JPS6323348A - 半導体装置の製造方法 - Google Patents
半導体装置の製造方法Info
- Publication number
- JPS6323348A JPS6323348A JP61304944A JP30494486A JPS6323348A JP S6323348 A JPS6323348 A JP S6323348A JP 61304944 A JP61304944 A JP 61304944A JP 30494486 A JP30494486 A JP 30494486A JP S6323348 A JPS6323348 A JP S6323348A
- Authority
- JP
- Japan
- Prior art keywords
- insulating film
- mode
- forming
- wiring
- transistor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/01—Manufacture or treatment
- H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
- H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
- H10D84/0165—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs the components including complementary IGFETs, e.g. CMOS devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/01—Manufacture or treatment
- H10D84/02—Manufacture or treatment characterised by using material-based technologies
- H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
- H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
Landscapes
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61304944A JPS6323348A (ja) | 1986-12-18 | 1986-12-18 | 半導体装置の製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61304944A JPS6323348A (ja) | 1986-12-18 | 1986-12-18 | 半導体装置の製造方法 |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP15835478A Division JPS5583265A (en) | 1978-12-19 | 1978-12-19 | Semiconductor device and method of fabricating the same |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6323348A true JPS6323348A (ja) | 1988-01-30 |
| JPH035066B2 JPH035066B2 (enrdf_load_stackoverflow) | 1991-01-24 |
Family
ID=17939196
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP61304944A Granted JPS6323348A (ja) | 1986-12-18 | 1986-12-18 | 半導体装置の製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6323348A (enrdf_load_stackoverflow) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01270341A (ja) * | 1988-04-22 | 1989-10-27 | Fujitsu Ltd | 半導体装置の製造方法 |
| US5962907A (en) * | 1997-05-08 | 1999-10-05 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor device and method of manufacturing the same |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS494990A (enrdf_load_stackoverflow) * | 1972-04-26 | 1974-01-17 | ||
| JPS4931286A (enrdf_load_stackoverflow) * | 1972-02-26 | 1974-03-20 | ||
| JPS5118483A (en) * | 1974-08-06 | 1976-02-14 | Matsushita Electric Industrial Co Ltd | Zetsuengeeto fet shusekikairo |
| JPS5583265A (en) * | 1978-12-19 | 1980-06-23 | Fujitsu Ltd | Semiconductor device and method of fabricating the same |
-
1986
- 1986-12-18 JP JP61304944A patent/JPS6323348A/ja active Granted
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4931286A (enrdf_load_stackoverflow) * | 1972-02-26 | 1974-03-20 | ||
| JPS494990A (enrdf_load_stackoverflow) * | 1972-04-26 | 1974-01-17 | ||
| JPS5118483A (en) * | 1974-08-06 | 1976-02-14 | Matsushita Electric Industrial Co Ltd | Zetsuengeeto fet shusekikairo |
| JPS5583265A (en) * | 1978-12-19 | 1980-06-23 | Fujitsu Ltd | Semiconductor device and method of fabricating the same |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01270341A (ja) * | 1988-04-22 | 1989-10-27 | Fujitsu Ltd | 半導体装置の製造方法 |
| US5962907A (en) * | 1997-05-08 | 1999-10-05 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor device and method of manufacturing the same |
| US6162674A (en) * | 1997-05-08 | 2000-12-19 | Mitsubishi Denki Kabushiki Kaisha | Method of manufacturing semiconductor device |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH035066B2 (enrdf_load_stackoverflow) | 1991-01-24 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US6261882B1 (en) | Method for fabricating a semiconductor device | |
| JPS60123055A (ja) | 半導体装置及びその製造方法 | |
| JPS60160169A (ja) | Mosトランジスタおよびその製造方法 | |
| JPS6323348A (ja) | 半導体装置の製造方法 | |
| JPS59224165A (ja) | 半導体装置 | |
| JP2827246B2 (ja) | 半導体装置の製造方法 | |
| JPS597231B2 (ja) | 絶縁ゲイト型電界効果半導体装置の作製方法 | |
| JP2943218B2 (ja) | BiCMOS集積回路装置 | |
| JPS63299280A (ja) | 半導体装置及びその製造方法 | |
| JPH0480945A (ja) | 半導体装置の製造方法 | |
| US6043546A (en) | Planar channel-type MOS transistor | |
| JPH03283565A (ja) | Mos型半導体集積回路装置 | |
| JP2617217B2 (ja) | 半導体装置の製造方法 | |
| JPH02151064A (ja) | 半導体装置の製造方法 | |
| JPS61220454A (ja) | 半導体集積回路装置の製造方法 | |
| JPH09246541A (ja) | 半導体装置の製造方法 | |
| JPS63252461A (ja) | Cmos型半導体装置の製造方法 | |
| JP2940954B2 (ja) | 半導体装置の製造方法 | |
| JPS5999759A (ja) | 集積回路装置の製造方法 | |
| JPH02170436A (ja) | 半導体装置の製造方法 | |
| JPH0453272A (ja) | 半導体装置 | |
| JPH06140634A (ja) | 半導体集積回路装置の製造方法 | |
| JPH04348078A (ja) | Mos型半導体装置 | |
| JPS606110B2 (ja) | 半導体装置の作製方法 | |
| JPH0319709B2 (enrdf_load_stackoverflow) |