JPS63210010A - 炭素作製方法 - Google Patents

炭素作製方法

Info

Publication number
JPS63210010A
JPS63210010A JP62041748A JP4174887A JPS63210010A JP S63210010 A JPS63210010 A JP S63210010A JP 62041748 A JP62041748 A JP 62041748A JP 4174887 A JP4174887 A JP 4174887A JP S63210010 A JPS63210010 A JP S63210010A
Authority
JP
Japan
Prior art keywords
nitrogen
carbon
space
plasma
magnetic field
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP62041748A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0471034B2 (enrdf_load_stackoverflow
Inventor
Shunpei Yamazaki
舜平 山崎
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
Original Assignee
Semiconductor Energy Laboratory Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Priority to JP62041748A priority Critical patent/JPS63210010A/ja
Priority to KR1019880001649A priority patent/KR900008505B1/ko
Priority to EP88301364A priority patent/EP0284190B1/en
Priority to DE8888301364T priority patent/DE3876120T2/de
Priority to US07/159,610 priority patent/US4869923A/en
Priority to CN88101061A priority patent/CN1036078C/zh
Publication of JPS63210010A publication Critical patent/JPS63210010A/ja
Priority to US07/329,877 priority patent/US5015494A/en
Priority to US07/329,879 priority patent/US4973494A/en
Priority to US07/380,328 priority patent/US5238705A/en
Priority to US07/790,068 priority patent/US5270029A/en
Publication of JPH0471034B2 publication Critical patent/JPH0471034B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Chemical Vapour Deposition (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Carbon And Carbon Compounds (AREA)
JP62041748A 1987-02-24 1987-02-24 炭素作製方法 Granted JPS63210010A (ja)

Priority Applications (10)

Application Number Priority Date Filing Date Title
JP62041748A JPS63210010A (ja) 1987-02-24 1987-02-24 炭素作製方法
KR1019880001649A KR900008505B1 (ko) 1987-02-24 1988-02-15 탄소 석출을 위한 마이크로파 강화 cvd 방법
EP88301364A EP0284190B1 (en) 1987-02-24 1988-02-18 Enhanced cvd method for deposition of carbon
DE8888301364T DE3876120T2 (de) 1987-02-24 1988-02-18 Chemisches gasphasenabscheidungsverfahren zur herstellung einer kohlenstoffschicht.
CN88101061A CN1036078C (zh) 1987-02-24 1988-02-24 淀积碳的微波增强化学气相淀积方法
US07/159,610 US4869923A (en) 1987-02-24 1988-02-24 Microwave enhanced CVD method for depositing carbon
US07/329,877 US5015494A (en) 1987-02-24 1989-03-28 Microwave enhanced CVD method for depositing diamond
US07/329,879 US4973494A (en) 1987-02-24 1989-03-29 Microwave enhanced CVD method for depositing a boron nitride and carbon
US07/380,328 US5238705A (en) 1987-02-24 1989-07-17 Carbonaceous protective films and method of depositing the same
US07/790,068 US5270029A (en) 1987-02-24 1991-11-12 Carbon substance and its manufacturing method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62041748A JPS63210010A (ja) 1987-02-24 1987-02-24 炭素作製方法

Publications (2)

Publication Number Publication Date
JPS63210010A true JPS63210010A (ja) 1988-08-31
JPH0471034B2 JPH0471034B2 (enrdf_load_stackoverflow) 1992-11-12

Family

ID=12617044

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62041748A Granted JPS63210010A (ja) 1987-02-24 1987-02-24 炭素作製方法

Country Status (1)

Country Link
JP (1) JPS63210010A (enrdf_load_stackoverflow)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02217471A (ja) * 1989-02-16 1990-08-30 Semiconductor Energy Lab Co Ltd 炭素系被膜の作製方法
JPH03274269A (ja) * 1990-03-22 1991-12-05 Matsushita Electric Ind Co Ltd ダイヤモンド状薄膜の合成方法及びダイヤモンド状薄膜
JPH07172988A (ja) * 1992-06-11 1995-07-11 General Electric Co <Ge> 平滑な表面をもつｃｖｄダイヤモンド薄膜およびその製法
US6652969B1 (en) 1999-06-18 2003-11-25 Nissin Electric Co., Ltd Carbon film method for formation thereof and article covered with carbon film and method for preparation thereof
US6660342B1 (en) 1990-09-25 2003-12-09 Semiconductor Energy Laboratory Co., Ltd. Pulsed electromagnetic energy method for forming a film
JP2006250767A (ja) * 2005-03-11 2006-09-21 National Institute For Materials Science ダイヤモンド膜、その製造方法、電気化学素子、及びその製造方法

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02217471A (ja) * 1989-02-16 1990-08-30 Semiconductor Energy Lab Co Ltd 炭素系被膜の作製方法
JPH03274269A (ja) * 1990-03-22 1991-12-05 Matsushita Electric Ind Co Ltd ダイヤモンド状薄膜の合成方法及びダイヤモンド状薄膜
US6660342B1 (en) 1990-09-25 2003-12-09 Semiconductor Energy Laboratory Co., Ltd. Pulsed electromagnetic energy method for forming a film
US7125588B2 (en) 1990-09-25 2006-10-24 Semiconductor Energy Laboratory Co., Ltd. Pulsed plasma CVD method for forming a film
JPH07172988A (ja) * 1992-06-11 1995-07-11 General Electric Co <Ge> 平滑な表面をもつｃｖｄダイヤモンド薄膜およびその製法
US5523121A (en) * 1992-06-11 1996-06-04 General Electric Company Smooth surface CVD diamond films and method for producing same
US6652969B1 (en) 1999-06-18 2003-11-25 Nissin Electric Co., Ltd Carbon film method for formation thereof and article covered with carbon film and method for preparation thereof
JP2006250767A (ja) * 2005-03-11 2006-09-21 National Institute For Materials Science ダイヤモンド膜、その製造方法、電気化学素子、及びその製造方法

Also Published As

Publication number Publication date
JPH0471034B2 (enrdf_load_stackoverflow) 1992-11-12

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