitted to the matching box 24, the conductive plate 45, and the terminal 4.
6. It is introduced into the magnetron type sputter cathode 27 via the introduction block 26 and the water pipes 28 and 29, and a discharge is generated between the target 34 and the upper end of the shield tube 32.

As described above, in this example, the evaporation source and sputtering electrode are provided in the same vacuum container, the substrate is fixed, and switching between evaporation and sputtering is performed using the movable sputter electrode or both the movable sputter electrode and the movable evaporation source. Therefore, there is no need to transport the substrate, and only one substrate, one substrate holder, one mask, and one substrate heater are required.
Furthermore, by aligning the substrate and mask only once at the beginning, the same pattern of deposited film can be obtained without breaking the vacuum.
It has become possible to form sputtered films in a continuous manner.

As explained above, according to the present invention, it is possible to fix the substrate holder having a heater to reduce the positional shift of the laminated pattern, and also to support it with a bearing so that the sputter source can rotate inside the vacuum container. Reduces the amount of dust and outgassing that enters the
It has the effect of being able to form a high quality laminated film.

[Brief explanation of the drawing]

1 to 3 are diagrams for explaining a conventional embodiment, FIGS. 4 and 5 are diagrams for explaining an embodiment according to the present invention, and FIG. 6 is a diagram for explaining an embodiment according to the present invention. and fifth
FIG. 3 is a diagram showing details of the sputter electrode section shown in the figure. 1... Vacuum container, 2... Vacuum exhaust pump, 3...
... Vapor deposition source, 4 ... Sputter electrode, 5 ... Substrate, 6
...Mask, 7...Substrate holder, 8...Spindle,
9... Arm, 10... Hanging bracket, 11... Positioning ball, 12... Mask holder, 13...
Positioning hole, 14... Shutter for vapor deposition, 15...
Shutter for sputtering, 16...Substrate heater,
17, 18, 19... Drive motor, 20, 21,
22... Gear example, 23... Power source for vapor deposition, 24...
Matching box, 25... Power supply for high frequency sputter, 25'... Power supply for DC sputter, 26...
Introduction block, 27... Magnetron type sputter cathode, 28... Water pipe, 29... Drain pipe, 3
0, 31...O ring, 32...shield tube, 3
3... Insulating member, 34... Target, 35...
Seal block, 36, 37...O ring, 38
...O ring, 39 ... flange, 40 ... bearing, 41 ... O ring, 42, 43 ... gear, 4
4... Motor, 45... Conductive plate, 46... Terminal, 47... Actuator.

Claims (1)

[Claims] 1. A container having a predetermined atmosphere, a substrate on which a vapor-deposited film and a sputtered film are to be laminated is attached facing downward, and a heater is provided to heat the substrate, and further provided on the top of the container. a substrate holder, a mask installed close to the bottom of the substrate, and a mask provided at the bottom of the container and outside the container so as to be located at a film forming position opposite to the mask during vapor deposition. a deposition source connected to a power supply for deposition;
a vapor deposition shutter provided above the vapor deposition source so that it can be opened and closed; a bearing provided at a lower position of the container horizontally eccentric from the film forming position;
A rotating shaft rotatably supported by the bearing, an inner side of the container of the rotating shaft being bent to be integrated with the rotating shaft so as to be positioned between the mask and the vapor deposition source, and a target is placed toward the mask. and a sputtering electrode configured to be connected to a sputtering power source provided outside the container via the rotating shaft, and a drive source provided outside the container to rotate the rotating shaft. A laminated thin film deposition apparatus characterized in that it is equipped with a sputter source. 2. The laminated thin film forming method according to claim 1, wherein the vapor deposition source is movable so that it can be moved to a film forming position during vapor deposition and retreated to a position where there is no problem during sputtering. Membrane device. 3. The laminated thin film deposition apparatus according to claim 1, wherein a cooling water introduction pipe for cooling the sputter electrode of the sputter source is disposed within the rotating shaft.