JPS6323348A - 半導体装置の製造方法 - Google Patents

半導体装置の製造方法

Info

Publication number
JPS6323348A
JPS6323348A JP61304944A JP30494486A JPS6323348A JP S6323348 A JPS6323348 A JP S6323348A JP 61304944 A JP61304944 A JP 61304944A JP 30494486 A JP30494486 A JP 30494486A JP S6323348 A JPS6323348 A JP S6323348A
Authority
JP
Japan
Prior art keywords
insulating film
mode
forming
wiring
transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP61304944A
Other languages
English (en)
Japanese (ja)
Other versions
JPH035066B2 (enrdf_load_stackoverflow
Inventor
Kazunari Shirai
白井 一成
Takehide Shirato
猛英 白土
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP61304944A priority Critical patent/JPS6323348A/ja
Publication of JPS6323348A publication Critical patent/JPS6323348A/ja
Publication of JPH035066B2 publication Critical patent/JPH035066B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01Manufacture or treatment
    • H10D84/0123Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0165Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs the components including complementary IGFETs, e.g. CMOS devices
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01Manufacture or treatment
    • H10D84/02Manufacture or treatment characterised by using material-based technologies
    • H10D84/03Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
JP61304944A 1986-12-18 1986-12-18 半導体装置の製造方法 Granted JPS6323348A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP61304944A JPS6323348A (ja) 1986-12-18 1986-12-18 半導体装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP61304944A JPS6323348A (ja) 1986-12-18 1986-12-18 半導体装置の製造方法

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP15835478A Division JPS5583265A (en) 1978-12-19 1978-12-19 Semiconductor device and method of fabricating the same

Publications (2)

Publication Number Publication Date
JPS6323348A true JPS6323348A (ja) 1988-01-30
JPH035066B2 JPH035066B2 (enrdf_load_stackoverflow) 1991-01-24

Family

ID=17939196

Family Applications (1)

Application Number Title Priority Date Filing Date
JP61304944A Granted JPS6323348A (ja) 1986-12-18 1986-12-18 半導体装置の製造方法

Country Status (1)

Country Link
JP (1) JPS6323348A (enrdf_load_stackoverflow)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01270341A (ja) * 1988-04-22 1989-10-27 Fujitsu Ltd 半導体装置の製造方法
US5962907A (en) * 1997-05-08 1999-10-05 Mitsubishi Denki Kabushiki Kaisha Semiconductor device and method of manufacturing the same

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS494990A (enrdf_load_stackoverflow) * 1972-04-26 1974-01-17
JPS4931286A (enrdf_load_stackoverflow) * 1972-02-26 1974-03-20
JPS5118483A (en) * 1974-08-06 1976-02-14 Matsushita Electric Ind Co Ltd Zetsuengeeto fet shusekikairo
JPS5583265A (en) * 1978-12-19 1980-06-23 Fujitsu Ltd Semiconductor device and method of fabricating the same

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4931286A (enrdf_load_stackoverflow) * 1972-02-26 1974-03-20
JPS494990A (enrdf_load_stackoverflow) * 1972-04-26 1974-01-17
JPS5118483A (en) * 1974-08-06 1976-02-14 Matsushita Electric Ind Co Ltd Zetsuengeeto fet shusekikairo
JPS5583265A (en) * 1978-12-19 1980-06-23 Fujitsu Ltd Semiconductor device and method of fabricating the same

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01270341A (ja) * 1988-04-22 1989-10-27 Fujitsu Ltd 半導体装置の製造方法
US5962907A (en) * 1997-05-08 1999-10-05 Mitsubishi Denki Kabushiki Kaisha Semiconductor device and method of manufacturing the same
US6162674A (en) * 1997-05-08 2000-12-19 Mitsubishi Denki Kabushiki Kaisha Method of manufacturing semiconductor device

Also Published As

Publication number Publication date
JPH035066B2 (enrdf_load_stackoverflow) 1991-01-24

Similar Documents

Publication Publication Date Title
US6261882B1 (en) Method for fabricating a semiconductor device
JPS60123055A (ja) 半導体装置及びその製造方法
JPS6323348A (ja) 半導体装置の製造方法
JPS59224165A (ja) 半導体装置
JP2827246B2 (ja) 半導体装置の製造方法
JPS597231B2 (ja) 絶縁ゲイト型電界効果半導体装置の作製方法
JPH07153847A (ja) 半導体装置の製造方法
JP2943218B2 (ja) BiCMOS集積回路装置
JPS63299280A (ja) 半導体装置及びその製造方法
JPH0480945A (ja) 半導体装置の製造方法
JPH02151064A (ja) 半導体装置の製造方法
US6043546A (en) Planar channel-type MOS transistor
JP2617217B2 (ja) 半導体装置の製造方法
JPH03283565A (ja) Mos型半導体集積回路装置
JPS61220454A (ja) 半導体集積回路装置の製造方法
JPH09246541A (ja) 半導体装置の製造方法
JPS63127552A (ja) 半導体装置
JPS5999759A (ja) 集積回路装置の製造方法
JPH02170436A (ja) 半導体装置の製造方法
JPH0453272A (ja) 半導体装置
JPH06140634A (ja) 半導体集積回路装置の製造方法
JPH04348078A (ja) Mos型半導体装置
JPH0319709B2 (enrdf_load_stackoverflow)
JPH02194653A (ja) Mis形トランジスタ
JPS63293858A (ja) 半導体装置の製造方法