JPS6327319B2 - - Google Patents

Info

Publication number
JPS6327319B2
JPS6327319B2 JP59044649A JP4464984A JPS6327319B2 JP S6327319 B2 JPS6327319 B2 JP S6327319B2 JP 59044649 A JP59044649 A JP 59044649A JP 4464984 A JP4464984 A JP 4464984A JP S6327319 B2 JPS6327319 B2 JP S6327319B2
Authority
JP
Japan
Prior art keywords
substrate
diamond
reaction mixture
reaction
artificial diamond
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP59044649A
Other languages
English (en)
Japanese (ja)
Other versions
JPS60191097A (ja
Inventor
Noribumi Kikuchi
Takayuki Shingyochi
Hiroaki Yamashita
Akio Nishama
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Metal Corp
Original Assignee
Mitsubishi Metal Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Metal Corp filed Critical Mitsubishi Metal Corp
Priority to JP59044649A priority Critical patent/JPS60191097A/ja
Publication of JPS60191097A publication Critical patent/JPS60191097A/ja
Publication of JPS6327319B2 publication Critical patent/JPS6327319B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/04—Diamond

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
JP59044649A 1984-03-08 1984-03-08 人工ダイヤモンドの析出生成方法 Granted JPS60191097A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59044649A JPS60191097A (ja) 1984-03-08 1984-03-08 人工ダイヤモンドの析出生成方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59044649A JPS60191097A (ja) 1984-03-08 1984-03-08 人工ダイヤモンドの析出生成方法

Publications (2)

Publication Number Publication Date
JPS60191097A JPS60191097A (ja) 1985-09-28
JPS6327319B2 true JPS6327319B2 (cs) 1988-06-02

Family

ID=12697286

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59044649A Granted JPS60191097A (ja) 1984-03-08 1984-03-08 人工ダイヤモンドの析出生成方法

Country Status (1)

Country Link
JP (1) JPS60191097A (cs)

Families Citing this family (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61158899A (ja) * 1985-07-31 1986-07-18 Kyocera Corp ダイヤモンド膜の製法
WO1987003307A1 (en) * 1985-11-25 1987-06-04 Showa Denko Kabushiki Kaisha Process for synthesizing diamond
US5275798A (en) * 1986-07-11 1994-01-04 Kyocera Corporation Method for producing diamond films
JPH0768078B2 (ja) * 1986-07-11 1995-07-26 京セラ株式会社 ダイヤモンド膜の製造方法
JPH0768079B2 (ja) * 1986-07-11 1995-07-26 京セラ株式会社 ダイヤモンド膜の製造方法
US5225275A (en) * 1986-07-11 1993-07-06 Kyocera Corporation Method of producing diamond films
JPS63107898A (ja) * 1986-10-23 1988-05-12 Natl Inst For Res In Inorg Mater プラズマを用いるダイヤモンドの合成法
JPH0776147B2 (ja) * 1986-12-27 1995-08-16 京セラ株式会社 ダイヤモンド膜の製造方法
JPH0811719B2 (ja) * 1986-12-27 1996-02-07 京セラ株式会社 ダイヤモンド膜の製造方法
US5270029A (en) * 1987-02-24 1993-12-14 Semiconductor Energy Laboratory Co., Ltd. Carbon substance and its manufacturing method
US5284709A (en) * 1987-03-30 1994-02-08 Crystallume Diamond materials with enhanced heat conductivity
US5271971A (en) * 1987-03-30 1993-12-21 Crystallume Microwave plasma CVD method for coating a substrate with high thermal-conductivity diamond material
US5270114A (en) * 1987-03-30 1993-12-14 Crystallume High thermal conductivity diamond/non-diamond composite materials
US5273825A (en) * 1987-03-30 1993-12-28 Crystallume Article comprising regions of high thermal conductivity diamond on substrates
US5413772A (en) * 1987-03-30 1995-05-09 Crystallume Diamond film and solid particle composite structure and methods for fabricating same
US4859493A (en) * 1987-03-31 1989-08-22 Lemelson Jerome H Methods of forming synthetic diamond coatings on particles using microwaves
EP0288065B1 (en) * 1987-04-22 1993-10-06 Idemitsu Petrochemical Co. Ltd. Method for synthesis of diamond
JPS6461396A (en) * 1987-09-01 1989-03-08 Idemitsu Petrochemical Co Synthesis of diamond and installation therefor
JPH01130520A (ja) * 1987-11-17 1989-05-23 Idemitsu Petrochem Co Ltd ダイヤモンド半導体の合成方法
US6224952B1 (en) 1988-03-07 2001-05-01 Semiconductor Energy Laboratory Co., Ltd. Electrostatic-erasing abrasion-proof coating and method for forming the same
US5190824A (en) 1988-03-07 1993-03-02 Semiconductor Energy Laboratory Co., Ltd. Electrostatic-erasing abrasion-proof coating
JP2730144B2 (ja) * 1989-03-07 1998-03-25 住友電気工業株式会社 単結晶ダイヤモンド層形成法
US5104634A (en) * 1989-04-20 1992-04-14 Hercules Incorporated Process for forming diamond coating using a silent discharge plasma jet process
JPH0780718B2 (ja) * 1989-08-04 1995-08-30 トヨタ自動車株式会社 ダイヤモンドの合成方法および合成装置
US5126206A (en) * 1990-03-20 1992-06-30 Diamonex, Incorporated Diamond-on-a-substrate for electronic applications

Also Published As

Publication number Publication date
JPS60191097A (ja) 1985-09-28

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