JPS63164265U - - Google Patents

Info

Publication number
JPS63164265U
JPS63164265U JP5728787U JP5728787U JPS63164265U JP S63164265 U JPS63164265 U JP S63164265U JP 5728787 U JP5728787 U JP 5728787U JP 5728787 U JP5728787 U JP 5728787U JP S63164265 U JPS63164265 U JP S63164265U
Authority
JP
Japan
Prior art keywords
multilayer structure
structure layer
semiconductor laser
cleavage surfaces
electrodes
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP5728787U
Other languages
English (en)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP5728787U priority Critical patent/JPS63164265U/ja
Publication of JPS63164265U publication Critical patent/JPS63164265U/ja
Pending legal-status Critical Current

Links

Description

【図面の簡単な説明】
第1図は本考案の半導体レーザチツプの斜視図
、第2図及び第3図はその製造工程を説明する斜
視図である。 1,2……電極、3……多層構造層、4……ガ
リウム・アルミニウムひ素層、5……発光部、6
,7……へき解面。

Claims (1)

  1. 【実用新案登録請求の範囲】 2つの電極と、2つの該電極の間に形成された
    所定材料よりなる多層構造層と、該多層構造層の
    レーザ光を出力する2つの第1のへき解面と、該
    多層構造層の該レーザ光を出力しない2つの第2
    のへき解面とを備える半導体レーザチツプを所定
    の基板上に固定した半導体レーザ装置において、 2つの該第1のへき解面と2つの該第2のへき
    解面はいずれも所定の材料により表面処理が施さ
    れるとともに、外気に直接触れていることを特徴
    とする半導体レーザ装置。
JP5728787U 1987-04-15 1987-04-15 Pending JPS63164265U (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5728787U JPS63164265U (ja) 1987-04-15 1987-04-15

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5728787U JPS63164265U (ja) 1987-04-15 1987-04-15

Publications (1)

Publication Number Publication Date
JPS63164265U true JPS63164265U (ja) 1988-10-26

Family

ID=30886860

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5728787U Pending JPS63164265U (ja) 1987-04-15 1987-04-15

Country Status (1)

Country Link
JP (1) JPS63164265U (ja)

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51120690A (en) * 1975-04-16 1976-10-22 Hitachi Ltd Manufacturing method for semiconductor apparatus
JPS5635316A (en) * 1979-08-29 1981-04-08 Kurata Denshi Kk Method of manufacturing electric contacts
JPS59211292A (ja) * 1983-05-16 1984-11-30 Matsushita Electric Ind Co Ltd 半導体レ−ザ装置

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51120690A (en) * 1975-04-16 1976-10-22 Hitachi Ltd Manufacturing method for semiconductor apparatus
JPS5635316A (en) * 1979-08-29 1981-04-08 Kurata Denshi Kk Method of manufacturing electric contacts
JPS59211292A (ja) * 1983-05-16 1984-11-30 Matsushita Electric Ind Co Ltd 半導体レ−ザ装置

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