JPS6325438B2 - - Google Patents
Info
- Publication number
- JPS6325438B2 JPS6325438B2 JP25059383A JP25059383A JPS6325438B2 JP S6325438 B2 JPS6325438 B2 JP S6325438B2 JP 25059383 A JP25059383 A JP 25059383A JP 25059383 A JP25059383 A JP 25059383A JP S6325438 B2 JPS6325438 B2 JP S6325438B2
- Authority
- JP
- Japan
- Prior art keywords
- vpp
- power supply
- mos transistor
- gate
- channel mos
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 claims description 11
- 238000010586 diagram Methods 0.000 description 6
- 239000000758 substrate Substances 0.000 description 6
- 230000000694 effects Effects 0.000 description 5
- 230000001052 transient effect Effects 0.000 description 5
- 230000007423 decrease Effects 0.000 description 1
- 239000000284 extract Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 230000007257 malfunction Effects 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
Landscapes
- Read Only Memory (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58250593A JPS60140598A (ja) | 1983-12-28 | 1983-12-28 | 半導体回路 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58250593A JPS60140598A (ja) | 1983-12-28 | 1983-12-28 | 半導体回路 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS60140598A JPS60140598A (ja) | 1985-07-25 |
| JPS6325438B2 true JPS6325438B2 (cs) | 1988-05-25 |
Family
ID=17210193
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP58250593A Granted JPS60140598A (ja) | 1983-12-28 | 1983-12-28 | 半導体回路 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS60140598A (cs) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62175999A (ja) * | 1986-01-29 | 1987-08-01 | Toshiba Corp | 不揮発性半導体記憶装置 |
| JPH0728640Y2 (ja) * | 1988-04-07 | 1995-06-28 | 三菱電機株式会社 | 半導体集積回路装置 |
| JP2000048563A (ja) * | 1998-07-30 | 2000-02-18 | Nec Corp | 半導体メモリ |
-
1983
- 1983-12-28 JP JP58250593A patent/JPS60140598A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS60140598A (ja) | 1985-07-25 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP2723278B2 (ja) | ハイキャパシタンス線プログラミング用デコーダ・ドライバ回路 | |
| EP0639000B1 (en) | Flip-flop type amplifier circuit | |
| JP2862744B2 (ja) | 半導体メモリ装置のデータ出力バッファ | |
| KR100272918B1 (ko) | 센스앰프와 그것을 이용한 스택이틱 랜덤 억세스 메모리와 마이크로프로세서 | |
| JPH0323999B2 (cs) | ||
| JPS6325438B2 (cs) | ||
| JP2550684B2 (ja) | 半導体装置 | |
| JP2638046B2 (ja) | I/o線負荷回路 | |
| US5003203A (en) | Adaptive reference voltage generation circuit for PLA sense amplifiers | |
| JPH09245482A (ja) | 論理回路及び半導体記憶装置 | |
| JPH05174592A (ja) | 不揮発性メモリー | |
| JP2833535B2 (ja) | 半導体記憶回路のワード線駆動回路 | |
| JPH0656719B2 (ja) | 半導体記憶装置 | |
| US11362627B1 (en) | Process tracking pulse generator | |
| JPH0318277B2 (cs) | ||
| KR100314646B1 (ko) | 부트스트랩회로 | |
| JP2589515B2 (ja) | 半導体装置 | |
| JPH09171697A (ja) | センスアンプ回路 | |
| JP2710505B2 (ja) | Uvep−rom読み出し回路 | |
| JPH0136200B2 (cs) | ||
| JPH0745074A (ja) | 半導体記憶装置 | |
| JPS6216471B2 (cs) | ||
| KR960006384B1 (ko) | 와이드 전압동작을 위한 풀-다운회로 | |
| JPS62250597A (ja) | 半導体集積回路装置 | |
| KR960005797Y1 (ko) | 반도체장치의 제어회로(control circuit of semiconductor device) |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| EXPY | Cancellation because of completion of term |