JPS58177463A - 積層薄膜成膜装置 - Google Patents

積層薄膜成膜装置

Info

Publication number
JPS58177463A
JPS58177463A JP5951182A JP5951182A JPS58177463A JP S58177463 A JPS58177463 A JP S58177463A JP 5951182 A JP5951182 A JP 5951182A JP 5951182 A JP5951182 A JP 5951182A JP S58177463 A JPS58177463 A JP S58177463A
Authority
JP
Japan
Prior art keywords
sputtering
substrate
source
evaporation
thin film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP5951182A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6335709B2 (enrdf_load_stackoverflow
Inventor
Minoru Tanaka
稔 田中
Hitoshi Kubota
仁志 窪田
Susumu Aiuchi
進 相内
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP5951182A priority Critical patent/JPS58177463A/ja
Publication of JPS58177463A publication Critical patent/JPS58177463A/ja
Publication of JPS6335709B2 publication Critical patent/JPS6335709B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Electrodes Of Semiconductors (AREA)
JP5951182A 1982-04-12 1982-04-12 積層薄膜成膜装置 Granted JPS58177463A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5951182A JPS58177463A (ja) 1982-04-12 1982-04-12 積層薄膜成膜装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5951182A JPS58177463A (ja) 1982-04-12 1982-04-12 積層薄膜成膜装置

Publications (2)

Publication Number Publication Date
JPS58177463A true JPS58177463A (ja) 1983-10-18
JPS6335709B2 JPS6335709B2 (enrdf_load_stackoverflow) 1988-07-15

Family

ID=13115351

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5951182A Granted JPS58177463A (ja) 1982-04-12 1982-04-12 積層薄膜成膜装置

Country Status (1)

Country Link
JP (1) JPS58177463A (enrdf_load_stackoverflow)

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6017070A (ja) * 1983-07-11 1985-01-28 Nippon Telegr & Teleph Corp <Ntt> 薄膜形成方法及びその装置
JPS61144029A (ja) * 1984-12-17 1986-07-01 Nippon Telegr & Teleph Corp <Ntt> 燐を含有する酸化シリコン膜の製造方法及び製造装置
JPS6235517A (ja) * 1985-08-08 1987-02-16 Anelva Corp 基体処理装置
JPH06192821A (ja) * 1991-03-26 1994-07-12 Toyo Eng Corp レーザｐｖｄ装置
JPH07211640A (ja) * 1993-12-01 1995-08-11 Hyundai Electron Ind Co Ltd 半導体素子製造用スパッターリング装置
EP1369499A3 (en) * 2002-04-15 2004-10-20 Semiconductor Energy Laboratory Co., Ltd. Method of fabricating light-emitting device and apparatus for manufacturing light-emitting device
WO2010024131A1 (ja) * 2008-08-28 2010-03-04 株式会社ユーテック 成膜装置及び酸化物薄膜成膜用基板の製造方法
US7678241B2 (en) 2002-01-24 2010-03-16 Seiko Epson Corporation Film forming apparatus, substrate for forming oxide thin film and production method thereof
US8119189B2 (en) 1999-12-27 2012-02-21 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing a display device
CN104046944A (zh) * 2013-03-14 2014-09-17 三星显示有限公司 真空蒸发装置
JP2020019993A (ja) * 2018-07-31 2020-02-06 キヤノントッキ株式会社 蒸発源及び蒸着装置

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5546760U (enrdf_load_stackoverflow) * 1978-09-22 1980-03-27

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5546760U (enrdf_load_stackoverflow) * 1978-09-22 1980-03-27

Cited By (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6017070A (ja) * 1983-07-11 1985-01-28 Nippon Telegr & Teleph Corp <Ntt> 薄膜形成方法及びその装置
JPS61144029A (ja) * 1984-12-17 1986-07-01 Nippon Telegr & Teleph Corp <Ntt> 燐を含有する酸化シリコン膜の製造方法及び製造装置
JPS6235517A (ja) * 1985-08-08 1987-02-16 Anelva Corp 基体処理装置
JPH06192821A (ja) * 1991-03-26 1994-07-12 Toyo Eng Corp レーザｐｖｄ装置
JPH07211640A (ja) * 1993-12-01 1995-08-11 Hyundai Electron Ind Co Ltd 半導体素子製造用スパッターリング装置
US8119189B2 (en) 1999-12-27 2012-02-21 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing a display device
US9559302B2 (en) 1999-12-27 2017-01-31 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing a display device
US7678241B2 (en) 2002-01-24 2010-03-16 Seiko Epson Corporation Film forming apparatus, substrate for forming oxide thin film and production method thereof
EP1369499A3 (en) * 2002-04-15 2004-10-20 Semiconductor Energy Laboratory Co., Ltd. Method of fabricating light-emitting device and apparatus for manufacturing light-emitting device
WO2010024131A1 (ja) * 2008-08-28 2010-03-04 株式会社ユーテック 成膜装置及び酸化物薄膜成膜用基板の製造方法
JP2010053402A (ja) * 2008-08-28 2010-03-11 Utec:Kk 成膜装置及び酸化物薄膜成膜用基板の製造方法
CN104046944A (zh) * 2013-03-14 2014-09-17 三星显示有限公司 真空蒸发装置
JP2020019993A (ja) * 2018-07-31 2020-02-06 キヤノントッキ株式会社 蒸発源及び蒸着装置

Also Published As

Publication number Publication date
JPS6335709B2 (enrdf_load_stackoverflow) 1988-07-15

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