JPS6323348A - 半導体装置の製造方法 - Google Patents
半導体装置の製造方法Info
- Publication number
- JPS6323348A JPS6323348A JP61304944A JP30494486A JPS6323348A JP S6323348 A JPS6323348 A JP S6323348A JP 61304944 A JP61304944 A JP 61304944A JP 30494486 A JP30494486 A JP 30494486A JP S6323348 A JPS6323348 A JP S6323348A
- Authority
- JP
- Japan
- Prior art keywords
- insulating film
- mode
- forming
- wiring
- transistor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/01—Manufacture or treatment
- H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
- H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
- H10D84/0165—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs the components including complementary IGFETs, e.g. CMOS devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/01—Manufacture or treatment
- H10D84/02—Manufacture or treatment characterised by using material-based technologies
- H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
- H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
Landscapes
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP61304944A JPS6323348A (ja) | 1986-12-18 | 1986-12-18 | 半導体装置の製造方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP61304944A JPS6323348A (ja) | 1986-12-18 | 1986-12-18 | 半導体装置の製造方法 |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP15835478A Division JPS5583265A (en) | 1978-12-19 | 1978-12-19 | Semiconductor device and method of fabricating the same |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS6323348A true JPS6323348A (ja) | 1988-01-30 |
JPH035066B2 JPH035066B2 (enrdf_load_stackoverflow) | 1991-01-24 |
Family
ID=17939196
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP61304944A Granted JPS6323348A (ja) | 1986-12-18 | 1986-12-18 | 半導体装置の製造方法 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6323348A (enrdf_load_stackoverflow) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH01270341A (ja) * | 1988-04-22 | 1989-10-27 | Fujitsu Ltd | 半導体装置の製造方法 |
US5962907A (en) * | 1997-05-08 | 1999-10-05 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor device and method of manufacturing the same |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS494990A (enrdf_load_stackoverflow) * | 1972-04-26 | 1974-01-17 | ||
JPS4931286A (enrdf_load_stackoverflow) * | 1972-02-26 | 1974-03-20 | ||
JPS5118483A (en) * | 1974-08-06 | 1976-02-14 | Matsushita Electric Ind Co Ltd | Zetsuengeeto fet shusekikairo |
JPS5583265A (en) * | 1978-12-19 | 1980-06-23 | Fujitsu Ltd | Semiconductor device and method of fabricating the same |
-
1986
- 1986-12-18 JP JP61304944A patent/JPS6323348A/ja active Granted
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS4931286A (enrdf_load_stackoverflow) * | 1972-02-26 | 1974-03-20 | ||
JPS494990A (enrdf_load_stackoverflow) * | 1972-04-26 | 1974-01-17 | ||
JPS5118483A (en) * | 1974-08-06 | 1976-02-14 | Matsushita Electric Ind Co Ltd | Zetsuengeeto fet shusekikairo |
JPS5583265A (en) * | 1978-12-19 | 1980-06-23 | Fujitsu Ltd | Semiconductor device and method of fabricating the same |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH01270341A (ja) * | 1988-04-22 | 1989-10-27 | Fujitsu Ltd | 半導体装置の製造方法 |
US5962907A (en) * | 1997-05-08 | 1999-10-05 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor device and method of manufacturing the same |
US6162674A (en) * | 1997-05-08 | 2000-12-19 | Mitsubishi Denki Kabushiki Kaisha | Method of manufacturing semiconductor device |
Also Published As
Publication number | Publication date |
---|---|
JPH035066B2 (enrdf_load_stackoverflow) | 1991-01-24 |
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