JPS63307776A - 薄膜半導体装置とその製造方法 - Google Patents

薄膜半導体装置とその製造方法

Info

Publication number
JPS63307776A
JPS63307776A JP62143131A JP14313187A JPS63307776A JP S63307776 A JPS63307776 A JP S63307776A JP 62143131 A JP62143131 A JP 62143131A JP 14313187 A JP14313187 A JP 14313187A JP S63307776 A JPS63307776 A JP S63307776A
Authority
JP
Japan
Prior art keywords
film
semiconductor device
insulating substrate
thin film
orientation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP62143131A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0571193B2 (enrdf_load_stackoverflow
Inventor
Takashi Aoyama
隆 青山
Saburo Oikawa
及川　三郎
Yoshiaki Okajima
岡島　義昭
Nobutake Konishi
信武 小西
Genshirou Kawachi
玄士朗 河内
Hidemi Adachi
安達　英美
Takaya Suzuki
誉也 鈴木
Kenji Miyata
健治 宮田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP62143131A priority Critical patent/JPS63307776A/ja
Priority to US07/203,935 priority patent/US5153702A/en
Priority to KR1019880006942A priority patent/KR970004836B1/ko
Publication of JPS63307776A publication Critical patent/JPS63307776A/ja
Publication of JPH0571193B2 publication Critical patent/JPH0571193B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Thin Film Transistor (AREA)
  • Recrystallisation Techniques (AREA)
JP62143131A 1987-06-10 1987-06-10 薄膜半導体装置とその製造方法 Granted JPS63307776A (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP62143131A JPS63307776A (ja) 1987-06-10 1987-06-10 薄膜半導体装置とその製造方法
US07/203,935 US5153702A (en) 1987-06-10 1988-06-08 Thin film semiconductor device and method for fabricating the same
KR1019880006942A KR970004836B1 (ko) 1987-06-10 1988-06-10 박막반도체장치 및 그 제조방법

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62143131A JPS63307776A (ja) 1987-06-10 1987-06-10 薄膜半導体装置とその製造方法

Related Child Applications (2)

Application Number Title Priority Date Filing Date
JP30051994A Division JP2791286B2 (ja) 1994-12-05 1994-12-05 半導体装置
JP27582396A Division JP2716036B2 (ja) 1996-10-18 1996-10-18 薄膜半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPS63307776A true JPS63307776A (ja) 1988-12-15
JPH0571193B2 JPH0571193B2 (enrdf_load_stackoverflow) 1993-10-06

Family

ID=15331635

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62143131A Granted JPS63307776A (ja) 1987-06-10 1987-06-10 薄膜半導体装置とその製造方法

Country Status (1)

Country Link
JP (1) JPS63307776A (enrdf_load_stackoverflow)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0320084A (ja) * 1989-06-16 1991-01-29 Matsushita Electron Corp 薄膜トランジスタの製造方法
EP0631325A3 (en) * 1993-06-25 1996-12-18 Semiconductor Energy Lab Semiconductor device with a directional non-monocrystalline silicon thin film and method for its production.
US6730549B1 (en) 1993-06-25 2004-05-04 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for its preparation
US7329906B2 (en) 1992-08-27 2008-02-12 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for forming the same

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57132191A (en) * 1981-02-10 1982-08-16 Suwa Seikosha Kk Active matrix substrate
JPS5884464A (ja) * 1981-11-13 1983-05-20 Canon Inc 半導体素子
JPS58123771A (ja) * 1982-01-19 1983-07-23 Canon Inc 半導体素子
JPS59215720A (ja) * 1983-05-24 1984-12-05 Seiko Epson Corp 薄膜半導体装置の製造方法
JPS61160925A (ja) * 1985-01-09 1986-07-21 Nec Corp Ｓｏｉ結晶成長方法
JPS6239070A (ja) * 1985-08-09 1987-02-20 ゼネラル　エレクトリツク　カンパニイ トランジスタの製造法
JPH0538462A (ja) * 1991-08-02 1993-02-19 Ube Ind Ltd 竪型粉砕機

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57132191A (en) * 1981-02-10 1982-08-16 Suwa Seikosha Kk Active matrix substrate
JPS5884464A (ja) * 1981-11-13 1983-05-20 Canon Inc 半導体素子
JPS58123771A (ja) * 1982-01-19 1983-07-23 Canon Inc 半導体素子
JPS59215720A (ja) * 1983-05-24 1984-12-05 Seiko Epson Corp 薄膜半導体装置の製造方法
JPS61160925A (ja) * 1985-01-09 1986-07-21 Nec Corp Ｓｏｉ結晶成長方法
JPS6239070A (ja) * 1985-08-09 1987-02-20 ゼネラル　エレクトリツク　カンパニイ トランジスタの製造法
JPH0538462A (ja) * 1991-08-02 1993-02-19 Ube Ind Ltd 竪型粉砕機

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0320084A (ja) * 1989-06-16 1991-01-29 Matsushita Electron Corp 薄膜トランジスタの製造方法
US7329906B2 (en) 1992-08-27 2008-02-12 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for forming the same
US7416907B2 (en) 1992-08-27 2008-08-26 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for forming the same
EP0631325A3 (en) * 1993-06-25 1996-12-18 Semiconductor Energy Lab Semiconductor device with a directional non-monocrystalline silicon thin film and method for its production.
EP1026751A3 (en) * 1993-06-25 2002-11-20 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for its preparation
EP1026752A3 (en) * 1993-06-25 2002-11-20 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for its preparation
US6730549B1 (en) 1993-06-25 2004-05-04 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for its preparation
US6756657B1 (en) 1993-06-25 2004-06-29 Semiconductor Energy Laboratory Co., Ltd. Method of preparing a semiconductor having controlled crystal orientation
US7148094B2 (en) 1993-06-25 2006-12-12 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for its preparation

Also Published As

Publication number Publication date
JPH0571193B2 (enrdf_load_stackoverflow) 1993-10-06

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